EP0480922B1 - PROCEDE DE FABRICATION DE CONTACTS AU CuCr POUR DES INTERRUPTEURS A VIDE - Google Patents

PROCEDE DE FABRICATION DE CONTACTS AU CuCr POUR DES INTERRUPTEURS A VIDE Download PDF

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Publication number
EP0480922B1
EP0480922B1 EP89906021A EP89906021A EP0480922B1 EP 0480922 B1 EP0480922 B1 EP 0480922B1 EP 89906021 A EP89906021 A EP 89906021A EP 89906021 A EP89906021 A EP 89906021A EP 0480922 B1 EP0480922 B1 EP 0480922B1
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EP
European Patent Office
Prior art keywords
process according
copper
powder
powder compact
sintering
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
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EP89906021A
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German (de)
English (en)
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EP0480922A1 (fr
Inventor
Horst Kippenberg
Franz Hauner
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Siemens AG
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Siemens AG
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Filing date
Publication date
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Priority to DE89906021T priority Critical patent/DE58906658D1/de
Publication of EP0480922A1 publication Critical patent/EP0480922A1/fr
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Publication of EP0480922B1 publication Critical patent/EP0480922B1/fr
Anticipated expiration legal-status Critical
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H11/00—Apparatus or processes specially adapted for the manufacture of electric switches
    • H01H11/04—Apparatus or processes specially adapted for the manufacture of electric switches of switch contacts
    • H01H11/048—Apparatus or processes specially adapted for the manufacture of electric switches of switch contacts by powder-metallurgical processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H1/00—Contacts
    • H01H1/02—Contacts characterised by the material thereof
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/12—Both compacting and sintering
    • B22F3/14—Both compacting and sintering simultaneously
    • B22F3/15—Hot isostatic pressing
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C1/00—Making non-ferrous alloys
    • C22C1/04—Making non-ferrous alloys by powder metallurgy
    • C22C1/0425—Copper-based alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H1/00—Contacts
    • H01H1/02—Contacts characterised by the material thereof
    • H01H1/0203—Contacts characterised by the material thereof specially adapted for vacuum switches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H1/00—Contacts
    • H01H1/02—Contacts characterised by the material thereof
    • H01H1/0203—Contacts characterised by the material thereof specially adapted for vacuum switches
    • H01H1/0206—Contacts characterised by the material thereof specially adapted for vacuum switches containing as major components Cu and Cr

