EP0743671A2 - Méthode et dispositif pour un appareil de traitement par plasma - Google Patents

Méthode et dispositif pour un appareil de traitement par plasma Download PDF

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Publication number
EP0743671A2
EP0743671A2 EP96303508A EP96303508A EP0743671A2 EP 0743671 A2 EP0743671 A2 EP 0743671A2 EP 96303508 A EP96303508 A EP 96303508A EP 96303508 A EP96303508 A EP 96303508A EP 0743671 A2 EP0743671 A2 EP 0743671A2
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EP
European Patent Office
Prior art keywords
plasma
plasma processing
processing apparatus
microwave
process chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP96303508A
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German (de)
English (en)
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EP0743671A3 (fr
Inventor
Ken Yoshioka
Saburou Kanai
Kaji Tetsunori
Ryoji Nishio
Manabu Edamura
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Hitachi Ltd
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Hitachi Ltd
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Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of EP0743671A2 publication Critical patent/EP0743671A2/fr
Publication of EP0743671A3 publication Critical patent/EP0743671A3/fr
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/32229—Waveguides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H01J37/32678—Electron cyclotron resonance

Definitions

  • the present invention relates to plasma processing methods and apparatus and more particularly to a plasma processing method and apparatus fit for processing a specimen such as a semiconductor substrate (hereinafter called "wafer") by generating a plasma using a microwave and a high-frequency wave in the frequency range of 10 to 100 MHz.
  • the uniformity of plasma density distribution above a wafer surface to be treated is particularly important in securing the uniformity of processing such as etching.
  • a method of radiating a microwave in a ring-like shape from the top surface of a process chamber to generate a ring-shaped plasma so that uniform plasma distribution is obtained on the surface of a wafer as mentioned in, for example, Document A, "The Japan Society of Applied Physics, 1994, Autumn, 19p-ZV-4" or Document B, "The Japan Society of Applied Physics, 1994, Autumn, 19p-ZV-6.”
  • the apparatus may be desired to have a density distribution adjusting means since the plasma density distribution is concave or convex distribution rather than a uniform one.
  • an inductively coupled RF (high frequency) plasma source as representatively disclosed in Japanese Patent Laid-Open No. 79025/1991 is in frequent use recently as a plasma source for CVD and etching.
  • This plasma source has made possible not only a high density (10 11 - 10 12 cm -3 ) but also low-pressure (1 - 10 mTorr) action equivalent to what is offered by a microwave ECR plasma source though it is compact in construction. Even in this system, however, it is still required to provide a definite means for securing the plasma uniformity and to solve a problem arising from the foreign matter produced by wall-surface sputtering, which will be described below, as in the case where a microwave is used.
  • Japanese Patent Laid-Open No. 112161/1994 of the prior art describes an arrangement in which a coaxial waveguide is opened in a tapered shape, which results in rendering a microwave radiating portion large-sized.
  • Japanese Patent Laid-Open No. 79025/1991 has presented problems including causing the inner surface of a vacuum chamber to be scraped down by sputtering due to ion bombardment, thus increasing not only foreign matter but also the frequency of replacing parts in the vacuum chamber; lowering the plasma uniformity as the plasma tends to concentrate at the center of the chamber and so forth.
  • a third problem is concerned with the structure which is hardly able to have a grounding electrode set in parallel and opposite to a specimen since the thick dielectric material has to be employed.
  • the processing tends to lack uniformity in the absence of such a grounding electrode positioned in parallel and opposite to the specimen; that is, in a case where the grounding electrode is positioned on the side wall of the chamber, the length of the high-frequency bias circuit portion allowed to pass through the plasma differs between the center of the wafer and the outer periphery of the wafer.
  • the bias is unevenly applied to the wafer and especially when the wafer has a large diameter (8 ⁇ 12 inches), this problem becomes conspicuous.
  • a fourth problem originates from a variety of bad effects including abnormal discharge resulting from the high input impedance of the induction RF coil which makes the power supply terminal have a high voltage, unstable discharge resulting from sputtering and improper matching as electrostatically coupled components go on increasing, ignitability impediment and so on.
  • An object of the present invention is to provide a plasma processing method and apparatus capable of generating a high-density plasma of an industrially required level by generating a uniform plasma and simultaneously transmitting large electric power through compact, ring-shaped microwave radiation means and of adjusting uniformity on a wafer surface.
  • Another object of the present invention is to provide a plasma processing method and apparatus so configured as to prevent any foreign matter from being produced in a process chamber and capable of adjusting uniformity on a wafer surface; particularly to provide an electromagnetically coupled plasma processing apparatus based on a novel principle according to which the following four problems raised to deal with a high-frequency plasma can be solved simultaneously or partially:
  • the density distribution of the plasma is independently controlled.
  • the density distribution of the plasma is independently controlled by an position adjustment of ECR or a magnetic field gradient.
  • the density distribution of the plasma is controlled on the basis of the kind of material of the specimen.
  • the specimen is uniformly processed by independently controlling a plasma density distribution, a gas distribution and a bias distribution.
  • a plasma processing apparatus comprises a microwave introducing device, a magnetic field coil for generating a static magnetic field, a process chamber for generating a plasma by an introduced microwave, a gas supplying device for supplying a gas to the process chamber, a specimen stage for holding a wafer, and a vacuum evacuating device for evacuating the process chamber, and is characterized in that the microwave introducing device is arranged to transmit a microwave in coaxial TEM mode.
  • a plasma processing apparatus comprises a microwave introducing device, a magnetic field coil for generating a vertical static magnetic field, a process chamber for generating a plasma by an introduced microwave, a gas supplying device for supplying a gas to the process chamber, a specimen stage for holding a wafer, and vacuum evacuating device for evacuating the process chamber, and is characterized in that the microwave introducing device is equipped with a coaxial waveguide converter, a small-diameter waveguide, a discoid parallel-plate waveguide, an enlarged coaxial waveguide and a microwave introducing vacuum window.
  • an outer diameter R 2 of the enlarged coaxial waveguide is smaller than an inner diameter R 5 of the process chamber connected to the microwave vacuum window (R 2 ⁇ R 5 ).
  • a microwave has a frequency between of 500 MHz and 5 GHz.
  • a plurality of microwave sources of different frequencies are used at the same time.
  • variable frequency microwave source is used.
  • a plasma contact portion of the portion other than a portion (R 1 ⁇ R ⁇ R 2 ) equivalent to a microwave radiating part is provided with a grounding conductor plate or a semiconductor plate, such as Si or SiC.
  • a magnetic field coil or a permanent magnet is provided by utilizing a portion other than a portion (R 1 ⁇ R ⁇ R 2 ) equivalent to a microwave radiating part.
  • the discoid parallel-plate waveguide includes two small- and large-diameter ring-shaped opening portions and the enlarged coaxial waveguide is connected to each of the opening portions.
  • the enlarged coaxial waveguides include means for varying microwave power distributed to them.
  • an electromagnetically coupled Rf antenna system in place of an inductively coupled RF coil is employed according to the present invention.
  • the RF antenna comprises a central conductor for letting a high-frequency current flow into a closed space surrounded with a conductor and a slit situated on one side of the closed space facing the plasma, the slit being ingeniously opened so as not to look directly at the plasma on the central conductor.
  • the central conductor and the closed space form a cavity resonator for electromagnetically creating a resonance condition.
  • the antenna system is to be installed not beyond but on this side of a dielectric window constituting a vacuum chamber.
  • a slit conductor is potentially switchable from floating to a grounding potential and vice versa.
  • ECR electron cyclotron resonance
  • the plasma uniformity may be varied.
  • the plasma distribution will concentrate heavier at the center of the wafer if the intensity of the radiation is strengthened on the inner peripheral side of the double ring radiation source and heavier on the outer periphery of the wafer if the intensity is strengthened on the outer peripheral side thereof.
  • the microwave strength distribution diffuses and is then absorbed by the plasma, so that the plasma uniformity above the wafer surface becomes variable.
  • the uniformity can also be changed by changing the static magnetic field strength.
  • the ring-shaped microwave radiating source is installed on an atmospheric side via the vacuum introducing window, the likelihood of the occurrence of foreign matter caused by the radiating source itself is eliminated.
  • the ring radiator Since the ring radiator is employed, it is possible to install a wafer-opposed electrode in the central portion of the radiator.
  • a conventional type of ECR microwave plasma processing apparatus has a structure in which an electrode is difficult to install at a position opposing the wafer, so that a high-frequency bias is difficult to apply uniformly, but the present invention makes it possible to solve this conventional problem.
  • a gas pipe for discharging a processing gas or a member for absorbing the excess radicals contained in a processing plasma for example, a Si plate scavenger for fluorine radicals.
  • the microwave radiating source is installed at a position away from the inner side wall of the plasma processing chamber, a plasma generation position does not directly touch the wall, so that it is possible to keep out foreign matter due to the accumulation of high-degree dissociated radicals or prevent damage to a side wall material.
  • Fig. 2(a) is a diagram illustrative of the principle of the invention.
  • an RF power supply 1 is led via a matching box 2 to a loop antenna body 3.
  • the loop antenna is surrounded by a cavity resonator 4 on all sides and slits 5 are opened in only the side which faces a plasma.
