EP0184645B1 - Chip-Varistor und Verfahren zu seiner Herstellung - Google Patents

Chip-Varistor und Verfahren zu seiner Herstellung Download PDF

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Publication number
EP0184645B1
EP0184645B1 EP85113401A EP85113401A EP0184645B1 EP 0184645 B1 EP0184645 B1 EP 0184645B1 EP 85113401 A EP85113401 A EP 85113401A EP 85113401 A EP85113401 A EP 85113401A EP 0184645 B1 EP0184645 B1 EP 0184645B1
Authority
EP
European Patent Office
Prior art keywords
varistor
chip
squaredlike
squared
metallic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
EP85113401A
Other languages
German (de)
English (en)
French (fr)
Other versions
EP0184645A2 (de
EP0184645A3 (en
Inventor
Peter Brogl
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
C Conradty Nuernberg GmbH and Co KG
Original Assignee
C Conradty Nuernberg GmbH and Co KG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by C Conradty Nuernberg GmbH and Co KG filed Critical C Conradty Nuernberg GmbH and Co KG
Priority to AT85113401T priority Critical patent/ATE40765T1/de
Publication of EP0184645A2 publication Critical patent/EP0184645A2/de
Publication of EP0184645A3 publication Critical patent/EP0184645A3/de
Application granted granted Critical
Publication of EP0184645B1 publication Critical patent/EP0184645B1/de
Expired legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
    • H01C7/102—Varistor boundary, e.g. surface layers

Definitions

  • the invention relates to a chip varistor, consisting of a cuboid body, which is formed at least in part from varistor material and has at least two metallized connection surfaces on two opposite square ends, and a method for its production.
  • Higher energy absorption values can be achieved by increasing the volume of the varistor, for example the entire body can be formed from varistor material. If the same contacting is used as in the known chip varistors, then there is a flashover on the varistor surface with higher pulse currents.
  • This spark formation between the metallized connection surfaces at the ends of the cuboid body, which has dimensions of 8 x 4 x 2 mm, for example, is due to the fact that the contacting formed by the metallized connection surfaces favors a current flow on the surface of the varistor, while the inside of the varistor remains practically de-energized. At higher voltages or pulse currents from about 20 A, there are arcing on the top and bottom sides of the varistor.
  • the object of the invention is therefore to design the chip varistor of the type mentioned in such a way that it has a sufficient volume in order to obtain the required energy absorption capacity and also offers security against sliding sparks on its surface and also offers the possibility of its Make tension adjustable with constant dimensions of its top and bottom sides.
  • the upper and lower sides of the cuboid body adjoining the cuboid ends are provided with a metallization which has an interruption, the metallization of most of the upper side only with the metallized connecting surface of the one cuboid end and the metallization of the most of the underside is only electrically conductively connected to the metallized connection surface of the other cuboid end.
  • the current flow direction is rotated by 90 ° so that current or voltage flashovers are only possible in the area of the interruption of the metallization.
  • the adjustability of the varistor voltage is made possible in a simple manner by choosing different dimensions for the thickness of the cuboid body, which is denoted by H in the exemplary embodiment.
  • each strip-shaped recess can be delimited by two parallel edges which are parallel to the edges of the upper and lower edges. Underside, extend transversely to the longitudinal direction of the cuboid body.
  • the surface of the varistor material in the region of the strip-shaped recesses can be provided with grooves which are incorporated into the varistor material and extend in the direction of the strip-shaped recesses.
  • the cuboid body as a laminated body, consisting of alternating layers of varistor material and electrically highly conductive material running parallel to its top and bottom sides, the latter layer in turn alternating with one and the other metallized Cuboid ends are electrically connected.
  • a method is used, according to which a cuboid body is made of varistor material and is completely metallized on its surfaces, whereupon at least one metallization each on the opposite top and bottom sides of the cuboid body recessing groove is incorporated and then the body is cut transversely to its longitudinal axis into individual longitudinal pieces which form the actual cuboid bodies, so that their longitudinal axis runs in the direction of the transverse axis of the original cuboid body and their transverse axis in the direction of the longitudinal axis of the original cuboid body.
  • variable is used to denote voltage-dependent resistors which generally consist of sintered silicon carbide or zinc oxide with admixtures of other materials in the form of disks or rods and are used above all in communications engineering. Their voltage dependence is based on a variable contact resistance between the individual crystals.
  • the chip varistor shown in FIG. 1 is a cuboid body 1. Its dimensions are, for example, 2 x 1.25 x 0.5 mm (length, width, height) to, for example, 8 x 4 x 4 mm. It consists of an oxide-ceramic resistance material and is provided on the cuboid ends 2, 3 with metallized connection surfaces 8, 9, which completely cover the cuboid ends, and also on its top side 4 and its underside 5 with a metallization 6, 7 (FIG. 2).
  • the metallization of the upper side 4 is electrically conductively connected to the metallized connection surface 9 of one cuboid end 3, while the metallization 7 of the underside 5 is only electrically conductively connected to the metallized connection surface 8 of the other cuboid end 2.
  • This means that the metallization is interrupted both on the upper side 4 and on the underside 5, this interruption, as can be seen in FIGS. 1 and 2, in each case forms a strip-shaped recess 10, 11 in the metallized surface which extends up to Surface of the varistor material ranges, which is generally designated 19.
  • the strip-shaped recesses 10, 11 are delimited by two parallel edges 12, 13 which extend parallel to the edges of its upper and lower sides lying in the transverse direction of the body.
  • the chip varistor Due to this design of the chip varistor, its voltage can be set at home with a constant “base area” of the cuboid body by changing the overall height H (FIG. 2), that is to say during the manufacture of the chip varistor. This means that the voltage can be adjusted depending on the component height. It has been found through experiments that the width d of the strip-shaped recesses 10, 11 must be approximately 1.5 times the height H, since after this design, owing to the overlap of the electrodes (metallized surfaces), the current flow direction compared to only one of the the front-side cuboid ends contacted chip varistor is rotated by 90 °, the possibility of current or voltage flashovers is only given in the area of the strip-shaped recess.
  • FIG. 5 shows another embodiment of the chip varistor, in which the cuboid body is designed as a laminated body 16, consisting of a plurality of alternating layers of varistor material 17 and electrically highly conductive material 18 that run parallel to the top and bottom sides.
  • the conductive material layers 18 are in turn alternately electrically connected to one and the other metallized cuboid ends 2a and 3a.
  • a method is used to produce a chip varistor of the type shown in FIGS. 3 and 4, the steps of which are explained below with reference to FIGS. 6a, 6b and 6c.
  • the surface of the chip varistor thus produced is, with the exception of the contact areas, i.e. the front ends, covered with a protective layer.
  • the contact areas can be reinforced, for example, by nickel plating and tinning.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Thermistors And Varistors (AREA)
EP85113401A 1984-12-14 1985-10-22 Chip-Varistor und Verfahren zu seiner Herstellung Expired EP0184645B1 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AT85113401T ATE40765T1 (de) 1984-12-14 1985-10-22 Chip-varistor und verfahren zu seiner herstellung.

