EP0542475A1 - Procédé de liaison utilisant une soudure composée de couches alternantes multiples d'or et d'étain - Google Patents

Procédé de liaison utilisant une soudure composée de couches alternantes multiples d'or et d'étain Download PDF

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Publication number
EP0542475A1
EP0542475A1 EP92310145A EP92310145A EP0542475A1 EP 0542475 A1 EP0542475 A1 EP 0542475A1 EP 92310145 A EP92310145 A EP 92310145A EP 92310145 A EP92310145 A EP 92310145A EP 0542475 A1 EP0542475 A1 EP 0542475A1
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EP
European Patent Office
Prior art keywords
layer
gold
tin
solder
layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP92310145A
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German (de)
English (en)
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EP0542475B1 (fr
Inventor
Avishay Katz
Chien-Hsun Lee
King Lien Tai
Yiu-Man Wong
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
American Telephone and Telegraph Co Inc
AT&T Corp
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Publication of EP0542475A1 publication Critical patent/EP0542475A1/fr
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/001—Interlayers, transition pieces for metallurgical bonding of workpieces
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    • Y10T428/12715—Next to Group IB metal-base component

Definitions

  • This invention relates to bonding methods, and more particularly to methods for bonding devices that generate heat during subsequent operation such as semiconductor laser devices.
  • a semiconductor laser device i.e., when it is generating optical radiation, it also generates relatively large amounts of heat that must be quickly and efficiently conducted away from the device, lest its temperature rise to an undesirable level and its useful device lifetime be undesirably reduced.
  • U.S. Patent No. 4,772,935 teaches a process for thermal-compression bonding of a silicon integrated circuit due to a package comprising a header.
  • the process utilizes sequential formation on a major surface of a silicon wafer (substrate), prior to its being cut into a plurality of dies, the following successive layers: (1) an adhesion layer of titanium; (2) a barrier layer, preferably of tungsten; (3) a bonding layer, preferably of gold. Also, a stress-relieving layer, preferably of gold, can be formed earlier between the adhesion layer of tungsten and the major surface of the wafer. Thereafter, the substrate is cut into the plurality of dies, each of which is bonded, for example, to a ceramic header ("submount").
  • a major surface of the header Prior to the die's being bonded to the header, a major surface of the header is coated with a layer of gold that, in turn, is coated with a binding layer of solder, preferably a gold-tin eutectic.
  • the purpose of the adhesion layer is to promote adhesion of the tungsten barrier layer to the substrate.
  • the purpose of the barrier layer is to suppress migration of silicon from the substrate into the originally eutectic binding layer of solder, such migration causing an undesirable increase in the melting temperature of the binding layer of solder and hence a required undesirably high temperature rise in the wafer during the thermal-compression bonding process in which the binding layer of solder must be melted to wet the surface to be bonded.
  • the purpose of the bonding layer of gold is to protect the barrier layer from oxidation that would weaken the resulting bond.
  • the thickness of the binding layer of solder was reported to be 0.5 to 1.0 mil, or 12.7 to 25.4 ⁇ m. Such a relatively large thickness, regardless of relatively small thicknesses of other layers, is not desirable in the context of relatively high power (over 100 milliwatt) lasers, because of the need of a significantly higher thermal conductance and hence significantly smaller thickness of the entire resulting bond between laser and submount.
  • a gold-tin solder layer is made desirably thin from the standpoint of good and sufficient thermal conductance--i.e., about 4 ⁇ m or less--then surface regions of the solder suffer from premature freezing (solidification) during the bonding process when heat is applied in quantities sufficient to raise the temperature of the solder above its melting temperature, namely above 280°C in cases where the gold-tin solder has a eutectic composition (gold: 80 per centum by weight; tin: 20 per centum by weight) and hence a desirable minimum melting temperature.
  • gold-tin solder is preferred over other solders--such as indium, lead-tin, tin-lead, tin-indium, lead-indium-silver--because of its relatively high Young's modulus of elasticity and hence its resulting mechanically more stable (rigide) bond.
  • bonds made from gold-tin solder tend to have desirably lower creep, such lower creep being associated with the relatively high melting temperature (280°C or more) of a gold-tin solder.
  • gold-indium solder has too high a melting temperature (about 457°C) for bonding lasers, because such a high temperature tends to injure the laser during bonding.
  • FIG. 1 is an elevational cross-sectional view of a bonding method in accordance with a specific embodiment of the invention.
