WO2000043568A1 - Appareil de depot chimique en phase vapeur a plasma par micro-ondes - Google Patents

Appareil de depot chimique en phase vapeur a plasma par micro-ondes Download PDF

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Publication number
WO2000043568A1
WO2000043568A1 PCT/JP2000/000296 JP0000296W WO0043568A1 WO 2000043568 A1 WO2000043568 A1 WO 2000043568A1 JP 0000296 W JP0000296 W JP 0000296W WO 0043568 A1 WO0043568 A1 WO 0043568A1
Authority
WO
WIPO (PCT)
Prior art keywords
microwave
plasma cvd
substrate
vacuum
microwave plasma
Prior art date
Application number
PCT/JP2000/000296
Other languages
English (en)
Japanese (ja)
Inventor
Michifumi Tanga
Original Assignee
Toyo Kohan Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toyo Kohan Co., Ltd. filed Critical Toyo Kohan Co., Ltd.
Priority to AU30761/00A priority Critical patent/AU3076100A/en
Publication of WO2000043568A1 publication Critical patent/WO2000043568A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges

Definitions

  • the present invention relates to a microwave plasma CVD device capable of generating plasma by microwaves and forming a diamond film or the like on the surface of a substrate.
  • a plate-like electrode 65 is arranged concentrically in a reaction chamber 64 formed by upper and lower plates 60 and 61 and an annular ring 63. Is supported on the lower plate 61 by an annular dielectric barrier 66.
  • lr The central part of the lower space of the dielectric barrier 66 is connected to the microwave waveguide 67, and the peripheral part is connected to the peripheral part 68 in the reaction chamber 64 through the dielectric barrier 66. Through this, it communicates with a plasma generation space 70 provided between the electrode 65 and the top plate 69.
  • the reaction chamber 164 has a gas supply port 711 for flowing a source gas into the reaction chamber 164, and a vacuum for evacuating the reaction chamber 164 and discharging excess gas.
  • a gas outlet 72 is provided.
  • a flat disk-shaped plasma 73 can be formed on the surface of the electrode 65 by sending microwaves into the reaction chamber 64 through the microwave waveguide 67 to excite the raw material gas. it can.
  • the microwave plasma CVD apparatus uses only a single microwave waveguide 67. Since there was no electrode, the size of the electrode 65 supporting the base 74 was limited, and a diamond film or the like could not be formed on the surface of the long base 74.
  • the present invention can solve the above-mentioned problem. That is, even if the substrate placed on the substrate support is long, a film of an appropriate thickness can be uniformly and reliably formed on the surface of the substrate.
  • An object of the present invention is to provide a microphone mouth-wave plasma CVD device that can be actually formed.
  • a microwave plasma CVD apparatus comprises: a horizontally long vacuum container; a horizontally long substrate support table provided in the vacuum container and supporting the substrate; A plurality of electrodes which are arranged at an interval in the longitudinal direction at the top and which form a main part of the plasma generating means, and which are arranged at least along the outer side of the vacuum vessel at an interval along at least one outer side thereof; A plurality of microphone aperture waveguides, each of which is provided with a corresponding dielectric window connected to a corresponding plurality of electrodes, gas supply means for supplying a raw material gas to a vacuum vessel, and exhaust of gas in the vacuum vessel Evacuation means.
  • the microwave plasma CVD device according to the present invention is also characterized in that the microwave plasma CVD device has the following configuration.
  • a plurality of microwave waveguides are alternately arranged in a zigzag pattern along both sides of the vacuum vessel.
  • FIG. 1 is a plan view showing the overall configuration of a microwave plasma CVD device according to one embodiment of the present invention.
  • FIG. 2 is a cross-sectional view taken along the line I-I of FIG. Figure 3 shows FIG. 2 is a sectional view taken along the line II-II in FIG.
  • FIG. 4 is an enlarged sectional front view of a main part of a microwave plasma CVD apparatus according to one embodiment of the present invention.
  • FIG. 5 is an enlarged cross-sectional front view of the relevant part when the lifting device is driven to change the distance between the electrode and the base.
  • FIG. 6 is a diagram illustrating the configuration of a conventional microwave plasma CVD apparatus.
  • a horizontally long base support 12 for supporting the base 11 is disposed inside the horizontally long vacuum vessel 10.
  • a plurality of electrodes 14 forming a main part of the plasma generating means are arranged at intervals in the longitudinal direction.
  • a plurality of microwave waveguides 20 are arranged in a zigzag manner on both outer sides of the vacuum vessel 10 at intervals.
  • a dielectric window 13 made of a dielectric material such as quartz glass provided at the front end of the microwave waveguide 20 is connected to the corresponding electrodes 14 in a laminated state.
  • gas inlets (gas supply means) 15 for supplying a source gas (for example, a mixed gas of hydrogen and methane) into the vacuum vessel 10 are provided on the side walls of the vacuum vessel 10.
  • a gas outlet (vacuum exhaust means) 16 for evacuating the inside of the vacuum vessel 10 and discharging excess gas is provided.
  • each microwave waveguide 20 composed of an upstream horizontal pipe 18 and a downstream vertical pipe 19. It is connected to the side end.
  • the upstream end of each microwave waveguide 20 is connected to an incident wave power motor 21, a tuner 22, a reflected wave power motor 23, and an isolator 24. Through a magnetron that generates microwaves It is connected to 25.
  • the horizontally long vacuum vessel 10 is configured by connecting an upper wall 26 having a water cooling structure and a lower If wall 27 with an annular side wall 28 having a water cooling structure.
  • a horizontally long vacuum space 29 is formed therein.
  • a horizontally long base support 12 is provided so as to be able to move up and down through a through hole 30 provided in a lower wall 27.
  • the base support 12 is linked to an elevating device 31 such as a hydraulic cylinder positioned below the base support 12, and the base support 12 and the base support 1 2
  • the substrate 11 placed and supported on the top surface of the substrate can be raised and lowered in a stepless manner.
  • the base support 12 also has a water-cooled structure for receiving high heat, and a base mounting plate 32 for mounting and supporting the base 11 is fixed to the top surface thereof.
  • a hermetic seal 33 such as a ring or the like for maintaining the hermeticity of the vacuum space 29 is provided between the inner peripheral surface of the through hole 30 and the outer peripheral surface of the base support 12. I have.
  • the base of the lifting device 31 is fixedly mounted on a reciprocating carriage 33a, and the reciprocating carriage 33a reciprocates longitudinally on a guide platen 33b. It is mounted so that it can reciprocate freely by a mobile mechanism.
