EP0105661A1 - Dispositif pour tester une configuration de circuit tracé sur un photomasque utilisé pour la fabrication de circuits intégrés à grande échelle - Google Patents

Dispositif pour tester une configuration de circuit tracé sur un photomasque utilisé pour la fabrication de circuits intégrés à grande échelle Download PDF

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Publication number
EP0105661A1
EP0105661A1 EP83305534A EP83305534A EP0105661A1 EP 0105661 A1 EP0105661 A1 EP 0105661A1 EP 83305534 A EP83305534 A EP 83305534A EP 83305534 A EP83305534 A EP 83305534A EP 0105661 A1 EP0105661 A1 EP 0105661A1
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EP
European Patent Office
Prior art keywords
data
measured
photomask
measured point
measuring
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Granted
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EP83305534A
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German (de)
English (en)
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EP0105661B1 (fr
Inventor
Ryoichi Yoshikawa
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Toshiba Corp
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Toshiba Corp
Tokyo Shibaura Electric Co Ltd
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Publication of EP0105661A1 publication Critical patent/EP0105661A1/fr
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • G03F1/84—Inspecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26

Definitions

  • the present invention relates to an apparatus for inspecting a circuit pattern drawn on a photomask (reticle) used in manufacturing large scale integrated circuits (LSIs).
  • a photomask reticle
  • LSIs large scale integrated circuits
  • the design data is converted to data of dots each having the same size as the measured pixel which depends upon the size of an image sensor element.
  • a measured value from the image sensor element is given in the form of binary data and is compared with the design data in units of dots.
  • the measured point on the photomask measured by the image sensor element can only be expressed in units of dots. Intermediate measured values are rounded off to "1" or "0" for bi-level quantization. Therefore, the determination of a pattern defect is made only when a difference between the design data and the measured data exists with respect to 2 or 3 consecutive dots, allowing for measurement errors.
  • the pixel size of the design pattern data must be converted for each of photomasks which have different scaling factors.
  • the size of the pixel to be measured must be decreased.
  • the rate at which the photomask is scanned by the image sensor must be high, inversely proportional to the square of the pixel size, resulting in serious problems.
  • a circuit pattern drawn on a photomask (reticle) placed on a measuring table is optically measured by an optical pattern measuring means in the direction perpendicular to a table moving direction to provide analog measured signals at measured points on the mask, and the analog measured signal is converted to multi-level digital data by an analog-to-digital converter.
  • a measured point calculation circuit calculates the position of each measured point in units smaller than the pixel size in accordance with table position data from a table position measuring means.
  • a reference data calculation circuit means which calculates reference data which is to be obtained when the design circuit pattern is measured at each measured point on the basis of design pattern data of a two-dimensional pixel array having at its center a pixel which includes the measured point, position data of the measured point, and sensitivity distribution characteristic data (including resolution characteristics of a lens) of an image sensor element of the optical pattern measuring means.
  • the reference data is given as multi-level digital data. The measured data is compared with the reference data to detect any defect in the circuit pattern.
  • a photomask (reticle) 1 on which an LSI circuit pattern is drawn by an electron- beam patterning apparatus is placed on an x-y table 2.
  • the photomask 1 is illuminated by a light source 3 through a condenser lens 4.
  • the circuit pattern on the photomask 1 illuminated by the light source 3 is imaged by an objective 6 on a linear image sensor 5 which has a number of sensor elements such as photodiodes.
  • the objective 6 is disposed under the x-y table 2.
  • the linear image sensor 5 is disposed to measure the mask pattern along the x-axis.