Definitions

  • the invention relates to a method for producing a vacuum switch contact piece based on copper and chrome according to the preamble of claim 1.
  • Composite materials which consist of a conductive and at least one high-melting component and which, if necessary, contain additives which reduce welding force or reduce the tearing current have proven to be useful as contact materials for vacuum interrupters.
  • the widespread CuCr materials are a typical example.
  • the high-melting component such as chromium has only a low solubility in the main electrically conductive component such as copper, powder metallurgy processes are particularly suitable for the production of CuCr contact materials.
  • a frequently used method for producing such contact materials is the sintering of a Cr framework and the subsequent infiltration of the sintered skeleton with Cu, which is described, for example, in DE-A-25 21 504 or DE-B-25 36 153.
  • a liquid phase is used, blanks with a clear oversize are produced, which have to be machined accordingly to obtain the final shape.
  • the concentration range available for the high-melting component is restricted.
  • isostatic hot pressing results in negligible residual porosity.
  • HIP isostatic hot pressing
  • the HIP method specified is uneconomical for industrial production of large quantities. Encapsulating the sintered bodies under vacuum means a cost-intensive manufacturing step; hot pressing in the liquid phase, as specified by DE-A-37 29 033 as particularly advantageous, requires complex machining work to produce the contact pads.
  • DE-A-35 43 586 mentions hot isostatic pressing of encapsulated compacts for the production of contact materials based on copper and chromium.
  • this method is not to be regarded as a recommendable production method, but rather only as a method for the production of low-pore comparison samples, i.e. only for special cases, for which a corresponding effort is justified.
  • the object of the invention is therefore to provide a method for producing CuCr contact pieces for vacuum switches made of CuCr material, which provides good material quality with a residual pore content of ⁇ 1% and which is also inexpensive and works economically in the manufacture of the contact pieces from the material.
  • it is intended to use a molding technique with contours close to the final shape and to dispense with complex measures such as vacuum encapsulation.
  • a closed porosity for the CuCr material to be produced is achieved with sufficient certainty from about 95% space filling.
  • the closed porosity is imperative for the non-encapsulated copper-chromium blanks for the HIP process in order to achieve the stated almost complete compression without inclusion of residual oxygen.
  • a mixture of Cu and Cr powder can be pressed into such a blank, the shape of which has already been selected as close as possible to the geometry of the desired contact piece or the required contact pad.
  • This blank is sintered in a solid Cu phase under vacuum and / or under a reducing atmosphere in accordance with the specified two-stage process and finally hot pressed isostatically in the solid Cu phase.
  • the hot isostatic seizure contrary to the previous opinion of the experts, does without encapsulation of the CuCr pressed bodies.
  • neither additional gases are enclosed inside the material nor the chromium oxidized by the residual oxygen.
  • the chromium is oxidized by the residual oxygen in the compressed gas only on the surfaces of the compacts. These outer surfaces are used in the Completion of the contact pieces removed anyway.
  • Contact pieces produced with the method according to the invention have a high material quality due to the homogeneous distribution of the components, their high compression and extremely low porosities. This and the compression and solidification of the material achieved by means of the hot isostatic compression process result in the required good properties as a contact material, such as high breaking capacity, dielectric strength and erosion resistance.
  • the cost-effectiveness of the method according to the invention results in particular from the elimination of the vacuum capsule and further from the fact that the contour of the compact can already be selected very close to the desired final shape by sintering and hot pressing in the solid phase, so that only a slight surface finishing is required. This also minimizes the use of materials.