  • the reciprocating mechanism includes a nut 33c fixed to the bottom of the reciprocating carriage 33a, a linear ball shaft 33d screwed to the nut 33c, and a linear ball shaft 3d. It is composed of a rotating motor 33e that drives 3d in rotation.
  • the base 11 (see FIGS. 4 and 5) supported on the base support 12 can be moved in the longitudinal direction by driving the rotary motor 33e.
  • both sides of the lower wall 27 are hermetically slid following the reciprocating movement of the base support 12.
  • Seal plates 27a and 27b are attached.
  • four hollow disk-shaped electrodes 14 are provided at the upper central portion of the vacuum space 29 of the vacuum vessel 10, and four electrodes of the horizontally long base support 12 are provided. It is arranged so as to face the longitudinal direction vertically.
  • Each electrode 14 is formed of a small-diameter portion 34 whose end surface protrudes downward, and a large-diameter portion 35 whose annular end surface is located above the end surface of the small-diameter portion 34.
  • Each electrode 14 also has a cooling structure because it receives high heat. That is, a cooling water inflow space 36 is formed inside the large diameter portion 35 of the electrode 14, and a cooling water supply pipe 37 and a cooling water recirculation pipe 38 are provided in the cooling water inflow space 36.
  • the tip of the cooling pipe 39 having a double pipe structure is open.
  • the ic cooling pipe 39 is led out through a through hole 40 provided in the upper wall 26 of the vacuum vessel 10, and thereafter, the downstream vertical pipe 19 and the upstream horizontal pipe of each microwave waveguide 20. It is led out through the end of the tube 18.
  • An annular communication hole 41 is formed between the inner peripheral surface of the through hole 40 and the outer peripheral surface of the cooling pipe 39.
  • the lower end opening of the annular communication hole 41 is communicatively connected to a space 17 formed inside the dielectric window 13.
  • the upper end opening of the annular communication hole 41 is formed by a vertical waveguide formed between the inner peripheral surface of the downstream vertical tube 19 of each microwave waveguide 20 and the outer peripheral surface of the cooling pipe 39. Through a passage 42, it is connected to a horizontal waveguide 43 formed in the upstream horizontal tube 18.
  • the block 44 is attached, and the outer peripheral surface of the block 44 is formed in a taper shape having a diameter gradually decreasing downward.
  • the block 44 is preferably made of aluminum.
  • the base of the first plasma regulating plate 45 is formed on both sides of the dielectric window 13 and the electrode 14 in a laminated state, and approximately the entire length of the lower surface of the upper wall 26. It protrudes over the country.
  • the first plasma regulating plate 45 is preferably made of aluminum.
  • a second plasma regulating plate 46 is disposed below the vacuum space 29 of the vacuum vessel 10 on both sides of the base support 12, and the lower end face thereof is located at the lower wall of the vacuum vessel. Connected to 27.
  • the upper end surface of the second plasma regulating plate 46 is substantially the same as the surface of the substrate 11 on the electrode 14 at the position taken by the electrode 14 when forming the plasma 47 having the maximum thickness on the electrode 14. It extends upward to the same position.
  • the second bra c- gap regulating plate 46
  • each magnetron 25 By applying a smoothed DC voltage to each magnetron 25 after full-wave rectification, the microwaves continuously oscillated at a constant output from each magnetron 25 are reflected by the ⁇ f Wave power motors 23, tuners 22, incident wave power motors 21 and microwave waveguides 20 are guided through each dielectric window 13 into the vacuum vessel 10, and the horizontal oblong Irradiation is performed on the substrate 11 supported on the substrate support 12. Then, a film made of a hard substance such as diamond can be formed on the surface of the substrate 11 by decomposition of the source gas.
  • a hard substance such as diamond
  • the base support 12 is formed to be horizontally long, and a plurality of laminates each composed of the dielectric window 13 and the electrode 14 are spaced on the base support 12 in the longitudinal direction. Since it is arranged with a gap, a plasma 47 having a sufficient length in the longitudinal direction can be generated on the base support 12, and the base 11 having a sufficient length in the longitudinal direction can be generated. Even if there is, a film made of a hard substance can be reliably formed on the surface. ⁇ In addition, by changing the number of laminated bodies consisting of the dielectric window 13 and the electrode 14, even if the substrate 11 is short, a film made of a hard substance can be reliably formed on the surface. can do.
  • a plurality of microwave waveguides 20 are arranged in a staggered manner on both outer sides of the vacuum vessel 10 at intervals, so that even if the structure of the magnetron 25 is large, It is possible to reduce the distance * r between the laminate composed of the dielectric window 13 and the electrode 14, and to generate plasma 47 having a uniform thickness on the base support 12.
  • the base support 12 is configured to be able to reciprocate in the longitudinal direction, the plasma 47 having a uniform thickness is formed on the base support 12 from this surface as well. Can occur.
  • the base support 12 can be raised and lowered in a stepless manner by driving the lifting and lowering device 31, so that a plasma having a desired shape is formed. 47 can be formed in the plasma formation space between the surface of the substrate 11 and the electrode 14, and a film having a predetermined thickness over the entire surface is obtained regardless of the thickness or the shape of the substrate 11. It can be the surface of the substrate 11.
  • a horizontally long substrate support for supporting a substrate is disposed in a horizontally long vacuum vessel, and a main portion of plasma generating means is formed above the substrate support.
  • a plurality of electrodes are arranged at intervals in the longitudinal direction, and a plurality of microwave waveguides are arranged at intervals along at least one outer side of the vacuum vessel, corresponding to a dielectric window provided at the tip thereof.
  • Microphone mouth wave by connecting to each of the plurality of electrodes
  • the plasma CVD device is configured, a plasma having a sufficient length in the longitudinal direction can be generated on the substrate support base, and the substrate has a sufficient length in the longitudinal direction.
  • a film made of a hard substance can be reliably formed on the surface. Further, by changing the number of the plurality of laminated bodies composed of the dielectric window and the electrode, even if the substrate is short, a film made of a hard substance can be surely formed on the surface thereof.
  • the base support is configured to be able to reciprocate in the longitudinal direction, a plasma having a uniform thickness can be generated on the base support from this surface as well.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

