TW339497B - Method of processing plasma and processor of plasma - Google Patents
Method of processing plasma and processor of plasmaInfo
- Publication number
- TW339497B TW339497B TW085105920A TW85105920A TW339497B TW 339497 B TW339497 B TW 339497B TW 085105920 A TW085105920 A TW 085105920A TW 85105920 A TW85105920 A TW 85105920A TW 339497 B TW339497 B TW 339497B
- Authority
- TW
- Taiwan
- Prior art keywords
- plasma
- processing
- processor
- specimen
- trial
- Prior art date
Links
- 238000000034 method Methods 0.000 title abstract 3
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 238000003672 processing method Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32211—Means for coupling power to the plasma
- H01J37/32229—Waveguides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3266—Magnetic control means
- H01J37/32678—Electron cyclotron resonance
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12099295 | 1995-05-19 | ||
JP20201695 | 1995-08-08 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW339497B true TW339497B (en) | 1998-09-01 |
Family
ID=26458465
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW085105920A TW339497B (en) | 1995-05-19 | 1996-05-18 | Method of processing plasma and processor of plasma |
Country Status (5)
Country | Link |
---|---|
US (2) | US6034346A (zh) |
EP (1) | EP0743671A3 (zh) |
KR (1) | KR960043012A (zh) |
SG (1) | SG50732A1 (zh) |
TW (1) | TW339497B (zh) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102057762A (zh) * | 2008-06-11 | 2011-05-11 | 东京毅力科创株式会社 | 等离子体处理装置及等离子体处理方法 |
TWI601919B (zh) * | 2016-07-11 | 2017-10-11 | 馗鼎奈米科技股份有限公司 | 電漿淨化模組 |
TWI640728B (zh) * | 2013-07-17 | 2018-11-11 | 美商蘭姆研究公司 | 氣冷式法拉第屏及用以使用該法拉第屏之方法 |
TWI731934B (zh) * | 2016-02-29 | 2021-07-01 | 美商蘭姆研究公司 | 電漿處理系統及使用電漿處理系統的基板處理方法 |
CN113892166A (zh) * | 2020-04-30 | 2022-01-04 | 株式会社日立高新技术 | 等离子处理装置 |
TWI802840B (zh) * | 2020-01-27 | 2023-05-21 | 日商日立全球先端科技股份有限公司 | 電漿處理裝置 |
Families Citing this family (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW403959B (en) * | 1996-11-27 | 2000-09-01 | Hitachi Ltd | Plasma treatment device |
DE19801366B4 (de) * | 1998-01-16 | 2008-07-03 | Applied Materials Gmbh & Co. Kg | Vorrichtung zur Erzeugung von Plasma |
US6516742B1 (en) * | 1998-02-26 | 2003-02-11 | Micron Technology, Inc. | Apparatus for improved low pressure inductively coupled high density plasma reactor |
WO1999049705A1 (fr) * | 1998-03-20 | 1999-09-30 | Tokyo Electron Limited | Dispositif de traitement plasmique |
JP3542514B2 (ja) * | 1999-01-19 | 2004-07-14 | 株式会社日立製作所 | ドライエッチング装置 |
WO2000043568A1 (fr) * | 1999-01-22 | 2000-07-27 | Toyo Kohan Co., Ltd. | Appareil de depot chimique en phase vapeur a plasma par micro-ondes |
TW516113B (en) * | 1999-04-14 | 2003-01-01 | Hitachi Ltd | Plasma processing device and plasma processing method |
US6310577B1 (en) * | 1999-08-24 | 2001-10-30 | Bethel Material Research | Plasma processing system with a new inductive antenna and hybrid coupling of electronagnetic power |