  • the linear image sensor 5 is arranged to measure the intensity of light transmitted at each of the measured points of the photomask along the x-axis, by electrically scanning e.g., 512 image sensor elements, to produce analog measured signals.
  • the mask-pattern measurement is carried out by the fixed linear image sensor 5 while the table 2 is continuously driven along the y-axis by a table drive circuit 8 which is controlled by a computer 7.
  • the photomask 1 is divided into a plurality of stripe areas (referred to as "frames" hereinafter) 21, 22,... extending along the y-axis for measurement purposes.
  • the mask-pattern measurement is carried out for each frame.
  • the linear image sensor 5 has a length equal to or slightly greater than the width of each frame along the x-axis. Dotted arrows indicate the direction of movement of table 2. For example, when the frame 21 is measured, the table 2 is continuously driven in the positive direction of the y-axis.
  • the table 2 is moved by a distance corresponding to the width of the frame in the positive direction of the x-axis. Thereafter, the table 2 is moved in the negative direction of the y-axis to measure the frame 22. In this manner, the entire area of photomask 1 is measured.
  • Reference numeral 26 in Fig. 2 denotes an origin or reference point with respect to which the table position is measured.
  • Reference numerals 27 and 28 denote start positions of the frames 21 and 22, respectively.
  • a typical size of the photomask 1 is 5 inches x 5 inches.
  • An analog-to-digital (A/D) converter 9 electrically scans the image sensor 5 to derive an analog measured signal for each measured point in synchronism with the reference clock signal of the present apparatus, and converts the analog signal to multi-level digital data (e.g., 6 bits).
  • the A/D converter 9 supplies a scanning start sync signal to a measured point calculation circuit 10 and a digital measured signal to a defect detect circuit 11.
  • the measured point calculation circuit 10 receives table position data from a table position measurement circuit (laser interferometric measuring system) 12 in ' synchronism with the scanning start sync signal and t calculates, the position of each measured point on the photomask 1 being measured by an image sensor element of the image sensor 5 in synchronism with the reference clock signal, using position calculating parameters, to be described later, supplied from the computer 7.
  • the position of a measured point which is calculated by the measured point calculation circuit 10 corresponds to the position on the photomask 1 of the measured signal which is being obtained from the image sensor 5 and the A/D converter 9.
  • the position data calculated by the measured point calculation circuit 10 is supplied to a reference data calculation circuit 13.
  • the reference data calculation circuit 13 receives from the computer 7 design pattern data representing the design pattern on the photomask 1 in the form of binary data for each pixel, and calculates a measured value (reference data) which is to be obtained from image sensor 5 when the design pattern is measured at each of the measured points, taking sensitivity distribution characteristics (including resolution characteristics of lens) into account, thereby providing 6-bit multi-level reference data.
  • the defect detect circuit 11 compares the measured data from the A/D converter 9 with the reference data from the reference data calculation circuit 13. When a difference between the measured data and the reference data is greater than a specified threshold value, a defect in the mask pattern is detected.
  • the measured point calculation circuit 10 will now be described with reference to Fig. 3.
  • the measured point calculation circuit 10 receives from the computer 7 position calculation parameters such as start position data (x- and y-axes) of a frame of the mask 1, sensor pitch data (x-axis) of the image sensor 5, a 6 correction value (y-axis), and a reticle inclination correction value.
  • the frame start position data indicates the start position 27 or 28 of each frame,as shown in F ig. 2 and is supplied from computer 7 at the start time of each frame measurement.
  • the sensor pitch data indicates the x-axis pitch of the sensor elements of the image sensor 5. Due to the pitch data the point to be measured by image sensor 5 is shifted by pitches in the x-axis direction. When the size of the sensor element is 1.4 pm x 1.4 ⁇ m, the pitch data may be given by 1.4 pm.
