EP0528163B1 - Einrichtung zur Unterdrückung von Lichtbögen - Google Patents

Einrichtung zur Unterdrückung von Lichtbögen Download PDF

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Publication number
EP0528163B1
EP0528163B1 EP92111749A EP92111749A EP0528163B1 EP 0528163 B1 EP0528163 B1 EP 0528163B1 EP 92111749 A EP92111749 A EP 92111749A EP 92111749 A EP92111749 A EP 92111749A EP 0528163 B1 EP0528163 B1 EP 0528163B1
Authority
EP
European Patent Office
Prior art keywords
voltage
plasma
circuit arrangement
value
differential amplifier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
EP92111749A
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German (de)
English (en)
French (fr)
Other versions
EP0528163A1 (de
Inventor
Götz Dipl.-Ing. Teschner
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Balzers und Leybold Deutschland Holding AG
Original Assignee
Leybold AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Leybold AG filed Critical Leybold AG
Publication of EP0528163A1 publication Critical patent/EP0528163A1/de
Application granted granted Critical
Publication of EP0528163B1 publication Critical patent/EP0528163B1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3444—Associated circuits
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H7/00—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/0203—Protection arrangements
    • H01J2237/0206—Extinguishing, preventing or controlling unwanted discharges

Definitions

  • the invention relates to an arc suppression circuit according to the preamble of patent claim 1.
  • a dynamic method for monitoring a measured variable in which the measuring arrangement detects the temporal change in a measured variable, this signal being fed directly and delayed to a differential amplifier. When a predetermined value is exceeded, the resulting voltage difference results in a control signal (see EP-A-95590).
  • This device has two electrodes which are supplied with direct current, and a circuit which interrupts the supply of current when the current exceeds a predetermined value. This circuit is thus activated each time the current is exceeded, so that there is unnecessary interruption in the operation of a plasma chamber.
  • the invention has for its object to provide an improved circuit arrangement for extinguishing arcs in plasma devices.
  • the advantage achieved by the invention is in particular that even when sputtering difficult materials, eg. B. of SiO2, high coating rates are possible because the sputtering process is interrupted only for a very short time.
  • the formation of arcs can be carried out in such a way that after a first voltage drop, the cathode voltage remains at a voltage value of approximately 250 V for several milliseconds. This voltage value is still within the permissible working range of the cathode. The cathode voltage then breaks down to an arc value of 30 V to 50 V. Physically, this intermediate stage is interpreted as the formation of a charge carrier cloud on the cathode. The formation of a complete arc leads to local heating of the cathode surface and thus of the target, which is also referred to as a "hot spot".
  • this "hot spot" In order to further enable sputtering operation, this "hot spot" must have cooled down before the cathode voltage is switched on again, so that it cannot cause any thermal emission of electrons. The earlier an arc is detected and the cathode current is switched off, the less likely it is that there will be any significant heating.
  • an arc can be detected and signaled to a switching device before the current in the arc has increased so much that damage can occur in the target and / or substrate area, such as. B. splashes of material from the target to the substrate or spalling of the target. Since the invention does not monitor fixed limits for current and voltage, but rather the change in voltage over time is checked, a much earlier arc detection is possible.
  • the single figure shows the principle of a sputtering system with the circuitry according to the invention.
  • a vacuum chamber 1 which has a nozzle 2 for evacuating this chamber 1 and a nozzle 3 for the supply of gases, there is a substrate holder 4 on which a substrate 5 is arranged.
  • the substrate 5 consists, for example, of glass or is a plastic film or a silicon wafer from microelectronic production.
  • the Vacuum chamber 1 is preferably made of metal and is grounded.
  • a cathode 6 with a target 7 is arranged opposite the substrate 5.
  • the associated anode 8 is located to the side of the substrate 5.
