EA201790348A1 - Способы синтеза производных графена и функциональных материалов из асфальтенов, производных графена, двумерных материалов и области применения - Google Patents

Способы синтеза производных графена и функциональных материалов из асфальтенов, производных графена, двумерных материалов и области применения

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Publication number
EA201790348A1
EA201790348A1 EA201790348A EA201790348A EA201790348A1 EA 201790348 A1 EA201790348 A1 EA 201790348A1 EA 201790348 A EA201790348 A EA 201790348A EA 201790348 A EA201790348 A EA 201790348A EA 201790348 A1 EA201790348 A1 EA 201790348A1
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Eurasian Patent Office
Prior art keywords
graphene
materials
derivatives
graphene derivatives
methods
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EA201790348A
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English (en)
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Оланреваджу В. Танимола
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Оланреваджу В. Танимола
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Publication of EA201790348A1 publication Critical patent/EA201790348A1/ru

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    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/158—Carbon nanotubes
    • C01B32/168—After-treatment
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/182—Graphene
    • C01B32/184—Preparation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • C30B7/02—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions by evaporation of the solvent
    • C30B7/06—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions by evaporation of the solvent using non-aqueous solvents
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/152—Fullerenes
    • C01B32/156—After-treatment
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/182—Graphene
    • C01B32/194—After-treatment
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • C30B7/14—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions the crystallising materials being formed by chemical reactions in the solution
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02W—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO WASTEWATER TREATMENT OR WASTE MANAGEMENT
    • Y02W30/00—Technologies for solid waste management
    • Y02W30/20—Waste processing or separation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02W—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO WASTEWATER TREATMENT OR WASTE MANAGEMENT
    • Y02W30/00—Technologies for solid waste management
    • Y02W30/50—Reuse, recycling or recovery technologies
    • Y02W30/58—Construction or demolition [C&D] waste

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Nanotechnology (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Production Of Liquid Hydrocarbon Mixture For Refining Petroleum (AREA)

Abstract

Приведенные в описании примеры осуществления настоящего изобретения относятся к способам функционализации материалов асфальтена и к композициям, полученным из функционализированного асфальтена. Раскрыт способ синтезирования производных графена, таких как двумерные монокристаллические углеродные аллотропы графена, и функциональных материалов, таких как сульфоновая кислота и ее производные. В описании изобретения также раскрывается способ преобразования асфальтена в источник производных графена и функциональных материалов, таких как, 0D, 1D, 2D и сочетаний 0D и 1D путем использования механизма реакции химического замещения, такого как электрофильное ароматическое замещение, нуклеофильное ароматическое замещение и механизм Зандмейера. Кроме того, в настоящем изобретении раскрыты новые материалы графена, включающие графен с ацетиленовыми связями и гидрогенезированный графен. Указанные новые материалы, которые могут быть получены с помощью приведенных способов, включают, например двумерные монокристаллические углеродные аллотропы графена, имеющие формулы асимметричного элемента CHNO, CHNO, CHOSHO, CHOSH, и двумерный монокристалл с формулой асимметричного элемента - (NaOS).
EA201790348A 2014-08-08 2015-08-10 Способы синтеза производных графена и функциональных материалов из асфальтенов, производных графена, двумерных материалов и области применения EA201790348A1 (ru)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201462035140P 2014-08-08 2014-08-08
PCT/US2015/044530 WO2016023041A2 (en) 2014-08-08 2015-08-10 Methods for synthesis of graphene derivatives and functional materials from asphaltenes, graphene derivatives, 2d materials and applications of use

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EA201790348A1 true EA201790348A1 (ru) 2018-12-28

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EA201790348A EA201790348A1 (ru) 2014-08-08 2015-08-10 Способы синтеза производных графена и функциональных материалов из асфальтенов, производных графена, двумерных материалов и области применения

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US (1) US11479466B2 (ru)
EP (1) EP3177563A4 (ru)
KR (1) KR20170040348A (ru)
CN (1) CN107108219A (ru)
AP (1) AP2017009797A0 (ru)
AU (1) AU2015300742A1 (ru)
CA (2) CA3189208A1 (ru)
EA (1) EA201790348A1 (ru)
PH (1) PH12017500437A1 (ru)
SG (2) SG11201701842UA (ru)
WO (1) WO2016023041A2 (ru)

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CN111351818B (zh) * 2020-04-22 2021-11-12 中山大学 一种气敏传感器及其在二氧化氮气体检测的应用
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CN112777584B (zh) * 2021-01-27 2022-08-09 安徽工业大学 一种石墨烯炔、制备方法及其应用
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US20160039678A1 (en) 2016-02-11
PH12017500437A1 (en) 2017-07-31
SG10201901082VA (en) 2019-03-28
CA3189208A1 (en) 2016-02-11
KR20170040348A (ko) 2017-04-12
AU2015300742A1 (en) 2017-03-30
AP2017009797A0 (en) 2017-03-31
WO2016023041A2 (en) 2016-02-11
US11479466B2 (en) 2022-10-25
EP3177563A4 (en) 2018-09-19
WO2016023041A4 (en) 2016-05-19
WO2016023041A3 (en) 2016-03-31
SG11201701842UA (en) 2017-04-27
CN107108219A (zh) 2017-08-29
EP3177563A2 (en) 2017-06-14
CA2960807A1 (en) 2016-02-11

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