EP0588992A1 - Vorrichtung zur plasmaunterstützten bearbeitung von substraten. - Google Patents
Vorrichtung zur plasmaunterstützten bearbeitung von substraten.Info
- Publication number
- EP0588992A1 EP0588992A1 EP93900014A EP93900014A EP0588992A1 EP 0588992 A1 EP0588992 A1 EP 0588992A1 EP 93900014 A EP93900014 A EP 93900014A EP 93900014 A EP93900014 A EP 93900014A EP 0588992 A1 EP0588992 A1 EP 0588992A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- plasma
- substrate
- ion
- current densities
- ions
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32422—Arrangement for selecting ions or species in the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3266—Magnetic control means
Definitions
- the invention relates to a device for plasma-assisted processing of substrates, with a recipient in which ions and reactive neutral particles (radicals) formed in the plasma act on the substrate.
- Such devices for plasma-assisted machining are used both for removing and for applying material from or to semiconductor, metal, glass or plastic substrates.
- the machining process carried out in such devices is based on a combined attack of the ions formed in the plasma and the reactive neutral particles (radicals). While the neutral particles hit the substrate (wafer) essentially at thermal speed and with an isotropic directional distribution, the ions reach the wafer with relatively high kinetic energy and a strong preferred orientation.
- the magnetic fields are used with the aim of keeping the electrons in the plasma as long as possible and thus increasing their density and probability of impact. In this way, an increase in ion production and a certain increase in radical production are achieved. Furthermore, the magnetic fields can be used to control the volume of the plasma in the recipient such that only the reactive neutral particles formed in the plasma can reach the substrate.
- the invention is based on the object of specifying a device for plasma-assisted processing of substrates, with a recipient in which ions and reactive neutral particles (radicals) acting in the plasma act on the substrate, in which the ion and radical current densities largely are independently adjustable.
- a device for plasma-assisted processing of substrates is therefore further developed in that means for varying the plasma volume to control the absolute values of the ion and radical current densities and to control the relative ratios of ion to radical current densities on the surface of the substrate are provided.
- the invention is based on the basic idea of setting the individual current densities through a targeted variation of the plasma volume, for example through the use of certain magnetic field configurations or the recipient geometry.
- the device according to the invention thus enables an increase in the absolute current densities of ions and radicals (chemically reactive neutral particles) and a controlled adjustment of the current ratios r.
- FIG. 1 shows a longitudinal section through a generic device for explaining the principles underlying the invention
- FIGS. 2a to 2c variants of a first embodiment FIG. 3 shows a second embodiment
- FIG. 4 shows a third embodiment
- FIG. 5a and FIG. 5b an explanation of the operating modes possible with a device according to the invention.
- a device for plasma-assisted processing of substrates into a recipient 1 which can be, for example, a cylindrical chamber with the inner height h "and the diameter d" to explain the basic principles according to the invention.
- An electrode K (cathode) is arranged in the recipient 1 and is connected to a high-frequency power source 3 via a matching network 2.
- A denotes a counter electrode (anode), which is connected to the reference potential, and Sb denotes the substrate to be processed.
- both the plasma volume and the current densities j of the ions and radicals are generally set in the direction of the substrate Sb, depending on the choice of process conditions (for example reactor geometry, process pressure) , Gas flow, coupled power) more or less automatically.
- equation 1 yields the following equation at a constant production rate P in the plasma volume V, if the losses in the volume are initially neglected
- a ra is an effective loss surface, which depends on the geometry and material properties of the chamber as well as on the pump power.
- the current ratios change like the ratios of the plasma surface responsible for the removal of the ions.
- the plasma is constricted, which in the best case is limited to the area of the electrodes K and A, the total ion current on the substrate surface increases as a result of the increase in power density and the reduced wall losses with constant overall power.
- the radical current density does not increase to the same extent.
- Total surface area which is indicated by the chamber walls and the substrate surface and the AA and the reduced loss surface area for the ions.
- devices for plasma-assisted processing of substrates are to be described in which, depending on the application or the desired ratio of ion to radical current densities, certain plasma volumes or surfaces are realized by suitable magnetic field / recipient configurations.
- FIG. 2a to 2c show variants of a first exemplary embodiment in which the proportion of positive ion current densities is increased.
- magnetic fields are provided which are generated by electromagnets Sp (FIG. 2a) or by permanent magnets lying opposite one another.
- This configuration can be used with particular advantage if the proportion of ion-induced surface processes is to be increased, as is the case e.g. is the case with the anisotropic structure transfer (etching) or the ion-induced deposition etc.
- the effect of the magnetic field (B field) caused by the magnets Sp is as follows:
- the electron diffusion perpendicular to the B field lines is limited, so that the positive ions also emerge with reduced current densities in this direction.