KR100338057B1 (ko) * | 1999-08-26 | 2002-05-24 | 황 철 주 | 유도 결합형 플라즈마 발생용 안테나 장치 |
JP4678905B2 (ja) * | 1999-12-20 | 2011-04-27 | 徳芳 佐藤 | プラズマ処理装置 |
JP4504511B2 (ja) * | 2000-05-26 | 2010-07-14 | 忠弘 大見 | プラズマ処理装置 |
US6777699B1 (en) * | 2002-03-25 | 2004-08-17 | George H. Miley | Methods, apparatus, and systems involving ion beam generation |
US7258694B1 (en) | 2002-06-17 | 2007-08-21 | Origin Medsystems, Inc. | Medical punch and surgical procedure |
JP2004239412A (ja) * | 2003-02-07 | 2004-08-26 | Tokai Rubber Ind Ltd | 樹脂チューブの接続構造及び樹脂チューブの接続方法 |
DE10322367A1 (de) * | 2003-05-13 | 2004-12-02 | Dreyer, Dietmar, Dipl.-Ing. (FH) | Speicherbatterie auf der Basis eines Hochfrequenzplasmas |
JP2006324551A (ja) * | 2005-05-20 | 2006-11-30 | Shibaura Mechatronics Corp | プラズマ発生装置及びプラズマ処理装置 |
JP5213150B2 (ja) * | 2005-08-12 | 2013-06-19 | 国立大学法人東北大学 | プラズマ処理装置及びプラズマ処理装置を用いた製品の製造方法 |
DE102006037144B4 (de) * | 2006-08-09 | 2010-05-20 | Roth & Rau Ag | ECR-Plasmaquelle |
KR101119627B1 (ko) * | 2007-03-29 | 2012-03-07 | 도쿄엘렉트론가부시키가이샤 | 플라즈마 처리 장치 |
EP1976346A1 (en) * | 2007-03-30 | 2008-10-01 | Ecole Polytechnique | Apparatus for generating a plasma |
EP2420113A4 (en) * | 2009-04-14 | 2014-04-02 | Rf Thummim Technologies Inc | METHOD AND DEVICE FOR EXPLORING RESONANCES IN MOLECULES |
WO2011116187A1 (en) | 2010-03-17 | 2011-09-22 | Rf Thummim Technologies, Inc. | Method and apparatus for electromagnetically producing a disturbance in a medium with simultaneous resonance of acoustic waves created by the disturbance |
JP2014157758A (ja) * | 2013-02-18 | 2014-08-28 | Sumitomo Heavy Ind Ltd | マイクロ波イオン源及びその起動方法 |
US9613783B2 (en) * | 2014-07-24 | 2017-04-04 | Applied Materials, Inc. | Method and apparatus for controlling a magnetic field in a plasma chamber |
CN108242380B (zh) * | 2016-12-27 | 2019-09-06 | 中微半导体设备(上海)股份有限公司 | 一种均匀抽真空的双工位真空处理器 |
US11915850B2 (en) | 2017-12-20 | 2024-02-27 | Applied Materials, Inc. | Two channel cosine-theta coil assembly |
JP7450475B2 (ja) * | 2020-06-30 | 2024-03-15 | 東京エレクトロン株式会社 | プラズマ処理装置 |
CN114582698B (zh) * | 2022-03-02 | 2023-09-19 | 中国科学院光电技术研究所 | 用于大曲率非平面器件的低温等离子体刻蚀装置及方法 |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0754759B2 (ja) * | 1987-04-27 | 1995-06-07 | 日本電信電話株式会社 | プラズマ処理方法および装置並びにプラズマ処理装置用モード変換器 |
US5024716A (en) * | 1988-01-20 | 1991-06-18 | Canon Kabushiki Kaisha | Plasma processing apparatus for etching, ashing and film-formation |
DE3880135T2 (de) * | 1988-09-08 | 1993-09-16 | Asahi Glass Co Ltd | Zerstaeubungsverfahren mittels eines bandfoermigen plasmaflusses und geraet zur handhabung dieses verfahrens. |
US5202095A (en) * | 1988-12-27 | 1993-04-13 | Matsushita Electric Industrial Co., Ltd. | Microwave plasma processor |
US4906900A (en) * | 1989-04-03 | 1990-03-06 | Board Of Trustees Operating Michigan State University | Coaxial cavity type, radiofrequency wave, plasma generating apparatus |
US5134965A (en) * | 1989-06-16 | 1992-08-04 | Hitachi, Ltd. | Processing apparatus and method for plasma processing |
