DK163761C - Optisk komponent og hus til en saadan komponent. - Google Patents

Optisk komponent og hus til en saadan komponent.

Info

Publication number
DK163761C
DK163761C DK547384A DK547384A DK163761C DK 163761 C DK163761 C DK 163761C DK 547384 A DK547384 A DK 547384A DK 547384 A DK547384 A DK 547384A DK 163761 C DK163761 C DK 163761C
Authority
DK
Denmark
Prior art keywords
component
house
optical
optical component
Prior art date
Application number
DK547384A
Other languages
Danish (da)
English (en)
Other versions
DK547384A (da
DK163761B (da
DK547384D0 (da
Inventor
Hideaki Nishizawa
Original Assignee
Sumitomo Electric Industries
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP58218964A external-priority patent/JPS60110180A/ja
Priority claimed from JP58223020A external-priority patent/JPS60113978A/ja
Priority claimed from JP58232341A external-priority patent/JPS60124885A/ja
Application filed by Sumitomo Electric Industries filed Critical Sumitomo Electric Industries
Publication of DK547384D0 publication Critical patent/DK547384D0/da
Publication of DK547384A publication Critical patent/DK547384A/da
Publication of DK163761B publication Critical patent/DK163761B/da
Application granted granted Critical
Publication of DK163761C publication Critical patent/DK163761C/da

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24Coupling light guides
    • G02B6/42Coupling light guides with opto-electronic elements
    • G02B6/4201Packages, e.g. shape, construction, internal or external details
    • G02B6/4202Packages, e.g. shape, construction, internal or external details for coupling an active element with fibres without intermediate optical elements, e.g. fibres with plane ends, fibres with shaped ends, bundles
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24Coupling light guides
    • G02B6/42Coupling light guides with opto-electronic elements
    • G02B6/4201Packages, e.g. shape, construction, internal or external details
    • G02B6/4204Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
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    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
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    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/02002Arrangements for conducting electric current to or from the device in operations
    • H01L31/02005Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
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    • H01L31/10Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
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    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/4823Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a pin of the item
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    • H01L2224/48471Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area being a ball bond, i.e. wedge-to-ball, reverse stitch
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    • H01L33/58Optical field-shaping elements
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00Metal working
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    • Y10T29/49002Electrical device making
    • Y10T29/49117Conductor or circuit manufacturing
    • Y10T29/49124On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/4913Assembling to base an electrical component, e.g., capacitor, etc.
    • Y10T29/49144Assembling to base an electrical component, e.g., capacitor, etc. by metal fusion

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Optics & Photonics (AREA)
  • Light Receiving Elements (AREA)
  • Gyroscopes (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
  • Optical Couplings Of Light Guides (AREA)
  • Die Bonding (AREA)
DK547384A 1983-11-21 1984-11-16 Optisk komponent og hus til en saadan komponent. DK163761C (da)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP58218964A JPS60110180A (ja) 1983-11-21 1983-11-21 光素子用パツケ−ジ
JP21896483 1983-11-21
JP22302083 1983-11-25
JP58223020A JPS60113978A (ja) 1983-11-25 1983-11-25 光素子
JP58232341A JPS60124885A (ja) 1983-12-08 1983-12-08 受光ダイオードの製造方法
JP23234183 1983-12-08

Publications (4)

Publication Number Publication Date
DK547384D0 DK547384D0 (da) 1984-11-16
DK547384A DK547384A (da) 1985-05-22
DK163761B DK163761B (da) 1992-03-30
DK163761C true DK163761C (da) 1992-08-24

Family

ID=27330223

Family Applications (2)

Application Number Title Priority Date Filing Date
DK547384A DK163761C (da) 1983-11-21 1984-11-16 Optisk komponent og hus til en saadan komponent.
DK033291A DK33291A (da) 1983-11-21 1991-02-26 Fremgangsmaade til fremstilling af en optisk komponent

Family Applications After (1)

Application Number Title Priority Date Filing Date
DK033291A DK33291A (da) 1983-11-21 1991-02-26 Fremgangsmaade til fremstilling af en optisk komponent

Country Status (8)

Country Link
US (2) US4663652A (de)
EP (2) EP0313174B1 (de)
AU (1) AU592256B2 (de)
CA (1) CA1267468A (de)
DE (2) DE3481571D1 (de)
DK (2) DK163761C (de)
FI (1) FI82999C (de)
NO (1) NO169684C (de)