- the electrons and thus also the ions are kept in the reduced volume V when the B fields are sufficiently high.
- V By varying the magnetic field B, for example by changing the coil currents or the permanent magnet arrangement used, V and thus the ratio r of ion to radical current densities can be set.
- the maximum settable current density ratios r are - as already stated - determined by the substrate surfaces.
- the constriction of the plasma is achieved in the exemplary embodiment shown in FIG. 2a by coils Sp arranged concentrically to the electrodes K and A. If one uses e.g. Coils in Helmholtz configuration, so you get a homogeneous B-field distribution in the entire plasma area.
- the magnetic field lines are perpendicular to the electrode (substrate) surface. This hinders the radial diffusion.
- the plasma volume can be changed.
- FIG. 2b shows, the same result can also be achieved, for example, by permanent magnets N and S and / or coils Sp integrated in the electrodes, which are concentric to the axis shown, with magnetic field lines as shown.
- the basic structure of the variant shown in FIG. 2b is similar to that in FIG. 2a. The difference is that there is no need for a specially shaped counterelectrode A.
- the entire chamber 1 serves as a counter electrode.
- the minimum adjustable plasma volume is determined by the effective range of the magnetic field, which can be varied, for example, when using magnetic field coils SP by their diameter - or by the diameter d 2 of the permanent magnets N and S.
- FIG. 2c shows that in addition to the structure shown in FIGS. 2a and 2b, magnetic fields can be used which run parallel to the surface of the substrate Sb. As a result, the electron and thus also the ion movement on the substrate can be additionally influenced.
- DE 39 13 463 AI also addresses the use of magnetic fields, which are approximately parallel can run to the surface of the substrate. In the exemplary embodiment shown in FIG. 2c, however, the magnetic field encloses the electrodes and in particular the cathode K. In this way, the electron movement in the cathode dark space and thus the DC soap bias can also be influenced:
- the diameters of the coils Sp used in FIGS. 2a and 2c can be varied within wide ranges.
- the coil diameters can e.g. be very much larger than the dimensions of the chamber 1.
- the plasma constriction increases the relative radical current density, ie the relative current density of the reactive neutral particles.
- the magnetic field lines run parallel to the surface of the substrate Sb, so that the ion current densities to the substrate are reduced.
- the relatively increasing proportion of radicals promotes the purely chemical component in surface processing, for example for the generation of isotropic etching profiles, for the thermal deposition (deposition) of layers on the substrate, etc.
- the power is fed in outside the substrate electrode by a laterally attached electrode E.
- a laterally attached electrode E By introducing a variable magnetic field, the mobility of electrons in the direction of the substrate Sb and thus the ion currents on the substrate can be reduced.
- the ion current densities can thus be adjusted continuously.
- the ion current onto the substrate can be completely suppressed, so that only neutral particles can reach the substrate.
- Fig. 4 shows another embodiment, which is a combination of the first and second embodiments. This allows a greater range of variation in the process control from ion to neutral particle-dominated surface treatment.
- the power can be coupled in via the substrate electrode K or via a laterally attached electrode E.
- a switchover of the power coupling or a division between the two electrodes is also possible.
- variable electrode spacings can also have an additional influence on the plasma properties.
- the loss surface Ar for the radicals can also be changed. This will e.g. achieved by the use of a liner on the chamber walls which, by selecting the suitable material (high consumption rates for special radicals) leads to an additional increase in the effective radical loss surface area A and thus to a further increase in a.
- a further increase in the loss area A can be achieved, for example, by a corresponding geometrical shape (for example lamella structure in the case of a radiator or corrugated surface, etc.) b) Because the plasma is held between the electrodes when using a B field, an increase in the power densities is achieved with constant uncoupled power. A significant increase in the ionization rates (ion densities) can thus be achieved, particularly with small electrode spacings.
- Variable electrode spacings are known in principle.
- the combination with the B field provided according to the invention makes it possible to enclose the plasma even at low pressures and high powers in the electrode area.
- Electrodes connected to a high-frequency power source result in a further new operating mode, which is to be further explained in connection with FIGS. 5a and 5b:
- the plasma burns between the pair of electrodes 1, the B-field axis being perpendicular to the electrode Kl. If the distance from the plasma is sufficient, the wafer arranged on the electrode K2 is exposed to only a radical current in a first step; in this case the electrode K2 is not powered, so that the coil field with an axis perpendicular to K2 is switched off.
- the electrode K2 can be switched on in a second cut. Depending on the power applied to K2, ions can thus additionally be drawn onto the substrate; the coil field with axis perpendicular to K2 can be switched on or off or varied.