US4948458A (en) * | 1989-08-14 | 1990-08-14 | Lam Research Corporation | Method and apparatus for producing magnetically-coupled planar plasma |
JP2546405B2 (ja) * | 1990-03-12 | 1996-10-23 | 富士電機株式会社 | プラズマ処理装置ならびにその運転方法 |
FR2665323B1 (fr) * | 1990-07-27 | 1996-09-27 | Reydel J | Dispositif de production d'un plasma. |
JPH04358077A (ja) * | 1991-06-03 | 1992-12-11 | Hitachi Ltd | マイクロ波プラズマcvd装置 |
DE4118973C2 (de) * | 1991-06-08 | 1999-02-04 | Fraunhofer Ges Forschung | Vorrichtung zur plasmaunterstützten Bearbeitung von Substraten und Verwendung dieser Vorrichtung |
US5480533A (en) * | 1991-08-09 | 1996-01-02 | Matsushita Electric Industrial Co., Ltd. | Microwave plasma source |
US5321222A (en) * | 1991-11-14 | 1994-06-14 | Martin Marietta Energy Systems, Inc. | Variable frequency microwave furnace system |
US5280154A (en) * | 1992-01-30 | 1994-01-18 | International Business Machines Corporation | Radio frequency induction plasma processing system utilizing a uniform field coil |
JP3328844B2 (ja) * | 1992-09-24 | 2002-09-30 | 株式会社日立製作所 | プラズマプロセス装置 |
US5433812A (en) * | 1993-01-19 | 1995-07-18 | International Business Machines Corporation | Apparatus for enhanced inductive coupling to plasmas with reduced sputter contamination |
JP3208931B2 (ja) * | 1993-06-23 | 2001-09-17 | ソニー株式会社 | プラズマ処理装置とこれを用いたプラズマ処理方法 |
DE4336830A1 (de) * | 1993-10-28 | 1995-05-04 | Leybold Ag | Plasma-Zerstäubungsanlage mit Mikrowellenunterstützung |
DE4337119C2 (de) * | 1993-10-29 | 1996-10-24 | Forsch Applikationslabor Plasm | VHF-Plasmaquelle |
JP3124204B2 (ja) * | 1994-02-28 | 2001-01-15 | 株式会社東芝 | プラズマ処理装置 |
-
1996
- 1996-05-17 KR KR1019960016596A patent/KR960043012A/ko not_active Application Discontinuation
- 1996-05-17 SG SG1996009821A patent/SG50732A1/en unknown
- 1996-05-17 EP EP96303508A patent/EP0743671A3/en not_active Withdrawn
- 1996-05-17 US US08/649,190 patent/US6034346A/en not_active Expired - Fee Related
- 1996-05-18 TW TW085105920A patent/TW339497B/zh active
-
1999
- 1999-11-04 US US09/433,551 patent/US6172321B1/en not_active Expired - Fee Related
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102057762A (zh) * | 2008-06-11 | 2011-05-11 | 东京毅力科创株式会社 | 等离子体处理装置及等离子体处理方法 |
TWI640728B (zh) * | 2013-07-17 | 2018-11-11 | 美商蘭姆研究公司 | 氣冷式法拉第屏及用以使用該法拉第屏之方法 |
TWI731934B (zh) * | 2016-02-29 | 2021-07-01 | 美商蘭姆研究公司 | 電漿處理系統及使用電漿處理系統的基板處理方法 |
TWI601919B (zh) * | 2016-07-11 | 2017-10-11 | 馗鼎奈米科技股份有限公司 | 電漿淨化模組 |
US9993829B2 (en) | 2016-07-11 | 2018-06-12 | Creating Nano Technologies, Inc. | Plasma purification module |
TWI802840B (zh) * | 2020-01-27 | 2023-05-21 | 日商日立全球先端科技股份有限公司 | 電漿處理裝置 |
CN113892166A (zh) * | 2020-04-30 | 2022-01-04 | 株式会社日立高新技术 | 等离子处理装置 |
US12002655B2 (en) | 2020-04-30 | 2024-06-04 | Hitachi High-Tech Corporation | Plasma processing apparatus |
Also Published As
Publication number | Publication date |
---|---|
US6172321B1 (en) | 2001-01-09 |
US6034346A (en) | 2000-03-07 |
EP0743671A2 (en) | 1996-11-20 |
KR960043012A (ko) | 1996-12-21 |
EP0743671A3 (en) | 1997-07-16 |
SG50732A1 (en) | 1998-07-20 |
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