EP0128401B1 - Additive or subtractive chemical process - Google Patents

Additive or subtractive chemical process Download PDF

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Publication number
EP0128401B1
EP0128401B1 EP84105749A EP84105749A EP0128401B1 EP 0128401 B1 EP0128401 B1 EP 0128401B1 EP 84105749 A EP84105749 A EP 84105749A EP 84105749 A EP84105749 A EP 84105749A EP 0128401 B1 EP0128401 B1 EP 0128401B1
Authority
EP
European Patent Office
Prior art keywords
jet
plating
laser
substrate
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
EP84105749A
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German (de)
English (en)
French (fr)
Other versions
EP0128401A2 (en
EP0128401A3 (en
Inventor
Mordechai Hirsh Gelchinski
Lubomyr Taras Romankiw
Donald Richard Vigliotti
Robert Jacob Von Gutfeld
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
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International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Priority to AT84105749T priority Critical patent/ATE31087T1/de
Publication of EP0128401A2 publication Critical patent/EP0128401A2/en
Publication of EP0128401A3 publication Critical patent/EP0128401A3/en
Application granted granted Critical
Publication of EP0128401B1 publication Critical patent/EP0128401B1/en
Expired legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/02—Electroplating of selected surface areas
    • C25D5/024—Electroplating of selected surface areas using locally applied electromagnetic radiation, e.g. lasers
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/02—Electroplating of selected surface areas
    • C25D5/026—Electroplating of selected surface areas using locally applied jets of electrolyte
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F3/00—Electrolytic etching or polishing
    • C25F3/02—Etching
    • C25F3/14—Etching locally
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
    • H05K3/068—Apparatus for etching printed circuits
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/22—Secondary treatment of printed circuits
    • H05K3/24—Reinforcing the conductive pattern
    • H05K3/241—Reinforcing the conductive pattern characterised by the electroplating method; means therefor, e.g. baths or apparatus