  • the 6 correction value is used to correct y-axis position error during pattern measurement. Since the table 2 is continuously moved in the y-axis direction during pattern measurement, a displacement vT along the y-axis occurs between the scanning start position and the scanning end position as shown in Fig. 4, where v is a constant speed of the table 2, and T is the scanning time. Therefore, errors occur in the y-position data of the measured points on the photomask 1. In order to eliminate the positional errors along the y-axis, a predetermined 6 correction value is added to the y-position data of each measured point.
  • the calculation of measured positions is carried out taking the pixel size of design data as a reference unit.
  • the measuring unit of the table position measuring circuit and the position calculating parameters set to the measured point calculation circuit are correspondingly adjusted so that the output of the measured point calculation circuit represents the number of pixels from the frame start position to the measured point.
  • the shape of sensitivity distribution characteristics of an image sensor element is also modified in accordance with the pixel size.
  • the current position data X, Y of the table 2 with respect to the origin 26 are supplied from the table position measurement circuit 12 to registers 310 and 311, respectively. These position data are latched in the registers 310 and 311 in synchronism with the scanning start sync signal. The latched data indicates the measuring position of the first sensor element of the image sensor 5.
  • the start position data of a frame to be measured is supplied from computer 7 to registers 312 and 313.
  • the difference between data latched in the registers 310 and 312 is calculated by a subtractor 314. This difference indicates the distance from the frame start position to the measuring point of the first sensor element along the x-axis.
  • the reticle angle correction value proportional to the y-position data is added by an adder 315 to an output of the subtractor 314.
  • An output of the adder 315 is supplied to an x-position register 317 through a selector 316.
  • the register 317 latches input data in synchronism with the reference clock signal.
  • the output of the adder 315 is latched in the position register 317 as the x-position data (initial value) of the measuring point of the first sensor element.
  • the sensor pitch data is supplied from the computer 7 to a register 318, and then added by an adder 319 to the output data of the position register 317.
  • the output data of adder 319 is supplied to the position register 317 through the selector 316.
  • the selector 316 selects the output of the adder 319.
  • the x-position data of the measuring points of the sensor elements are sequentially latched in the position register 317 during each frame-scanning operation of image sensor 5.
  • a difference between data latched in the registers 311 and 313 is calculated by a subtractor 320.
  • This difference indicates a distance between the measuring point of the first sensor element at the scanning start time and the frame start position along the y-axis and has a different sign (positive or negative) in accordance with the direction of table movement along the y-axis. As shown in Fig. 2, the difference is positive when the frame 21 is being measured. However, the difference is negative when the frame 22 is being measured.
  • a polarity converter 321 is provided to convert a negative difference value to a positive difference value.
  • An output of the polarity converter 321 is latched, as the y-position data (initial value) of the measuring point of the first sensor element, in a y-position register 323 through a selector 322 in synchronism with the reference clock signal.
  • the selector 322 applies an output of an adder 325 to the position register 323.
  • the ⁇ correction value is supplied from the computer 7 to a register 324.
  • the adder 325 adds the correction value to the output of the y-position register 323. Therefore, the position register 323 sequentially provides y-position data of the measured points on the mask along the x-axis.
  • the reticle inclination correction value is supplied from the computer 7 to a register 326, and this correction value is multiplied, in a multiplier 327, by the y-position initial value from the subtractor 320 at the scanning start time.
  • the multiplier 327 thus provides an angle correction value which varies with the y-position. This angle correction value is added by the adder 315 to the x-position initial value from the subtractor 314, thereby accomplishing reticle inclination correction.