Cette invention se rapporte à un appareil de dépôt chimique en phase vapeur à plasma par micro-ondes, qui permet de former un film d'une épaisseur appropriée uniformément et de façon fiable même sur un long substrat placé sur un support porte-substrat et comprenant à cet effet une enceinte à vide latéralement longue (10), un support porte-substrat latéralement long (12) placé dans l'enceinte à vide (10) et destiné à servir de support au substrat (11), des électrodes (14) placées à intervalles longitudinaux au-dessus du support porte-substrat (12) et constituant la partie essentielle de l'organe générateur de plasma, des guides d'ondes à micro-ondes (20) placés le long d'un côté extérieur au moins de l'enceinte à vide (10) et reliés aux électrodes (14) correspondant aux fenêtres diélectriques (13) situées aux extrémités respectives du guide d'ondes à micro-ondes (20), un organe d'alimentation en gaz (15) servant à acheminer une matière en phase gazeuse dans l'enceinte à vide (10), et un organe d'évacuation (16) servant à faire sortir le gaz de l'enceinte à vide (10).
PCT/JP2000/000296 1999-01-22 2000-01-21 Appareil de depot chimique en phase vapeur a plasma par micro-ondes WO2000043568A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU30761/00A AU3076100A (en) 1999-01-22 2000-01-21 Microwave plasma cvd apparatus

