EP0599605A3 - Halbleitervorrichtung mit Stropfühlerfunktion. - Google Patents
Halbleitervorrichtung mit Stropfühlerfunktion. Download PDFInfo
- Publication number
- EP0599605A3 EP0599605A3 EP93309339A EP93309339A EP0599605A3 EP 0599605 A3 EP0599605 A3 EP 0599605A3 EP 93309339 A EP93309339 A EP 93309339A EP 93309339 A EP93309339 A EP 93309339A EP 0599605 A3 EP0599605 A3 EP 0599605A3
- Authority
- EP
- European Patent Office
- Prior art keywords
- current
- semiconductor device
- sensing function
- sensing
- function
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/12—Modifications for increasing the maximum permissible switched current
- H03K17/127—Modifications for increasing the maximum permissible switched current in composite switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
- H03K17/0826—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in bipolar transistor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
- H03K17/0828—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in composite switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/12—Modifications for increasing the maximum permissible switched current
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
- H03K2217/0027—Measuring means of, e.g. currents through or voltages across the switch
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP04313825A JP3084982B2 (ja) | 1992-11-25 | 1992-11-25 | 半導体装置 |
JP313825/92 | 1992-11-25 |
Publications (2)
Publication Number | Publication Date |
---|---|
EP0599605A2 EP0599605A2 (de) | 1994-06-01 |
EP0599605A3 true EP0599605A3 (de) | 1995-01-04 |
Family
ID=18045969
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP93309339A Withdrawn EP0599605A3 (de) | 1992-11-25 | 1993-11-23 | Halbleitervorrichtung mit Stropfühlerfunktion. |
Country Status (3)
Country | Link |
---|---|
US (1) | US5396117A (de) |
EP (1) | EP0599605A3 (de) |
JP (1) | JP3084982B2 (de) |
Families Citing this family (72)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3070360B2 (ja) * | 1993-10-28 | 2000-07-31 | 富士電機株式会社 | ダブルゲ−ト型半導体装置の制御装置 |
BR9307470A (pt) * | 1992-11-18 | 1999-06-01 | Lipomatrix Inc | Implante |
DE69308131T2 (de) * | 1993-08-18 | 1997-05-28 | Cons Ric Microelettronica | Schaltung zur Begrenzung des Maximalstroms, den ein Leistungstransistor an eine Last liefert |
US5880624A (en) * | 1994-07-08 | 1999-03-09 | Kabushiki Kaisha Toshiba | Constant potential generating circuit and semiconductor device using same |
GB9420572D0 (en) * | 1994-10-12 | 1994-11-30 | Philips Electronics Uk Ltd | A protected switch |
GB9423076D0 (en) * | 1994-10-12 | 1995-01-04 | Philips Electronics Uk Ltd | A protected switch |
JP3125622B2 (ja) * | 1995-05-16 | 2001-01-22 | 富士電機株式会社 | 半導体装置 |
EP0752593A3 (de) * | 1995-07-07 | 1998-01-07 | Siemens Aktiengesellschaft | Verfahren zur Früherkennung von Ausfällen bei Leistungshalbleitermodulen |
US6100728A (en) * | 1995-07-31 | 2000-08-08 | Delco Electronics Corp. | Coil current limiting feature for an ignition coil driver module |
US5642253A (en) * | 1995-07-31 | 1997-06-24 | Delco Electronics Corporation | Multi-channel ignition coil driver module |
EP0757443B1 (de) * | 1995-07-31 | 2006-03-08 | STMicroelectronics S.r.l. | Schaltung zum gesteuerten unabhängigen Verbrauchen von gespeicherter induktiver Energie mehrerer induktiver Lasten |
JP3373704B2 (ja) * | 1995-08-25 | 2003-02-04 | 三菱電機株式会社 | 絶縁ゲートトランジスタ駆動回路 |
JP3149773B2 (ja) * | 1996-03-18 | 2001-03-26 | 富士電機株式会社 | 電流制限回路を備えた絶縁ゲートバイポーラトランジスタ |
US5828261A (en) * | 1996-11-13 | 1998-10-27 | Caterpillar Inc. | Gate drive circuit that controls a power transistor in three states |