Definitions

  • the present invention in its preferred form relates to jet-plating or jet-etching in the presence of a laser beam.
  • Laser-enhanced plating has been described in a number of recent technical publications and patents.
  • the main desirable features of laser-enhanced plating are enhanced plating rates and localization of the deposit without the use of a mask.
  • IBM U.S. Patents 4,283,259, 4,239,789 and 4,217,183 discuss the use of heating by means of a laser to enhance plating and etching rates locally.
  • U.S. Patent 3,267,014 of Sanders, "Process for Rapidly Etching a Flat-Bottomed Pit in a Germanium Wafer” describes a jet etching system which involves D.C. current passing through a jet and also uses a lamp producing incandescent light directed upon the germanium wafer to activate electrical current where the jet hits the wafer.
  • the lamp has an intensity of 500 watts, and is spaced 15 cm (six inches) from the pit. The lamp was not employed for increasing the activity level of the electrochemical reaction involved in the etching process. The light from the lamp produces electron-hole pairs.
  • the system involves no plating or thermal effects.
  • the light is directed to a mirror which reflects it coaxially with the jet of electrochemical etching fluid, it does not suggest directing the beam through the fluid, and the intensity of the beam in terms of watts per square centimeter is low relative to that of a laser beam. No suggestion of plating is made.
  • electrochemical etching illumination is used to enhance operation of an electrolytic bath to etch along grain boundaries. It does not mention a jet or plating.
  • U.S. Patent 4,340,671 of Deutsch et al, "Method and Apparatus for Depositing a Material on a Surface” relates to photochemical or photolytic dissociation of solution in a fluid or gas-filled chamber.
  • it teaches use of a gas-filled chamber into which the laser beam is directed.
  • the laser produces photodecomposition.
  • the material which is photodecomposed is deposited on the substrate. No suggestion is made of use of a jet.
  • European Patent Application EP-A1-0131367 discloses a method and apparatus for machining ceramic materials.
  • an acidic or basic (alkaline) liquid (“chemically active treatment liquid”) is provided for etching the ceramic workpiece ("substractive chemical process for a substrate") by delivering said liquid (flow rate: 1-100 cm 3 /s; flow velocity: 10-100 m/s ⁇ 1000-10000 cm/s) to the workpiece by a nozzle ("liquid-jet").
  • an energy beam is directed to the same location ("site") of the workpiece, in particular a laser or a microwave beam, to heat a small spot (size 1-10opm) of the substrate in order to facilitate etching (and consequently subsequent machining).
  • the advantage here is that patterns can be formed without application of masks to the objects being plated or etched. Plating or etching is accomplished selectively by applying a laser to spots to be plated or etched concommitantly with use of a jet to circulate the plating solution rapidly at the surface of the object to the plated. The last beam is directed so that it passes along the length of the jet of fluid which acts as an optical waveguide for the laser beam.
  • additive or substractive chemical process for a substrate using a chemically active treatment liquid, in which an energy beam is directed at the substrate to heat a site thereof, at which simultaneously a jet of said treatment liquid is directed and characterised in that the beam and jet are collinear.
  • the fluid is an electrolyte.
  • the plating or etching is performed electrochemically.
  • the jet and the laser beam are collinear but are of unequal radii, and the jet is larger in diameter than the laser beam thereby permitting a large ionic resupply surrounding a finely focussed energy beam employed for patterning (etching/plating).
  • the laser beam can have a diameter comparable to the diameter of the jet of electrolyte, in which case both the fluid and the light will strike the cathode coincidentally, i.e. in the same spot.
  • laser beams are being preferred, it is possible to employ other electromagnetic beams, microwaves and other energy beams as well under appropriate circumstances.
  • the voltage between the anode and the cathode can be applied by a power supply connected between the substrate onto which the jet and the laser are impinging and an electrode suitably positioned inside the compartment containing the nozzle.
  • This invention is a method for greatly increasing plating (etching) rates by combining laser and jet plating (etching) techniques.
  • a laser beam is directed through a free-standing jet stream of plating (etching) electrolyte solution.
  • the jet acts as a light guide (optical waveguide), trapping the light within the liquid column of the jet. This comes about when the light travels at angles with respect to the jet stream that causes total internal reflection, preventing the light from leaving the jet stream to enter the air. This effect is similar to light transmission by an optical fiber.
  • a laser beam having a diameter comparable to the diameter of the jet of electrolyte both the fluid and the light will strike the cathode coincidentally, i.e. in the same spot. Voltage between the anode and the cathode can be applied by a power supply connected between the substrate onto which the jet and the laser are impinging and an electrode suitably positioned inside the compartment containing the nozzle.
  • Processes to which the laser-jet technique of this invention can be applied include jet-enhanced and laser-enhanced electroetching, electroless etching, and electrodeless etching such as thermally-enhanced or laser-enhanced exchange etching, and jet-enhanced and laser-enhanced and laser-enhanced electroplating, electroless plating, and electrodeless plating such as thermally-enhanced or laser-enhanced exchange plating.
  • a free-standing jet is a jet of liquid electrolyte, plating or etching solution which is ejected from the nozzle into an ambient atmosphere of air or another gas, as distinguished from a submerged jet which ejects into an ambient liquid so that the jet of fluid is submerged in a liquid as it leaves the nozzle.