  • An electrical connection leads from the cathode 6 via a switch 9 and a choke 10 to the negative output of a DC voltage source 11.
  • the positive output of this DC voltage source 11 is connected to the anode 8.
  • a resistor 13 is connected, which is connected to a second resistor 14, which in turn is connected to the anode and the positive output of the voltage source 11.
  • a further resistor 16 which is connected to a first input terminal of a differential amplifier 17, is connected to the connecting line 15 between the two resistors 13, 14.
  • the second input of this differential amplifier is also connected to the connecting line 15 via a resistor 18 and a resistor 19.
  • a capacitor 20 is connected with its one connection to the connecting line between resistor 19 and resistor 18 and with its other connection to the connecting line 21 between the positive output of the voltage source 11 and the anode 8.
  • a resistor 22 is connected to the same connecting line 21, which with is connected to the second input of the differential amplifier 17.
  • the output of the differential amplifier 17 leads via a resistor 23 to an input of a further differential amplifier 24, the further input of which is connected via a resistor 25 to the tap 26 of a potentiometer 27.
  • This potentiometer 27 is on the one hand at the negative connection of a DC voltage source of z. B. 15 V and on the other hand on the line 21.
  • the output of the differential amplifier 17 is fed back via a resistor 28 to the negative input of this amplifier 17.
  • the inductor 10 serves to increase the dynamic internal resistance of the DC voltage source 11, so that the cathode current can only increase insignificantly within a predetermined period of time.
  • the switch 9 can also be part of the voltage source 11 or located between the voltage source 11 and the choke 10. It could also be used instead of disconnecting the voltage source 11 of the cathode also cause a short circuit between anode 8 and cathode 6.
  • the two resistors 13, 14 represent a voltage divider, while the resistor 19 together with the capacitor 20 constitutes an RC element which integrates the cathode voltage reduced to a processable size.
  • the integration time constant which results from the mathematical product of the resistance value of the resistor 19 and the capacitance value of the capacitor 20, is chosen so that for a given lower limit value for the voltage drop and for a fixed minimum time period of the voltage drop, the triggering of the Switch 9 set signal level is obtained.
  • the voltage integrated on the capacitor 20 is compared with the current voltage value by means of the conventional differential amplifier circuit 16, 17, 18, 22, 28.
  • the output voltage of the differential amplifier 17 is evaluated with a conventional trigger circuit 23, 24, 25. If the trigger switching point is exceeded, the switch 9 is triggered.
  • anode 8 and the substrate carrier 4 are electrically insulated from one another or are electrically connected to one another or are identical. It is also immaterial whether anode 8 and substrate carrier 4 are both or only one of them at the end potential of vacuum chamber 1.
  • V / ⁇ s is used as the lower limit for the steepness of the drop in the cathode voltage, and 5 ⁇ s as the minimum duration.
  • the circuit arrangement according to the invention does not perform a simple du / dt evaluation because a classic differentiating circuit with a coupling in of the AC component of the cathode voltage via a capacitor does not lead to success. Rather, a pure differentiation circuit would "roughen" the image of the cathode voltage in such a way that the natural fluctuations in the sputtering process as a result of occupancy of the electrodes, irregularities in the gas flow and substrate movements would cause a large number of faulty arcing reports.
  • the present invention is against the mean value of the cathode voltage is compared with the instantaneous value of the cathode voltage and an arc signal is only emitted if a dynamic limit value is exceeded.
  • the mean value of the cathode voltage is formed over a period of approximately 5 ⁇ s. If this mean value is, for example, 10 V more negative than the current cathode voltage, the switch 9 is actuated.
  • the criterion for the switching action is therefore the exceeding of a threshold value of the differential voltage from the instantaneous voltage minus the mean voltage value, which is continuously formed over a defined period of time.