  • the process according to the invention can advantageously be carried out in such a way that a combined sintering-HIP process is used in which the powder compacts made of copper and chromium are first sintered in a vacuum or under H2 with little pores and then hot pressed isostatically in the same operation.
  • contact pieces can also advantageously be manufactured as composite parts: for example Can contact pads made of CuCr simultaneously with the contact carriers made of Cu as two-layer or two-area parts in one process getting produced. This saves the manufacturing step of connecting - as is usually the case with brazing in a vacuum. This is a significant advantage, in particular when using supports made of solid Cu, since these supports alone cannot be adequately connected to the powder compact by a sintering process.
  • Electrolytically produced Cr powder with a particle size distribution of ⁇ 63 ⁇ m is dry-mixed with Cu powder with a particle size distribution of ⁇ 40 ⁇ m in a ratio of 40:60 and pressed uniaxially to rings with dimensions of ⁇ a 600 / ⁇ i 35 x 6 mm at a pressure of 800 MPa .
  • the compacts are sintered at 1030 ° C for 1 h under hydrogen with a dew point of -70 ° C and then 7 h under high vacuum with a pressure p ⁇ 10 ⁇ 4 mbar.
  • the sintered bodies are then hot isostatically pressed at 950 ° C. for 3 hours at 1200 bar under argon.
  • the desired contact rings can be obtained by simply turning the blanks.
  • a powder mixture of 25 m% aluminothermally produced is placed on a base of Cu powder with a particle size distribution of ⁇ 63 ⁇ m Cr powder with particle size distributions between 45 and 125 ⁇ m and 75 m% Cu powder with particle size distribution ⁇ 40 ⁇ m pressed at a pressure of 600 MPa.
  • a two-layer pressed body 1 according to FIG. 1 with a disc-shaped Cu layer 2 and a truncated-cone-shaped CuCr layer 3 with a contact surface 4 is produced C and 1000 bar argon hot isostatically pressed for about 3 h.
  • the powder compact can also contain high-melting components such as iron (Fe), titanium (Ti), zircon (Zr), niobium (Nb), tantalum (Ta), molybdenum (Mo) and also copper and chromium Alloys thereof.
  • high-melting components such as iron (Fe), titanium (Ti), zircon (Zr), niobium (Nb), tantalum (Ta), molybdenum (Mo) and also copper and chromium Alloys thereof.
  • Easily evaporable additives such as selenium (Se), tellurium (Te), bismuth (Bi), antimony (Sb) or their compounds can also be present.
  • a powder mixture according to Example 1 is pressed into disks at a pressure of 600 MPa and sintered under high vacuum with a pressure of ⁇ 10 ⁇ 4 mbar at approx. 1060 ° C. for about 4 h in the HIP device. Immediately afterwards, hot isostatic pressing is carried out with 500 bar argon at 1030 ° C. for about 2 hours.
  • a powder mixture of 60 m% Cu powder with particle sizes ⁇ 63 ⁇ m and 40 m% Cr powder with particle sizes ⁇ 150 ⁇ m is pressed with 750 MPa to form truncated cone-shaped contact disks 5 according to FIG. 2 with contact surfaces 6.
  • slot contours 7 are simultaneously impressed perpendicular to the pressing direction. Sintering and the HIP process are carried out as in Example 2.
  • a layered structure with a CuCr powder mixture for the contact layer and a Cu powder layer for producing a well-solderable base can also be used as a variant.
  • a powder mixture according to Example 4 is pressed at 800 MPa to form a flat cylindrical contact pad 8 according to FIG. 3 and placed on a disk-shaped base 9 made of low-oxygen or oxygen-free (OFHC) copper before sintering.
  • OFHC oxygen-free
  • the pressed body 8 and the Cu disk 9 connect via sintered bridges.
  • the pressing body 8 and the copper disk 9 are integrally connected, as a result of which there is sufficient strength at the boundary layer.
  • the copper base can be designed as a contact carrier or also directly as a power supply bolt 10.
  • the combination of the sintering and hot pressing step is crucial to ensure high material quality. Due to the closed porosity after sintering, it can be achieved during the HIP process that no noticeable air retention occurs in the material, which can be confirmed by measurements using the following table: O2 / ppm N2 / ppm CuCr40, sintered state 534 14 CuCr40, hot pressed condition 532 19th
  • the oxygen and nitrogen content before and after the hot isostatic pressing of the unencapsulated workpieces are of the same order of magnitude.

