EP0001549A1 - Procédé de fabrication d'une couche photo-sensible sur un tambour d'impression pour un procédé de reproduction photoélectrostatique - Google Patents
Procédé de fabrication d'une couche photo-sensible sur un tambour d'impression pour un procédé de reproduction photoélectrostatique Download PDFInfo
- Publication number
- EP0001549A1 EP0001549A1 EP78100799A EP78100799A EP0001549A1 EP 0001549 A1 EP0001549 A1 EP 0001549A1 EP 78100799 A EP78100799 A EP 78100799A EP 78100799 A EP78100799 A EP 78100799A EP 0001549 A1 EP0001549 A1 EP 0001549A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- silicon
- printing drum
- layer
- drum
- vessel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
- G03G5/02—Charge-receiving layers
- G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
- G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
- G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
- G03G5/08214—Silicon-based
- G03G5/08278—Depositing methods
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
- G03G5/02—Charge-receiving layers
- G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
- G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
- G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
- G03G5/08214—Silicon-based
- G03G5/08221—Silicon-based comprising one or two silicon based layers
Definitions
- the invention relates to a printing drum, as indicated in the preamble of paterite claim 1.
- the printing drums mentioned serve, after charging in a corona discharge, to record an image of the original to be copied projected onto the surface of the drum.
- This image is an electrostatic charge image which subsequently becomes a printing drum coated with ink using a toner powder.
- By running together The actual printing process is carried out from the paper and the surface of the printing drum.
- the material of the surface layer of the printing drum must have a high sensitivity to light, specifically in the spectral range of technically customary light sources; the material must have a specific electrical resistance in the dark in the size of ⁇ ⁇ 2: 10 12 Obm ⁇ cm; the material must have unchanged properties even under permanent load, ie work without fatigue, and it must have sufficient abrasion resistance for copying.
- a printing drum as specified in the preamble of patent claim 1, as indicated in the characterizing part of patent claim 1.
- a preferred production method of a printing drum as in the invention is specified in the subclaims.
- the silicon can in particular be doped, with which the conductivity behavior can be influenced in a known manner.
- Amorphous silicon is an extremely high-resistance material with a specific resistance of up to 10 14 Ohm ⁇ cm. If in the manufacture of a layer of amorphous silicon due to precipitation a substrate body, the surface temperature of this body is kept at about 270 ° C, one can achieve an amorphous silicon layer which - as stated - has an efficiency of the photocurrent with 50%. The maximum efficiency is in the range of a wavelength of approximately 600 nm.
- the fact that the electrons and holes in silicon have an approximately equal mobility is of great importance. This fact is used in the invention to achieve a chargeable layer which has practically no electrical fatigue, as is the case with materials which have been known for years.
- Amorphous layers made of silicon have a high abrasion resistance, which is very important in connection with the invention.
- a pressure drum according to the invention has an increased service life.
- a vessel 1 designates a vessel which can be evacuated with the aid of a pump, ie can be removed from the air atmosphere contained therein.
- the vessel 1 can be closed with a lid 3.
- a printing drum 2 provided with a layer according to the invention can be introduced into the vessel 1.
- 5 denotes a system of supply lines through which a gaseous substance containing the element silicon and hydrogen, such as silane SiH 4 , can be introduced into the interior of the vessel 1.
- a low-pressure glow discharge is maintained in the space around the surface 21 of the drum 2 inside the vessel 1.
- the surface of the printing drum 2 serves as the one electrode, which is connected to a high-frequency generator 60 via a high-frequency feed line 6.
- the glow discharge then burns inside the vessel 1 between the surface 21 and the jacket-shaped inner wall 11 of the vessel.
- the pressure of the reaction gas primarily that of the silane, is kept between 0.01 mbar and 2 mbar for the glow discharge.
- the electrical power of the glow discharge is dimensioned such that, on the one hand, there is still no disruptive sputtering at the electrodes and / or on the walls of the vessel, but on the other hand there is a decomposition of the silicon and hydrogen-containing gas, namely into a precipitate amorphous silicon Hydrogen storage.
- the decomposition rate is accordingly driven so far that not all e.g. Silane molecules are completely decomposed, but that there are also silicon atoms to which individual hydrogen atoms are bonded, so that about 1-20, preferably 10 atomic percent hydrogen content is present.