  • the table position measurement circuit 12 is arranged to measure the table position to a precision of 1/10 the pixel size (e.g., 1 ⁇ m x 1 ⁇ m) of the photomask.
  • the position data (X 0 , Y 0 ) provided by the x- and y-position registers 317 and 323 indicates the measured position more accurately than the pixel size.
  • the pixel size of the design data is taken as a reference unit.
  • the calculated position data X 0 , Y O indicate the number of pixels from the frame start position.
  • the position data (X 0 , Y 0 ) specify not only a pixel on the photomask 1 but also the measured point (x 0 , y 0 ) within this pixel.
  • the reference data calculation circuit 13 calculates a value (reference data) which is to be obtained as the measured data when a design pattern having no defect is measured at the measured position calculated by the measured point calculating circuit 10.
  • the reference data is calculated taking the sensitivity distribution characteristics of the sensor elements as shown in Fig. 5 into consideration.
  • reference numeral 51 denotes the physical shape of a sensor element.
  • the sensor element has a size of 1.4 ⁇ m x 1.4 pm, for instance.
  • the sensor element has such sensitivity distribution characteristics as indicated by curves 52 and 53 due to light-scattering and lens resolution characteristics.
  • the curve 52 indicates a sensitivity distribution characteristic f(x) along the x-axis
  • the curve 53 indicates a sensitivity distribution characteristic g(y) along the y-axis.
  • the sensor element used in this embodiment produces a value obtained by integrating the input illuminance with respect to scanning time.
  • the y-axis sensitivity distribution is expanded along the y-axis as indicated by a dotted line 54 and given as follows: where g(y) is the function represented by curve 53, v is the table speed, and T is the scanning time. Therefore, vT indicates the distance by which the table moves during the scanning period. It should be noted that each sensor element has a sensitivity distribution extending over an area larger than the size of the sensor element.
  • Fig. 6 is a diagram for explaining the calculation processing effected by the reference data calculation circuit 13.
  • Point A is a measured point on the mask which is calculated by the measured point calculation circuit 10.
  • Reference symbol B in Fig. 6 denotes a design pattern.
  • the design pattern B is represented by P(x, y) on the same coordinates as the sensitivity characteristics of the sensor element.
  • the design pattern P(x, y) is a binary function which indicates a light-transmissive portion by "1" and a light-non-transmissive portion by "0".
  • a value R to be obtained from a sensor element measuring the point A can be calculated as follows: where k is a correction coefficient for matching the calculated value with the measured value.
  • Equation (2) indicates the processing that is to be performed by the reference data calculation circuit 13.
  • the calculation of reference data using equation (2) requires a complicated circuit arrangement of the calculation circuit (13).
  • the integration range is limited to an effective range.
  • the integration range is assumed to be within a 5 x 5 pixel (dot) array as shown in Fig. 7.
  • Each side of a pixel is 1 pm, and the values of x and y at a measured point are given in units of 0.1 ⁇ m.
  • the pixel, including the measured point, is represented as P(0, 0), and the measured point with respect to the upper left corner of the pixel P(0, 0) is given as (x 0 , y 0 ).
  • Equation (3) can be approximated as follows: Equation (4) indicates that the pixel (dot) P(0, 0) is divided into 10 x 10 subpixels, and that the sensitivity distribution characteristic F(x, y) of the sensor element centered at the measured point (x 0 , y 0 ) is assigned to each of the subpixels.
  • an output of the sensor element for measuring the measured point (x 0 , y 0 ) may be calculated by the reference data calculation circuit 13 as follows: where R ij is a function of x o , y 0 , i, j, and P(i, j); i and j indicate the position of a pixel within the 5 x 5 dot array; x 0 and y 0 indicate the position of the measured point within the pixel; and P(i, j) is a binary pattern ("1" or "0") of the pixel.
  • Equation (6) may be rewritten as follows:
  • the measured point calculation circuit 10 specifies one pixel (corresponding to P(0, 0)) on the photomask and a measured point (x 0 , y 0 ) within the pixel.
