EP0000123B1 - Procédé de dépôt de couches monocristallines à partir de la phase liquide selon le système de glissement de coulisses. - Google Patents

Procédé de dépôt de couches monocristallines à partir de la phase liquide selon le système de glissement de coulisses. Download PDF

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Publication number
EP0000123B1
EP0000123B1 EP78100110A EP78100110A EP0000123B1 EP 0000123 B1 EP0000123 B1 EP 0000123B1 EP 78100110 A EP78100110 A EP 78100110A EP 78100110 A EP78100110 A EP 78100110A EP 0000123 B1 EP0000123 B1 EP 0000123B1
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EP
European Patent Office
Prior art keywords
melt
substrate
slide
melts
substrates
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Expired
Application number
EP78100110A
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German (de)
English (en)
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EP0000123A1 (fr
Inventor
Claus Weyrich
Werner Hosp
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Siemens AG
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Siemens AG
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Publication date
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B09—DISPOSAL OF SOLID WASTE; RECLAMATION OF CONTAMINATED SOIL
    • B09B—DISPOSAL OF SOLID WASTE NOT OTHERWISE PROVIDED FOR
    • B09B1/00—Dumping solid waste
    • B09B1/008—Subterranean disposal, e.g. in boreholes or subsurface fractures
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
    • C30B19/063—Sliding boat system
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02395—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02463—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02625—Liquid deposition using melted materials

Definitions

  • the invention relates to a method for depositing single-crystalline layers according to the liquid-phase shift epitaxy, as specified in the preamble of claim 1.
  • Such a sliding epitaxy method and a device for carrying out this method are described, for example, in US Pat. No. 3,753,801.
  • double heterostructure diodes e.g. a (Ga, Al) As-GaAs diode
  • US Re 28 140 From US Re 28 140 it is known to grow an epitaxial layer on successive substrates. There is a single storage container 10-12, from which melt is removed in portions by means of a first slide 13 into an opening 18 and then applied to a substrate wafer by displacement. If a further pane is to be coated, a further slide 14 is to be provided, with which the substrate slices and the portion opening 18 of the first slide have to be displaced relative to one another and with respect to the one storage container. For re-deposition, reheating to the original starting temperature is planned. In addition, US Re 28 140 only mentions coating several substrates in tandem. The possibility of depositing several layers on top of one another is also mentioned, for which purpose additional storage containers and additional portion openings have to be provided in an extended first slide. The substrate disc is probably again in the second slide.
  • Layer sequences are usually produced using sliding devices in which the substrate disks are located in suitably designed depressions in a graphite “boat” and in which a movable slide is present which has several Has chambers for different melts of different compositions.
  • the substrate disks are arranged one behind the other or concentrically at the same distance, and the chambers of the slide are also arranged one behind the other or concentrically with the appropriate distance.
  • the thickness of the grown layer is determined by the size of the lowering of the temperature of the melt and by the thickness of the melt above the substrate, and, unless the amount of dissolved substance corresponding to the lowering of the temperature is entirely deposited on the substrate, also by the cooling rate of the melt. If very thin layers are to be deposited on a substrate, then melts which are saturated with the material of the substrate must be used for the deposition, so that when the melt is pushed on, there is no uncontrolled dissolution of the substrate crystal on its surface and, as a result, an uncontrolled layer growth .
  • the object of the invention is to provide a method for the deposition of single-crystalline layers after the liquid phase shift epitaxy, with which it is possible to provide a plurality of substrate wafers simultaneously with a multilayer structure, without the need for such pre-substrates and which allows the number of to reduce the chambers of the slide provided for the melts to be pushed open.
  • the advantage of the method according to the invention is that the individual layers are deposited on the respective substrate wafers from the same melt, and that the temperature is reduced by the same amount for the individual melts. To control the thickness of the layer deposited in each case, the thickness of the melt located above the substrate wafer is varied accordingly.
  • the respective melt from which the layer in question is to be deposited in single crystal remains on the substrate crystal until it is in equilibrium with it.
  • the substrate wafers to be coated are arranged one behind the other in the apparatus used to carry out the method according to the invention at the same distance as the distance between the slider chambers provided for the melts.
  • the substrate disks or the chambers provided for the melts can be arranged linearly or also on concentric circles.
  • a first melt is pushed onto a first substrate.
  • the first melt can optionally have been brought into solution equilibrium via a pre-substrate.
  • the arrangement is cooled by a certain temperature interval T, which is, for example, approximately 1 ° C.
  • Material that is dissolved in the melt is deposited epitaxially on the substrate surface.
  • the melt is left on the substrate until the melt has reached the solution equilibrium prevailing at this new temperature, ie until the melt is exhausted for the deposition. It can be assumed that the growth out of the melt is determined by the diffusion of the substance dissolved in the melt, for example in the case of the deposition of GaAs by the diffusion of the As in the Ga melt.
  • the minimum residence time of the melt on the substrate after the cooling is completed by the equation. given, where W max is the greatest thickness of the melt used for deposition and D is the diffusion coefficient of the dissolved material in the melt.
  • a prerequisite for the necessity of this minimum dwell time is that the equation ⁇ ⁇ ⁇ T ⁇ t min is fulfilled, where ⁇ is the reciprocal cooling rate, AT is the cooling interval. If the equation ⁇ ⁇ ⁇ T> t min applies instead of this last equation, the minimum dwell time can be kept correspondingly lower after cooling. If the reciprocal cooling rate of the melt is kept sufficiently high, a holding time of the melt on the substrate without a simultaneous lowering of the temperature could even be omitted entirely.
  • the thickness of the melt is proportional to the thickness of the melt located over the respective substrate wafer.
  • ⁇ T 1 ° C.
  • the thickness of the melt must be approximately 1 mm in order to grow a 1 ⁇ m thick GaAs layer, taking the hold time according to the equation with D approximately equal to 5.10 -5 cm 2 sec -1 must be approximately 200 sec.
  • the first melt is then pushed onto the second substrate by sliding the slide; at the same time, the second melt is then pushed onto the first substrate to deposit the second layer.
  • the arrangement is then cooled again by the same amount of temperature, in the example given by 1 ° C.
  • the first melt is then pushed onto the third substrate wafer, the second melt onto the second substrate wafer, and the third melt onto the first substrate wafer, and then the entire arrangement cooled again by 1 ° C.
  • Fig. 2 shows the temperature profile of the entire arrangement.
  • the initial temperature T A is, for example, 800 ° C.
  • the temperature is gradually lowered by an amount AT, for example by 1 ° C.
  • the final temperature T E is in a process in which ten substrate wafers are coated with a 4-layer structure, for example 14 ° C. lower than the initial temperature.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • General Life Sciences & Earth Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Claims (3)

