EP0511360B1 - Source d'electrons et procede de realisation - Google Patents

Source d'electrons et procede de realisation Download PDF

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Publication number
EP0511360B1
EP0511360B1 EP91920863A EP91920863A EP0511360B1 EP 0511360 B1 EP0511360 B1 EP 0511360B1 EP 91920863 A EP91920863 A EP 91920863A EP 91920863 A EP91920863 A EP 91920863A EP 0511360 B1 EP0511360 B1 EP 0511360B1
Authority
EP
European Patent Office
Prior art keywords
gate electrode
electrode
semiconducting
opening
cavity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
EP91920863A
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German (de)
English (en)
French (fr)
Other versions
EP0511360A1 (fr
Inventor
Didier Pribat
Thien Binh Vu
Pierre Legagneux
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thomson Recherche
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Thomson Recherche
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Publication date
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Publication of EP0511360A1 publication Critical patent/EP0511360A1/fr
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Publication of EP0511360B1 publication Critical patent/EP0511360B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
    • H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J3/00—Details of electron-optical or ion-optical arrangements or of ion traps common to two or more basic types of discharge tubes or lamps
    • H01J3/02—Electron guns
    • H01J3/021—Electron guns using a field emission, photo emission, or secondary emission electron source
    • H01J3/022—Electron guns using a field emission, photo emission, or secondary emission electron source with microengineered cathode, e.g. Spindt-type