  • This method combines the laser-enhanced plating technique with a free-standing jet of electrolyte to obtain localized high speed gold-plated deposits on nickel-plated beryllium-copper substrates.
  • the principal advantage of a free-standing jet is its ability to provide a rapid re-supply of fresh ions into the region of plating. This overcomes the usual mass transport limited plating rates, typically occurring with many standard plating solutions giving rise to current densities as high as 0.25 Amperes/cm 2 . See Turner supra. (The Mass Transport limitation refers to situations of high plating current densities in which the mass velocity of ions delivered to a surface to be plated is too low to meet requirements, so there is a depletion of the concentration of ions at the plating surface).
  • the jet stream limits the region of plating without the use of masks and enables patterning by relative movement of the stream with respect to the substrate (cathode) to be plated.
  • Current flow is along the length of the jet except in the region of impingement of the jet on the cathode where radial electric fields and currents exist over a small region extending beyond the jet diameter. This gives rise to a thin plating background in the wall jet region, depicted in Fig. 1.1.
  • a detailed analysis of the current distribution on the cathode for a 0.5 cm diameter jet nozzle used with a free-standing jet for plating has recently been reported by Alkire and Chen, supra.
  • Fig. 1.1 shows a diagram of a free-standing jet without a laser showing the impingement regions of the jet from a nozzle orifice against a wall.
  • the jet is assumed to have a radius r. in region I as well as uniform axial velocity. Electric field varies only in the z direction. Region II is the stagnation flow region. Region III constitutes the wall jet, a thin layer of fluid which, during plating, carries very low current densities which therefore are assumed to vary only in the r direction.
  • Fig. 1.2 shows a schematic of the laser-jet system according to a first embodiment of our invention, in which a laser beam 44 is directed collinearly through an optical window 74 into the free-standing jet of fluid 21 of plating solution to provide local heating of the cathode.
  • the initial laser beam 45 is directed through a lens 43 to produce the laser beam 44 which converges to focus approximately at the center of the jet nozzle 20, after passing through quartz window 74.
  • the cathode 22 is attached to a numerically-controlled xyz table 51 via an extension arm 50. Table 51 is controlled by numerical-control unit 52.
  • the jet of fluid 21 composed of plating solution 25 both resupplies ions to be plated from the source of plating solution 25 and acts as an optical waveguide or light pipe for the laser energy of beam 44.
  • Approximately 70% of the input energy of beam 44 reaches the cathode 22 with the losses due to reflection at the window 74 and very weak absorption by the electrolyte or plating solution 25 within the jet of fluid 21, for the particular plating solution 25 used (see Table 2).
  • Basic elements of the laser-jet cell 10 are: an inlet chamber 12 containing the electrolyte (plating or etching) solution 25 maintained under pressure.
  • the chamber 12 includes a platinum, gold or stainless steel anode 16 with an aperture hold 99 through which the laser beam 44 passes.
  • the jet nozzle 20 is made from a section of capillary tube secured and sealed by being glassed into a flat pyrex glass plate 60.
  • a cathode 22 which serves as a workpiece to be electroplated is located in plating or etching chamber 24.
  • Cathode 22 is attached to a numerically-controlled x, y, z table to enable automatic and/or arbitrary movement of cathode 22 for deposition patterning, by moving it relative to the fluid jet 21.
  • the electrolyte 25 was preheated by heater 27 to 60 degrees Celsius, consistent with the solution supplier's recommended operating temperature.
  • Nozzle 20 has an orifice of 0.5 mm diameter which yields gold spots of similar diameter, a typical dimension for present day microelectronic contact areas. Additional operating parameters relevant to the cell and plating parameters are listed in Table 2 above.
  • a cw argon laser 40 produces a beam 41 with power up to 25 W.
  • beam 41 passes through a beam expander 42 yielding beam 45 which passes through lens 43 which yields beam 44 which enters the cell 10.
  • Beam 44 is focused to approximately the center of the jet orifice of nozzle 20 with a suitable optical system.
  • the wave guiding effect of the jet of fluid 21 serves to contain the expanding laser beam 44 past the focal plane located just inside the jet orifice 20, and also homogenizes the power density in the radial direction.
  • the cathode 22 is driven into the desired position by means of the xyz table 51, etc.
  • the laser 40 is then switched on followed by the application of the anode-cathode voltage from a potentiostat 15.
  • potentiostat 15 is set to operate galvanostatically, i.e., at constant current.
  • Current densities as high as 16 amps/cm 2 result in plating rates as high as about 10 micrometers per second with bright good deposits of excellent metallurgical quality.
  • rates as high as 30 micrometers/sec were achieved, indicating our plating rates with the larger nozzle are limited by the available laser power.
  • Figs. 2.1-2.3 show cross-sections of laser-jet plated gold spots on nickel plated Be-Cu substrates, 200 micrometers thick.
  • the current density is 11 amperes/cm 2.
  • the top layer is an electrodeposited nickel layer deposited to protect the gold during cross-sectioning and polishing.
  • Laser-jet plating times and resulting thicknesses are:
  • laser-jet plated spots normally contain peripheral deposition areas not subjected to laser light i.e. in the wall region which are also removed with adhesive-type tape while the central laser-plated portion remains intact.
  • the jet of electrolyte is large in diameter as contrasted to the diameter of the converging collinear laser beam.