- the surface of the printing drum 2 can be brought to a temperature of in particular approx. With the choice of the temperature, the amount of hydrogen built into the amorphously deposited silicon can be adjusted.
- a special doping in an amorphous silicon layer produced according to the invention has a great favorable influence.
- doping is first carried out, which leads to a conductivity type of the two possibilities of an N or P line.
- the doping agent preferably diborane for P line or preferably phosphine for N line, is added as a gas to the silicon-containing gas 5 in a corresponding amount of, for example, 10 -4 to 10- 1 volume%, so that the layer portions 41, 42 the layer 4 arise.
- the layer thickness on the printing drum can be kept smaller.
- a layer on the printing drum, as provided according to the invention, has the advantage that it can be exposed to relatively high temperatures compared to the prior art without undergoing structural changes.
- a certain upper limit for the temperature resistance is the value of the temperature at which the silicon was deposited on the surface 2t.
- the crystallization temperature of the silicon is advantageously only around 1000 ° C.
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photoreceptors In Electrophotography (AREA)
- Physical Vapour Deposition (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE2746967A DE2746967C2 (de) | 1977-10-19 | 1977-10-19 | Elektrofotographische Aufzeichnungstrommel |
DE2746967 | 1977-10-19 |
Publications (2)
Publication Number | Publication Date |
---|---|
EP0001549A1 true EP0001549A1 (fr) | 1979-05-02 |
EP0001549B1 EP0001549B1 (fr) | 1982-09-01 |
Family
ID=6021787
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP78100799A Expired EP0001549B1 (fr) | 1977-10-19 | 1978-08-31 | Procédé de fabrication d'une couche photo-sensible sur un tambour d'impression pour un procédé de reproduction photoélectrostatique |
Country Status (7)
Country | Link |
---|---|
US (1) | US4225222A (fr) |
EP (1) | EP0001549B1 (fr) |
JP (1) | JPS5478135A (fr) |
AT (1) | AT359828B (fr) |
CA (1) | CA1159702A (fr) |
DE (2) | DE2746967C2 (fr) |
IT (1) | IT1100321B (fr) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS564150A (en) * | 1979-06-22 | 1981-01-17 | Minolta Camera Co Ltd | Electrophotographic receptor |
EP0038221A2 (fr) * | 1980-04-16 | 1981-10-21 | Hitachi, Ltd. | Elément électrophotographique |
EP0039223A2 (fr) * | 1980-04-25 | 1981-11-04 | Hitachi, Ltd. | Elément électrophotographique et procédé pour l'utilisation d'un élément électrophotographique |
EP0045204A2 (fr) * | 1980-07-28 | 1982-02-03 | Hitachi, Ltd. | Organe électrophotographique et appareil électrophotographique le comprenant |
FR2490839A1 (fr) * | 1980-09-25 | 1982-03-26 | Canon Kk | Element photoconducteur |
EP0066812A2 (fr) * | 1981-05-29 | 1982-12-15 | Kabushiki Kaisha Toshiba | Elément photosensible électrophotographique |
FR2521316A1 (fr) * | 1982-02-08 | 1983-08-12 | Canon Kk | Element photoconducteur |
EP0188844A1 (fr) * | 1985-01-08 | 1986-07-30 | Océ-Nederland B.V. | Procédé électrophotographique de formation d'une image visible |
Families Citing this family (83)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4484809B1 (en) * | 1977-12-05 | 1995-04-18 | Plasma Physics Corp | Glow discharge method and apparatus and photoreceptor devices made therewith |
AU530905B2 (en) * | 1977-12-22 | 1983-08-04 | Canon Kabushiki Kaisha | Electrophotographic photosensitive member |