Families Citing this family (47)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0219359B1 (de) * 1985-10-16 1990-03-07 BRITISH TELECOMMUNICATIONS public limited company Fabry-Perot-Interferometer
US4845052A (en) * 1986-02-07 1989-07-04 Harris Corporation Method of packaging a non-contact I/O signal transmission integrated circuit
US4796975A (en) * 1987-05-14 1989-01-10 Amphenol Corporation Method of aligning and attaching optical fibers to substrate optical waveguides and substrate optical waveguide having fibers attached thereto
US5179430A (en) * 1988-05-24 1993-01-12 Nec Corporation Planar type heterojunction avalanche photodiode
JPH01296676A (ja) * 1988-05-24 1989-11-30 Nec Corp 半導体受光装置
JPH0258008A (ja) * 1988-08-24 1990-02-27 Sumitomo Electric Ind Ltd 光モジュール
JPH0266504A (ja) * 1988-08-31 1990-03-06 Sumitomo Electric Ind Ltd 光送信モジュールの製造装置
GB2228618B (en) * 1989-02-27 1993-04-14 Philips Electronic Associated Radiation detector
JP3067151B2 (ja) * 1990-03-13 2000-07-17 日本電気株式会社 光電気変換素子サブキャリア
FR2685561B1 (fr) * 1991-12-20 1994-02-04 Thomson Hybrides Procede de cablage d'une barrette de lasers et barrette cablee par ce procede.
DE4210331A1 (de) * 1992-03-30 1993-10-07 Bodenseewerk Geraetetech Verbindung einer Fotodiode mit einem Lichtwellenleiter
JP3484543B2 (ja) * 1993-03-24 2004-01-06 富士通株式会社 光結合部材の製造方法及び光装置
US5499312A (en) * 1993-11-09 1996-03-12 Hewlett-Packard Company Passive alignment and packaging of optoelectronic components to optical waveguides using flip-chip bonding technology
US5460318A (en) * 1994-06-01 1995-10-24 Gte Laboratories Incorporated Diebonding geometry for packaging optoelectronics
DE19600306C1 (de) * 1996-01-05 1997-04-10 Siemens Ag Halbleiter-Bauelement, insb. mit einer optoelektronischen Schaltung bzw. Anordnung
DE19621124A1 (de) * 1996-05-24 1997-11-27 Siemens Ag Optoelektronischer Wandler und dessen Herstellungsverfahren
US5822856A (en) * 1996-06-28 1998-10-20 International Business Machines Corporation Manufacturing circuit board assemblies having filled vias
US5867368A (en) * 1997-09-09 1999-02-02 Amkor Technology, Inc. Mounting for a semiconductor integrated circuit device
US5949655A (en) * 1997-09-09 1999-09-07 Amkor Technology, Inc. Mounting having an aperture cover with adhesive locking feature for flip chip optical integrated circuit device
JP2000081524A (ja) * 1998-09-07 2000-03-21 Sony Corp 光送受信システム
US6216939B1 (en) * 1998-12-31 2001-04-17 Jds Uniphase Photonics C.V. Method for making a hermetically sealed package comprising at least one optical fiber feedthrough
US6448635B1 (en) 1999-08-30 2002-09-10 Amkor Technology, Inc. Surface acoustical wave flip chip
US6536958B2 (en) 2000-12-20 2003-03-25 Triquint Technology Holding Co. Optical device package with hermetically bonded fibers
US6564454B1 (en) * 2000-12-28 2003-05-20 Amkor Technology, Inc. Method of making and stacking a semiconductor package
GB2372633A (en) * 2001-02-24 2002-08-28 Mitel Semiconductor Ab Flip-chip mounted optical device
JP2002250846A (ja) * 2001-02-26 2002-09-06 Seiko Epson Corp 光モジュール及びその製造方法並びに光伝達装置
KR100424611B1 (ko) * 2001-04-20 2004-03-27 울트라테라 코포레이션 저형상 감광성 반도체 패키지
FR2832252B1 (fr) * 2001-11-14 2004-03-12 St Microelectronics Sa Boitier semi-conducteur a capteur, muni d'un insert de fixation
JP2004179258A (ja) * 2002-11-25 2004-06-24 Hamamatsu Photonics Kk 紫外線センサ
US7564125B2 (en) * 2002-12-06 2009-07-21 General Electric Company Electronic array and methods for fabricating same
DE10308890A1 (de) * 2003-02-28 2004-09-09 Opto Tech Corporation Gehäusestruktur für eine Lichtemissionsdiode und Verfahren zu dessen Herstellung
US6883978B2 (en) * 2003-06-26 2005-04-26 Matsushita Electric Industrial Co., Ltd. Low cost package design for fiber coupled optical component
US7284913B2 (en) 2003-07-14 2007-10-23 Matsushita Electric Industrial Co., Ltd. Integrated fiber attach pad for optical package
US7410088B2 (en) * 2003-09-05 2008-08-12 Matsushita Electric Industrial, Co., Ltd. Solder preform for low heat stress laser solder attachment
US7021838B2 (en) 2003-12-16 2006-04-04 Matsushita Electric Industrial Co., Ltd. Optimizing alignment of an optical fiber to an optical output port
US7140783B2 (en) * 2004-02-06 2006-11-28 Matsushita Electric Industrial Co., Ltd. Diamond 2D scan for aligning an optical fiber to an optical output port
US20050202826A1 (en) * 2004-03-12 2005-09-15 Coretek Opto Corp. Optical subassembly
DE102004039883B3 (de) * 2004-08-17 2006-06-14 Schott Ag Transparentes Element, insbesondere Verbundglaselement, und Verfahren zum Tausch eines Verbrauchers darin
US7263260B2 (en) * 2005-03-14 2007-08-28 Matsushita Electric Industrial Co., Ltd. Low cost, high precision multi-point optical component attachment
JP2007165811A (ja) 2005-12-16 2007-06-28 Nichia Chem Ind Ltd 発光装置
JP2007201361A (ja) * 2006-01-30 2007-08-09 Shinko Electric Ind Co Ltd 半導体装置及び半導体装置の製造方法
US20080012087A1 (en) * 2006-04-19 2008-01-17 Henri Dautet Bonded wafer avalanche photodiode and method for manufacturing same
EP2095434B1 (de) * 2006-12-18 2019-06-12 Signify Holding B.V. Led-basierte beleuchtungseinrichtung auf einem transparenten substrat
US7514724B2 (en) * 2007-03-23 2009-04-07 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. Solid state light source having a variable number of dies
CN102024717B (zh) 2010-08-21 2012-03-07 比亚迪股份有限公司 一种半导体芯片的共晶方法及共晶结构
DE102017126109A1 (de) * 2017-11-08 2019-05-09 Osram Opto Semiconductors Gmbh Licht emittierendes Bauelement und Verfahren zur Herstellung eines Licht emittierenden Bauelements
FR3094141A1 (fr) * 2019-03-18 2020-09-25 Commissariat à l'Energie Atomique et aux Energies Alternatives procede de fabrication d’un composant optoelectronique a transmission optique en face arriere