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Powder Metallurgy (AREA)
  • Manufacture Of Switches (AREA)
  • High-Tension Arc-Extinguishing Switches Without Spraying Means (AREA)

Abstract

Pour la fabrication de matériaux de contacts au CuCr, on emploie fréquemment des procédés faisant appel uniquement à la métallurgie des poudres ou des procédés par frittage et infiltration. Le but recherché est d'obtenir une porosité résiduelle minimale, qui doit être inférieure à 1 %. Dans l'invention, la densification du comprimé à partir des composants est effectuée en deux étapes, dont la première est un frittage avec une densification jusqu'à l'obtention d'une porosité fermée du composé fritté et la deuxième un procédé de compression isostatique à température élevée, dans lequel les pièces non enrobées sont portées à une masse volumique finale représentant une densité relative d'au moins 99 %. On obtient ainsi un matériau d'excellente qualité pour un coût de fabrication modique. Il est possible, en particulier, de réaliser des contacts à plusieurs couches, ou des liaisons dues uniquement à la nature du matériau, entre le comprimé fritté et une base massive, par exemple un boulon de contact en cuivre.

Claims (15)

  1. Procédé de fabrication d'une pièce de contact d'interrupteur à vide à base de cuivre et de chrome, dans lequel un comprimé de poudre est densifié, comportant les caractéristiques suivantes:La densification du comprimé de poudre s'effectue en deux phases opératoires, dont la première est un processus de frittage avec une densification allant jusqu'à une porosité fermée de la pièce frittée et dont la seconde est un processus de compression isostatique à chaud (HIP), la phase opératoire du processus de frittage étant effectuée alors que le comprimé cuivre-chrome est à l'état solide, caractérisé en ce que le processus de frittage a lieu à des températures comprises entre 1000 °c et 1070 °c et le processus de compression isostatique (HIP) a lieu sous atmosphère de gaz inerte en-dessous de la température de fusion du cuivre (1083 °c), et la pièce frittée est amenée sans encapsulation à une masse volumique finale représentant au moins 99 % de la densité relative.
  2. Procédé suivant la revendication 1, caractérisé en ce que le processus de frittage et le processus HIP sont effectués immédiatement l'un après l'autre sans refroidissement intermédiaire dans une installation pour compression isostatique à haute température.
  3. Procédé suivant la revendication 1 ou 2, caractérisé en ce que le frittage est effectué sous vide poussé sous une pression inférieure ou égale à 10⁻⁴ mbar.
  4. Procédé suivant la revendication 1 ou 2, caractérisé en ce que le frittage du vide, est effectué, outre sous vide, également de temps en temps dans de l'hydrogène pur ayant un point de rosée inférieur à -60 °c.
  5. Procédé suivant la revendication 1 ou 2, caractérisé en ce que le gaz inerte utilisé dans la compression isostatique à chaud (HIP) est l'argon ou l'hélium.
  6. Procédé suivant la revendication 5, caractérisé en ce que la compression isostatique à chaud (HIP) est effectuée à des pressions comprises entre 200 bar et 2.000 bar.
  7. Procédé suivant la revendication 1, caractérisé en ce que l'on utilise un comprimé de poudre en un mélange homogène de cuivre et de chrome contenant de 25 à 40 % de Cr en masse.
  8. Procédé suivant la revendication 1, caractérisé en ce que l'on utilise un comprimé de poudre qui n'est constitué que par endroits d'un mélange homogène de cuivre et de chrome contenant de 25 à 40 % de Cr en masse.
  9. Procédé suivant la revendication 8, caractérisé en ce que le comprimé de poudre comporte, en dehors de zones de mélanges Cu-Cr, aussi des zones de poudre de Cu pur.
  10. Procédé suivant la revendication 1 ou la revendication 8, caractérisé en ce que l'on utilise un comprimé de poudre qui contient au moins par endroits un mélange de poudre de cuivre (Cu) , de chrome (Cr) et d'un ou plusieurs autres constituants à point de fusion élevé comme le fer (Fe), le titane (Ti), le zirconium (Zr), le niobium (Nb), le tantale (Ta), le molybdène (Mo) ou leurs alliages.
  11. Procédé suivant la revendication 1 ou la revendication 8, caractérisé en ce que l'on utilise un comprimé de poudre qui contient au moins par endroit un mélange de poudre de cuivre, de chrome et d'autres additifs volatils comme le sélénium (Se), le tellure (Te), le bismuth
  12. Procédé suivant l'une des revendications précédentes, caractérisé en ce qu'un comprimé de poudre ayant une géométrie à symétrie radiale, par exemple un anneau, un disque ou un tronc de cône (1,5) est fabriqué en ayant presque la géométrie définitive de la pièce de contact finie.
  13. Procédé suivant l'une des revendications précédentes, caractérisé en ce qu'un comprimé de poudre est fabriqué avec des passages ou avec des échancrures (7) parallèles à la direction de compression.
  14. Procédé suivant la revendication 1 ou l'une des revendications 2 à 13, caractérisé en ce que le comprimé de poudre est aggloméré par frittage dans la première phase sur un support massif (9) et que dans la seconde phase est effectuée, en même temps que la densification à la porosité finale, une liaison par coopération de matière entre la pièce frittée (8) et le support massif (9).
  15. Procédé suivant la revendication 14, caractérisé en ce que l'on utilise comme support massif un axe de contact (9) en cuivre ayant peu d'oxygène ou exempt d'oxygène (OFHC).
EP89906021A 1989-05-31 1989-05-31 PROCEDE DE FABRICATION DE CONTACTS AU CuCr POUR DES INTERRUPTEURS A VIDE Expired - Lifetime EP0480922B1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE89906021T DE58906658D1 (de) 1989-05-31 1989-05-31 VERFAHREN ZUM HERSTELLEN VON CuCr-KONTAKTSTÜCKEN FÜR VAKUUMSCHALTER.