  • two layers of slits 5 are alternately arranged so that they are not overlapped, whereby only the electromagnetic wave components radiated from the antenna can be propagated toward a plasma without making the antenna body 3 look directly at the plasma. A detailed description will further be given of this situation.
  • Figs. 2(b) two layers of slits 5 are alternately arranged so that they are not overlapped, whereby only the electromagnetic wave components radiated from the antenna can be propagated toward a plasma without making the antenna body 3 look directly at the plasma.
  • an alternating current 1 is made to flow through an antenna conductor.
  • a return current 1' passes through the side and back plates of the cavity resonator screwed down with screws on its way back. (No current flows through the slits as any flow channel is not formed therein).
  • An alternating-current magnetic field H is created by the antenna current 1 and the return current 1', and part of the magnetic field leaks out via the slits. Because of the magnetic field that has leaked outside, a ring-shaped electromagnetic field E and other electromagnetic fields (not shown) are successively formed on a plane perpendicular to the magnetic field in accordance with the Maxwell's law of radio-wave propagation and transmitted in the direction of a plasma 6.
  • Another (second) advantage of the closed space structure by means of the cavity resonator is as follows: Even though a metal conductor is installed in a space other than the closed one, the radiation of the radio wave toward the plasma is not essentially affected. When a conductor plate is inadvertently placed close to the prior art induction coil, magnetic flux is blocked off at that place and the problem is that no plasma can be generated in this case.
  • the structure according to the present invention is advantageous in that the opposed grounding electrode is readily installed.
  • Still another (third) advantage of the closed space structure by means of the cavity resonator is that the input impedance of an antenna is reducible.
  • C in this equation represents the capacitance between the central conductor and the inner wall of the cavity resonator, wherein C can be set greater; consequently, the impedance can be set smaller through a structural design. Simultaneously, the value of L can be set smaller and the impedance can also be set smaller as it is feasible to form the central conductor into a flat shape. Since this arrangement is based on a distribution constant system, the terminal impedance can be brought close to pure resistance on condition that the antenna length (effective) and the applied frequency are properly chosen, so that impedance matching is facilitated. According to the closed space structure by means of this cavity resonator, there is a further (fourth) important advantage.
  • Fig. 3(b) shows an improved version of the prior art which is readily presumable wherein a method of winding the Rf coil has been changed in that peripheral winding is adopted so as to generate a ring-shaped plasma.
  • Fig. 3(c) refers to a cavity resonance system according to the present invention.
  • the induced electric field E formed under the electromagnetic induction law is deviated toward the center since the pattern of a magnetic line of force H generated by each induction coil 3 is also deviated toward the center according to the prior art of Fig. 3(a), so that no uniform plasma can be produced.
  • Fig. 3(b) it is readily thought of to supply current to the coils 3 separated from each other but this is still unsatisfactory. Even when the coils are thus separated, the magnetic line of force H that has been formed passes through the center of the chamber, whereby a strong induced electric field E is still formed in the vicinity of the center.
  • the magnetic line of force formed as shown in Fig. 3(c) has a different pattern.
  • the cavity resonance system according to the present invention makes it possible for the first time to generate a ring-shaped plasma and irradiate a specimen uniformity with the plasma.
  • Fig. 1 is an explanatory view of a first embodiment of the present invention.
  • Fig. 2 is a diagram showing the principle of the present invention.
  • Fig. 3 is a diagram showing the principle of the present invention.
  • Fig.4 is an explanatory view showing plasma test results according to the present invention.
  • Fig. 5 is an explanatory view showing the dimensional relationship of the present invention.
  • Fig. 6 is an explanatory view showing a second embodiment (1) of the present invention.
  • Fig. 7 is an explanatory view showing a second embodiment (2) of the present invention.
  • Fig. 8 is an explanatory view showing a second embodiment (3) of the present invention.
  • Fig. 9 is an explanatory view showing a third embodiment of the present invention.
  • Fig. 10 is an explanatory view showing a fourth embodiment of the present invention.
  • Fig. 11 is an explanatory view showing a fifth embodiment of the present invention.
  • Fig. 12 is an explanatory view showing a sixth embodiment of the present invention.
  • Fig. 13 is an explanatory view showing a seventh embodiment of the present invention.
  • Fig. 14 is an explanatory view showing an eighth embodiment of the present invention.
  • Fig. 15 is an explanatory view showing a seventh embodiment of the present invention.
  • Fig. 16 is an explanatory view showing a tenth embodiment of the present invention.
  • Fig. 1 is a partial front elevational view showing in longitudinal section a plasma processing apparatus according to one embodiment of the present invention.
