DK0864171T3 - Dannelse af kontakter på halvledersubstrater til strålingsdetektorer og billedregistreringsindretninger - Google Patents
Dannelse af kontakter på halvledersubstrater til strålingsdetektorer og billedregistreringsindretningerInfo
- Publication number
- DK0864171T3 DK0864171T3 DK96941641T DK96941641T DK0864171T3 DK 0864171 T3 DK0864171 T3 DK 0864171T3 DK 96941641 T DK96941641 T DK 96941641T DK 96941641 T DK96941641 T DK 96941641T DK 0864171 T3 DK0864171 T3 DK 0864171T3
- Authority
- DK
- Denmark
- Prior art keywords
- substrate
- layer
- forming
- image sensing
- sensing devices
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title abstract 7
- 230000005855 radiation Effects 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000000034 method Methods 0.000 abstract 4
- 239000000463 material Substances 0.000 abstract 3
- 239000002184 metal Substances 0.000 abstract 3
- 229910052751 metal Inorganic materials 0.000 abstract 3
- 229910004611 CdZnTe Inorganic materials 0.000 abstract 1
- 230000015556 catabolic process Effects 0.000 abstract 1
- 238000006731 degradation reaction Methods 0.000 abstract 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 1
- 239000010931 gold Substances 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 abstract 1
- 238000002161 passivation Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823406—Combination of charge coupled devices, i.e. CCD, or BBD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/93—Ternary or quaternary semiconductor comprised of elements from three different groups, e.g. I-III-V
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/958—Passivation layer
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- Light Receiving Elements (AREA)
- Measurement Of Radiation (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Electrodes Of Semiconductors (AREA)
- Apparatus For Radiation Diagnosis (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB9524387A GB2307785B (en) | 1995-11-29 | 1995-11-29 | Forming contacts on semiconductor substrates for radiation detectors and imaging devices |
PCT/EP1996/005348 WO1997020342A1 (en) | 1995-11-29 | 1996-11-26 | Forming contacts on semiconductor substrates for radiation detectors and imaging devices |
Publications (1)
Publication Number | Publication Date |
---|---|
DK0864171T3 true DK0864171T3 (da) | 2001-01-29 |
Family
ID=10784628
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DK96941641T DK0864171T3 (da) | 1995-11-29 | 1996-11-26 | Dannelse af kontakter på halvledersubstrater til strålingsdetektorer og billedregistreringsindretninger |
Country Status (17)
Country | Link |
---|---|
US (2) | US6046068A (no) |
EP (2) | EP0864171B1 (no) |
JP (2) | JP3540325B2 (no) |
CN (1) | CN1113392C (no) |
AT (1) | ATE198679T1 (no) |
AU (1) | AU713954B2 (no) |
CA (1) | CA2238827C (no) |
DE (1) | DE69611540T2 (no) |
DK (1) | DK0864171T3 (no) |
ES (1) | ES2154850T3 (no) |
GB (1) | GB2307785B (no) |
GR (1) | GR3035628T3 (no) |
HK (2) | HK1004243A1 (no) |
IL (2) | IL124656A0 (no) |
NO (1) | NO982444L (no) |
PT (1) | PT864171E (no) |
WO (1) | WO1997020342A1 (no) |
Families Citing this family (40)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2289983B (en) | 1994-06-01 | 1996-10-16 | Simage Oy | Imaging devices,systems and methods |
GB2352084B (en) * | 1999-07-13 | 2002-11-13 | Simage Oy | Forming contacts on semiconductor substrates for radiation detectors and imaging devices |