  • the reference data R for the measured point (x 0 , y 0 ) within the pixel P(0, 0) can be found by calculating (x 0 , y 0 , i, (i)) using five-pixel data (i) for each of columns of 5 x 5 pixel array and adding together calculated for each column.
  • the binary design pattern data is supplied from the computer 7 to a pattern data memory 81 in units of pixels.
  • the data of 1 ⁇ m-unit (pixel size unit) in the calculated position data (X 0 , Y O ) is supplied as an address signal to the data memory 81.
  • the design pattern data of the 5 x 5 pixel array centered at the designated pixel (P(0, 0)) is read out from the data memory 81.
  • Pattern data (-2), (-1), (0), (1) and (2) in the five columns are supplied as address signals to submemories 82 to 86, respectively.
  • the position data X 0 and Y 0 of the measured point calculated by the measured point calculation circuit 10 in units of 0.1 ⁇ m (1/10 unit of pixel size) are supplied as address signals to the submemories 82 to 86.
  • (x 0 , y 0 , i, (i)) has been calculated in advance by the computer 7 for the entire circuit pattern.
  • (x 0 y 0 , -2, (-2)) (x 0 , y 0 , -1, (-1)), (x 0 , y 0 , 0, (0)), (x 0 , y 0 , 1, 1)) and (x 0 , y 0 2, (2)) are stored in the submemories 82 to 86, respectively.
  • the pixel size of the photomask is assumed to be 1 ⁇ m x 1 ⁇ m.
  • the table position measuring circuit 12 measures the position of the measuring table 2 in units of 0.09 pm.
  • the sensor pitch data and ⁇ correction value set to the measured point colculation circuit 10 may be 1.4/0.9 pm and ⁇ /0.9, respectively.
  • the sensitivity distribution characteristic data of image sensor element used in the reference data calculation circuit 13 may be divided in units of 0.9/10 ⁇ m.
  • the defect detect circuit 11 will now be described with reference to Fig. 9.
  • Defect detection threshold values - ⁇ and + ⁇ are supplied from the computer 7 to registers 91 and 92, respectively.
  • the difference A between the reference data and the measured data is obtained by a subtractor 93.
  • the difference A is compared by a comparator 94 with the defect detection threshold value +e.
  • a > +e a defect signal of logic level "1" is produced from the comparator 94 to indicate the presence of a light-transmitting (white) defect on the pattern.
  • the difference A is also compared by a comparator 95 with the defect detection threshold value -e.
  • defect signal of logic level "1" is produced from the comparator 95 to indicate the presence of a black (opaque) defect on the pattern.
  • defect signals are supplied to the computer 7.
  • the defect detection values +e and -e are preset to prevent any erroneous detection caused by a noise component of the measured signal and a positioning error.
  • the operation of the defect detection circuit 11 will be briefly described with reference to Figs. 10(A) to 10(E).
  • Fig. 10(A) measured digital data as shown in Fig. 10(B) is taken from the A/D converter 9.
  • the reference data calculation circuit 13 provides the reference data (Fig. 10(C)) corresponding to the design pattern.
  • an output signal shown in Fig. 10(D) is produced from the subtractor 83 of the defect circuit 11.
  • the comparator 95 produces the defect signal, as shown in Fig. 10(E), to indicate the presence of the black (opaque) defect in the light-transmitting portion.
  • the A/D converter 9 is arranged as shown in Fig. 11.
  • An A/D converter 111 converts a measured signal Si to digital data in synchronism with a reference clock signal. From this digital data is subtracted in a subtractor 112 an offset value supplied from the computer 7 and stored in an offset register 113. The negative data from the subtractor 112 which may be caused by noise is rounded off to zero by a zero clip circuit 114.
  • Multiplication coefficients depending on the variation in sensor element sensitivity and the irregularity of quantity of light along the x-axis is supplied from the computer 7 to a coefficient memory 115 and is stored therein.
  • the output data of the subtractor 112 is multiplied in a multiplier l16 by the corresponding coefficient from the coefficient memory 114, thereby obtaining a compensated measured data S 0 .
  • the linear image sensor is used.
  • the mask pattern may be scanned with a laser beam spot, and transmitted light may be measured.
  • the shape of the laser spot and the distribution of the amount of light within the spot may be taken into consideration in calculating the reference data.