DE2954551C2 (fr) * | 1978-03-03 | 1989-02-09 | Canon K.K., Tokio/Tokyo, Jp | |
JPS54132016U (fr) * | 1978-03-06 | 1979-09-13 | ||
US4565731A (en) * | 1978-05-04 | 1986-01-21 | Canon Kabushiki Kaisha | Image-forming member for electrophotography |
US4471042A (en) * | 1978-05-04 | 1984-09-11 | Canon Kabushiki Kaisha | Image-forming member for electrophotography comprising hydrogenated amorphous matrix of silicon and/or germanium |
JPS55127561A (en) * | 1979-03-26 | 1980-10-02 | Canon Inc | Image forming member for electrophotography |
JPS55166647A (en) * | 1979-06-15 | 1980-12-25 | Fuji Photo Film Co Ltd | Photoconductive composition and electrophotographic receptor using this |
JPS565567A (en) * | 1979-06-27 | 1981-01-21 | Canon Inc | Image forming method |
JPS60431B2 (ja) * | 1979-06-27 | 1985-01-08 | キヤノン株式会社 | 膜形成法 |
JPS5624354A (en) * | 1979-08-07 | 1981-03-07 | Fuji Photo Film Co Ltd | Electrophotographic receptor |
US4365015A (en) * | 1979-08-20 | 1982-12-21 | Canon Kabushiki Kaisha | Photosensitive member for electrophotography composed of a photoconductive amorphous silicon |
JPS5662254A (en) * | 1979-10-24 | 1981-05-28 | Canon Inc | Electrophotographic imaging material |
US4361638A (en) * | 1979-10-30 | 1982-11-30 | Fuji Photo Film Co., Ltd. | Electrophotographic element with alpha -Si and C material doped with H and F and process for producing the same |
US5382487A (en) * | 1979-12-13 | 1995-01-17 | Canon Kabushiki Kaisha | Electrophotographic image forming member |
JPS5713777A (en) | 1980-06-30 | 1982-01-23 | Shunpei Yamazaki | Semiconductor device and manufacture thereof |
DE3117037A1 (de) * | 1980-05-08 | 1982-03-11 | Takao Sakai Osaka Kawamura | Elektrophotografisches, lichtempfindliches element |
JPS56156834A (en) * | 1980-05-08 | 1981-12-03 | Minolta Camera Co Ltd | Electrophotographic receptor |
US4400409A (en) * | 1980-05-19 | 1983-08-23 | Energy Conversion Devices, Inc. | Method of making p-doped silicon films |
JPS574172A (en) * | 1980-06-09 | 1982-01-09 | Canon Inc | Light conductive member |
US4889783A (en) * | 1980-06-25 | 1989-12-26 | Semiconductor Energy Laboratory Co., Ltd. | Printing member for electrostatic photocopying |
JPS5711351A (en) * | 1980-06-25 | 1982-01-21 | Shunpei Yamazaki | Electrostatic copying machine |
US5144367A (en) * | 1980-06-25 | 1992-09-01 | Semiconductor Energy Laboratory Co., Ltd. | Printing member for electrostatic photocopying |
US5143808A (en) * | 1980-06-25 | 1992-09-01 | Semiconductor Energy Laboratory Co., Ltd. | Printing member for electrostatic photocopying |
US5545503A (en) * | 1980-06-25 | 1996-08-13 | Semiconductor Energy Laboratory Co., Ltd. | Method of making printing member for electrostatic photocopying |
US5262350A (en) * | 1980-06-30 | 1993-11-16 | Semiconductor Energy Laboratory Co., Ltd. | Forming a non single crystal semiconductor layer by using an electric current |
US6900463B1 (en) | 1980-06-30 | 2005-05-31 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US5859443A (en) * | 1980-06-30 | 1999-01-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
JPS5730325A (en) * | 1980-07-30 | 1982-02-18 | Nec Corp | Manufacture of amorphous silicon thin film |
JPS5748735A (en) * | 1980-09-08 | 1982-03-20 | Canon Inc | Manufacture of image forming member for electrophotography |
US4394425A (en) * | 1980-09-12 | 1983-07-19 | Canon Kabushiki Kaisha | Photoconductive member with α-Si(C) barrier layer |
FR2490246A1 (fr) * | 1980-09-17 | 1982-03-19 | Cit Alcatel | Dispositif de deposition chimique activee sous plasma |