  • the jet acts not only as a source of resupply of ions to the electrolyte, but as a uniform medium for carrying the beam to a sharp focus at the cathode (anode).
  • the jet acts not only as a source of resupply of ions to the electrolyte, but as a uniform medium for carrying the beam to a sharp focus at the cathode (anode).
  • the jet as an electromagnetic waveguide which precludes a very sharp focus as it results in a spot approximately equal in diameter to the diameter of the plating or etching jet.
  • the sharper focus of the laser beam is necessary and it would be very difficult to obtain in the waveguide form of jet of liquid.
  • the jet of fluid (free or submerged) will not act as a waveguide for the light but permit a large ion resupply moving collinearly with the focussed laser beam used for processing.
  • This technique is applicable to plating of metals such as copper, nickel, palladium, etc.
  • Fig. 4 is a sectional view of a demountable laser-cell 70 which can be employed in accordance with this invention.
  • the demountable laser-jet cell 70 permits flexibility for laser-jet plating or etching.
  • the features include a demountable quartz optical window 74 at one end of the cell.
  • the fact that it is demountable permits substitution of other such plates 60 enabling a choice of arbitrary diameter, length and material of jet nozzle 20.
  • the jet support flange 72 is adapted for mounting various materials for anode 16, compatible with the desired electrolyte 25 (plating or etching solution) required for processing.
  • An access port 94 is provided for inserting the workpiece 22 (electrode, etc.) to be processed.
  • a rear demountable window 91 is provided for easy alignment of the laser beam entering window 74 and the jet of fluid 21 passing through the orifice of nozzle 20.
  • the cell 70 includes a cylinder 71 of transparent acrylic plastic having the work access port 94 into which the cathode 22 (workpiece to be electroplated) is inserted.
  • the jet plate 60 containing the jet orifice or nozzle 20 is secured to the flange 72 by means of jet retainer flange 171, which is bolted thereto by a set of bolts 172.
  • Front flange 73 holds laser window 74.
  • Acrylic front flange 73 has a large hole 89 for window 74.
  • Holes 76 pass through flanges 73 and 72 and into the end of cylinder 71 so that an inlet chamber 12 is formed by jet plate 60, support flange 72, flange 73 and window 74.
  • the electrolyte is supplied to the inlet chamber 12 through an inlet opening 80 (Fig. 5) connected to inlet line 31 shown in Fig. 1.2.
  • Port 81 is a bleeder line to permit removal of air from the chamber 12 through a petcock (not shown) and port 82 is a drain line for the liquid when disassembling the cell to make alterations in its structure.
  • Anode 16 is secured to the wall of the jet support flange 72 by means of a threaded screw 83 which passes through the flange 72 and is secured thereto.
  • Flange 72 is composed of acrylic plastic which is an electrical insulating material.
  • the screw 83 which also connects the power to the anode 16 is electrically insulated, as required.
  • cathode 22 is suspended by support member 84 through the port 94 in the cylinder 71. Electrical connection to cathode 22 is shown by conductor line 85.
  • the drain 86 for the jet of electrolyte falling down from the cathode 22 is shown in cylinder 71.
  • To the right end of the cylinder 71 is affixed a window support flange 88 with mounting holes aligned with corresponding holes in cylinder 71 through which bolts 87 extend.
  • the transparent window 91 is held over hole 90 in support flange 88 by rear flange 92 secured to flange 88 by bolts 93.
  • Fluid-tight seals are provided by the four standard elastomeric O-rings 98 shown in the drawings. Corresponding annular grooves are provided in parts into which the O-rings are seated, in conventional manner.
  • Figs. 5.1 and 5.2 show the jet support flange 72 in end and side views respectively with the various apertures illustrated.
  • Fig. 6 shows two curves for plating rate versus current density for laser-jet plating on the upper curve and jet plating without the laser on the lower curve.
  • Autronex 55GV was used (pure gold) with laser power at 25 watts, nozzle diameter at 0.5mm, flow rate at 2.15 cm 3 /second, and bath temperature at 60 degrees Celsius.
  • Fig. 7.1 shows an example of bilevel plating.
  • a substrate 200 is shown with a jet-plating jet 204 directed onto a spot on the substrate 200 where a thickness 202 of gold is plated.
  • a laser beam 205 collinearly which results in a thicker deposit 203 of gold.
  • Fig. 7.2 shows an example of bilevel etching.
  • a substrate 300 is shown with a jet-etching jet 304 directed onto a spot on the substrate 300 where a hole 302 is etched in substrate 300.
  • a laser beam 305 collinearly which results in a deeper hole 303.
  • the invention can also be employed where the electrolyte used is adapted for photolytic decomposition for either etching or plating.
  • the photolytic plating or etching can be employed either with or without an external source of electrical potential.
  • plating and etching are intended to include chemical deposition or removal of material.
  • the energy beam or laser In order for the energy beam to provide the type of heating required for heating the substrate as described above, the energy beam or laser must be adapted to provide an energy of at least about 10 2 Watts per square centimeter on the surface to be treated in accordance with this invention.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electrochemistry (AREA)
  • Electromagnetism (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Weting (AREA)
  • ing And Chemical Polishing (AREA)
  • Chemically Coating (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Heterocyclic Carbon Compounds Containing A Hetero Ring Having Oxygen Or Sulfur (AREA)
EP84105749A 1983-06-13 1984-05-21 Additive or subtractive chemical process Expired EP0128401B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AT84105749T ATE31087T1 (de) 1983-06-13 1984-05-21 Chemisches additions- oder substraktionsverfahren.