US6410922B1 (en) * | 1995-11-29 | 2002-06-25 | Konstantinos Evangelos Spartiotis | Forming contacts on semiconductor substrates for radiation detectors and imaging devices |
US20020158207A1 (en) * | 1996-11-26 | 2002-10-31 | Simage, Oy. | Forming contacts on semiconductor substrates for radiation detectors and imaging devices |
GB2325081B (en) * | 1997-05-06 | 2000-01-26 | Simage Oy | Semiconductor imaging device |
US7001849B2 (en) * | 1998-07-16 | 2006-02-21 | Sandia National Laboratories | Surface treatment and protection method for cadmium zinc telluride crystals |
US9029793B2 (en) | 1998-11-05 | 2015-05-12 | Siemens Aktiengesellschaft | Imaging device |
GB2344550A (en) * | 1998-12-09 | 2000-06-14 | Ibm | Pad design for electronic package |
US6284561B1 (en) * | 1999-10-08 | 2001-09-04 | United Microelectronics Corp. | Method of forming a metal plate of a fingerprint sensor chip on a semiconductor wafer |
FI120561B (fi) * | 2000-03-07 | 2009-11-30 | Planmeca Oy | Digitaalikamera, kuvantamislaite ja menetelmä digitaalisessa kuvantamisessa |
JP2002246582A (ja) * | 2000-10-26 | 2002-08-30 | Canon Inc | 放射線検出装置、その製造方法及びシステム |
IL143853A0 (en) * | 2001-06-19 | 2002-04-21 | Real Time Radiography Ltd | Laminated radiation detector and process for its fabrication |
US6781132B2 (en) * | 2001-08-10 | 2004-08-24 | The Regents Of The University Of Michigan | Collimated radiation detector assembly, array of collimated radiation detectors and collimated radiation detector module |
US7170062B2 (en) | 2002-03-29 | 2007-01-30 | Oy Ajat Ltd. | Conductive adhesive bonded semiconductor substrates for radiation imaging devices |
GB0224689D0 (en) * | 2002-10-23 | 2002-12-04 | Simage Oy | Formation of contacts on semiconductor substrates |
US7872237B2 (en) | 2002-10-25 | 2011-01-18 | Ipl Intellectual Property Licensing Limited | Circuit substrate and method |
US7223981B1 (en) * | 2002-12-04 | 2007-05-29 | Aguila Technologies Inc. | Gamma ray detector modules |
US7763820B1 (en) | 2003-01-27 | 2010-07-27 | Spectramet, Llc | Sorting pieces of material based on photonic emissions resulting from multiple sources of stimuli |
US20060033029A1 (en) * | 2004-08-13 | 2006-02-16 | V-Target Technologies Ltd. | Low-voltage, solid-state, ionizing-radiation detector |
CN1328598C (zh) * | 2005-01-26 | 2007-07-25 | 上海大学 | 共面栅阳极碲锌镉探测器的制备方法 |
EP1891465A4 (en) * | 2005-05-16 | 2011-11-30 | Ev Products Inc | GAMMA RAY DETECTOR AND HIGH PERFORMANCE CDXZN1-XTE X-RAY DETECTOR AND PROCESS FOR MANUFACTURING THE SAME |
CA2541256A1 (en) * | 2006-02-22 | 2007-08-22 | Redlen Technologies Inc. | Shielding electrode for monolithic radiation detector |
GB0615452D0 (en) * | 2006-08-03 | 2006-09-13 | Radiation Watch Ltd | Sensors |
DE102006046314A1 (de) * | 2006-09-29 | 2008-04-03 | Siemens Ag | Strahlungsdirektkonvertermodul und Strahlungsdirektkonverter |
US7589324B2 (en) * | 2006-12-21 | 2009-09-15 | Redlen Technologies | Use of solder mask as a protective coating for radiation detector |
US7462833B2 (en) * | 2007-04-17 | 2008-12-09 | Redlen Technologies | Multi-functional cathode packaging design for solid-state radiation detectors |
EP2193533B1 (en) | 2007-06-29 | 2011-05-25 | Koninklijke Philips Electronics N.V. | Electrical contact for a cadmium tellurium component |
US7955992B2 (en) * | 2008-08-08 | 2011-06-07 | Redlen Technologies, Inc. | Method of passivating and encapsulating CdTe and CZT segmented detectors |