  • a microwave is sent through a waveguide A1 and transfers to a coaxial TEM mode in a coaxial waveguide converter A2 before being conducted through a small-diameter coaxial tube A3.
  • the microwave leaves the coaxial tube A3 and transfers to a parallel disk waveguide A4.
  • the microwave transfers to a large-diameter coaxial tube portion A5 and enters a process chamber A6.
  • the process chamber is surrounded by electromagnetic coils A7 for generating static magnetic fields, thus forming an ECR plane A3.
  • a plasma generating portion A9 assumes a ring shape corresponding to this ECR plane and the plasma is uniformized above a wafer installation electrode A10.
  • reference numeral All denotes a vacuum introducing window which is made of quartz or the like.
  • Fig. 4 ((a), (b)) shows the result obtained by examining the condition in which a plasma is generated under this system.
  • Fig. 4 ((a), (b)) refers to the consequence of two-dimensional distribution measurement on a saturated ion current density (equivalent to a plasma density directly above the wafer) at a position above the electrode (in Fig. 4(a), the ECR plane: 79 mm above the wafer; and in Fig.
  • the current density thus obtained is as high as 10 mA/cm 2 or above in the case of a C 4 F 8 plasma and reaches the equivalent level required.
  • the input microwave power was 1 - 2 kW and the waveguide was not overheated, for example.
  • a small-diameter coaxial tube characteristic impedance Z 0 50 ⁇ , a parallel disk impedance Z 1 (R) and an enlarged coaxial portion impedance Z 2 need conforming to each other so that the reflection of a microwave is prevented from occurring at each junction.
  • Fig. 6 shows a second embodiment of the present invention. It is desirable that plasma uniformity is made adjustable over the range of perfect uniformity to convex and concave uniformity. This means that the etching uniformity of a specimen to be processed is made controllable by the uniformity of processing gas and a high-frequency bias other than the plasma uniformity and that the plasma uniformity is set adjustable so as to cover the influence of any other uniformity determining factor to ensure that final etching uniformity is secured.
  • Fig. 4 shows an arrangement in which a ring radiation part is provided double so that a microwave is emitted from each of the inner and outer peripheral rings.
  • a disk component A41 may be replaced.
  • b may be changed by operating a screw mechanism A42 from above as shown in Fig. 7 or a ceiling member A43 for the parallel disk may be set variable by means of a plunger mechanism as shown in Fig. 8.
  • the system of Fig. 6 makes it necessary to replace the parts each time the uniformity is changed.
  • the waveguide is simpler and more reliable than those shown in Figs. 7 and 8.
  • the efficiency of adjusting the uniformity is conversely improved in the examples shown in Figs. 7 and 8, the movable parts taken in the waveguide raises a reliability problem at the time large power is passed therethrough.
  • Fig. 9 shows a third embodiment of the present invention, wherein an electrically conductive structure (Al or the like) is introduced on the bottom side of the parallel disk facing the process chamber A to form an opposed electrode 13 with respect to the wafer.
  • This arrangement is intended to improve the uniformity of high-frequency bias.
  • the use of Si or SiC for a member at this position allows the excess fluorine contained in the plasma to be absorbed, so that underlying layer (Si) selectivity in an SiO 2 etching process is made improvable thereby.
  • a processing gas blowing mechanism A14 using this space is provided according to the present invention in anticipation of processing gas uniformity by utilizing a processing gas flow A15 from the central portion toward the peripheral portion.
  • a magnet (coil or permanent magnet) or a magnetic body A16 can be installed in this space and a magnetic-line-of-force structure A17 is also disposed as shown in Fig. 9, whereby the plasma uniformity can be increased.
  • Fig. 10 is an explanatory view of a fifth embodiment of the present invention.
  • a process chamber 10 comprises a cylindrical side wall 11, a quartz ceiling panel 12 and a specimen-holding stage 13.
  • Ring-shaped antenna modules 9 are placed on the surface of the quartz ceiling panel 12.
  • the antenna module 9 includes a loop antenna 3, a cavity resonator 4, a slit 5 and the like.
  • the radio wave 14 emitted from the cavity resonator 4 is radiated as shown by an arrow of Fig. 10, thus causing a plasma 6 to be generated.
  • the plasma diffuses, it becomes a uniform plasma over the whole surface of a specimen when it reaches the specimen-holding stage 13.
  • Fig. 10(b) is a bottom plan view taken from under the antenna module 9, wherein part of a double-layer slit 5 is removed to make the antenna body 3 visible.
  • Fig. 11 is an explanatory view of a sixth embodiment of the present invention.
  • the distance between an antenna module and a plasma it is preferred for the distance between an antenna module and a plasma to be shorter in the case of an electrode-coupled plasma in view of ignitability of the plasma.
  • the electrostatically coupled component simultaneously increases, which also poses a problem of abnormal ion acceleration, and consequently the antenna could not be placed near the plasma.
  • the antenna can be set sufficiently close to the plasma and the ignitability can thus be increased.
  • the cavity resonator 4 is also used as a vacuum boundary and coupled to the process chamber body 12 with an O-ring 15.