Definitions

  • the invention relates to an electron source and its production method.
  • the invention applies to the field of field effect microcathodes and it makes it possible to obtain, over the entire surface of the devices in question, an electronic emission consisting of parallel beams coming from each microtip.
  • the invention consists of the interposition of a second electrode, coplanar with the gate electrode, the polarity of which is adapted so as to allow the focusing of each microbeam.
  • Figure 1a shows the block diagram of a field effect microcathode. Due to the small dimensions of the basic structure, it is possible to group together some 106 elements identical to that of FIG. 1a per cm (see FIG. 1b), which can have advantages for the manufacture of electron guns in particular.
  • One of the drawbacks of this type of microcathode however lies in the large opening of the beam emitted at each point.
  • Figure 2 shows this situation schematically. Because of this large opening at each microtip, it appears extremely difficult to be able to focus (see Figure 3) or process the electron beams emitted from a network of such microcathodes, which limits their practical interest.
  • the second electrode is superimposed on the extraction grid and isolated by a second dielectric D2 which must substantially have a thickness equivalent to the grid dielectric D1 taking into account the focusing voltages likely to be used.
  • a second dielectric D2 which must substantially have a thickness equivalent to the grid dielectric D1 taking into account the focusing voltages likely to be used.
  • dielectric D2 With regard to the dielectric D2, this can lead on the one hand to problems of emission of secondary electrons which would come to parasitize the main beam and on the other hand to problems of appearance of localized electrostatic charges likely to deform locally each microbeam emitted. With regard to the focusing electrode G2, the interception of too much current could quite simply lead to its destruction.
  • One way to remedy the problem is, of course, to arrange the dielectric D2 and the electrode G2 in withdrawal with respect to the gate opening, as shown in FIG. 6.
  • the invention therefore relates to an electron source comprising on a substrate a dielectric layer comprising at least one cavity in which is located a protruding cathode electrode, a first gate electrode being located on the upper face of the dielectric layer. and at least partially surrounding the cavity, said source comprising at least a second gate electrode situated on the same side as the first gate electrode with respect to the upper face of the dielectric layer, the first gate electrode being located between the cavity and the second gate electrode, and the two electrodes being isolated from each other, the first gate electrode and the second gate electrode are both located on the upper face of the dielectric layer.
  • Such a source of electrons is known from document EP-A-0 395 158.
  • the source of electrons according to the present invention differs from the source known from document EP-A-0 395 158 in that the second gate electrode is thicker than the first gate electrode.
  • the use of a focusing electrode is no longer superimposed on the gate electrode as in FIGS. 4 or 6, but electrodes coplanar, as shown in Figure 7.
  • the coplanar electrodes are the gate electrodes VG1 and VG2 located on the dielectric layer and surrounding the cavity CA in which is located a microcathode MP.
  • the grid VG1 serves as an electron extraction grid and the grid VG2, as the focusing grid.
  • the second gate electrode VG2 partially surrounds the first gate electrode VG1. According to another variant, the second gate electrode VG2 entirely surrounds the cavity assembly CA and the first electrode VG1.
  • a substrate 1 typically of silicon (100) or (111) on which a layer 2 of Si3N4 (0.1 ⁇ m thick) is successively deposited, a layer 3 of SiO2 (1 ⁇ m thick) and a layer 4 of highly doped polycrystalline silicon (some 10 ⁇ 3 ohm.cm) with small grains, that is to say obtained by a CVD (Chemical Vapor Deposition) process at low temperature (and therefore preferably at reduced pressure, typically in the 10 - 300 torr range).
  • CVD Chemical Vapor Deposition
  • silicon wafer type SOI Silicon on Insulation
  • SIMOX Silicon on Insulation
  • liquid phase recrystallization process for details on these different processes, see IEEE Circuit and Device Magazine, volumes 3 and 4, July and November 1987.
