GB1246386A - Improvements relating to diffusion of material into a substrate - Google Patents

Improvements relating to diffusion of material into a substrate

Info

Publication number
GB1246386A
GB1246386A GB611369A GB611369A GB1246386A GB 1246386 A GB1246386 A GB 1246386A GB 611369 A GB611369 A GB 611369A GB 611369 A GB611369 A GB 611369A GB 1246386 A GB1246386 A GB 1246386A
Authority
GB
United Kingdom
Prior art keywords
layer
impurity
substrate
type
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB611369A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of GB1246386A publication Critical patent/GB1246386A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/12—Heating of the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/18—Controlling or regulating
    • C30B31/185—Pattern diffusion, e.g. by using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Electromagnetism (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Element Separation (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

1,246,386. Semi-conductor devices. INTERNATIONAL BUSINESS MACHINES CORP. 5 Feb., 1969 [8 Feb., 1968], No. 6113/69. Addition to 1,122,489. Heading H1K. An impurity is selectively diffused into a semiconductor substrate by applying a layer containing the impurity to the substrate and selectively heating the layer with a pulsed laser beam the duration and intensity of the pulses and the relating positions of the beam and substrate being controlled to achieve the desired diffused region, The semi-conductor substrate (11) may be supported on a carriage (12) so that its position relative to the laser (18) may be varied, for example under computer control, Fig. 1 (not shown). Part of the laser beam is diverted to a monitoring system (26). A light source (28) is arranged so that it projects a light spot on to the substrate at the same point as does the laser so that the substrate may be positioned as desired before energizing the laser. The impurity source layer may comprise pyrolytically deposited SiO 2 containing P, B or As, or P 2 O 5 glass or borate glass, or may be formed by the decomposition of BCl 3 or AsCl 3 . The deposited layer may be photolithographically processed to the desired pattern. Transistors, diodes and integrated circuits may be produced. As shown, Fig. 3, a plurality of transistors isolated from one another by PN junctions may be formed in a single wafer by depositing a layer of an N type impurity on the surface of a P type Si substrate 52 and selectively heating using the pulsed laser beam to produce N type sub-collector regions 53. The excess impurity is removed and an N type layer 58 is epitaxially deposited on the substrate. A layer of a P type impurity is deposited on the surface and is heated to form P<SP>+</SP> type isolation regions 56 and P type base regions 60, the difference in impurity concentration and diffusion depth being achieved by appropriate selection of the laser power and pulse length. The excess impurity is removed and replaced with a layer of an N type impurity which is selectively heated to produce N<SP>+</SP> type emitter region 62 and collector contact region 64. The excess impurity is removed, a layer 66 of SiO 2 is formed and emitter base and collector contacts are applied by vapour depositing a layer of metal and etching to the desired pattern.
GB611369A 1968-02-08 1969-02-05 Improvements relating to diffusion of material into a substrate Expired GB1246386A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US70405868A 1968-02-08 1968-02-08

Publications (1)

Publication Number Publication Date
GB1246386A true GB1246386A (en) 1971-09-15

Family

ID=24827881

Family Applications (1)

Application Number Title Priority Date Filing Date
GB611369A Expired GB1246386A (en) 1968-02-08 1969-02-05 Improvements relating to diffusion of material into a substrate

Country Status (3)

Country Link
DE (1) DE1906203A1 (en)
FR (1) FR2001303A6 (en)
GB (1) GB1246386A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2131608A (en) * 1982-11-26 1984-06-20 Gen Electric Plc Fabricating semiconductor circuits

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2837749A1 (en) * 1978-08-30 1980-03-13 Philips Patentverwaltung METHOD FOR PRODUCING SEMICONDUCTOR COMPONENTS
DE3017512A1 (en) * 1980-05-07 1981-11-12 Siemens AG, 1000 Berlin und 8000 München Semiconductor impurities gettering - by interference producing element in ray path from pulsed laser
DE3437120A1 (en) * 1984-10-10 1986-04-10 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt METHOD FOR THE PRODUCTION OF SEMICONDUCTOR LAYERS ON SEMICONDUCTOR BODIES OR FOR THE DIFFUSION OF INTERFERENCE POINTS IN THE SEMICONDUCTOR BODY

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2131608A (en) * 1982-11-26 1984-06-20 Gen Electric Plc Fabricating semiconductor circuits

Also Published As

Publication number Publication date
DE1906203A1 (en) 1969-11-20
FR2001303A6 (en) 1969-09-26

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