JP2000022456A (ja) * | 1998-06-26 | 2000-01-21 | Nec Ic Microcomput Syst Ltd | 半導体集積回路 |
US6169425B1 (en) * | 1998-09-29 | 2001-01-02 | Lucent Technologies Inc. | Voltage sensing current foldback switch circuit |
AUPP991199A0 (en) * | 1999-04-21 | 1999-05-13 | University Of Sydney, The | Methods for diagnosing pre-cancerous and cancerous conditions |
DE19918966A1 (de) * | 1999-04-27 | 2000-11-02 | Daimler Chrysler Ag | Verfahren zur Überstromabschaltung eines Bipolartransistors mit isoliert angeordneter Gateelektrode und Vorrichtung zur Durchführung des Verfahrens |
US6194884B1 (en) * | 1999-11-23 | 2001-02-27 | Delphi Technologies, Inc. | Circuitry for maintaining a substantially constant sense current to load current ratio through an electrical load driving device |
JP2001211059A (ja) * | 2000-01-26 | 2001-08-03 | Toshiba Corp | 半導体スイッチ素子の過電流保護回路 |
US6717785B2 (en) | 2000-03-31 | 2004-04-06 | Denso Corporation | Semiconductor switching element driving circuit |
DE10057486A1 (de) * | 2000-06-15 | 2016-10-13 | Continental Teves Ag & Co. Ohg | Verfahren und Schaltungsanordnung zur Erkennung eines Defekts von Halbleiterschaftelementen und dessen/deren Verwendung in Kraftfahrzeugen, insbesondere Bremskraft- und Fahrdynamikreglern |
JP3741949B2 (ja) * | 2000-07-24 | 2006-02-01 | 矢崎総業株式会社 | 半導体スイッチング装置 |
JP3793012B2 (ja) * | 2000-09-21 | 2006-07-05 | 松下電器産業株式会社 | 負荷駆動装置 |
JP4219567B2 (ja) | 2001-04-03 | 2009-02-04 | 三菱電機株式会社 | 半導体装置 |
JP4295928B2 (ja) * | 2001-05-28 | 2009-07-15 | 三菱電機株式会社 | 半導体保護回路 |
US7132868B2 (en) * | 2001-06-27 | 2006-11-07 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device |
DE10154763A1 (de) | 2001-11-09 | 2003-05-22 | Continental Teves Ag & Co Ohg | Verfahren und Schaltungsanordnung zur Erkennung eines Defekts von Halbleiterschaltelementen und deren Verwendung in elektronischen Bremskraft- und Fahrdynamikreglern |
US6597553B2 (en) * | 2001-12-18 | 2003-07-22 | Honeywell International Inc. | Short circuit protection for a high or low side driver with low impact to driver performance |
CA2385434C (en) * | 2002-04-01 | 2012-11-27 | S&C Electric Company | Control arrangement for power electronic system |
JP2004312924A (ja) * | 2003-04-09 | 2004-11-04 | Mitsubishi Electric Corp | 半導体デバイスの駆動回路 |
US7372685B2 (en) * | 2003-05-20 | 2008-05-13 | On Semiconductor | Multi-fault protected high side switch with current sense |
JP4211741B2 (ja) * | 2005-01-27 | 2009-01-21 | 株式会社デンソー | 出力カットオフ回路 |
DE102005045099B4 (de) * | 2005-09-21 | 2011-05-05 | Infineon Technologies Ag | Entsättigungsschaltung mit einem IGBT |
ITVA20060001A1 (it) * | 2006-01-04 | 2007-07-05 | St Microelectronics Srl | Metodo per generare un segnale rappresentativo della corrente erogata ad un carico da un dispositvo di potenza e relativo dispositivo di potenza |
JP2007288356A (ja) * | 2006-04-13 | 2007-11-01 | Auto Network Gijutsu Kenkyusho:Kk | 電力供給制御装置 |
JP4963891B2 (ja) * | 2006-08-01 | 2012-06-27 | ローム株式会社 | 負荷駆動回路 |
JP4925763B2 (ja) * | 2006-08-01 | 2012-05-09 | 三菱電機株式会社 | 半導体モジュール |
JP4752811B2 (ja) * | 2007-06-06 | 2011-08-17 | 日産自動車株式会社 | 電圧駆動型素子の駆動回路 |
DE102008045410B4 (de) * | 2007-09-05 | 2019-07-11 | Denso Corporation | Halbleitervorrichtung mit IGBT mit eingebauter Diode und Halbleitervorrichtung mit DMOS mit eingebauter Diode |
FR2941338B1 (fr) * | 2009-01-20 | 2016-11-04 | Crouzet Automatismes | Commutateur statique haute tension |
JP5223758B2 (ja) * | 2009-04-06 | 2013-06-26 | 株式会社デンソー | 電力変換回路の駆動回路 |
JP5747445B2 (ja) * | 2009-05-13 | 2015-07-15 | 富士電機株式会社 | ゲート駆動装置 |