JPS5754959A (en) * | 1980-09-18 | 1982-04-01 | Canon Inc | Printing method |
US4409308A (en) * | 1980-10-03 | 1983-10-11 | Canon Kabuskiki Kaisha | Photoconductive member with two amorphous silicon layers |
JPS57104938A (en) * | 1980-12-22 | 1982-06-30 | Canon Inc | Image forming member for electrophotography |
US4357179A (en) * | 1980-12-23 | 1982-11-02 | Bell Telephone Laboratories, Incorporated | Method for producing devices comprising high density amorphous silicon or germanium layers by low pressure CVD technique |
US4490453A (en) * | 1981-01-16 | 1984-12-25 | Canon Kabushiki Kaisha | Photoconductive member of a-silicon with nitrogen |
US4539283A (en) * | 1981-01-16 | 1985-09-03 | Canon Kabushiki Kaisha | Amorphous silicon photoconductive member |
US4464451A (en) * | 1981-02-06 | 1984-08-07 | Canon Kabushiki Kaisha | Electrophotographic image-forming member having aluminum oxide layer on a substrate |
US4409311A (en) * | 1981-03-25 | 1983-10-11 | Minolta Camera Kabushiki Kaisha | Photosensitive member |
JPS57177156A (en) * | 1981-04-24 | 1982-10-30 | Canon Inc | Photoconductive material |
US4430404A (en) | 1981-04-30 | 1984-02-07 | Hitachi, Ltd. | Electrophotographic photosensitive material having thin amorphous silicon protective layer |
JPS57186321A (en) * | 1981-05-12 | 1982-11-16 | Fuji Electric Corp Res & Dev Ltd | Producing method for amorphous silicon film |
US4527886A (en) * | 1981-05-12 | 1985-07-09 | Kyoto Ceramic Co., Ltd. | Electrophotographic recording apparatus having both functions of copying and printing |
JPH0629977B2 (ja) * | 1981-06-08 | 1994-04-20 | 株式会社半導体エネルギー研究所 | 電子写真用感光体 |
US4438188A (en) | 1981-06-15 | 1984-03-20 | Fuji Electric Company, Ltd. | Method for producing photosensitive film for electrophotography |
DE3124810A1 (de) * | 1981-06-24 | 1983-01-13 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum herstellen amorpher selenschichten mit und ohne dotierende zusaetze, sowie eine durch das verfahren hergestellte oberflaechenschicht einer fotoleitertrommel |
US4343881A (en) * | 1981-07-06 | 1982-08-10 | Savin Corporation | Multilayer photoconductive assembly with intermediate heterojunction |
JPS5862658A (ja) * | 1981-10-08 | 1983-04-14 | Fuji Electric Co Ltd | 電子写真プロセス |
JPS58102970A (ja) * | 1981-12-16 | 1983-06-18 | Konishiroku Photo Ind Co Ltd | レ−ザ記録装置 |
US4532196A (en) * | 1982-01-25 | 1985-07-30 | Stanley Electric Co., Ltd. | Amorphous silicon photoreceptor with nitrogen and boron |
US4501766A (en) * | 1982-02-03 | 1985-02-26 | Tokyo Shibaura Denki Kabushiki Kaisha | Film depositing apparatus and a film depositing method |
US4452875A (en) * | 1982-02-15 | 1984-06-05 | Canon Kabushiki Kaisha | Amorphous photoconductive member with α-Si interlayers |
DE3308165A1 (de) * | 1982-03-08 | 1983-09-22 | Canon K.K., Tokyo | Fotoleitfaehiges aufzeichnungselement |
DE3309240A1 (de) * | 1982-03-15 | 1983-09-22 | Canon K.K., Tokyo | Fotoleitfaehiges aufzeichnungselement |
US4795688A (en) * | 1982-03-16 | 1989-01-03 | Canon Kabushiki Kaisha | Layered photoconductive member comprising amorphous silicon |
US4617246A (en) * | 1982-11-04 | 1986-10-14 | Canon Kabushiki Kaisha | Photoconductive member of a Ge-Si layer and Si layer |
US4466380A (en) * | 1983-01-10 | 1984-08-21 | Xerox Corporation | Plasma deposition apparatus for photoconductive drums |
JPS59207620A (ja) * | 1983-05-10 | 1984-11-24 | Zenko Hirose | アモルフアスシリコン成膜装置 |
DE3448369C2 (fr) * | 1983-05-18 | 1992-03-05 | Kyocera Corp., Kyoto, Jp | |