US8614423B2 (en) * | 2009-02-02 | 2013-12-24 | Redlen Technologies, Inc. | Solid-state radiation detector with improved sensitivity |
US9202961B2 (en) | 2009-02-02 | 2015-12-01 | Redlen Technologies | Imaging devices with solid-state radiation detector with improved sensitivity |
JP2010210590A (ja) * | 2009-03-12 | 2010-09-24 | Fujifilm Corp | 放射線検出器 |
KR101690059B1 (ko) | 2009-05-14 | 2016-12-27 | 데비코어 메디컬 프로덕츠, 인코포레이티드 | 광자 방출 검출용 스택 크리스탈 어레이 |
US8476101B2 (en) * | 2009-12-28 | 2013-07-02 | Redlen Technologies | Method of fabricating patterned CZT and CdTe devices |
US9000389B2 (en) * | 2011-11-22 | 2015-04-07 | General Electric Company | Radiation detectors and methods of fabricating radiation detectors |
WO2015157124A1 (en) | 2014-04-07 | 2015-10-15 | Flir Systems, Inc. | Method and systems for coupling semiconductor substrates |
DE102014211602B4 (de) * | 2014-06-17 | 2018-10-25 | Siemens Healthcare Gmbh | Detektormodul für einen Röntgendetektor |
WO2016132242A1 (en) | 2015-02-17 | 2016-08-25 | Redlen Technologies, Inc. | High-performance radiation detectors and methods of fabricating thereof |
KR101835089B1 (ko) | 2015-11-16 | 2018-03-08 | 주식회사 디알텍 | 방사선 검출장치와 이를 포함하는 방사선 촬영장치 |
US11378701B2 (en) | 2019-10-08 | 2022-07-05 | Redlen Technologies, Inc. | Low dark current radiation detector and method of making the same |
US11733408B2 (en) | 2020-04-28 | 2023-08-22 | Redlen Technologies, Inc. | High-performance radiation detectors and methods of fabricating thereof |
Family Cites Families (22)
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US4677740A (en) * | 1973-06-29 | 1987-07-07 | Hughes Aircraft Company | Forming monolithic planar opto-isolators by selective implantation and proton bombardment |
JPS5623783A (en) * | 1979-08-01 | 1981-03-06 | Matsushita Electronics Corp | Formation of electrode for semiconductor device |
US4369458A (en) * | 1980-07-01 | 1983-01-18 | Westinghouse Electric Corp. | Self-aligned, flip-chip focal plane array configuration |
EP0068652B1 (en) * | 1981-06-24 | 1988-05-25 | The Secretary of State for Defence in Her Britannic Majesty's Government of the United Kingdom of Great Britain and | Photo diodes |
JPS59227168A (ja) * | 1983-06-08 | 1984-12-20 | Fuji Electric Corp Res & Dev Ltd | 半導体放射線検出器 |
JPS604214A (ja) * | 1983-06-22 | 1985-01-10 | Toshiba Corp | 半導体装置の製造方法 |
JPS6226812A (ja) * | 1985-07-26 | 1987-02-04 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
US4670097A (en) * | 1985-12-23 | 1987-06-02 | Gte Products Corporation | Method for patterning transparent layers on a transparent substrate |
JPS62274715A (ja) * | 1986-05-23 | 1987-11-28 | Nec Corp | 半導体装置の製造方法 |
JPS63181481A (ja) * | 1987-01-23 | 1988-07-26 | Matsushita Electric Ind Co Ltd | 半導体放射線検出器 |
JPS63299120A (ja) * | 1987-05-28 | 1988-12-06 | Mitsubishi Electric Corp | 半導体装置の電極形成方法 |
JPH0240968A (ja) * | 1988-07-29 | 1990-02-09 | Matsushita Electric Ind Co Ltd | 半導体放射線検出器およびその製造方法 |
JPH02232978A (ja) * | 1989-03-07 | 1990-09-14 | Matsushita Electric Ind Co Ltd | 半導体放射線検出器及びその製造方法 |
DE69013104T2 (de) * | 1989-07-29 | 1995-03-23 | Shimadzu Corp., Kyoto | Halbleiterstrahlungsbilddetektor und sein Herstellungsverfahren. |
US5006488A (en) * | 1989-10-06 | 1991-04-09 | International Business Machines Corporation | High temperature lift-off process |
US5057439A (en) * | 1990-02-12 | 1991-10-15 | Electric Power Research Institute | Method of fabricating polysilicon emitters for solar cells |
GB9015820D0 (en) * | 1990-07-18 | 1990-09-05 | Raychem Ltd | Processing microchips |
