SG50732A1 - Method and apparatus for plasma processing apparatus - Google Patents

Method and apparatus for plasma processing apparatus

Info

Publication number
SG50732A1
SG50732A1 SG1996009821A SG1996009821A SG50732A1 SG 50732 A1 SG50732 A1 SG 50732A1 SG 1996009821 A SG1996009821 A SG 1996009821A SG 1996009821 A SG1996009821 A SG 1996009821A SG 50732 A1 SG50732 A1 SG 50732A1
Authority
SG
Singapore
Prior art keywords
plasma processing
processing apparatus
plasma
processing
Prior art date
Application number
SG1996009821A
Other languages
English (en)
Inventor
Kaji Tetsunori
Ken Yoshioka
Manabu Edamura
Ryoji Nishio
Saburou Kanai
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of SG50732A1 publication Critical patent/SG50732A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/32229—Waveguides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H01J37/32678—Electron cyclotron resonance

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
SG1996009821A 1995-05-19 1996-05-17 Method and apparatus for plasma processing apparatus SG50732A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP12099295 1995-05-19
JP20201695 1995-08-08

Publications (1)

Publication Number Publication Date
SG50732A1 true SG50732A1 (en) 1998-07-20

Family

ID=26458465

Family Applications (1)

Application Number Title Priority Date Filing Date
SG1996009821A SG50732A1 (en) 1995-05-19 1996-05-17 Method and apparatus for plasma processing apparatus

Country Status (5)

Country Link
US (2) US6034346A (fr)
EP (1) EP0743671A3 (fr)
KR (1) KR960043012A (fr)
SG (1) SG50732A1 (fr)
TW (1) TW339497B (fr)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW403959B (en) * 1996-11-27 2000-09-01 Hitachi Ltd Plasma treatment device
DE19801366B4 (de) * 1998-01-16 2008-07-03 Applied Materials Gmbh & Co. Kg Vorrichtung zur Erzeugung von Plasma
US6516742B1 (en) * 1998-02-26 2003-02-11 Micron Technology, Inc. Apparatus for improved low pressure inductively coupled high density plasma reactor
WO1999049705A1 (fr) * 1998-03-20 1999-09-30 Tokyo Electron Limited Dispositif de traitement plasmique
JP3542514B2 (ja) * 1999-01-19 2004-07-14 株式会社日立製作所 ドライエッチング装置
AU3076100A (en) * 1999-01-22 2000-08-07 Toyo Kohan Co. Ltd. Microwave plasma cvd apparatus
TW516113B (en) * 1999-04-14 2003-01-01 Hitachi Ltd Plasma processing device and plasma processing method
US6310577B1 (en) * 1999-08-24 2001-10-30 Bethel Material Research Plasma processing system with a new inductive antenna and hybrid coupling of electronagnetic power
KR100338057B1 (ko) * 1999-08-26 2002-05-24 황 철 주 유도 결합형 플라즈마 발생용 안테나 장치
JP4678905B2 (ja) * 1999-12-20 2011-04-27 徳芳 佐藤 プラズマ処理装置
JP4504511B2 (ja) * 2000-05-26 2010-07-14 忠弘 大見 プラズマ処理装置
US6777699B1 (en) * 2002-03-25 2004-08-17 George H. Miley Methods, apparatus, and systems involving ion beam generation
US7258694B1 (en) 2002-06-17 2007-08-21 Origin Medsystems, Inc. Medical punch and surgical procedure
JP2004239412A (ja) * 2003-02-07 2004-08-26 Tokai Rubber Ind Ltd 樹脂チューブの接続構造及び樹脂チューブの接続方法
DE10322367A1 (de) * 2003-05-13 2004-12-02 Dreyer, Dietmar, Dipl.-Ing. (FH) Speicherbatterie auf der Basis eines Hochfrequenzplasmas
JP2006324551A (ja) * 2005-05-20 2006-11-30 Shibaura Mechatronics Corp プラズマ発生装置及びプラズマ処理装置
JP5213150B2 (ja) * 2005-08-12 2013-06-19 国立大学法人東北大学 プラズマ処理装置及びプラズマ処理装置を用いた製品の製造方法
DE102006037144B4 (de) * 2006-08-09 2010-05-20 Roth & Rau Ag ECR-Plasmaquelle
KR101119627B1 (ko) * 2007-03-29 2012-03-07 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치
EP1976346A1 (fr) * 2007-03-30 2008-10-01 Ecole Polytechnique Appareil de génération de plasma
DE112009001422T5 (de) * 2008-06-11 2011-06-01 Tohoku University, Sendai Plasma-Processing-Vorrichtung und Plasma-Vorrichtung-Verfahren
EP2420113A4 (fr) * 2009-04-14 2014-04-02 Rf Thummim Technologies Inc Procédé et appareil pour l'excitation de résonances dans des molécules
US9295968B2 (en) 2010-03-17 2016-03-29 Rf Thummim Technologies, Inc. Method and apparatus for electromagnetically producing a disturbance in a medium with simultaneous resonance of acoustic waves created by the disturbance
JP2014157758A (ja) * 2013-02-18 2014-08-28 Sumitomo Heavy Ind Ltd マイクロ波イオン源及びその起動方法
US9885493B2 (en) 2013-07-17 2018-02-06 Lam Research Corporation Air cooled faraday shield and methods for using the same
US9613783B2 (en) * 2014-07-24 2017-04-04 Applied Materials, Inc. Method and apparatus for controlling a magnetic field in a plasma chamber
US9966231B2 (en) * 2016-02-29 2018-05-08 Lam Research Corporation Direct current pulsing plasma systems
TWI601919B (zh) 2016-07-11 2017-10-11 馗鼎奈米科技股份有限公司 電漿淨化模組
CN108242380B (zh) * 2016-12-27 2019-09-06 中微半导体设备(上海)股份有限公司 一种均匀抽真空的双工位真空处理器
US11915850B2 (en) 2017-12-20 2024-02-27 Applied Materials, Inc. Two channel cosine-theta coil assembly
KR102521817B1 (ko) * 2020-01-27 2023-04-14 주식회사 히타치하이테크 플라스마 처리 장치
WO2021220459A1 (fr) * 2020-04-30 2021-11-04 株式会社日立ハイテク Dispositif de traitement au plasma
JP7450475B2 (ja) * 2020-06-30 2024-03-15 東京エレクトロン株式会社 プラズマ処理装置
CN114582698B (zh) * 2022-03-02 2023-09-19 中国科学院光电技术研究所 用于大曲率非平面器件的低温等离子体刻蚀装置及方法