JP5115829B2 (ja) * | 2010-06-09 | 2013-01-09 | 株式会社デンソー | スイッチング装置 |
JP5678498B2 (ja) * | 2010-07-15 | 2015-03-04 | 富士電機株式会社 | 電力用半導体素子のゲート駆動回路 |
US8674727B2 (en) * | 2010-08-31 | 2014-03-18 | Infineon Technologies Austria Ag | Circuit and method for driving a transistor component based on a load condition |
JP5675245B2 (ja) * | 2010-09-21 | 2015-02-25 | 矢崎総業株式会社 | 負荷駆動装置 |
JP5724281B2 (ja) * | 2010-10-08 | 2015-05-27 | 富士電機株式会社 | パワー半導体デバイスの電流検出回路 |
JP2012090435A (ja) * | 2010-10-20 | 2012-05-10 | Mitsubishi Electric Corp | 駆動回路及びこれを備える半導体装置 |
JP5146555B2 (ja) * | 2011-02-28 | 2013-02-20 | 株式会社デンソー | スイッチング素子の駆動回路 |
JP5430608B2 (ja) * | 2011-04-27 | 2014-03-05 | カルソニックカンセイ株式会社 | 半導体スイッチング素子駆動回路 |
CN102905413B (zh) * | 2011-07-26 | 2014-11-05 | 桦晶科技股份有限公司 | 驱动高电压发光二极管灯泡的集成电路 |
US8760218B2 (en) | 2012-05-07 | 2014-06-24 | General Electric Company | System and method for operating an electric power converter |
JP5930954B2 (ja) * | 2012-12-14 | 2016-06-08 | 三菱電機株式会社 | パワーモジュール |
WO2014098674A1 (en) * | 2012-12-20 | 2014-06-26 | Telefonaktiebolaget L M Ericsson (Publ) | Method and apparatus relating to surge protection |
JP6104660B2 (ja) * | 2013-03-21 | 2017-03-29 | 本田技研工業株式会社 | 短絡電流保護装置 |
US9843181B2 (en) * | 2013-07-25 | 2017-12-12 | Infineon Technologies Austria Ag | Semiconductor device including a control circuit |
JP6353648B2 (ja) * | 2013-12-10 | 2018-07-04 | 矢崎総業株式会社 | 半導体異常検出回路 |
DE102014201584A1 (de) | 2014-01-29 | 2015-07-30 | Robert Bosch Gmbh | Halbleiterschalter und Verfahren zum Bestimmen eines Stroms durch einen Halbleiterschalter |
DE102014202610A1 (de) | 2014-02-13 | 2015-08-13 | Robert Bosch Gmbh | Stromdetektionseinrichtung und Verfahren zum Erfassen eines elektrischen Stroms |
JP6520102B2 (ja) | 2014-12-17 | 2019-05-29 | 富士電機株式会社 | 半導体装置および電流制限方法 |
US9750328B2 (en) * | 2015-06-23 | 2017-09-05 | The North Face Apparel Corp. | Fastener systems |
US10205313B2 (en) | 2015-07-24 | 2019-02-12 | Symptote Technologies, LLC | Two-transistor devices for protecting circuits from sustained overcurrent |
EP3353870B1 (de) | 2015-09-21 | 2023-06-07 | Symptote Technologies LLC | Ein-transistor-vorrichtungen zum schutz von schaltungen und autokatalytische spannungsumwandlung dafür |
JP6544260B2 (ja) * | 2016-02-15 | 2019-07-17 | 株式会社デンソー | 電力変換装置 |
JP6961944B2 (ja) * | 2017-01-18 | 2021-11-05 | 富士電機株式会社 | パワー半導体モジュール |
CN110337784B (zh) * | 2017-02-28 | 2023-06-09 | 三菱电机株式会社 | 半导体装置及电力转换系统 |
US10432186B2 (en) * | 2017-11-14 | 2019-10-01 | Ford Global Technologies, Llc | Variable resistance power switch feedback |
JP6879188B2 (ja) * | 2017-12-19 | 2021-06-02 | トヨタ自動車株式会社 | 駆動装置の異常判定装置 |
US10848053B2 (en) * | 2018-07-13 | 2020-11-24 | Kohler Co. | Robust inverter topology |
US10756532B2 (en) | 2018-07-13 | 2020-08-25 | Kohler Co. | Ground fault minimization |
JP7087869B2 (ja) * | 2018-09-18 | 2022-06-21 | 株式会社デンソー | 電力変換装置 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2635929A1 (fr) * | 1988-09-01 | 1990-03-02 | Fuji Electric Co Ltd | Dispositif a semi-conducteur possedant un circuit de protection contre les courts-circuits |
EP0467681A2 (de) * | 1990-07-19 | 1992-01-22 | Fuji Electric Co., Ltd. | Treiberschaltung für einen Bipolartransistor mit isoliertem Gate mit Stromsonde |
US5091664A (en) * | 1989-04-07 | 1992-02-25 | Fuji Electric Co., Ltd. | Insulated gate bipolar transistor circuit with overcurrent protection |
EP0561386A1 (de) * | 1992-03-18 | 1993-09-22 | Fuji Electric Co., Ltd. | Halbleiteranordnung |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2375722A1 (fr) * | 1976-12-21 | 1978-07-21 | Thomson Csf | Element logique a faible consommation |
