EP0787836A3 - Verfahren zur Herstellung einer Siliziumschmelze von einem polykristallinen Siliziumchargiergut - Google Patents

Verfahren zur Herstellung einer Siliziumschmelze von einem polykristallinen Siliziumchargiergut Download PDF

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Publication number
EP0787836A3
EP0787836A3 EP96308146A EP96308146A EP0787836A3 EP 0787836 A3 EP0787836 A3 EP 0787836A3 EP 96308146 A EP96308146 A EP 96308146A EP 96308146 A EP96308146 A EP 96308146A EP 0787836 A3 EP0787836 A3 EP 0787836A3
Authority
EP
European Patent Office
Prior art keywords
polycrystalline silicon
granular
silicon
chunk
crucible
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP96308146A
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English (en)
French (fr)
Other versions
EP0787836A2 (de
EP0787836B1 (de
Inventor
Kyong-Min Kim
Leon A. Allen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SunEdison Inc
Original Assignee
SunEdison Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SunEdison Inc filed Critical SunEdison Inc
Publication of EP0787836A2 publication Critical patent/EP0787836A2/de
Publication of EP0787836A3 publication Critical patent/EP0787836A3/de
Application granted granted Critical
Publication of EP0787836B1 publication Critical patent/EP0787836B1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
EP96308146A 1996-02-01 1996-11-12 Verfahren zur Herstellung einer Siliziumschmelze von einem polykristallinen Siliziumchargiergut Expired - Lifetime EP0787836B1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/595,075 US5814148A (en) 1996-02-01 1996-02-01 Method for preparing molten silicon melt from polycrystalline silicon charge
US595075 1996-02-01

Publications (3)

Publication Number Publication Date
EP0787836A2 EP0787836A2 (de) 1997-08-06
EP0787836A3 true EP0787836A3 (de) 1998-04-01
EP0787836B1 EP0787836B1 (de) 2001-01-17

Family

ID=24381626

Family Applications (1)

Application Number Title Priority Date Filing Date
EP96308146A Expired - Lifetime EP0787836B1 (de) 1996-02-01 1996-11-12 Verfahren zur Herstellung einer Siliziumschmelze von einem polykristallinen Siliziumchargiergut

Country Status (8)