US5296407A (en) * | 1990-08-30 | 1994-03-22 | Seiko Epson Corporation | Method of manufacturing a contact structure for integrated circuits |
US5270263A (en) * | 1991-12-20 | 1993-12-14 | Micron Technology, Inc. | Process for depositing aluminum nitride (AlN) using nitrogen plasma sputtering |
US5528495A (en) * | 1993-09-01 | 1996-06-18 | Schlumberger Technology Corporation | Cadmium zinc telluride borehole detector |
GB2289983B (en) * | 1994-06-01 | 1996-10-16 | Simage Oy | Imaging devices,systems and methods |
KR987001092A (ko) * | 1994-12-23 | 1998-04-30 | 엘. 린그렌 클린턴 | 반도체 감마 선 카메라 및 의학 화상 시스템(Semiconductor Gamma-Ray Camera and Medical Imaging System) |
-
1995
- 1995-11-29 GB GB9524387A patent/GB2307785B/en not_active Expired - Fee Related
-
1996
- 1996-11-26 WO PCT/EP1996/005348 patent/WO1997020342A1/en active IP Right Grant
- 1996-11-26 IL IL12465696A patent/IL124656A0/xx unknown
- 1996-11-26 AT AT96941641T patent/ATE198679T1/de not_active IP Right Cessation
- 1996-11-26 DK DK96941641T patent/DK0864171T3/da active
- 1996-11-26 US US08/755,826 patent/US6046068A/en not_active Expired - Lifetime
- 1996-11-26 JP JP52019097A patent/JP3540325B2/ja not_active Expired - Lifetime
- 1996-11-26 CN CN96198687.5A patent/CN1113392C/zh not_active Expired - Lifetime
- 1996-11-26 PT PT96941641T patent/PT864171E/pt unknown
- 1996-11-26 AU AU10967/97A patent/AU713954B2/en not_active Ceased
- 1996-11-26 ES ES96941641T patent/ES2154850T3/es not_active Expired - Lifetime
- 1996-11-26 DE DE69611540T patent/DE69611540T2/de not_active Expired - Lifetime
- 1996-11-26 CA CA002238827A patent/CA2238827C/en not_active Expired - Fee Related
- 1996-11-26 EP EP96941641A patent/EP0864171B1/en not_active Expired - Lifetime
- 1996-11-26 EP EP99124797A patent/EP1001469A3/en not_active Ceased
-
1998
- 1998-02-04 HK HK98100795A patent/HK1004243A1/xx not_active IP Right Cessation
- 1998-05-26 IL IL12465698A patent/IL124656A/en not_active IP Right Cessation
- 1998-05-28 NO NO982444A patent/NO982444L/no not_active Application Discontinuation
- 1998-10-21 HK HK98111398A patent/HK1010282A1/xx not_active IP Right Cessation
-
1999
- 1999-10-19 US US09/421,115 patent/US6215123B1/en not_active Expired - Lifetime
-
2001
- 2001-03-23 GR GR20010400473T patent/GR3035628T3/el not_active IP Right Cessation
-
2002
- 2002-12-25 JP JP2002375430A patent/JP2003229555A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
EP1001469A2 (en) | 2000-05-17 |
GR3035628T3 (en) | 2001-06-29 |
GB9524387D0 (en) | 1996-01-31 |
NO982444L (no) | 1998-07-29 |
EP0864171A1 (en) | 1998-09-16 |
IL124656A0 (en) | 1998-12-06 |
CA2238827C (en) | 2002-10-29 |
GB2307785A (en) | 1997-06-04 |
DE69611540T2 (de) | 2001-04-26 |
JP2003229555A (ja) | 2003-08-15 |
US6215123B1 (en) | 2001-04-10 |
GB2307785B (en) | 1998-04-29 |
IL124656A (en) | 2001-10-31 |
CN1203695A (zh) | 1998-12-30 |
AU1096797A (en) | 1997-06-19 |
US6046068A (en) | 2000-04-04 |
DE69611540D1 (de) | 2001-02-15 |
AU713954B2 (en) | 1999-12-16 |
PT864171E (pt) | 2001-05-31 |
CA2238827A1 (en) | 1997-06-05 |
NO982444D0 (no) | 1998-05-28 |
EP0864171B1 (en) | 2001-01-10 |
JP2000516392A (ja) | 2000-12-05 |
HK1004243A1 (en) | 1998-11-20 |
WO1997020342A1 (en) | 1997-06-05 |
ATE198679T1 (de) | 2001-01-15 |
ES2154850T3 (es) | 2001-04-16 |
HK1010282A1 (en) | 1999-06-17 |
CN1113392C (zh) | 2003-07-02 |
EP1001469A3 (en) | 2000-09-06 |
JP3540325B2 (ja) | 2004-07-07 |
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