US4577125A (en) * | 1983-12-22 | 1986-03-18 | Advanced Micro Devices, Inc. | Output voltage driver with transient active pull-down |
US5061863A (en) * | 1989-05-16 | 1991-10-29 | Kabushiki Kaisha Toyoda Jidoshokki Seisakusho | Transistor provided with a current detecting function |
-
1992
- 1992-11-25 JP JP04313825A patent/JP3084982B2/ja not_active Expired - Fee Related
-
1993
- 1993-11-23 EP EP93309339A patent/EP0599605A3/de not_active Withdrawn
- 1993-11-23 US US08/156,585 patent/US5396117A/en not_active Expired - Lifetime
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2635929A1 (fr) * | 1988-09-01 | 1990-03-02 | Fuji Electric Co Ltd | Dispositif a semi-conducteur possedant un circuit de protection contre les courts-circuits |
US5091664A (en) * | 1989-04-07 | 1992-02-25 | Fuji Electric Co., Ltd. | Insulated gate bipolar transistor circuit with overcurrent protection |
EP0467681A2 (de) * | 1990-07-19 | 1992-01-22 | Fuji Electric Co., Ltd. | Treiberschaltung für einen Bipolartransistor mit isoliertem Gate mit Stromsonde |
EP0561386A1 (de) * | 1992-03-18 | 1993-09-22 | Fuji Electric Co., Ltd. | Halbleiteranordnung |
Non-Patent Citations (1)
Title |
---|
H. MIYAZAKI ET. AL.: "A NOVEL HIGH VOLTAGE THREE PHASE MONOLITHIC INVERTER IC WITH TWO CURRENT LEVELS SENSING", 3RD INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS, 22 April 1991 (1991-04-22), BALTIMORE,US, pages 248 - 253, XP010044349, DOI: doi:10.1109/ISPSD.1991.146110 * |
Also Published As
Publication number | Publication date |
---|---|
US5396117A (en) | 1995-03-07 |
EP0599605A2 (de) | 1994-06-01 |
JP3084982B2 (ja) | 2000-09-04 |
JPH06164344A (ja) | 1994-06-10 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP0599605A3 (de) | Halbleitervorrichtung mit Stropfühlerfunktion. | |
GB2269935B (en) | Semiconductor device | |
TW371512U (en) | Semiconductor device | |
EP0689243A3 (de) | Halbleiteranordnungzusammenbau | |
ZA929335B (en) | Device. | |
EP0564204A3 (en) | Semiconductor device | |
EP0607700A3 (de) | Halbleiterlaservorrichtung. | |
EP0594441A3 (en) | Semiconductor device | |
SG43018A1 (en) | Semiconductor device | |
EP0588300A3 (de) | Halbleitertransistor. | |
KR960012648B1 (en) | Resin-seal type semiconductor device | |
EP0608051A3 (en) | Resin-sealed semiconductor device. | |
AU659002B2 (en) | Semiconductor device | |
EP0653785A3 (de) | Dielektrisch isolierte Halbleiteranordnung. | |
EP0591900A3 (de) | In Harz versiegeltes Halbleiterbauelement. | |
GB2285175B (en) | Semiconductor device | |
GR3021407T3 (en) | Drop-producing device. | |
KR970006537B1 (en) | Semiconductor device | |
GB2267996B (en) | Semiconductor device | |
EP0730347A3 (de) | Halbleitervorrichtung | |
AU3393493A (en) | Semiconductor device | |
GB2274203B (en) | Semiconductor device | |
EP0554456A4 (de) | Faksimilepostvorrichtung. | |
EP0635852A3 (de) | Keramik-Halbleiterbauelement. | |
EP0641024A3 (de) | Leistungshalbleiterbauelement. |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
|
AK | Designated contracting states |
Kind code of ref document: A2 Designated state(s): DE FR GB |
|
17P | Request for examination filed |
Effective date: 19940426 |
|
PUAL | Search report despatched |
Free format text: ORIGINAL CODE: 0009013 |
|
AK | Designated contracting states |
Kind code of ref document: A3 Designated state(s): DE FR GB |
|
17Q | First examination report despatched |
Effective date: 19960318 |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN |
|
18D | Application deemed to be withdrawn |
Effective date: 19960730 |