Country Link
US (1) US5814148A (de)
EP (1) EP0787836B1 (de)
JP (1) JPH09328391A (de)
KR (1) KR970062081A (de)
CN (1) CN1157342A (de)
DE (1) DE69611597T2 (de)
MY (1) MY112066A (de)
SG (1) SG76498A1 (de)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0856599A3 (de) * 1997-01-31 2000-03-22 Komatsu Electronic Metals Co., Ltd Vorrichtung zur Zuführung von Rohmaterial in einen Quarztiegel und ein Verfahren zur Zuführung des Rohmaterials
JP3189764B2 (ja) * 1997-09-29 2001-07-16 住友金属工業株式会社 シリコン単結晶原料の溶解方法
US5919303A (en) * 1997-10-16 1999-07-06 Memc Electronic Materials, Inc. Process for preparing a silicon melt from a polysilicon charge
US6589332B1 (en) 1998-11-03 2003-07-08 Memc Electronic Materials, Inc. Method and system for measuring polycrystalline chunk size and distribution in the charge of a Czochralski process
US6284040B1 (en) 1999-01-13 2001-09-04 Memc Electronic Materials, Inc. Process of stacking and melting polycrystalline silicon for high quality single crystal production
US6344083B1 (en) * 2000-02-14 2002-02-05 Memc Electronic Materials, Inc. Process for producing a silicon melt
US6749683B2 (en) 2000-02-14 2004-06-15 Memc Electronic Materials, Inc. Process for producing a silicon melt
US8021483B2 (en) * 2002-02-20 2011-09-20 Hemlock Semiconductor Corporation Flowable chips and methods for the preparation and use of same, and apparatus for use in the methods
US7141114B2 (en) * 2004-06-30 2006-11-28 Rec Silicon Inc Process for producing a crystalline silicon ingot
NO324710B1 (no) * 2004-12-29 2007-12-03 Elkem Solar As Fremgangsmate for fylling av digel med silisium av solcellekvalitet
JP4961753B2 (ja) * 2006-01-20 2012-06-27 株式会社Ｓｕｍｃｏ 単結晶製造管理システム及び方法
JP4753308B2 (ja) * 2006-07-13 2011-08-24 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 半導体ウェーハ素材の溶解方法及び半導体ウェーハの結晶育成方法
CN101148777B (zh) * 2007-07-19 2011-03-23 任丙彦 直拉法生长掺镓硅单晶的方法和装置
US20090120353A1 (en) * 2007-11-13 2009-05-14 Memc Electronic Materials, Inc. Reduction of air pockets in silicon crystals by avoiding the introduction of nearly-insoluble gases into the melt
EP2356268B1 (de) * 2008-11-05 2013-07-31 MEMC Singapore Pte. Ltd. Verfahren zur herstellung einer schmelze von siliciumpulver zum ziehen von siliciumkristallen
WO2010126639A1 (en) * 2009-04-29 2010-11-04 Calisolar, Inc. Process control for umg-si material purification
JP2012140285A (ja) * 2010-12-28 2012-07-26 Siltronic Japan Corp シリコン単結晶インゴットの製造方法
US20120260845A1 (en) 2011-04-14 2012-10-18 Rec Silicon Inc Polysilicon system
CN102953117B (zh) * 2011-08-31 2015-06-10 上海普罗新能源有限公司 硅锭的铸造方法
CN102732945B (zh) * 2012-04-13 2015-11-25 英利能源（中国）有限公司 一种单晶硅铸锭装料方法
WO2014037965A1 (en) * 2012-09-05 2014-03-13 MEMC ELECTRONIC METERIALS S.p.A. Method of loading a charge of polysilicon into a crucible
CN103074681B (zh) * 2013-02-17 2016-03-16 英利集团有限公司 一种二次加料方法
CN107604446A (zh) * 2017-10-25 2018-01-19 宁晋晶兴电子材料有限公司 一种新型的熔融表皮料结构及其熔融方法
DE102019208670A1 (de) * 2019-06-14 2020-12-17 Siltronic Ag Verfahren zur Herstellung von Halbleiterscheiben aus Silizium
CN114086243A (zh) * 2021-11-29 2022-02-25 曲靖晶龙电子材料有限公司 单晶硅棒的制备方法
CN115467013A (zh) * 2022-08-22 2022-12-13 包头美科硅能源有限公司 一种用于拉晶生产中提高颗粒硅投料量的方法
CN115404356B (zh) * 2022-09-22 2024-03-22 同创普润(上海)机电高科技有限公司 一种降低高纯铝熔体中不熔物含量的方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4249988A (en) * 1978-03-15 1981-02-10 Western Electric Company, Inc. Growing crystals from a melt by controlling additions of material thereto
JPH01148779A (ja) * 1987-12-03 1989-06-12 Toshiba Ceramics Co Ltd 結晶成分の供給方法
JPH01286995A (ja) * 1988-05-12 1989-11-17 Toshiba Ceramics Co Ltd シリコン単結晶の製造方法
US4938837A (en) * 1985-10-12 1990-07-03 Sumitomo Electric Industries, Ltd. Crucible recovering method and apparatus therefor
JPH03199189A (ja) * 1989-12-27 1991-08-30 Kawasaki Steel Corp 半導体単結晶の製造方法
JPH05319978A (ja) * 1992-05-22 1993-12-03 Sumitomo Metal Ind Ltd 溶融層法による単結晶引き上げ方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1986006764A1 (en) * 1985-05-17 1986-11-20 J.C. Schumacher Company Continuously pulled single crystal silicon ingots
JPH03193694A (ja) * 1989-12-21 1991-08-23 Sumitomo Metal Ind Ltd 結晶成長装置
DE4106589C2 (de) 1991-03-01 1997-04-24 Wacker Siltronic Halbleitermat Kontinuierliches Nachchargierverfahren mit flüssigem Silicium beim Tiegelziehen nach Czochralski
US5242667A (en) 1991-07-26 1993-09-07 Ferrofluidics Corporation Solid pellet feeder for controlled melt replenishment in continuous crystal growing process
JPH05139886A (ja) * 1991-11-21 1993-06-08 Toshiba Corp 砒素化合物単結晶の製造方法
JP2506525B2 (ja) * 1992-01-30 1996-06-12 信越半導体株式会社 シリコン単結晶の製造方法
JP2531415B2 (ja) * 1992-03-24 1996-09-04 住友金属工業株式会社 結晶成長方法
US5588993A (en) * 1995-07-25 1996-12-31 Memc Electronic Materials, Inc. Method for preparing molten silicon melt from polycrystalline silicon charge

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4249988A (en) * 1978-03-15 1981-02-10 Western Electric Company, Inc. Growing crystals from a melt by controlling additions of material thereto
US4938837A (en) * 1985-10-12 1990-07-03 Sumitomo Electric Industries, Ltd. Crucible recovering method and apparatus therefor
JPH01148779A (ja) * 1987-12-03 1989-06-12 Toshiba Ceramics Co Ltd 結晶成分の供給方法
JPH01286995A (ja) * 1988-05-12 1989-11-17 Toshiba Ceramics Co Ltd シリコン単結晶の製造方法
JPH03199189A (ja) * 1989-12-27 1991-08-30 Kawasaki Steel Corp 半導体単結晶の製造方法
JPH05319978A (ja) * 1992-05-22 1993-12-03 Sumitomo Metal Ind Ltd 溶融層法による単結晶引き上げ方法

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 013, no. 408 (C - 634) 8 September 1989 (1989-09-08) *
PATENT ABSTRACTS OF JAPAN vol. 014, no. 063 (C - 0685) 6 February 1990 (1990-02-06) *
PATENT ABSTRACTS OF JAPAN vol. 015, no. 467 (C - 0888) 27 November 1991 (1991-11-27) *
PATENT ABSTRACTS OF JAPAN vol. 018, no. 140 (C - 1177) 8 March 1994 (1994-03-08) *

Also Published As

Publication number Publication date
US5814148A (en) 1998-09-29
KR970062081A (ko) 1997-09-12
JPH09328391A (ja) 1997-12-22
EP0787836A2 (de) 1997-08-06
MY112066A (en) 2001-03-31
DE69611597D1 (de) 2001-02-22
EP0787836B1 (de) 2001-01-17
DE69611597T2 (de) 2001-05-31
CN1157342A (zh) 1997-08-20
SG76498A1 (en) 2000-11-21

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