US4576698A (en) * | 1983-06-30 | 1986-03-18 | International Business Machines Corporation | Plasma etch cleaning in low pressure chemical vapor deposition systems |
JPH0627948B2 (ja) * | 1983-07-15 | 1994-04-13 | キヤノン株式会社 | 光導電部材 |
US4572882A (en) * | 1983-09-09 | 1986-02-25 | Canon Kabushiki Kaisha | Photoconductive member containing amorphous silicon and germanium |
DE3575211D1 (de) * | 1984-03-28 | 1990-02-08 | Mita Industrial Co Ltd | Kopiergeraet mit verringerter bildspeicherzeit. |
US4602352A (en) * | 1984-04-17 | 1986-07-22 | University Of Pittsburgh | Apparatus and method for detection of infrared radiation |
US4603401A (en) * | 1984-04-17 | 1986-07-29 | University Of Pittsburgh | Apparatus and method for infrared imaging |
US4540647A (en) * | 1984-08-20 | 1985-09-10 | Eastman Kodak Company | Method for the manufacture of photoconductive insulating elements with a broad dynamic exposure range |
US4619877A (en) * | 1984-08-20 | 1986-10-28 | Eastman Kodak Company | Low field electrophotographic process |
JPH071395B2 (ja) * | 1984-09-27 | 1995-01-11 | 株式会社東芝 | 電子写真感光体 |
US4818651A (en) | 1986-02-07 | 1989-04-04 | Canon Kabushiki Kaisha | Light receiving member with first layer of A-SiGe(O,N)(H,X) and second layer of A-SiC wherein the first layer has unevenly distributed germanium atoms and both layers contain a conductivity controller |
US4925276A (en) * | 1987-05-01 | 1990-05-15 | Electrohome Limited | Liquid crystal light valve utilizing hydrogenated amorphous silicon photodiode |
US5082760A (en) * | 1987-11-10 | 1992-01-21 | Fuji Xerox Co., Ltd. | Method for preparing an electrophotographic photoreceptor having a charge transporting layer containing aluminum oxide |
JPH0810332B2 (ja) * | 1988-02-10 | 1996-01-31 | 富士ゼロックス株式会社 | 電子写真感光体の製造方法 |
US5284730A (en) * | 1990-10-24 | 1994-02-08 | Canon Kabushiki Kaisha | Electrophotographic light-receiving member |
JP2876545B2 (ja) * | 1990-10-24 | 1999-03-31 | キヤノン株式会社 | 光受容部材 |
AU646567B2 (en) * | 1991-05-30 | 1994-02-24 | Canon Kabushiki Kaisha | Light-receiving member |
JP3229002B2 (ja) * | 1992-04-24 | 2001-11-12 | キヤノン株式会社 | 電子写真用光受容部材 |
EP0605972B1 (fr) * | 1992-12-14 | 1999-10-27 | Canon Kabushiki Kaisha | Elément récepteur de lumière ayant une couche réceptrice de lumière à structure multiple avec une concentration améliorée en atomes d'hydrogène ou/et d'halogène à proximité de l'interface des couches adjacentes |
US6365308B1 (en) | 1992-12-21 | 2002-04-02 | Canon Kabushiki Kaisha | Light receiving member for electrophotography |
JP3102722B2 (ja) * | 1993-03-23 | 2000-10-23 | キヤノン株式会社 | アモルファスシリコン系電子写真用感光体の製造方法 |
DE69929371T2 (de) * | 1998-05-14 | 2006-08-17 | Canon K.K. | Elektrophotographischer Bildherstellungsapparat |
EP0957405B1 (fr) * | 1998-05-14 | 2009-10-21 | Canon Kabushiki Kaisha | Appareil de production d' images |
KR100455430B1 (ko) * | 2002-03-29 | 2004-11-06 | 주식회사 엘지이아이 | 열교환기 표면처리장비의 냉각장치 및 그 제조방법 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1277015B (de) * | 1961-05-29 | 1968-09-05 | Minnesota Mining & Mfg | Elektrophotographisches Aufzeichnungsmaterial |
DE1965323A1 (de) * | 1968-12-30 | 1970-07-16 | Commw Of Australia | Mehrlagiger flaechenfoermiger Aufzeichnungstraeger fuer latente elektrostatische Bilder |
DE2632987A1 (de) * | 1975-07-28 | 1977-02-10 | Rca Corp | Halbleiterbauelement |
US4064521A (en) * | 1975-07-28 | 1977-12-20 | Rca Corporation | Semiconductor device having a body of amorphous silicon |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1321769A (en) * | 1970-12-04 | 1973-06-27 | Rca Corp | Electrophotographic recording element |
