Classifications

• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B24—GRINDING; POLISHING
  • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
  • B24B37/00—Lapping machines or devices; Accessories
  • B24B37/005—Control means for lapping machines or devices
  • B24B37/013—Devices or means for detecting lapping completion
• • G—PHYSICS
  • G01—MEASURING; TESTING
  • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
  • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
  • G01R31/26—Testing of individual semiconductor devices
  • G01R31/265—Contactless testing
  • G01R31/2656—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
  • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
  • H01L21/26—Bombardment with radiation
  • H01L21/263—Bombardment with radiation with high-energy radiation
  • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
  • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
  • H01L21/26—Bombardment with radiation
  • H01L21/263—Bombardment with radiation with high-energy radiation
  • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
  • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
  • H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement

Definitions

• the invention relates to a method for producing semiconductor components with at least one surface zone of a specific conductivity type produced by introducing a dopant into a semiconductor body.
• predetermined critical sheet resistances with close tolerance had been set by several successive thermal treatments of the semiconductor body, the sheet resistance being measured after the individual treatment steps.
• the invention has for its object to design the method according to the preamble of claim 1 so that it is easily possible to control the thermal treatment of a semiconductor body so that a predetermined dopant distribution or conductivity is reliably maintained.
• This object is achieved in that the electrical properties of a test figure formed in part of the surface of the semiconductor body are measured and at the same time the surface of the semiconductor body is subjected to a thermal treatment which changes the dopant distribution or the conductivity by means of intense optical radiation directed at it , which is canceled as soon as the measured electrical properties have reached a predetermined value.
• the single figure shows a disk-shaped semiconductor body 1 which, in addition to the (four only schematically indicated) semiconductor components to be produced.
• 2 carries a test figure 3.
• the sheet resistance can be measured with the aid of contact tips 4 placed on the contact areas of this test figure.
• the wafer After the dopant has been introduced into the wafer 1 by ion implantation, the wafer is. so intensely optically irradiated that the implanted layer heals. This irradiation is preferably carried out with the aid of a continuously or pulsed laser.
• the decrease in sheet resistance that occurs during this thermal treatment is measured in situ via test figure 3 and contact tips 4. After reaching the predetermined target value for the sheet resistance, the optical radiation is switched off and the thermal treatment is abruptly stopped.
• the thermal treatment can be carried out by irradiation with a laser, but also by irradiation from strong other light sources, scanned or unscanned.
• the method according to the invention can be used with particular success for the precise manufacture of sheet resistors, in particular high-resistance resistors in integrated circuits.
• Another preferred application of the method according to the invention is the reproducible setting of predetermined small base widths in bipolar high-frequency transistors.
• test figure used to measure the dopant distribution or conductivity in the semiconductor body need not be exclusively a zone or arrangement of zones used for this purpose, but also by one or a part of one of the ones to be produced Semiconductor components can be formed.

Landscapes

• Physics & Mathematics (AREA)
• Engineering & Computer Science (AREA)
• High Energy & Nuclear Physics (AREA)
• Computer Hardware Design (AREA)
• Toxicology (AREA)
• General Physics & Mathematics (AREA)
• Manufacturing & Machinery (AREA)
• Health & Medical Sciences (AREA)
• Microelectronics & Electronic Packaging (AREA)
• Power Engineering (AREA)
• Condensed Matter Physics & Semiconductors (AREA)
• Electromagnetism (AREA)
• Optics & Photonics (AREA)
• Mechanical Engineering (AREA)
• Testing Or Measuring Of Semiconductors Or The Like (AREA)
• Bipolar Transistors (AREA)

Applications Claiming Priority (2)

Publications (1)

Family

ID=6048210

Family Applications (1)

Country Status (5)

Families Citing this family (5)

Family Cites Families (2)

• 1978
  • 1978-08-30 DE DE19782837749 patent/DE2837749A1/de not_active Ceased
• 1979
  • 1979-08-29 JP JP50143779A patent/JPS55500701A/ja active Pending
  • 1979-08-29 GB GB8014046A patent/GB2042262A/en not_active Withdrawn
  • 1979-08-29 WO PCT/DE1979/000096 patent/WO1980000522A1/de unknown
• 1980
  • 1980-03-25 EP EP19790901088 patent/EP0018409A1/de not_active Withdrawn

Non-Patent Citations (1)

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