1. Procédé pour déposer des couches monocristallines sur des substrats selon l'épitaxie à déplacement de phases liquides, dans lequel on dépose simultanément, les unes sur les autres, différentes couches monocristallines sur plusieurs substrats, par déplacement à l'aide d'un tiroir de distribution de masses en fusion sur les substrats au moyen d'un tiroir et écartement des masses en fusion après le dépôt de la couche concernée, par la poursuite du déplacement du tiroir, du type dans lequel on utilise un tiroir qui possède plusieurs chambres disposées à des distances identiques et dans lesquelles sont situées, les masses en fusion de matériau à déposer, le dépôt des différentes couches étant effectué au moyen d'un abaissement de la température de la masse en fusion située sur le substrat, caractérisé par le fait que les substrats sont disposés à des distances régulières qui sont égales à celles des chambres du tiroir, que pour chaque processus de dépôt la température de toutes les masses en fusion situées respectivement sur un substrat est abaissée de la même valeur, que pour le dépôt de couches monocristallines possédant une épaisseur prédéterminée, l'épaisseur de la masse en fusion située au-dessus du substrat considéré est maintenue à une valeur correspondant à l'épaisseur de couche à déposer, et qu'à la fin de l'abaissement de la température et jusqu'au déplacement de la masse en fusion, on maintient un temps de séjour minimal tmin dont la valeur est déterminée selon les relations
Figure imgb0005
et
Figure imgb0006
dans lesquelles Wmax représente l'épaisseur maximale des masses en fusion présentes dans le dispositif, D est le coefficient de diffusion du matériau dessous dans la masse en fusion, α est l'inverse de la vitesse de refroidissement et AT est la valeur de la diminution de température de la phase individuelle de refroidissement.
2. Procédé suivant la revendication 1 pour fabriquer des couches monocristallines sur des semi-conducteurs formés de composés d'éléments des groupes III et V, caractérisé par le fait que l'on choisit comme masse en fusion une masse en fusion des composants du groupe III, dans laquelle est dissous un matériau des composés du groupe v.
3. Application du procédé selon l'une des revendications 1 ou 2 pour fabriquer des cristaux semi-conducteurs à structure hétérogène.
EP78100110A 1977-07-05 1978-06-07 Procédé de dépôt de couches monocristallines à partir de la phase liquide selon le système de glissement de coulisses. Expired EP0000123B1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE2730358A DE2730358C3 (de) 1977-07-05 1977-07-05 Verfahren zum aufeinanderfolgenden Abscheiden einkristalliner Schichten auf einem Substrat nach der Flüssigphasen-Schiebeepitaxie
DE2730358 1977-07-05