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Physical Vapour Deposition (AREA)
  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)
EP92111749A 1991-08-20 1992-07-10 Einrichtung zur Unterdrückung von Lichtbögen Expired - Lifetime EP0528163B1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE4127504 1991-08-20
DE4127504A DE4127504A1 (de) 1991-08-20 1991-08-20 Einrichtung zur unterdrueckung von lichtboegen

Publications (2)

Publication Number Publication Date
EP0528163A1 EP0528163A1 (de) 1993-02-24
EP0528163B1 true EP0528163B1 (de) 1995-09-13

Family

ID=6438674

Family Applications (1)

Application Number Title Priority Date Filing Date
EP92111749A Expired - Lifetime EP0528163B1 (de) 1991-08-20 1992-07-10 Einrichtung zur Unterdrückung von Lichtbögen

Country Status (5)

Country Link
US (1) US5192894A (es)
EP (1) EP0528163B1 (es)
JP (1) JPH06132095A (es)
DE (2) DE4127504A1 (es)
ES (1) ES2079749T3 (es)

Families Citing this family (76)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4202425C2 (de) * 1992-01-29 1997-07-17 Leybold Ag Verfahren und Vorrichtung zum Beschichten eines Substrats, insbesondere mit elektrisch nichtleitenden Schichten
IT1262897B (it) * 1992-03-11 1996-07-22 Proel Tecnologie Spa Generatore di plasma perfezionato e relativo metodo di ionizzazione
CH689767A5 (de) * 1992-03-24 1999-10-15 Balzers Hochvakuum Verfahren zur Werkstueckbehandlung in einer Vakuumatmosphaere und Vakuumbehandlungsanlage.
EP0663019B1 (en) * 1992-09-30 1998-12-02 Advanced Energy Industries, Inc. Topographically precise thin film coating system
US6217717B1 (en) 1992-12-30 2001-04-17 Advanced Energy Industries, Inc. Periodically clearing thin film plasma processing system
US5427669A (en) * 1992-12-30 1995-06-27 Advanced Energy Industries, Inc. Thin film DC plasma processing system
US5718813A (en) * 1992-12-30 1998-02-17 Advanced Energy Industries, Inc. Enhanced reactive DC sputtering system
CH686747A5 (de) * 1993-04-01 1996-06-14 Balzers Hochvakuum Optisches Schichtmaterial.
US5698082A (en) * 1993-08-04 1997-12-16 Balzers Und Leybold Method and apparatus for coating substrates in a vacuum chamber, with a system for the detection and suppression of undesirable arcing
DE4326100B4 (de) * 1993-08-04 2006-03-23 Unaxis Deutschland Holding Gmbh Verfahren und Vorrichtung zum Beschichten von Substraten in einer Vakuumkammer, mit einer Einrichtung zur Erkennung und Unterdrückung von unerwünschten Lichtbögen
DE4420951C2 (de) * 1994-06-16 1998-01-22 Leybold Ag Einrichtung zum Erfassen von Mikroüberschlägen in Zerstäubungsanlagen
DE4438463C1 (de) * 1994-10-27 1996-02-15 Fraunhofer Ges Forschung Verfahren und Schaltung zur bipolaren pulsförmigen Energieeinspeisung in Niederdruckplasmen
DE4441206C2 (de) * 1994-11-19 1996-09-26 Leybold Ag Einrichtung für die Unterdrückung von Überschlägen in Kathoden-Zerstäubungseinrichtungen
WO1996031899A1 (en) 1995-04-07 1996-10-10 Advanced Energy Industries, Inc. Adjustable energy quantum thin film plasma processing system
US5576939A (en) * 1995-05-05 1996-11-19 Drummond; Geoffrey N. Enhanced thin film DC plasma power supply
US5584974A (en) * 1995-10-20 1996-12-17 Eni Arc control and switching element protection for pulsed dc cathode sputtering power supply
AT405582B (de) * 1995-10-30 1999-09-27 Ruebig Ges M B H & Co Kg Vorrichtung zum behandeln eines werkstückes in einer gasentladung
US5917286A (en) 1996-05-08 1999-06-29 Advanced Energy Industries, Inc. Pulsed direct current power supply configurations for generating plasmas
US5682067A (en) * 1996-06-21 1997-10-28 Sierra Applied Sciences, Inc. Circuit for reversing polarity on electrodes