-
1977
- 1977-10-19 DE DE2746967A patent/DE2746967C2/de not_active Expired
-
1978
- 1978-08-31 EP EP78100799A patent/EP0001549B1/fr not_active Expired
- 1978-08-31 DE DE7878100799T patent/DE2862016D1/de not_active Expired
- 1978-10-16 AT AT741178A patent/AT359828B/de not_active IP Right Cessation
- 1978-10-17 IT IT28816/78A patent/IT1100321B/it active
- 1978-10-17 CA CA000313556A patent/CA1159702A/fr not_active Expired
- 1978-10-17 US US05/952,066 patent/US4225222A/en not_active Expired - Lifetime
- 1978-10-19 JP JP12904678A patent/JPS5478135A/ja active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1277015B (de) * | 1961-05-29 | 1968-09-05 | Minnesota Mining & Mfg | Elektrophotographisches Aufzeichnungsmaterial |
DE1965323A1 (de) * | 1968-12-30 | 1970-07-16 | Commw Of Australia | Mehrlagiger flaechenfoermiger Aufzeichnungstraeger fuer latente elektrostatische Bilder |
DE2632987A1 (de) * | 1975-07-28 | 1977-02-10 | Rca Corp | Halbleiterbauelement |
US4064521A (en) * | 1975-07-28 | 1977-12-20 | Rca Corporation | Semiconductor device having a body of amorphous silicon |
Non-Patent Citations (2)
Title |
---|
JOURNAL OF NON-CRYSTALLINE SOLIDS, Band 3, 1970, North-Holland Publishing Co. R.C. CHITTICK: "Properties of Glow-Discharge-Deposited Amorphous Germanium and Silicon", Seiten 255 bis 270 * |
PHYSICS TODAY, Oktober 1976, J. TAUC: "Amorphous semiconductors", Seiten 23 bis 31 * |
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS564150A (en) * | 1979-06-22 | 1981-01-17 | Minolta Camera Co Ltd | Electrophotographic receptor |
JPS6357784B2 (fr) * | 1979-06-22 | 1988-11-14 | Minoruta Kamera Kk | |
EP0038221A2 (fr) * | 1980-04-16 | 1981-10-21 | Hitachi, Ltd. | Elément électrophotographique |
EP0038221A3 (en) * | 1980-04-16 | 1982-02-03 | Hitachi, Ltd. | Electrophotographic member |
EP0039223A2 (fr) * | 1980-04-25 | 1981-11-04 | Hitachi, Ltd. | Elément électrophotographique et procédé pour l'utilisation d'un élément électrophotographique |
EP0039223A3 (en) * | 1980-04-25 | 1982-02-17 | Hitachi, Ltd. | Electrophotographic member and method of operating the same |
EP0045204A3 (en) * | 1980-07-28 | 1982-02-24 | Hitachi, Ltd. | Electrophotographic member and electrophotographic apparatus including the member |
EP0045204A2 (fr) * | 1980-07-28 | 1982-02-03 | Hitachi, Ltd. | Organe électrophotographique et appareil électrophotographique le comprenant |
FR2490839A1 (fr) * | 1980-09-25 | 1982-03-26 | Canon Kk | Element photoconducteur |
EP0066812A2 (fr) * | 1981-05-29 | 1982-12-15 | Kabushiki Kaisha Toshiba | Elément photosensible électrophotographique |
EP0066812B1 (fr) * | 1981-05-29 | 1988-09-07 | Kabushiki Kaisha Toshiba | Elément photosensible électrophotographique |
FR2521316A1 (fr) * | 1982-02-08 | 1983-08-12 | Canon Kk | Element photoconducteur |
EP0188844A1 (fr) * | 1985-01-08 | 1986-07-30 | Océ-Nederland B.V. | Procédé électrophotographique de formation d'une image visible |
Also Published As
Publication number | Publication date |
---|---|
IT1100321B (it) | 1985-09-28 |
DE2746967A1 (de) | 1979-04-26 |
DE2746967C2 (de) | 1981-09-24 |
DE2862016D1 (en) | 1982-10-28 |
AT359828B (de) | 1980-12-10 |
CA1159702A (fr) | 1984-01-03 |
US4225222A (en) | 1980-09-30 |
ATA741178A (de) | 1980-04-15 |
EP0001549B1 (fr) | 1982-09-01 |
IT7828816A0 (it) | 1978-10-17 |
JPS5478135A (en) | 1979-06-22 |
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