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP11/14965 1999-01-22
JP1496599 1999-01-22

Publications (1)

Publication Number Publication Date
WO2000043568A1 true WO2000043568A1 (fr) 2000-07-27

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PCT/JP2000/000296 WO2000043568A1 (fr) 1999-01-22 2000-01-21 Appareil de depot chimique en phase vapeur a plasma par micro-ondes

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AU (1) AU3076100A (fr)
WO (1) WO2000043568A1 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010061860A (ja) * 2008-09-01 2010-03-18 Chube Univ プラズマ生成装置
US20120031335A1 (en) * 2010-04-30 2012-02-09 Applied Materials, Inc. Vertical inline cvd system

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6190857U (fr) * 1984-11-20 1986-06-12
JPH03191068A (ja) * 1989-12-20 1991-08-21 Matsushita Electric Ind Co Ltd マイクロ波プラズマ装置
US5122251A (en) * 1989-06-13 1992-06-16 Plasma & Materials Technologies, Inc. High density plasma deposition and etching apparatus
JPH06192839A (ja) * 1992-12-28 1994-07-12 Canon Inc 堆積膜形成方法および堆積膜形成装置
EP0702393A2 (fr) * 1994-09-16 1996-03-20 Daihen Corporation Appareil de traitement par plasma pour introduire une onde micrométrique issue d'un guide d'onde rectangulaire, à travers une feute allongée dans la chambre à plasma
EP0743671A2 (fr) * 1995-05-19 1996-11-20 Hitachi, Ltd. Méthode et dispositif pour un appareil de traitement par plasma
JPH1074748A (ja) * 1996-08-30 1998-03-17 Tokyo Electron Ltd プラズマ処理装置

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6190857U (fr) * 1984-11-20 1986-06-12
US5122251A (en) * 1989-06-13 1992-06-16 Plasma & Materials Technologies, Inc. High density plasma deposition and etching apparatus
JPH03191068A (ja) * 1989-12-20 1991-08-21 Matsushita Electric Ind Co Ltd マイクロ波プラズマ装置
JPH06192839A (ja) * 1992-12-28 1994-07-12 Canon Inc 堆積膜形成方法および堆積膜形成装置
EP0702393A2 (fr) * 1994-09-16 1996-03-20 Daihen Corporation Appareil de traitement par plasma pour introduire une onde micrométrique issue d'un guide d'onde rectangulaire, à travers une feute allongée dans la chambre à plasma
EP0743671A2 (fr) * 1995-05-19 1996-11-20 Hitachi, Ltd. Méthode et dispositif pour un appareil de traitement par plasma
JPH1074748A (ja) * 1996-08-30 1998-03-17 Tokyo Electron Ltd プラズマ処理装置

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010061860A (ja) * 2008-09-01 2010-03-18 Chube Univ プラズマ生成装置
US20120031335A1 (en) * 2010-04-30 2012-02-09 Applied Materials, Inc. Vertical inline cvd system
JP2013526067A (ja) * 2010-04-30 2013-06-20 アプライド マテリアルズ インコーポレイテッド 縦型インラインｃｖｄシステム
US9324597B2 (en) 2010-04-30 2016-04-26 Applied Materials, Inc. Vertical inline CVD system

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Publication number Publication date
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