US5882492A (en) * 1996-06-21 1999-03-16 Sierra Applied Sciences, Inc. A.C. plasma processing system
DE19651615C1 (de) * 1996-12-12 1997-07-10 Fraunhofer Ges Forschung Verfahren zum Aufbringen von Kohlenstoffschichten durch reaktives Magnetron-Sputtern
DE19651811B4 (de) * 1996-12-13 2006-08-31 Unaxis Deutschland Holding Gmbh Vorrichtung zum Belegen eines Substrats mit dünnen Schichten
DE19702187C2 (de) * 1997-01-23 2002-06-27 Fraunhofer Ges Forschung Verfahren und Einrichtung zum Betreiben von Magnetronentladungen
EP1025276A1 (en) * 1997-09-17 2000-08-09 Tokyo Electron Limited Device and method for detecting and preventing arcing in rf plasma systems
US6011704A (en) * 1997-11-07 2000-01-04 Sierra Applied Sciences, Inc. Auto-ranging power supply
US5993613A (en) * 1997-11-07 1999-11-30 Sierra Applied Sciences, Inc. Method and apparatus for periodic polarity reversal during an active state
US5990668A (en) * 1997-11-07 1999-11-23 Sierra Applied Sciences, Inc. A.C. power supply having combined regulator and pulsing circuits
US5910886A (en) * 1997-11-07 1999-06-08 Sierra Applied Sciences, Inc. Phase-shift power supply
US5889391A (en) * 1997-11-07 1999-03-30 Sierra Applied Sciences, Inc. Power supply having combined regulator and pulsing circuits
US6280579B1 (en) * 1997-12-19 2001-08-28 Applied Materials, Inc. Target misalignment detector
US6090246A (en) * 1998-01-20 2000-07-18 Micron Technology, Inc. Methods and apparatus for detecting reflected neutrals in a sputtering process
DE19848636C2 (de) * 1998-10-22 2001-07-26 Fraunhofer Ges Forschung Verfahren zur Überwachung einer Wechselspannungs-Entladung an einer Doppelelektrode
DE19949394A1 (de) 1999-10-13 2001-04-19 Balzers Process Systems Gmbh Elektrische Versorgungseinheit und Verfahren zur Reduktion der Funkenbildung beim Sputtern
DE10034895C2 (de) * 2000-07-18 2002-11-14 Fraunhofer Ges Forschung Verfahren zur Erkennung von Überschlägen in gepulst betriebenen Plasmen
US7981257B2 (en) 2002-04-12 2011-07-19 Schneider Electric USA, Inc. Current-based method and apparatus for detecting and classifying arcs
US7988833B2 (en) * 2002-04-12 2011-08-02 Schneider Electric USA, Inc. System and method for detecting non-cathode arcing in a plasma generation apparatus
US20050236266A1 (en) * 2002-06-19 2005-10-27 Poole John E Sputter target monitoring system
JP2006507662A (ja) * 2002-06-28 2006-03-02 東京エレクトロン株式会社 プラズマ処理システム内のアーク抑制方法およびシステム
US20040112735A1 (en) * 2002-12-17 2004-06-17 Applied Materials, Inc. Pulsed magnetron for sputter deposition
US6967305B2 (en) * 2003-08-18 2005-11-22 Mks Instruments, Inc. Control of plasma transitions in sputter processing systems
US7095179B2 (en) * 2004-02-22 2006-08-22 Zond, Inc. Methods and apparatus for generating strongly-ionized plasmas with ionizational instabilities
DE102004015090A1 (de) 2004-03-25 2005-11-03 Hüttinger Elektronik Gmbh + Co. Kg Bogenentladungserkennungseinrichtung
US6943317B1 (en) * 2004-07-02 2005-09-13 Advanced Energy Industries, Inc. Apparatus and method for fast arc extinction with early shunting of arc current in plasma
US7133267B2 (en) * 2004-11-10 2006-11-07 Ametek, Inc. Arc detection circuit
US7067829B2 (en) * 2004-11-23 2006-06-27 Ibis Technology Coporation Power sag detection and control in ion implanting system
DE502005009129D1 (de) * 2005-04-12 2010-04-15 Hauzer Techno Coating B V Vorrichtung zur Plasmabehandlung und/oder zur Beschichtung von Werkstücken
US7305311B2 (en) * 2005-04-22 2007-12-04 Advanced Energy Industries, Inc. Arc detection and handling in radio frequency power applications