Publications (2)

Publication Number Publication Date
EP0000123A1 EP0000123A1 (fr) 1979-01-10
EP0000123B1 true EP0000123B1 (fr) 1981-02-25

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EP78100110A Expired EP0000123B1 (fr) 1977-07-05 1978-06-07 Procédé de dépôt de couches monocristallines à partir de la phase liquide selon le système de glissement de coulisses.

Country Status (6)

Country Link
US (1) US4149914A (fr)
EP (1) EP0000123B1 (fr)
JP (1) JPS5414669A (fr)
CA (1) CA1116312A (fr)
DE (1) DE2730358C3 (fr)
IT (1) IT1096839B (fr)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7712315A (nl) * 1977-11-09 1979-05-11 Philips Nv Werkwijze voor het epitaxiaal neerslaan van verscheidene lagen.
DE3036643C2 (de) * 1980-09-29 1984-09-20 Siemens AG, 1000 Berlin und 8000 München Vorrichtung zur Flüssigphasen-Epitaxie
US4319937A (en) * 1980-11-12 1982-03-16 University Of Illinois Foundation Homogeneous liquid phase epitaxial growth of heterojunction materials
US4342148A (en) * 1981-02-04 1982-08-03 Northern Telecom Limited Contemporaneous fabrication of double heterostructure light emitting diodes and laser diodes using liquid phase epitaxy
US4547230A (en) * 1984-07-30 1985-10-15 The United States Of America As Represented By The Secretary Of The Air Force LPE Semiconductor material transfer method
JPH07115987B2 (ja) * 1986-09-26 1995-12-13 徳三 助川 超構造および多層膜の製作法
TW460604B (en) 1998-10-13 2001-10-21 Winbond Electronics Corp A one-sided and mass production method of liquid phase deposition
CN102995115B (zh) * 2012-12-27 2015-07-29 中国电子科技集团公司第十一研究所 一种用于液相外延生长的石墨舟及液相外延生长方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USRE28140E (en) * 1971-11-29 1974-08-27 Bergh ctal
BE788374A (fr) * 1971-12-08 1973-01-02 Rca Corp Procede de depot d'une couche epitaxiale d'un materiau semi-conducteur sur la surface d'un substrat
US3933538A (en) * 1972-01-18 1976-01-20 Sumitomo Electric Industries, Ltd. Method and apparatus for production of liquid phase epitaxial layers of semiconductors
GB1414060A (en) * 1972-07-28 1975-11-12 Matsushita Electronics Corp Semoconductor devices
JPS5342230B2 (fr) * 1972-10-19 1978-11-09
US3899371A (en) * 1973-06-25 1975-08-12 Rca Corp Method of forming PN junctions by liquid phase epitaxy
US3899137A (en) * 1974-12-17 1975-08-12 Martin Shenker Cleaning device for photo-slides
US4028148A (en) * 1974-12-20 1977-06-07 Nippon Telegraph And Telephone Public Corporation Method of epitaxially growing a laminate semiconductor layer in liquid phase
US4032951A (en) * 1976-04-13 1977-06-28 Bell Telephone Laboratories, Incorporated Growth of iii-v layers containing arsenic, antimony and phosphorus, and device uses

Also Published As

Publication number Publication date
JPS5414669A (en) 1979-02-03
DE2730358B2 (de) 1981-05-27
IT1096839B (it) 1985-08-26
US4149914A (en) 1979-04-17
CA1116312A (fr) 1982-01-12
DE2730358C3 (de) 1982-03-18
EP0000123A1 (fr) 1979-01-10
IT7825180A0 (it) 1978-06-30
JPS6235260B2 (fr) 1987-07-31
DE2730358A1 (de) 1979-01-11

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