  • a cover 16 (made of quartz, alumina ceramics or sapphire) is fitted to the front of the antenna module lest the plasma is directly exposed to heavy metal.
  • an exhaust port 17 is provided separately and by means of differential exhausting, the cavity resonator is kept under extreme vacuum to prevent discharging therein.
  • a high frequency 19 of a system different from what is intended for generating a plasma is applied to the specimen-holding stage to apply self-bias to the specimen so as to draw ions in the plasma onto the surface of a specimen perpendicularly for the purpose of improving specimen processing accuracy and a processing rate.
  • the distance between a high-frequency circuit and the center of the specimen via the plasma differs from the distance between the circuit and the end portion of the specimen because a conductor to be used as the opposed grounding electrode of the circuit of the second high frequency 19 forms the inner side wall 12 of the process chamber; consequently, uniformity in processing has been unachievable because the impedance remains unequal.
  • a grounding parallel, flat plate-like electrode it is preferred for a grounding parallel, flat plate-like electrode to be placed opposite to the specimen.
  • such an electrode could not be placed in the way stated above in the prior art because the inductively coupled high-frequency plasma intercepted the induced magnetic flux.
  • the antenna module and the metal ceiling panel 18 of the inner wall of the antenna module face the plasma via the sufficiently thin cover 16 and capable of functioning as an opposed grounding electrode set in parallel to the whole surface of the specimen, so that processing uniformity is improved.
  • the impedance of a capacitive capacitor element will be sufficiently low if the cover 16 is thin.
  • the conductor 18 can be made to function as a grounding electrode.
  • a cover of quartz not greater than 3 mm thick may be satisfactory).
  • Fig. 12 shows a seventh embodiment of the present invention.
  • an insulating spacer 20 formed of quartz, alumina ceramics or the like is inserted between the antenna body 3 and an antenna exit 5.
  • This spacer is hermetically fitted with respect to the cavity resonator 4 or sealed under vacuum by means of an O-ring. Consequently, the differential exhausting described in reference to Fig. 3 according to one embodiment of the present invention can be dispersed with and the structure is simplified.
  • the antenna which brings about another secondary effect constitutes the constant circuit of distribution and this makes it desirable to lower the impedance of the line in view of increasing the current and lowering the voltage because coupling with a plasma is improved by increasing the current and because the abnormal discharged around the antenna is impeded by lowering the voltage.
  • C Since C is determined by the capacitance between the antenna body 3 and the slit conductor 5, C can be increased and therefore Z can be decreased by setting the antenna body 3 closer to the slit conductor 5 to the extent that discharge breakdown is not caused and increasing the dielectric constant between the antenna body 3 and the slit conductor 5; a dielectric spacer 20 made of quartz, alumina or the like may preferably be inserted between the antenna body 3 and the slit conductor 5 for the purpose.
  • Fig. 13 shows an eighth embodiment of the present invention.
  • the slit portion 5 of the cavity resonator 4 is replaced with two sheets of cover glass 16a, 16b and Al or Au vapor deposition 16c is utilized for forming a slit pattern on each sheet of cover glass.
  • the slit conductors in Figs. 11, 12 can be disused with the effect of not only simplifying the complicated structure shown in Figs. 11, 12 but also improving reliability.
  • Fig. 14 shows a ninth embodiment of the present invention.
  • the antenna module 9 is mounted on a dome-shaped quartz bell-jar 21.
  • the reason for the use of the dome-shaped bell-jar is that the thickness of such a bell-jar can be reduced in view of structural strength.
  • the adoption of such a thin-walled bell-jar results in improving the ignitability of a plasma inasmuch as the coupling of the plasma with the antenna module is enhanced.
  • two antenna modules 9 are arranged in the form of a concentric circle and respectively connected to high-frequency sources of different systems.
  • the levels of currents flowing into antennas 92, 96 and the relative phases are controlled by the high-frequency sources 191, 192 for driving the respective antennas, whereby the distribution of quantity of ions reaching a specimen can be regulated as the position where the plasma is generated is controllable.
  • a quartz bell-jar 21 in the shape of a silk hat is provided and the antenna module is installed on the side of the bell-jar.
  • the wall thickness of at least the side portion of the bell-jar can be reduced with the effect of improving coupling with a plasma.
  • the present invention it is possible to provide a method and apparatus capable of meeting various requirements (plasma uniformity, uniformity controllability, the provision of opposed grounding electrodes and so on) of the plasma processing chamber which is simple in construction.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
EP96303508A 1995-05-19 1996-05-17 Méthode et dispositif pour un appareil de traitement par plasma Withdrawn EP0743671A3 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP120992/95 1995-05-19
JP12099295 1995-05-19
JP202016/95 1995-08-08
JP20201695 1995-08-08