  • FIGS. 8b and 8c The pattern shown in FIGS. 8b and 8c is etched into the layer 4 of silicon on insulator 3 in section and in view of above. This will be the only masking step in the process (see below). An etching is thus carried out of at least a first opening H01 in the layer of semiconductor or conductive material 4 and of a second opening H02 surrounding the first opening H01, the width of the etching of the first opening being greater than that of the engraving of the second opening. Note that this is not submicron etching and therefore the prior lithography operation can be carried out in a conventional optical manner, which is an advantage.
  • the deposit obtained is oxidized, so as to make the weakest intervals join (with silica) (see FIG. 8e), but leaving regularly spaced openings at the places of larger dimensions.
  • the mask in Figures 8a and 8c is suitable for this purpose (typical dimensions of 1.5 and 2 ⁇ m respectively).
  • a variant represented in FIG. 8f consists in using a thicker starting silicon layer (for example 1 ⁇ m) and in performing directly a submicron etching (etching of 0.5 ⁇ m for example) at the places where it is desired that the two oxidation fronts meet.
  • a structure similar to that of FIG. 8e is obtained after oxidation.
  • the drawback is the obligation to use the electronic masking step associated with obtaining submicron patterns (engravings of 0.5 ⁇ m); on the other hand, it is thus possible to avoid the selective epitaxy step of FIG. 8d.
  • a reactive ion etching (RIE) operation is then carried out using the SiO2 previously formed as a mask.
  • the engraving is stopped when poly-Si pavers become visible ( Figure 8g).
  • the Si substrate protected by the Si3N4 layer is not oxidized during this treatment.
  • the Si3N4 is eliminated in the housings (by selective attack with H3PO4 for example), so as to expose the Si substrate locally (FIG. 8j).
  • this epitaxy can be carried out in a MOCVD reactor (Metalorganic Chemical Vapor Deposition: Vapor phase epitaxy of organometallic). reduced pressure.
  • MOCVD reactor Metalorganic Chemical Vapor Deposition: Vapor phase epitaxy of organometallic. reduced pressure.
  • this growth can be done by selective epitaxy in a CVD reactor at a temperature between 900 and 1100 ° C using a gas mixture comprising SiH4 + HCl or SiH2Cl2 + HCl in l carrier hydrogen.
  • this selective epitaxy can be carried out between 600 and 800 ° C. in a VPE reactor using a gas mixture comprising AsCl3 diluted in H2 and a source of solid gallium.
  • the passivation SiO2 is then eliminated, so as to obtain the structure shown in FIG. 9 where the necessary polarizations are also indicated.
  • a liquid resin (like photoresist) is then deposited, the operation possibly being preceded by a surface-active treatment (using a "primer") in order to allow the resin to penetrate well into the micrologations (figure 12b).
  • This resin is then polymerized at 70 - 120 ° C depending on the type.
  • the resin is then etched in an oxygen-based plasma, so as to eliminate it from the upper part of the device, but keeping it in the micrologations, so as to protect the gold film in contact with the substrate (Figure 12c).
  • the gold from the upper part of the device is removed (using an I2 / KI solution for example), the film in contact with the substrate (and masked by the resin) being protected (FIG. 12d).
  • a second masking is carried out so as to eliminate this oxide on the VG2 type pads (see FIGS. 10b).
  • this masking operation is not particularly delicate, since it does not require precise alignment. It suffices that the two VG1 pads adjacent to the VG2 type pads are masked. The border of the mask can fall anywhere on the silica separating the studs VG2 and VG1.
  • a second selective epitaxy operation is carried out (as described in relation to FIG. 8d) so as to obtain the structure shown in Figure 10c.
  • the upper plane of the VG2 type pad is raised relative to the upper plane of the VG1 type pads.
  • lateral growth of VG2 was obtained during this operation, equivalent to vertical growth (0.5 ⁇ m in Figure 10c).
  • the silica is then removed from the upper part situated between the pads VG1 and VG2 while practicing the operation of forming micrologations (FIG. 10d).
  • FIGS 9 and 11 also show examples of electrical assemblies of the device according to the invention.
  • the device of FIG. 11 has been completed by an anode A arranged opposite microtips such as MP. An electron emission can therefore take place between a microtip MP and anode A.
  • one or more voltage sources apply determined potentials to a micropoint MP a grid VG1, a grid VG2 and to the anode A.