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Length Measuring Devices By Optical Means (AREA)
EP83305534A 1982-10-05 1983-09-20 Dispositif pour tester une configuration de circuit tracé sur un photomasque utilisé pour la fabrication de circuits intégrés à grande échelle Expired EP0105661B1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP57173980A JPS5963725A (ja) 1982-10-05 1982-10-05 パタ−ン検査装置
JP173980/82 1982-10-05

Publications (2)

Publication Number Publication Date
EP0105661A1 true EP0105661A1 (fr) 1984-04-18
EP0105661B1 EP0105661B1 (fr) 1986-12-10

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EP83305534A Expired EP0105661B1 (fr) 1982-10-05 1983-09-20 Dispositif pour tester une configuration de circuit tracé sur un photomasque utilisé pour la fabrication de circuits intégrés à grande échelle

Country Status (5)

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US (1) US4559603A (fr)
EP (1) EP0105661B1 (fr)
JP (1) JPS5963725A (fr)
DD (1) DD212619A5 (fr)
DE (1) DE3368349D1 (fr)

Cited By (8)

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EP0132122A2 (fr) * 1983-07-15 1985-01-23 Kabushiki Kaisha Toshiba Appareil pour l'inspection de masques utilisés dans la réalisation de circuits intégrés à haute densité
EP0143004A2 (fr) * 1983-11-24 1985-05-29 Kabushiki Kaisha Toshiba Appareil pour l'inspection de masques servant à la fabrication de circuits intégrés
GB2169077A (en) * 1984-11-20 1986-07-02 Dennis Rosen Measurement of position of a line
AT392857B (de) * 1987-07-13 1991-06-25 Ims Ionen Mikrofab Syst Vorrichtung und verfahren zur inspektion einer maske
EP0572804A1 (fr) * 1992-05-06 1993-12-08 RHEINMETALL JENOPTIC OPTICAL METROLOGY GmbH Dispositif pour le balayage avec précision et en haute définition d'images de grandes dimensions
WO1999054785A1 (fr) * 1998-04-21 1999-10-28 Leica Microsystems Wetzlar Gmbh Procede pour la mesure du positionnement de structures sur une surface de masquage
DE19825518A1 (de) * 1998-06-08 1999-12-16 Fresenius Ag Vorrichtung zur Messung von Parameteränderungen an lichtdurchlässigen Objekten
GB2361309A (en) * 1999-12-16 2001-10-17 Nec Corp Pattern inspection method and device

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DE3540100A1 (de) * 1985-11-12 1987-06-11 Mania Gmbh Verfahren zur optischen pruefung von leiterplatten
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JP2504951B2 (ja) * 1986-05-15 1996-06-05 東芝機械株式会社 パタ−ン検査方法
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US4845558A (en) * 1987-12-03 1989-07-04 Kla Instruments Corporation Method and apparatus for detecting defects in repeated microminiature patterns
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JPH04177111A (ja) * 1990-11-13 1992-06-24 Mitsubishi Electric Corp 位相シフトマスク検査装置
US5198878A (en) * 1990-11-30 1993-03-30 International Business Machines Corporation Substrate machining verifier
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JP2985323B2 (ja) * 1991-03-04 1999-11-29 株式会社日立製作所 パターン検査方法及びその装置
JPH0728226A (ja) * 1993-04-30 1995-01-31 Internatl Business Mach Corp <Ibm> 領域的イメージを測定する装置及び方法
USH1616H (en) * 1994-05-31 1996-12-03 Minnesota Mining And Manufacturing Company Web inspection system having enhanced video signal preprocessing
US5744381A (en) * 1995-03-13 1998-04-28 Kabushiki Kaisha Toshiba Method of inspecting a pattern formed on a sample for a defect, and an apparatus thereof
JPH09218163A (ja) * 1996-02-13 1997-08-19 Horiba Ltd 異物検査装置における信号処理方法
US5917932A (en) * 1997-06-24 1999-06-29 International Business Machines Corporation System and method for evaluating image placement on pre-distorted masks
DE19826923A1 (de) * 1997-12-18 1999-12-23 Josef Graf Vorrichtung zur Energieversorgung von tragbaren Elektrogeräten
JP3283836B2 (ja) * 1998-08-31 2002-05-20 日本電気株式会社 レチクル外観検査装置の画像アライメント方法
JP2002310929A (ja) * 2001-04-13 2002-10-23 Mitsubishi Electric Corp 欠陥検査装置
US6894774B2 (en) * 2001-08-10 2005-05-17 Hoya Corporation Method of defect inspection of graytone mask and apparatus doing the same
JP3904419B2 (ja) * 2001-09-13 2007-04-11 株式会社日立製作所 検査装置および検査システム
JP3647416B2 (ja) * 2002-01-18 2005-05-11 Ｎｅｃエレクトロニクス株式会社 パターン検査装置及びその方法
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Cited By (16)