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19843445698 DE3445698A1 (de) 1984-12-14 1984-12-14 Chip-varistor und verfahren zu seiner herstellung
DE3445698 1984-12-14

Publications (3)

Publication Number Publication Date
EP0184645A2 EP0184645A2 (de) 1986-06-18
EP0184645A3 EP0184645A3 (en) 1987-01-28
EP0184645B1 true EP0184645B1 (de) 1989-02-08

Family

ID=6252820

Family Applications (1)

Application Number Title Priority Date Filing Date
EP85113401A Expired EP0184645B1 (de) 1984-12-14 1985-10-22 Chip-Varistor und Verfahren zu seiner Herstellung

Country Status (3)

Country Link
EP (1) EP0184645B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
AT (1) ATE40765T1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE3445698A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102006033691A1 (de) * 2006-07-20 2008-01-31 Epcos Ag Widerstandselement mit PTC-Eigenschaften und hoher elektrischer und thermischer Leitfähigkeit

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3731966C3 (de) * 1986-09-26 1995-02-09 Gen Electric Oberflächenmontierbarer Varistor
GB2242068C (en) * 1990-03-16 1996-01-24 Ecco Ltd Varistor manufacturing method and apparatus
US5973588A (en) 1990-06-26 1999-10-26 Ecco Limited Multilayer varistor with pin receiving apertures
GB2242066B (en) * 1990-03-16 1994-04-27 Ecco Ltd Varistor structures
US6183685B1 (en) 1990-06-26 2001-02-06 Littlefuse Inc. Varistor manufacturing method
DE4029681A1 (de) * 1990-09-19 1992-04-02 Siemens Ag Verfahren zum herstellen von oberflaechenmontierbaren keramischen bauelementen in melf-technologie

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2777039A (en) * 1954-06-29 1957-01-08 Standard Coil Prod Co Inc Resistor elements adapted for use in connection with printed circuits
DE1064127B (de) * 1956-02-04 1959-08-27 Blaupunkt Werke Gmbh Verfahren zur Bestueckung von sogenannten gedruckten Schaltungen mit Schaltungselementen
AT237111B (de) * 1961-12-27 1964-11-25 Elettronica Metal Lux S P A Verfahren zur Herstellung flacher, elektrischer Schaltelemente
DE2126340C3 (de) * 1971-05-24 1973-10-25 Matsushita Electric Industrial Co., Ltd., Kadoma, Osaka (Japan) Mit Elektroden versehener Dick schichtwiderstand
US3768058A (en) * 1971-07-22 1973-10-23 Gen Electric Metal oxide varistor with laterally spaced electrodes
JPS5823921B2 (ja) * 1978-02-10 1983-05-18 日本電気株式会社 電圧非直線抵抗器
DE3019969A1 (de) * 1980-05-24 1981-12-03 Philips Patentverwaltung Gmbh, 2000 Hamburg Spannungsabhaengiger widerstand und verfahren zu seiner herstellung
ATE34482T1 (de) * 1984-07-31 1988-06-15 Siemens Bauelemente Ohg Varistor in chip-bauweise zur verwendung in gedruckten schaltungen und verfahren zu seiner herstellung.

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102006033691A1 (de) * 2006-07-20 2008-01-31 Epcos Ag Widerstandselement mit PTC-Eigenschaften und hoher elektrischer und thermischer Leitfähigkeit
US7902958B2 (en) 2006-07-20 2011-03-08 Epcos Ag Resistor element with PTC properties and high electrical and thermal conductivity

Also Published As

Publication number Publication date
DE3445698C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1991-01-03
EP0184645A2 (de) 1986-06-18
DE3445698A1 (de) 1986-06-26
ATE40765T1 (de) 1989-02-15
EP0184645A3 (en) 1987-01-28

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