EP1720195B1 (de) * 2005-05-06 2012-12-12 HÜTTINGER Elektronik GmbH + Co. KG Arcunterdrückungsanordnung
US20060283702A1 (en) * 2005-06-21 2006-12-21 Applied Materials, Inc. Random pulsed DC power supply
ATE421791T1 (de) 2005-12-22 2009-02-15 Huettinger Elektronik Gmbh Verfahren und vorrichtung zur arcerkennung in einem plasmaprozess
US7507977B2 (en) * 2006-03-14 2009-03-24 Axcelis Technologies, Inc. System and method of ion beam control in response to a beam glitch
JP2009530769A (ja) * 2006-03-14 2009-08-27 アクセリス テクノロジーズ， インコーポレイテッド イオンビームの分裂を緩和するアーク消滅回路
US20080000768A1 (en) * 2006-06-30 2008-01-03 Stimson Bradley O Electrically Coupled Target Panels
US7514935B2 (en) * 2006-09-13 2009-04-07 Advanced Energy Industries, Inc. System and method for managing power supplied to a plasma chamber
DE502006005363D1 (de) 2006-11-23 2009-12-24 Huettinger Elektronik Gmbh Verfahren zum Erkennen einer Bogenentladung in einem Plasmaprozess und Bogenentladungserkennungsvorrichtung
US7795817B2 (en) 2006-11-24 2010-09-14 Huettinger Elektronik Gmbh + Co. Kg Controlled plasma power supply
EP1928009B1 (de) 2006-11-28 2013-04-10 HÜTTINGER Elektronik GmbH + Co. KG Bogenentladungs-Erkennungseinrichtung, Plasma-Leistungsversorgung und Verfahren zum Erkennen von Bogenentladungen
EP1933362B1 (de) 2006-12-14 2011-04-13 HÜTTINGER Elektronik GmbH + Co. KG Bogenentladungs-Erkennungseinrichtung, Plasma-Leistungsversorgung und Verfahren zum Erkennen von Bogenentladungen
US8217299B2 (en) * 2007-02-22 2012-07-10 Advanced Energy Industries, Inc. Arc recovery without over-voltage for plasma chamber power supplies using a shunt switch
EP1978542B1 (de) 2007-03-08 2010-12-29 HÜTTINGER Elektronik GmbH + Co. KG Verfahren und Vorrichtung zum Unterdrücken von Bogenentladungen beim Betreiben eines Plasmaprozesses
EP1995818A1 (en) * 2007-05-12 2008-11-26 Huettinger Electronic Sp. z o. o Circuit and method for reducing electrical energy stored in a lead inductance for fast extinction of plasma arcs
ATE547804T1 (de) * 2007-12-24 2012-03-15 Huettinger Electronic Sp Z O O Stromänderungsbegrenzungsvorrichtung
US8158017B2 (en) * 2008-05-12 2012-04-17 Lam Research Corporation Detection of arcing events in wafer plasma processing through monitoring of trace gas concentrations
US8044594B2 (en) * 2008-07-31 2011-10-25 Advanced Energy Industries, Inc. Power supply ignition system and method
US8395078B2 (en) 2008-12-05 2013-03-12 Advanced Energy Industries, Inc Arc recovery with over-voltage protection for plasma-chamber power supplies
DE102008060838A1 (de) 2008-12-05 2010-06-10 Zounek, Alexis, Dr. Beschichtungsverfahren, Vorrichtung zur Durchführung des Verfahrens
PL2648209T3 (pl) * 2009-02-17 2018-06-29 Solvix Gmbh Urządzenie zasilające do obróbki plazmowej
US8619395B2 (en) * 2010-03-12 2013-12-31 Arc Suppression Technologies, Llc Two terminal arc suppressor
US8552665B2 (en) 2010-08-20 2013-10-08 Advanced Energy Industries, Inc. Proactive arc management of a plasma load
EP2463890A1 (en) 2010-12-08 2012-06-13 Applied Materials, Inc. Generating plasmas in pulsed power systems
US10704136B2 (en) 2013-03-05 2020-07-07 Raytheon Technologies Corporation Cathodic arc deposition stinger
CN103346548B (zh) * 2013-07-05 2015-11-25 苏州贝昂科技有限公司 一种高压离子净化器上的放电监测保护电路
WO2014194813A1 (zh) 2013-06-04 2014-12-11 苏州贝昂科技有限公司 离子风净化器、高压离子净化器上的放电监测保护电路
DE102017128402A1 (de) 2017-11-30 2019-06-06 Pva Tepla Ag Verfahren zur Verhinderung von Lichtbögen in Plasmanitrieranlagen
US11013075B2 (en) 2018-12-20 2021-05-18 Nxp Usa, Inc. RF apparatus with arc prevention using non-linear devices
JP7468241B2 (ja) * 2020-08-12 2024-04-16 株式会社島津製作所 成膜装置、成膜方法およびプログラム

