JPS5414669A - Method of growing monocrystal layer by slide liquid phase epitaxy - Google Patents

Method of growing monocrystal layer by slide liquid phase epitaxy

Info

Publication number
JPS5414669A
JPS5414669A JP8083378A JP8083378A JPS5414669A JP S5414669 A JPS5414669 A JP S5414669A JP 8083378 A JP8083378 A JP 8083378A JP 8083378 A JP8083378 A JP 8083378A JP S5414669 A JPS5414669 A JP S5414669A
Authority
JP
Japan
Prior art keywords
liquid phase
phase epitaxy
monocrystal layer
slide liquid
growing monocrystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8083378A
Other languages
English (en)
Other versions
JPS6235260B2 (ja
Inventor
Wairitsuhi Kurausu
Hosupu Uerunaa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of JPS5414669A publication Critical patent/JPS5414669A/ja
Publication of JPS6235260B2 publication Critical patent/JPS6235260B2/ja
Granted legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B09—DISPOSAL OF SOLID WASTE; RECLAMATION OF CONTAMINATED SOIL
    • B09B—DISPOSAL OF SOLID WASTE NOT OTHERWISE PROVIDED FOR
    • B09B1/00—Dumping solid waste
    • B09B1/008—Subterranean disposal, e.g. in boreholes or subsurface fractures
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
    • C30B19/063—Sliding boat system
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02395—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02463—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02625—Liquid deposition using melted materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Life Sciences & Earth Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP8083378A 1977-07-05 1978-07-03 Method of growing monocrystal layer by slide liquid phase epitaxy Granted JPS5414669A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2730358A DE2730358C3 (de) 1977-07-05 1977-07-05 Verfahren zum aufeinanderfolgenden Abscheiden einkristalliner Schichten auf einem Substrat nach der Flüssigphasen-Schiebeepitaxie

Publications (2)

Publication Number Publication Date
JPS5414669A true JPS5414669A (en) 1979-02-03
JPS6235260B2 JPS6235260B2 (ja) 1987-07-31

Family

ID=6013202

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8083378A Granted JPS5414669A (en) 1977-07-05 1978-07-03 Method of growing monocrystal layer by slide liquid phase epitaxy

Country Status (6)

Country Link
US (1) US4149914A (ja)
EP (1) EP0000123B1 (ja)
JP (1) JPS5414669A (ja)
CA (1) CA1116312A (ja)
DE (1) DE2730358C3 (ja)
IT (1) IT1096839B (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6381919A (ja) * 1986-09-26 1988-04-12 Tokuzo Sukegawa 超構造および多層膜の製作法

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7712315A (nl) * 1977-11-09 1979-05-11 Philips Nv Werkwijze voor het epitaxiaal neerslaan van verscheidene lagen.
DE3036643C2 (de) * 1980-09-29 1984-09-20 Siemens AG, 1000 Berlin und 8000 München Vorrichtung zur Flüssigphasen-Epitaxie
US4319937A (en) * 1980-11-12 1982-03-16 University Of Illinois Foundation Homogeneous liquid phase epitaxial growth of heterojunction materials
US4342148A (en) * 1981-02-04 1982-08-03 Northern Telecom Limited Contemporaneous fabrication of double heterostructure light emitting diodes and laser diodes using liquid phase epitaxy
US4547230A (en) * 1984-07-30 1985-10-15 The United States Of America As Represented By The Secretary Of The Air Force LPE Semiconductor material transfer method
TW460604B (en) * 1998-10-13 2001-10-21 Winbond Electronics Corp A one-sided and mass production method of liquid phase deposition
CN102995115B (zh) * 2012-12-27 2015-07-29 中国电子科技集团公司第十一研究所 一种用于液相外延生长的石墨舟及液相外延生长方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USRE28140E (en) * 1971-11-29 1974-08-27 Bergh ctal
BE788374A (fr) * 1971-12-08 1973-01-02 Rca Corp Procede de depot d'une couche epitaxiale d'un materiau semi-conducteur sur la surface d'un substrat
US3933538A (en) * 1972-01-18 1976-01-20 Sumitomo Electric Industries, Ltd. Method and apparatus for production of liquid phase epitaxial layers of semiconductors
GB1414060A (en) * 1972-07-28 1975-11-12 Matsushita Electronics Corp Semoconductor devices
JPS5342230B2 (ja) * 1972-10-19 1978-11-09
US3899371A (en) * 1973-06-25 1975-08-12 Rca Corp Method of forming PN junctions by liquid phase epitaxy
US3899137A (en) * 1974-12-17 1975-08-12 Martin Shenker Cleaning device for photo-slides
US4028148A (en) * 1974-12-20 1977-06-07 Nippon Telegraph And Telephone Public Corporation Method of epitaxially growing a laminate semiconductor layer in liquid phase
US4032951A (en) * 1976-04-13 1977-06-28 Bell Telephone Laboratories, Incorporated Growth of iii-v layers containing arsenic, antimony and phosphorus, and device uses

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6381919A (ja) * 1986-09-26 1988-04-12 Tokuzo Sukegawa 超構造および多層膜の製作法

Also Published As

Publication number Publication date
DE2730358C3 (de) 1982-03-18
DE2730358B2 (de) 1981-05-27
EP0000123B1 (de) 1981-02-25
DE2730358A1 (de) 1979-01-11
JPS6235260B2 (ja) 1987-07-31
EP0000123A1 (de) 1979-01-10
IT7825180A0 (it) 1978-06-30
IT1096839B (it) 1985-08-26
US4149914A (en) 1979-04-17
CA1116312A (en) 1982-01-12

Similar Documents

Publication Publication Date Title
JPS5350074A (en) Apparatus for growing silicon single crystal of webbform or sheettform
JPS51144574A (en) Method of growing silicon crystal by pulling up
JPS5260300A (en) Method of growing stngle crystal epitaxial layer of rear earth metalltron garnet
DE3377874D1 (en) Method of growing silicon crystals by the czochralski method
JPS54163672A (en) Method of growing semiconductor compound monocrystal
JPS5420664A (en) Method of selecting crystalline substance for compatible epitaxial growth and device for same substance
JPS5343684A (en) Monocrystalline layer growth
JPS5414669A (en) Method of growing monocrystal layer by slide liquid phase epitaxy
CA1026217A (en) Method of and device for growing epitaxial layers from the liquid phase
JPS54159171A (en) Method of forming epitaxial silicon layer
CA1015578A (en) Method of preparing liquid fertilizer
GB2070455B (en) Apparatus for growing semiconductor layers by liquid phase epitaxy
JPS569298A (en) Method of growing silicon crystal
JPS5619614A (en) Liquid phase epitaxial growing method
JPS55125624A (en) Method of epitaxially growing semiconductor material layer
JPS535100A (en) Method of making single crystal gadlinium gallium
JPS51147251A (en) Method of liquiddphase epitaxial growth
CS191119B1 (en) Method of preparation of the melt useful for the growth of the pure epitaxial layers from the liquid phase
JPS54141560A (en) Method of forming epitaxial layer
JPS52142477A (en) Liquid epitaxial growth method
JPS5296864A (en) Method of transforming slice of polycrystal semiconductor into slice of huge crystal semiconductor
JPS53143164A (en) Method of selectively growing liquid phase
JPS5354549A (en) Growing method of plant
JPS5348003A (en) Process for growing single crystal
JPS53148388A (en) Method of producing compound semiconductor crystal