- the cathode K1 can, for example, continue to be powered or switched off. It is possible to switch between the different operating modes with practically any frequency.
- the arbitrary switching options for the coil fields, cathode powers and cathode distances open up a whole series of different operating modes in a single system.
- the electrode K2 can also be shifted to switch between the "radical” and “switch” operating states, while in the exemplary embodiment shown in FIG. 5b the counterelectrode A is moved to reduce the plasma volume and the Electrode Kl is switched off.
- the switch electrode can also be powered.
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
Description
Claims
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE4118973 | 1991-06-08 | ||
DE4118973A DE4118973C2 (de) | 1991-06-08 | 1991-06-08 | Vorrichtung zur plasmaunterstützten Bearbeitung von Substraten und Verwendung dieser Vorrichtung |
PCT/DE1992/000471 WO1992022920A1 (de) | 1991-06-08 | 1992-06-09 | Vorrichtung zur plasmaunterstützten bearbeitung von substraten |
Publications (2)
Publication Number | Publication Date |
---|---|
EP0588992A1 true EP0588992A1 (de) | 1994-03-30 |
EP0588992B1 EP0588992B1 (de) | 1997-04-16 |
Family
ID=6433558
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP93900014A Expired - Lifetime EP0588992B1 (de) | 1991-06-08 | 1992-06-09 | Vorrichtung zur plasmaunterstützten bearbeitung von substraten |
Country Status (5)
Country | Link |
---|---|
US (1) | US5527394A (de) |
EP (1) | EP0588992B1 (de) |
JP (1) | JPH06507675A (de) |
DE (2) | DE4118973C2 (de) |
WO (1) | WO1992022920A1 (de) |
Families Citing this family (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5695597A (en) * | 1992-11-11 | 1997-12-09 | Mitsubishi Denki Kabushiki Kaisha | Plasma reaction apparatus |
US5391281A (en) * | 1993-04-09 | 1995-02-21 | Materials Research Corp. | Plasma shaping plug for control of sputter etching |
US6475333B1 (en) * | 1993-07-26 | 2002-11-05 | Nihon Shinku Gijutsu Kabushiki Kaisha | Discharge plasma processing device |
DE4342827C2 (de) * | 1993-12-15 | 1997-09-18 | Mitsubishi Electric Corp | Plasmareaktionsvorrichtung |
DE4345261C2 (de) * | 1993-12-15 | 1997-02-27 | Mitsubishi Electric Corp | Plasmareaktionsvorrichtung |
US6375860B1 (en) * | 1995-03-10 | 2002-04-23 | General Atomics | Controlled potential plasma source |
EP0743671A3 (de) * | 1995-05-19 | 1997-07-16 | Hitachi Ltd | Verfahren und Vorrichtung für einer Plasmabearbeitungsgerät |
DE19532100A1 (de) * | 1995-08-30 | 1997-03-06 | Leybold Ag | Vorrichtung zur Plasmabehandlung von Substraten |
US6902683B1 (en) * | 1996-03-01 | 2005-06-07 | Hitachi, Ltd. | Plasma processing apparatus and plasma processing method |
JPH09283300A (ja) * | 1996-04-18 | 1997-10-31 | Sony Corp | プラズマ処理装置 |
DE69719108D1 (de) * | 1996-05-02 | 2003-03-27 | Tokyo Electron Ltd | Plasmabehandlungsgerät |
US5868897A (en) * | 1996-07-31 | 1999-02-09 | Toyo Technologies, Inc. | Device and method for processing a plasma to alter the surface of a substrate using neutrals |
JP2000026975A (ja) * | 1998-07-09 | 2000-01-25 | Komatsu Ltd | 表面処理装置 |
KR100829288B1 (ko) * | 1998-12-11 | 2008-05-13 | 서페이스 테크놀로지 시스템스 피엘씨 | 플라즈마 처리장치 |
US8114245B2 (en) * | 1999-11-26 | 2012-02-14 | Tadahiro Ohmi | Plasma etching device |
US8048806B2 (en) | 2000-03-17 | 2011-11-01 | Applied Materials, Inc. | Methods to avoid unstable plasma states during a process transition |
US8617351B2 (en) | 2002-07-09 | 2013-12-31 | Applied Materials, Inc. | Plasma reactor with minimal D.C. coils for cusp, solenoid and mirror fields for plasma uniformity and device damage reduction |
US20020185226A1 (en) * | 2000-08-10 | 2002-12-12 | Lea Leslie Michael | Plasma processing apparatus |