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Cold Cathode And The Manufacture (AREA)
EP91920863A 1990-11-16 1991-11-15 Source d'electrons et procede de realisation Expired - Lifetime EP0511360B1 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR9014287A FR2669465B1 (fr) 1990-11-16 1990-11-16 Source d'electrons et procede de realisation.
FR9014287 1990-11-16
PCT/FR1991/000903 WO1992009095A1 (fr) 1990-11-16 1991-11-15 Source d'electrons et procede de realisation

Publications (2)

Publication Number Publication Date
EP0511360A1 EP0511360A1 (fr) 1992-11-04
EP0511360B1 true EP0511360B1 (fr) 1996-01-31

Family

ID=9402268

Family Applications (1)

Application Number Title Priority Date Filing Date
EP91920863A Expired - Lifetime EP0511360B1 (fr) 1990-11-16 1991-11-15 Source d'electrons et procede de realisation

Country Status (6)

Country Link
US (1) US5581146A (ja)
EP (1) EP0511360B1 (ja)
JP (1) JP3107818B2 (ja)
DE (1) DE69116859T2 (ja)
FR (1) FR2669465B1 (ja)
WO (1) WO1992009095A1 (ja)

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JPH05242794A (ja) * 1991-11-29 1993-09-21 Motorola Inc 集積化された静電界レンズを有する電界放出デバイス
JPH07104679A (ja) * 1993-09-30 1995-04-21 Futaba Corp 電界放出形蛍光表示装置
US5528103A (en) * 1994-01-31 1996-06-18 Silicon Video Corporation Field emitter with focusing ridges situated to sides of gate
US5644187A (en) * 1994-11-25 1997-07-01 Motorola Collimating extraction grid conductor and method
JPH0982214A (ja) * 1994-12-05 1997-03-28 Canon Inc 電子放出素子、電子源、及び画像形成装置
JP2812356B2 (ja) * 1995-02-24 1998-10-22 日本電気株式会社 電界放出型電子銃
KR100266517B1 (ko) * 1995-07-07 2000-09-15 가네꼬 히사시 전계 방출 냉 캐소드 및 개선된 게이트 구조를 갖는 전자 총
JPH1012127A (ja) * 1996-06-24 1998-01-16 Nec Corp 電界電子放出装置
JP3171121B2 (ja) * 1996-08-29 2001-05-28 双葉電子工業株式会社 電界放出型表示装置
JP2891196B2 (ja) * 1996-08-30 1999-05-17 日本電気株式会社 冷陰極電子銃およびこれを用いた電子ビーム装置
JP3745844B2 (ja) * 1996-10-14 2006-02-15 浜松ホトニクス株式会社 電子管
US6002199A (en) * 1997-05-30 1999-12-14 Candescent Technologies Corporation Structure and fabrication of electron-emitting device having ladder-like emitter electrode
US6013974A (en) * 1997-05-30 2000-01-11 Candescent Technologies Corporation Electron-emitting device having focus coating that extends partway into focus openings
FR2766011B1 (fr) 1997-07-10 1999-09-24 Alsthom Cge Alcatel Cathode froide a micropointes
US6171164B1 (en) 1998-02-19 2001-01-09 Micron Technology, Inc. Method for forming uniform sharp tips for use in a field emission array
US6107728A (en) * 1998-04-30 2000-08-22 Candescent Technologies Corporation Structure and fabrication of electron-emitting device having electrode with openings that facilitate short-circuit repair
FR2780808B1 (fr) 1998-07-03 2001-08-10 Thomson Csf Dispositif a emission de champ et procedes de fabrication
FR2780803B1 (fr) 1998-07-03 2002-10-31 Thomson Csf Commande d'un ecran a cathodes a faible affinite electronique
FR2784225B1 (fr) * 1998-10-02 2001-03-09 Commissariat Energie Atomique Source d'electrons a cathodes emissives comportant au moins une electrode de protection contre des emissions parasites
FR2814277A1 (fr) * 2000-09-19 2002-03-22 Thomson Tubes & Displays Canon pour tube a rayons cathodiques comportant des cathodes a micropointes
FR2829873B1 (fr) * 2001-09-20 2006-09-01 Thales Sa Procede de croissance localisee de nanotubes et procede de fabrication de cathode autoalignee utilisant le procede de croissance de nanotubes
FR2832995B1 (fr) * 2001-12-04 2004-02-27 Thales Sa Procede de croissance catalytique de nanotubes ou nanofibres comprenant une barriere de diffusion de type alliage nisi
US6960876B2 (en) * 2003-02-27 2005-11-01 Hewlett-Packard Development Company, L.P. Electron emission devices
FR2879342B1 (fr) * 2004-12-15 2008-09-26 Thales Sa Cathode a emission de champ, a commande optique
US7402942B2 (en) * 2005-10-31 2008-07-22 Samsung Sdi Co., Ltd. Electron emission device and electron emission display using the same
KR20070083112A (ko) * 2006-02-20 2007-08-23 삼성에스디아이 주식회사 전자 방출 디바이스와 이를 이용한 전자 방출 표시디바이스
DE102007010462B4 (de) 2007-03-01 2010-09-16 Sellmair, Josef, Dr. Verfahren zur Herstellung einer Teilchenstrahlquelle

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US3748522A (en) * 1969-10-06 1973-07-24 Stanford Research Inst Integrated vacuum circuits
US4578614A (en) * 1982-07-23 1986-03-25 The United States Of America As Represented By The Secretary Of The Navy Ultra-fast field emitter array vacuum integrated circuit switching device
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Also Published As

Publication number Publication date
US5581146A (en) 1996-12-03
FR2669465B1 (fr) 1996-07-12
DE69116859T2 (de) 1996-06-05
JP3107818B2 (ja) 2000-11-13
DE69116859D1 (de) 1996-03-14
EP0511360A1 (fr) 1992-11-04
JPH05505906A (ja) 1993-08-26
FR2669465A1 (fr) 1992-05-22
WO1992009095A1 (fr) 1992-05-29

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