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3757127A (en) * 1970-08-10 1973-09-04 Cogar Corp Photodetector packing assembly
US3959522A (en) * 1975-04-30 1976-05-25 Rca Corporation Method for forming an ohmic contact
GB2026235B (en) * 1978-06-06 1982-07-21 Nippon Electric Co Light emitting diode mounting structure for optical fibre communications
JPS5513963A (en) * 1978-07-17 1980-01-31 Nec Corp Photo semiconductor device
US4268113A (en) * 1979-04-16 1981-05-19 International Business Machines Corporation Signal coupling element for substrate-mounted optical transducers
FR2466866A1 (fr) * 1979-10-05 1981-04-10 Thomson Csf Procede de couplage entre une fibre optique et une diode opto-electronique, et tete d'emission ou de reception realisee par ce procede
JPS5660037A (en) * 1979-10-22 1981-05-23 Mitsubishi Electric Corp Semiconductor device
FR2494044A1 (fr) * 1980-11-12 1982-05-14 Thomson Csf Phototransistor a heterojonction en technologie planar et procede de fabrication d'un tel phototransistor
US4355321A (en) * 1981-02-02 1982-10-19 Varian Associates, Inc. Optoelectronic assembly including light transmissive single crystal semiconductor window
JPS5891644A (ja) * 1981-11-26 1983-05-31 Toshiba Corp 半導体装置
JPS58128762A (ja) * 1982-01-27 1983-08-01 Fujitsu Ltd 半導体装置
JPS58158950A (ja) * 1982-03-16 1983-09-21 Nec Corp 半導体装置
JPS59220982A (ja) * 1983-05-31 1984-12-12 Sumitomo Electric Ind Ltd 光素子用パッケ−ジ

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DK33291D0 (da) 1991-02-26
CA1267468C (en) 1990-04-03
DK547384A (da) 1985-05-22
DK163761B (da) 1992-03-30
EP0313174A3 (en) 1989-11-15
EP0313174A2 (de) 1989-04-26
DE3486214T2 (de) 1994-01-13
FI82999B (fi) 1991-01-31
US4727649A (en) 1988-03-01
FI844473L (fi) 1985-05-22
FI844473A0 (fi) 1984-11-14
EP0313174B1 (de) 1993-09-22
DK33291A (da) 1991-02-26
EP0145316A2 (de) 1985-06-19
FI82999C (fi) 1991-05-10
EP0145316B1 (de) 1990-03-07
US4663652A (en) 1987-05-05
AU1319788A (en) 1988-06-09
DE3486214D1 (de) 1993-10-28
CA1267468A (en) 1990-04-03
AU592256B2 (en) 1990-01-04
EP0145316A3 (en) 1986-07-30
NO169684C (no) 1992-07-22
NO169684B (no) 1992-04-13
DK547384D0 (da) 1984-11-16
DE3481571D1 (de) 1990-04-12
NO844596L (no) 1985-05-22

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