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Publication number Priority date Publication date Assignee Title
EP0132122A3 (en) * 1983-07-15 1985-09-18 Kabushiki Kaisha Toshiba Apparatus for inspecting mask for use in manufacturing large scale integrated circuits
EP0132122A2 (fr) * 1983-07-15 1985-01-23 Kabushiki Kaisha Toshiba Appareil pour l'inspection de masques utilisés dans la réalisation de circuits intégrés à haute densité
EP0143004B1 (fr) * 1983-11-24 1992-04-29 Kabushiki Kaisha Toshiba Appareil pour l'inspection de masques servant à la fabrication de circuits intégrés
US4623256A (en) * 1983-11-24 1986-11-18 Kabushiki Kaisha Toshiba Apparatus for inspecting mask used for manufacturing integrated circuits
EP0143004A2 (fr) * 1983-11-24 1985-05-29 Kabushiki Kaisha Toshiba Appareil pour l'inspection de masques servant à la fabrication de circuits intégrés
GB2169077A (en) * 1984-11-20 1986-07-02 Dennis Rosen Measurement of position of a line
US4781463A (en) * 1984-11-20 1988-11-01 Birkbeck College Method and apparatus for use in measurement of the position of a line or edge of an object
GB2169077B (en) * 1984-11-20 1989-06-07 Dennis Rosen Method and apparatus for use in measurement
AT392857B (de) * 1987-07-13 1991-06-25 Ims Ionen Mikrofab Syst Vorrichtung und verfahren zur inspektion einer maske
EP0572804A1 (fr) * 1992-05-06 1993-12-08 RHEINMETALL JENOPTIC OPTICAL METROLOGY GmbH Dispositif pour le balayage avec précision et en haute définition d'images de grandes dimensions
US5627585A (en) * 1992-05-06 1997-05-06 Rheinmetall Jenoptik Optical Metrology Gmbh Arrangement for high-resolution scanning of large image formats with exact geometrical correspondence
WO1999054785A1 (fr) * 1998-04-21 1999-10-28 Leica Microsystems Wetzlar Gmbh Procede pour la mesure du positionnement de structures sur une surface de masquage
DE19825518A1 (de) * 1998-06-08 1999-12-16 Fresenius Ag Vorrichtung zur Messung von Parameteränderungen an lichtdurchlässigen Objekten
DE19825518C2 (de) * 1998-06-08 2001-10-04 Fresenius Ag Vorrichtung zur Messung von Parameteränderungen an lichtdurchlässigen Objekten
GB2361309A (en) * 1999-12-16 2001-10-17 Nec Corp Pattern inspection method and device
US7239735B2 (en) 1999-12-16 2007-07-03 Nec Corporation Pattern inspection method and pattern inspection device

Also Published As

Publication number Publication date
JPS5963725A (ja) 1984-04-11
US4559603A (en) 1985-12-17
DD212619A5 (de) 1984-08-15
JPS633450B2 (fr) 1988-01-23
DE3368349D1 (en) 1987-01-22
EP0105661B1 (fr) 1986-12-10

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