KR100382720B1 (ko) * | 2000-08-30 | 2003-05-09 | 삼성전자주식회사 | 반도체 식각 장치 및 이를 이용한 반도체 소자의 식각 방법 |
JP4339597B2 (ja) | 2001-04-20 | 2009-10-07 | ジェネラル・プラズマ・インコーポレーテッド | ダイポールイオン源 |
US7294283B2 (en) * | 2001-04-20 | 2007-11-13 | Applied Process Technologies, Inc. | Penning discharge plasma source |
JP3823069B2 (ja) * | 2002-06-12 | 2006-09-20 | 株式会社アルバック | 磁気中性線放電プラズマ処理装置 |
TWI283899B (en) * | 2002-07-09 | 2007-07-11 | Applied Materials Inc | Capacitively coupled plasma reactor with magnetic plasma control |
WO2004022238A2 (en) * | 2002-09-09 | 2004-03-18 | Oster Magnetics, Inc. | Apparatus for manipulating magnetic fields |
US8158016B2 (en) * | 2004-02-04 | 2012-04-17 | Veeco Instruments, Inc. | Methods of operating an electromagnet of an ion source |
US7557362B2 (en) | 2004-02-04 | 2009-07-07 | Veeco Instruments Inc. | Ion sources and methods for generating an ion beam with a controllable ion current density distribution |
WO2004088710A2 (en) * | 2003-04-02 | 2004-10-14 | Nkt Research & Innovation A/S | Method and apparatus for gas plasma treatment with controlled extent of gas plasma, and use thereof |
DE10331926A1 (de) * | 2003-07-15 | 2005-02-24 | Leybold Optics Gmbh | Hochfrequenzquelle zur Erzeugung eines durch Magnetfelder geformten Plasmastrahls und Verfahren zum Bestrahlen einer Oberfläche |
US7932678B2 (en) | 2003-09-12 | 2011-04-26 | General Plasma, Inc. | Magnetic mirror plasma source and method using same |
US20060061443A1 (en) * | 2003-10-14 | 2006-03-23 | Oster Magnetics, Inc. | Apparatus for manipulating magnetic fields |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4668365A (en) * | 1984-10-25 | 1987-05-26 | Applied Materials, Inc. | Apparatus and method for magnetron-enhanced plasma-assisted chemical vapor deposition |
US4668338A (en) * | 1985-12-30 | 1987-05-26 | Applied Materials, Inc. | Magnetron-enhanced plasma etching process |
DE3801205C1 (en) * | 1988-01-18 | 1989-03-23 | Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung Ev, 8000 Muenchen, De | Device for ion etching of substrates with the support of a magnetic field |
JPH0227718A (ja) * | 1988-07-15 | 1990-01-30 | Mitsubishi Electric Corp | プラズマ処理方法およびそれに用いるプラズマ処理装置 |
US5225024A (en) * | 1989-05-08 | 1993-07-06 | Applied Materials, Inc. | Magnetically enhanced plasma reactor system for semiconductor processing |
US5312778A (en) * | 1989-10-03 | 1994-05-17 | Applied Materials, Inc. | Method for plasma processing using magnetically enhanced plasma chemical vapor deposition |
JP3033104B2 (ja) * | 1989-11-17 | 2000-04-17 | ソニー株式会社 | エッチング方法 |
JPH03203317A (ja) * | 1989-12-29 | 1991-09-05 | Matsushita Electric Ind Co Ltd | プラズマ処理装置 |
US5228940A (en) * | 1990-10-03 | 1993-07-20 | Mitsubishi Denki Kabushiki Kaisha | Fine pattern forming apparatus |
US5252178A (en) * | 1992-06-24 | 1993-10-12 | Texas Instruments Incorporated | Multi-zone plasma processing method and apparatus |
-
1991
- 1991-06-08 DE DE4118973A patent/DE4118973C2/de not_active Expired - Fee Related
-
1992
- 1992-06-09 EP EP93900014A patent/EP0588992B1/de not_active Expired - Lifetime
- 1992-06-09 US US08/157,194 patent/US5527394A/en not_active Expired - Fee Related
- 1992-06-09 DE DE59208363T patent/DE59208363D1/de not_active Expired - Fee Related
- 1992-06-09 JP JP4510103A patent/JPH06507675A/ja active Pending
- 1992-06-09 WO PCT/DE1992/000471 patent/WO1992022920A1/de active IP Right Grant
Non-Patent Citations (1)
Title |
---|
See references of WO9222920A1 * |
Also Published As
Publication number | Publication date |
---|---|
WO1992022920A1 (de) | 1992-12-23 |
EP0588992B1 (de) | 1997-04-16 |
JPH06507675A (ja) | 1994-09-01 |
DE4118973C2 (de) | 1999-02-04 |
DE59208363D1 (de) | 1997-05-22 |
DE4118973A1 (de) | 1992-12-10 |
US5527394A (en) | 1996-06-18 |
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