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0754759B2 (ja) * 1987-04-27 1995-06-07 日本電信電話株式会社 プラズマ処理方法および装置並びにプラズマ処理装置用モード変換器
US5024716A (en) * 1988-01-20 1991-06-18 Canon Kabushiki Kaisha Plasma processing apparatus for etching, ashing and film-formation
EP0357824B1 (fr) * 1988-09-08 1993-04-07 Joshin Uramoto Méthode de pulvérisation par flux de plasma en ruban et appareil pour la mise en oeuvre de cette méthode
US5202095A (en) * 1988-12-27 1993-04-13 Matsushita Electric Industrial Co., Ltd. Microwave plasma processor
US4906900A (en) * 1989-04-03 1990-03-06 Board Of Trustees Operating Michigan State University Coaxial cavity type, radiofrequency wave, plasma generating apparatus
US5134965A (en) * 1989-06-16 1992-08-04 Hitachi, Ltd. Processing apparatus and method for plasma processing
US4948458A (en) * 1989-08-14 1990-08-14 Lam Research Corporation Method and apparatus for producing magnetically-coupled planar plasma
JP2546405B2 (ja) * 1990-03-12 1996-10-23 富士電機株式会社 プラズマ処理装置ならびにその運転方法
FR2665323B1 (fr) * 1990-07-27 1996-09-27 Reydel J Dispositif de production d'un plasma.
JPH04358077A (ja) * 1991-06-03 1992-12-11 Hitachi Ltd マイクロ波プラズマｃｖｄ装置
DE4118973C2 (de) * 1991-06-08 1999-02-04 Fraunhofer Ges Forschung Vorrichtung zur plasmaunterstützten Bearbeitung von Substraten und Verwendung dieser Vorrichtung
US5480533A (en) * 1991-08-09 1996-01-02 Matsushita Electric Industrial Co., Ltd. Microwave plasma source
US5321222A (en) * 1991-11-14 1994-06-14 Martin Marietta Energy Systems, Inc. Variable frequency microwave furnace system
US5280154A (en) * 1992-01-30 1994-01-18 International Business Machines Corporation Radio frequency induction plasma processing system utilizing a uniform field coil
JP3328844B2 (ja) * 1992-09-24 2002-09-30 株式会社日立製作所 プラズマプロセス装置
US5433812A (en) * 1993-01-19 1995-07-18 International Business Machines Corporation Apparatus for enhanced inductive coupling to plasmas with reduced sputter contamination
JP3208931B2 (ja) * 1993-06-23 2001-09-17 ソニー株式会社 プラズマ処理装置とこれを用いたプラズマ処理方法
DE4336830A1 (de) * 1993-10-28 1995-05-04 Leybold Ag Plasma-Zerstäubungsanlage mit Mikrowellenunterstützung
DE4337119C2 (de) * 1993-10-29 1996-10-24 Forsch Applikationslabor Plasm VHF-Plasmaquelle
JP3124204B2 (ja) * 1994-02-28 2001-01-15 株式会社東芝 プラズマ処理装置

Also Published As

Publication number Publication date
KR960043012A (ko) 1996-12-21
EP0743671A2 (fr) 1996-11-20
EP0743671A3 (fr) 1997-07-16
TW339497B (en) 1998-09-01
US6034346A (en) 2000-03-07
US6172321B1 (en) 2001-01-09

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