  • a semiconductor laser structure 10 typically InP-based, has a bottom contact electrode layer 10.5, typically a gold-germanium alloy having a thickness of about 0.015 ⁇ m whereby a semiconductor laser device 100 is formed.
  • an adhesion layer 11 typically a titanium layer having a thickness in the approximate range of 0.05 to 0. 10 ⁇ m.
  • a barrier layer 12 typically a platinum layer having a thickness in the approximate range of 0.05 to 0. 10 ⁇ m.
  • a binder layer 13 of gold having a thickness of typically about 0.5 ⁇ m.
  • a submount 20 is to be attached by metallic solder or epoxy to a stud of copper or to a ceramic board (not shown) after the bonding procedure has been performed.
  • This submount 20 typically is made of silicon, ceramic, or low pressure chemically vapor deposited (LPCVD) diamond.
  • LPCVD low pressure chemically vapor deposited
  • the submount 20 has a thickness of about 250 ⁇ m.
  • a barrier layer 22 typically nickel having a thickness of about 0.30 ⁇ m.
  • nickel other materials such as tungsten, chromium, ruthenium, or molybdenum can also be used for the barrier layer 22.
  • solder composite layer 23 composed of multiple alternating layers 23.1, 23.2, ... 23.11 of gold and tin, starting with a bottom layer 23.1 and ending with a top layer 23.11, both of gold.
  • 23.11 typically are respectively equal to approximately 0.400 ⁇ m of gold, 0.200 ⁇ m of tin, 0.250 ⁇ m of gold, 0.300 ⁇ m of tin, 0.325 ⁇ m of gold, 0.300 ⁇ m of tin, 0.375 ⁇ m of gold, 0.350 ⁇ m of tin, 0.250 ⁇ m of gold, 0.350 ⁇ m of tin, and 0.100 ⁇ m of gold--a total of eleven alternating layers.
  • the total thickness of gold is thus equal to 1.70 ⁇ m; of tin 1.50 ⁇ m; for a total of 3.20 ⁇ m--that is, containing tin in an amount of 25 per centum by weight (a eutectic containing tin in an amount of about 20 per centum by weight)--whereby the composite layer 23 on the overall average has a tin-rich (gold-poor) near-eutectic composition. If the bottom layer of the solder composite layer 23 is tin instead of gold, the top layer always being gold, then there are an even number of layers in the composite layer instead of an odd number of layers.
  • the thicknesses of the alternating tin and gold layers are (going from bottom to top) respectively equal to 0.200 ⁇ m of tin, 0.650 ⁇ m of gold, 0.300 ⁇ m of tin, 0.325 ⁇ m of gold, 0.300 ⁇ m of tin, 0.375 ⁇ m of gold, 0.350 ⁇ m of tin, 0.250 ⁇ m of gold, 0.350 ⁇ m of tin, and 0. 100 ⁇ m of gold--a total of ten alternating layers.
  • the total thickness of gold is again equal to 1.70 ⁇ m, and the total thickness of the tin is again equal to 1.50 ⁇ m, whereby the solder composite layer 23 is again a 3.20 ⁇ m thick tin-rich eutectic (averaged over its entire thickness).
  • This thickness when added to the thicknesses of the barrier and adhesion layers 22 and 21, amounts to a total thickness of only 3.60 ⁇ m.
  • the ratio of the thickness of the top layer 23.11 to the thickness of the (next-to-top) layer 23.10--i.e., the layer whose top surface is in immediate physical contact with the bottom surface of the top layer 23.11--is thus 0.100 ⁇ 0.350 0.286, that is, less than 0.3. This ratio also holds in the other example, i.e., where the total number of alternating layers is ten.
  • the top layer 23.11 is advantageously gold in order to protect the underlying tin layer 23.10 from undesirable oxidation, prior to the melting during bonding that would otherwise occur if this tin layer 23.10 were not coated with gold.
  • the layers 11, 12, and 13 can all be formed by successive evaporation or sputtering using suitable metallic targets, as known in the art; and the layers 21, 22, as well as the layers 23.1, 23.2, ..., 23.11, can likewise be formed by conventional evaporation or sputtering.
  • bonding under applied heat and pressure is performed by applying compression forces F--typically amounting to a pressure in the approximate range of 1 to 3 Mega Pascal--to the exposed surfaces of the laser device 100 and of the submount 20, while heating the solder composite layer 23 to a temperature of approximately 320°C for approximately 10 seconds. In this way, the solder composite layer 23 melts and wets the surface of the binder layer 13. After the applied heat and pressure are terminated, a bond is thus formed between the laser device 100 and the submount 20, with the composite layer 23. 1, 23.2, .... 23.11 having melted and fused into a tin-rich gold-tin eutectic.
  • a composite layer in accordance with the composite layer 23 can be used instead of the single layer 13 located on the laser device 10.
  • fewer than a total of ten layers can be used for the composite layer 23: a total of seven to fifteen layers is preferred, but as few as a total of three to six layers is useful.
  • the ratio of the thickness of the top layer 23.11 and the next-to-top layer 23.10 can be as high as about 0.8; and instead of 3.6 ⁇ m--i.e., less than 4 ⁇ m--the total thickness of the composite layer 23 can be as high as 5 ⁇ m.
  • the bottom layer (as well as the top layer) in the composite layer is made of gold, and thus the number of multiple layers that form the composite layer is preferably an odd number.