Publications (2)

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EP0743671A2 true EP0743671A2 (fr) 1996-11-20
EP0743671A3 EP0743671A3 (fr) 1997-07-16

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US (2) US6034346A (fr)
EP (1) EP0743671A3 (fr)
KR (1) KR960043012A (fr)
SG (1) SG50732A1 (fr)
TW (1) TW339497B (fr)

Cited By (3)

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WO2000043568A1 (fr) * 1999-01-22 2000-07-27 Toyo Kohan Co., Ltd. Appareil de depot chimique en phase vapeur a plasma par micro-ondes
DE102006037144A1 (de) * 2006-08-09 2008-02-28 Roth & Rau Ag ECR-Plasmaquelle
CN114582698A (zh) * 2022-03-02 2022-06-03 中国科学院光电技术研究所 用于大曲率非平面器件的低温等离子体刻蚀装置及方法

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TW403959B (en) * 1996-11-27 2000-09-01 Hitachi Ltd Plasma treatment device
DE19801366B4 (de) * 1998-01-16 2008-07-03 Applied Materials Gmbh & Co. Kg Vorrichtung zur Erzeugung von Plasma
US6516742B1 (en) * 1998-02-26 2003-02-11 Micron Technology, Inc. Apparatus for improved low pressure inductively coupled high density plasma reactor
WO1999049705A1 (fr) * 1998-03-20 1999-09-30 Tokyo Electron Limited Dispositif de traitement plasmique
JP3542514B2 (ja) * 1999-01-19 2004-07-14 株式会社日立製作所 ドライエッチング装置
TW516113B (en) * 1999-04-14 2003-01-01 Hitachi Ltd Plasma processing device and plasma processing method
US6310577B1 (en) * 1999-08-24 2001-10-30 Bethel Material Research Plasma processing system with a new inductive antenna and hybrid coupling of electronagnetic power
KR100338057B1 (ko) * 1999-08-26 2002-05-24 황 철 주 유도 결합형 플라즈마 발생용 안테나 장치
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US6034346A (en) 2000-03-07
US6172321B1 (en) 2001-01-09

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