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3909664A (en) * 1973-09-17 1975-09-30 Outboard Marine Corp Plasma spraying method and apparatus
DE3220434A1 (de) * 1982-05-29 1983-12-01 Robert Bosch Gmbh, 7000 Stuttgart Verfahren zur ueberwachung einer messgroesse
BG41744A1 (en) * 1984-11-26 1987-08-14 Savov Method for control of chimico= thermic processing of work- pieces with glowing dicharge in medium of processing gas and device for implementing this method
BG41745A1 (en) * 1984-12-29 1987-08-14 Minchev Device for discontinuing of arc dicharges in gas dicharge vessel
GB8516537D0 (en) * 1985-06-29 1985-07-31 Standard Telephones Cables Ltd Pulsed plasma apparatus
DE3538494A1 (de) * 1985-10-30 1987-05-07 Boehringer Andreas Aus einer gleichspannungsquelle gespeiste elektrische schaltungsanordnung zur versorgung eines verbraucherzweipols mit eingepraegtem, jedoch unterbrechbarem gleichstrom oder eingepraegtem, jedoch unterbrechbarem, blockfoermigem wechselstrom mit einstellbarer begrenzung der spannungen am verbraucherzweipol und an den verwendeten elektronischen einwegschaltern
US4733137A (en) * 1986-03-14 1988-03-22 Walker Magnetics Group, Inc. Ion nitriding power supply
US4786844A (en) * 1987-03-30 1988-11-22 Rpc Industries Wire ion plasma gun
DE3821208C1 (es) * 1988-06-23 1989-11-02 Leybold Ag, 6450 Hanau, De
US4936960A (en) * 1989-01-03 1990-06-26 Advanced Energy Industries, Inc. Method and apparatus for recovery from low impedance condition during cathodic arc processes
FR2648001B1 (fr) * 1989-05-31 1991-09-27 Breda Jean Pierre Alimentation en courant continu d'electrodes a plasma et procede pour regenerer un plasma
DE3923662A1 (de) * 1989-07-18 1991-01-24 Leybold Ag Schaltungsanordnung zum automatischen abstimmen eines anpassungsnetzwerks
US5241152A (en) * 1990-03-23 1993-08-31 Anderson Glen L Circuit for detecting and diverting an electrical arc in a glow discharge apparatus
US5037522B1 (en) * 1990-07-24 1996-07-02 Vergason Technology Inc Electric arc vapor deposition device

Also Published As

Publication number Publication date
US5192894A (en) 1993-03-09
ES2079749T3 (es) 1996-01-16
DE4127504A1 (de) 1993-02-25
JPH06132095A (ja) 1994-05-13
EP0528163A1 (de) 1993-02-24
DE59203659D1 (de) 1995-10-19

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