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Die Bonding (AREA)
  • Semiconductor Lasers (AREA)
EP92310145A 1991-11-15 1992-11-05 Procédé de liaison utilisant une soudure composée de couches alternantes multiples d'or et d'étain Expired - Lifetime EP0542475B1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US792559 1991-11-15
US07/792,559 US5197654A (en) 1991-11-15 1991-11-15 Bonding method using solder composed of multiple alternating gold and tin layers

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EP0542475A1 true EP0542475A1 (fr) 1993-05-19
EP0542475B1 EP0542475B1 (fr) 1997-02-26

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JP (1) JPH0777280B2 (fr)
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HK (1) HK118597A (fr)
SG (1) SG43759A1 (fr)

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EP0911111A2 (fr) * 1997-10-22 1999-04-28 Lucent Technologies Inc. Procédé et compositions pour obtenir une soudure cinétiquement contrÔlée
EP1267421A1 (fr) * 2000-03-01 2002-12-18 Hamamatsu Photonics K.K. Dispositif laser a semi-conducteurs
WO2004042819A1 (fr) * 2002-11-06 2004-05-21 Koninklijke Philips Electronics N.V. Dispositif comprenant des elements de circuit relies par une structure de liaison en forme de bosse
EP2009971A1 (fr) * 2006-04-17 2008-12-31 DOWA Electronics Materials Co., Ltd. Couche de brasage, substrat pour jonction de dispositif utilisant ladite couche, et processus de fabrication du substrat
US8747579B2 (en) 2007-02-27 2014-06-10 Dowa Electronics Materials Co., Ltd. Solder layer and device bonding substrate using the same and method for manufacturing such a substrate

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EP0622837B1 (fr) * 1993-04-27 2000-10-11 Nec Corporation Méthode de fabrication d'un dispositif semi-conducteur
JP3271475B2 (ja) * 1994-08-01 2002-04-02 株式会社デンソー 電気素子の接合材料および接合方法
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Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0911111A2 (fr) * 1997-10-22 1999-04-28 Lucent Technologies Inc. Procédé et compositions pour obtenir une soudure cinétiquement contrÔlée
EP0911111A3 (fr) * 1997-10-22 2003-10-08 Lucent Technologies Inc. Procédé et compositions pour obtenir une soudure cinétiquement contrôlée
EP1267421A1 (fr) * 2000-03-01 2002-12-18 Hamamatsu Photonics K.K. Dispositif laser a semi-conducteurs
EP1267421A4 (fr) * 2000-03-01 2006-03-01 Hamamatsu Photonics Kk Dispositif laser a semi-conducteurs
KR100794097B1 (ko) 2000-03-01 2008-01-10 하마마츠 포토닉스 가부시키가이샤 반도체 레이저 장치
WO2004042819A1 (fr) * 2002-11-06 2004-05-21 Koninklijke Philips Electronics N.V. Dispositif comprenant des elements de circuit relies par une structure de liaison en forme de bosse
EP2009971A1 (fr) * 2006-04-17 2008-12-31 DOWA Electronics Materials Co., Ltd. Couche de brasage, substrat pour jonction de dispositif utilisant ladite couche, et processus de fabrication du substrat
EP2009971A4 (fr) * 2006-04-17 2011-01-12 Dowa Electronics Materials Co Couche de brasage, substrat pour jonction de dispositif utilisant ladite couche, et processus de fabrication du substrat
US8516692B2 (en) 2006-04-17 2013-08-27 Dowa Electronics Materials Co., Ltd. Solder layer, substrate for device joining utilizing the same and method of manufacturing the substrate
US8747579B2 (en) 2007-02-27 2014-06-10 Dowa Electronics Materials Co., Ltd. Solder layer and device bonding substrate using the same and method for manufacturing such a substrate

Also Published As

Publication number Publication date
EP0542475B1 (fr) 1997-02-26
US5197654A (en) 1993-03-30
JPH0669608A (ja) 1994-03-11
CA2080931C (fr) 1994-08-23
CA2080931A1 (fr) 1993-05-16
HK118597A (en) 1997-09-05
JPH0777280B2 (ja) 1995-08-16
DE69217617D1 (de) 1997-04-03
SG43759A1 (en) 1997-11-14
DE69217617T2 (de) 1997-07-17

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