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/504,016 US4497692A (en) 1983-06-13 1983-06-13 Laser-enhanced jet-plating and jet-etching: high-speed maskless patterning method
US504016 1995-07-19

Publications (3)

Publication Number Publication Date
EP0128401A2 EP0128401A2 (en) 1984-12-19
EP0128401A3 EP0128401A3 (en) 1985-05-15
EP0128401B1 true EP0128401B1 (en) 1987-11-25

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Family Applications (1)

Application Number Title Priority Date Filing Date
EP84105749A Expired EP0128401B1 (en) 1983-06-13 1984-05-21 Additive or subtractive chemical process

Country Status (8)

Country Link
US (1) US4497692A (ja)
EP (1) EP0128401B1 (ja)
JP (1) JPS6122633A (ja)
AT (1) ATE31087T1 (ja)
CA (1) CA1259947A (ja)
DE (1) DE3467779D1 (ja)
ES (1) ES8606525A1 (ja)
IE (1) IE55633B1 (ja)

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DE102006003606A1 (de) * 2006-01-25 2007-07-26 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren und Vorrichtung zum Strukturieren einer Oberflächenschicht

Families Citing this family (60)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0261296B1 (fr) * 1986-09-25 1992-07-22 Laude, Lucien Diégo Appareillage pour le dépôt électrolytique ponctuel assisté par laser de métaux sur des solides
JPH01149324A (ja) * 1987-12-04 1989-06-12 Yazaki Corp 高圧ケーブルの製造方法
JP2585784B2 (ja) * 1989-02-03 1997-02-26 株式会社東芝 自動現像装置および方法
US5292418A (en) * 1991-03-08 1994-03-08 Mitsubishi Denki Kabushiki Kaisha Local laser plating apparatus
JP2896726B2 (ja) * 1992-03-30 1999-05-31 セイコーインスツルメンツ株式会社 微細加工装置
DE4229399C2 (de) * 1992-09-03 1999-05-27 Deutsch Zentr Luft & Raumfahrt Verfahren und Vorrichtung zum Herstellen einer Funktionsstruktur eines Halbleiterbauelements
DE4408660A1 (de) * 1993-10-26 1995-04-27 Bayer Ag Mischungen mit selbstschmierenden Eigenschaften
US5641391A (en) * 1995-05-15 1997-06-24 Hunter; Ian W. Three dimensional microfabrication by localized electrodeposition and etching
US5536388A (en) * 1995-06-02 1996-07-16 International Business Machines Corporation Vertical electroetch tool nozzle and method
US6284108B1 (en) 1998-08-31 2001-09-04 Louis DiFrancesco Method and apparatus for momentum plating
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US7294366B2 (en) * 1998-09-30 2007-11-13 Optomec Design Company Laser processing for heat-sensitive mesoscale deposition
US7045015B2 (en) 1998-09-30 2006-05-16 Optomec Design Company Apparatuses and method for maskless mesoscale material deposition
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US7108894B2 (en) * 1998-09-30 2006-09-19 Optomec Design Company Direct Write™ System
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US20030020768A1 (en) * 1998-09-30 2003-01-30 Renn Michael J. Direct write TM system
US20050156991A1 (en) * 1998-09-30 2005-07-21 Optomec Design Company Maskless direct write of copper using an annular aerosol jet
US20010054706A1 (en) * 1999-07-19 2001-12-27 Joseph A. Levert Compositions and processes for spin etch planarization
DE19963824A1 (de) * 1999-12-30 2001-07-19 Wacker Siltronic Halbleitermat Verfahren und Vorrichtung zum Bearbeiten von Halbleitermaterial
DE60115891T2 (de) * 2000-06-13 2006-06-14 Element Six Pty Ltd Verbunddiamantkörper
US6699356B2 (en) 2001-08-17 2004-03-02 Applied Materials, Inc. Method and apparatus for chemical-mechanical jet etching of semiconductor structures
US6683277B1 (en) * 2002-12-20 2004-01-27 Osram Opto Semiconductors Laser ablation nozzle assembly