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/DE1989/000343 WO1990015424A1 (fr) 1989-05-31 1989-05-31 PROCEDE DE FABRICATION DE CONTACTS AU CuCr POUR DES INTERRUPTEURS A VIDE ET CONTACT CORRESPONDANT

Publications (2)

Publication Number Publication Date
EP0480922A1 EP0480922A1 (fr) 1992-04-22
EP0480922B1 true EP0480922B1 (fr) 1994-01-05

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Country Link
US (1) US5330702A (fr)
EP (1) EP0480922B1 (fr)
JP (1) JPH04505985A (fr)
KR (1) KR920702002A (fr)
WO (1) WO1990015424A1 (fr)

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JP2908071B2 (ja) * 1991-06-21 1999-06-21 株式会社東芝 真空バルブ用接点材料
DE4201940A1 (de) * 1992-01-24 1993-07-29 Siemens Ag Sinterverbundwerkstoff fuer elektrische kontakte in schaltgeraeten der energietechnik
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JP3159827B2 (ja) * 1993-03-11 2001-04-23 株式会社日立製作所 真空遮断器、真空遮断器用電極およびその製作方法
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CN1096322C (zh) * 1998-03-23 2002-12-18 西安理工大学 铜钨——铬铜整体触头立式烧结方法
DE10010723B4 (de) * 2000-03-04 2005-04-07 Metalor Technologies International Sa Verfahren zum Herstellen eines Kontaktwerkstoff-Halbzeuges für Kontaktstücke für Vakuumschaltgeräte sowie Kontaktwerkstoff-Halbzeuge und Kontaktstücke für Vakuumschaltgeräte
KR100400354B1 (ko) * 2000-12-07 2003-10-04 한국과학기술연구원 진공개폐기용 구리-크롬계 접점 소재 제조 방법
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EP1875481A1 (fr) * 2005-04-16 2008-01-09 ABB Technology AG Procede de production de plots de contact pour chambres de commutation a vide
TW200710905A (en) * 2005-07-07 2007-03-16 Hitachi Ltd Electrical contacts for vacuum circuit breakers and methods of manufacturing the same
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UA105512C2 (uk) * 2009-08-17 2014-05-26 Юрій Йосипович Смірнов Спосіб виготовлення композиційного матеріалу на основі міді для електричних контактів
AT11814U1 (de) * 2010-08-03 2011-05-15 Plansee Powertech Ag Verfahren zum pulvermetallurgischen herstellen eines cu-cr-werkstoffs
JP6311325B2 (ja) * 2014-01-23 2018-04-18 株式会社明電舎 電極材料及び電極材料の製造方法
JP5920408B2 (ja) * 2014-06-16 2016-05-18 株式会社明電舎 電極材料の製造方法
JP6015725B2 (ja) 2014-09-11 2016-10-26 株式会社明電舎 電極材料の製造方法
JP6070777B2 (ja) * 2015-06-24 2017-02-01 株式会社明電舎 電極材料の製造方法
JP6197917B1 (ja) 2016-06-08 2017-09-20 株式会社明電舎 電極材料の製造方法

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Also Published As

Publication number Publication date
EP0480922A1 (fr) 1992-04-22
WO1990015424A1 (fr) 1990-12-13
KR920702002A (ko) 1992-08-12
JPH04505985A (ja) 1992-10-15
US5330702A (en) 1994-07-19

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