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US20070154634A1 (en) * 2005-12-15 2007-07-05 Optomec Design Company Method and Apparatus for Low-Temperature Plasma Sintering
JP5017882B2 (ja) * 2006-02-22 2012-09-05 澁谷工業株式会社 ハイブリッドレーザ加工方法
DE102006030588A1 (de) * 2006-07-03 2008-01-10 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Flüssigkeitsstrahlgeführtes Ätzverfahren zum Materialabtrag an Festkörpern sowie dessen Verwendung
CN100388997C (zh) * 2006-09-18 2008-05-21 南京航空航天大学 喷射液束电解-激光复合加工方法及其装置
WO2008070786A1 (en) * 2006-12-06 2008-06-12 The Trustees Of Columbia University In The City Of New York Microfluidic systems and methods for screening plating and etching bath compositions
US8530784B2 (en) * 2007-02-01 2013-09-10 Orbotech Ltd. Method and system of machining using a beam of photons
US20100310630A1 (en) * 2007-04-27 2010-12-09 Technische Universitat Braunschweig Coated surface for cell culture
TWI482662B (zh) * 2007-08-30 2015-05-01 Optomec Inc 機械上一體式及緊密式耦合之列印頭以及噴霧源
TWI538737B (zh) * 2007-08-31 2016-06-21 阿普托麥克股份有限公司 材料沉積總成
TW200918325A (en) * 2007-08-31 2009-05-01 Optomec Inc AEROSOL JET® printing system for photovoltaic applications
US8887658B2 (en) * 2007-10-09 2014-11-18 Optomec, Inc. Multiple sheath multiple capillary aerosol jet
FR2941156A1 (fr) * 2009-01-19 2010-07-23 Cummins Filtration Dispositif de filtration pour liquide circulant dans un moteur ou un equipement hydraulique, comprenant des moyens de chauffage du liquide jouxtant les moyens de filtration
JP4961468B2 (ja) * 2009-10-29 2012-06-27 三星ダイヤモンド工業株式会社 レーザー加工方法、被加工物の分割方法およびレーザー加工装置
US8985050B2 (en) * 2009-11-05 2015-03-24 The Trustees Of Columbia University In The City Of New York Substrate laser oxide removal process followed by electro or immersion plating
US9583125B1 (en) 2009-12-16 2017-02-28 Magnecomp Corporation Low resistance interface metal for disk drive suspension component grounding
US9025285B1 (en) 2009-12-16 2015-05-05 Magnecomp Corporation Low resistance interface metal for disk drive suspension component grounding
JP5220914B2 (ja) 2011-05-25 2013-06-26 株式会社スギノマシン レーザー加工装置
US8764515B2 (en) * 2012-05-14 2014-07-01 United Technologies Corporation Component machining method and assembly
CN103572341B (zh) * 2013-09-23 2016-01-20 江苏大学 激光光管电极的电化学复合沉积制造方法与装置
CN103590080A (zh) * 2013-11-28 2014-02-19 铜陵学院 一种激光强化喷射电沉积快速成形加工装置及方法
US10092980B1 (en) 2014-05-30 2018-10-09 Avonisys Ag Method for coupling a laser beam into a liquid-jet
US8859988B1 (en) * 2014-05-30 2014-10-14 Jens Guenter Gaebelein Method for coupling a laser beam into a liquid-jet
KR102444204B1 (ko) 2015-02-10 2022-09-19 옵토멕 인코포레이티드 에어로졸의 비행 중 경화에 의해 3차원 구조를 제조하는 방법
DE102015224115B4 (de) * 2015-12-02 2021-04-01 Avonisys Ag Laserstrahl-bearbeitungsvorrichtung mit einer einkoppelvorrichtung zum einkoppeln eines fokussierten laserstrahls in einen flüssigkeitsstrahl
EP3723909B1 (en) 2017-11-13 2023-10-25 Optomec, Inc. Shuttering of aerosol streams
EP3624571A1 (en) * 2018-09-14 2020-03-18 Nederlandse Organisatie voor toegepast- natuurwetenschappelijk onderzoek TNO A process for the manufacturing of printed conductive tracks on an object and 3d printed electronics
CN113512741B (zh) * 2020-04-10 2022-11-01 中国科学院宁波材料技术与工程研究所 激光冲击波辅助的电化学加工装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0131367A1 (en) * 1983-05-30 1985-01-16 Inoue-Japax Research Incorporated Method of and apparatus for machining ceramic materials

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2846346A (en) * 1954-03-26 1958-08-05 Philco Corp Semiconductor device
US2799637A (en) * 1954-12-22 1957-07-16 Philco Corp Method for electrolytic etching
US2930949A (en) * 1956-09-25 1960-03-29 Philco Corp Semiconductive device and method of fabrication thereof
US3039515A (en) * 1959-02-24 1962-06-19 Philco Corp Fabrication of semiconductor devices
US3345274A (en) * 1964-04-22 1967-10-03 Westinghouse Electric Corp Method of making oxide film patterns
US3486221A (en) * 1967-06-14 1969-12-30 Sprague Electric Co High energy beam trimming of electrical components
GB1242123A (en) * 1968-11-12 1971-08-11 Nat Res Dev Improvements relating to a method and apparatus for laser beam cutting
US3810829A (en) * 1972-06-28 1974-05-14 Nasa Scanning nozzle plating system
US4042006A (en) * 1973-01-05 1977-08-16 Siemens Aktiengesellschaft Pyrolytic process for producing a band-shaped metal layer on a substrate
US3965328A (en) * 1974-12-19 1976-06-22 Avco Corporation Laser deep cutting process
US4283259A (en) * 1979-05-08 1981-08-11 International Business Machines Corporation Method for maskless chemical and electrochemical machining
US4217183A (en) * 1979-05-08 1980-08-12 International Business Machines Corporation Method for locally enhancing electroplating rates
DE3111402A1 (de) * 1980-03-25 1982-04-29 Walter Winston Duley "verfahren und vorrichtung zur laserstrahl-bearbeitung von werkstuecken"
GB2074074B (en) * 1980-04-17 1984-07-11 Inoue Japax Res Electrical discharge machining with controlled liquid machining medium flow

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0131367A1 (en) * 1983-05-30 1985-01-16 Inoue-Japax Research Incorporated Method of and apparatus for machining ceramic materials

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102006003606A1 (de) * 2006-01-25 2007-07-26 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren und Vorrichtung zum Strukturieren einer Oberflächenschicht

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ES533329A0 (es) 1986-04-01
US4497692A (en) 1985-02-05
ES8606525A1 (es) 1986-04-01
CA1259947A (en) 1989-09-26
JPS6122633A (ja) 1986-01-31
EP0128401A2 (en) 1984-12-19
EP0128401A3 (en) 1985-05-15
IE55633B1 (en) 1990-12-05
DE3467779D1 (en) 1988-01-07
JPH0138372B2 (ja) 1989-08-14
IE841438L (en) 1984-12-13

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