DE727015C - Sperrschichtgleichrichter - Google Patents
SperrschichtgleichrichterInfo
- Publication number
- DE727015C DE727015C DEN37728D DEN0037728D DE727015C DE 727015 C DE727015 C DE 727015C DE N37728 D DEN37728 D DE N37728D DE N0037728 D DEN0037728 D DE N0037728D DE 727015 C DE727015 C DE 727015C
- Authority
- DE
- Germany
- Prior art keywords
- selenium
- additives
- rectifier
- conductivity
- substances
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims description 28
- 239000011669 selenium Substances 0.000 claims description 28
- 229910052711 selenium Inorganic materials 0.000 claims description 28
- 239000000654 additive Substances 0.000 claims description 11
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 150000003839 salts Chemical class 0.000 claims description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 5
- 239000000126 substance Substances 0.000 description 9
- TZCXTZWJZNENPQ-UHFFFAOYSA-L barium sulfate Chemical compound [Ba+2].[O-]S([O-])(=O)=O TZCXTZWJZNENPQ-UHFFFAOYSA-L 0.000 description 8
- OSGAYBCDTDRGGQ-UHFFFAOYSA-L calcium sulfate Chemical compound [Ca+2].[O-]S([O-])(=O)=O OSGAYBCDTDRGGQ-UHFFFAOYSA-L 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 235000000346 sugar Nutrition 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- JMANVNJQNLATNU-UHFFFAOYSA-N oxalonitrile Chemical compound N#CC#N JMANVNJQNLATNU-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910001369 Brass Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 235000016127 added sugars Nutrition 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 159000000009 barium salts Chemical class 0.000 description 1
- SJPVUFMOBDBTHQ-UHFFFAOYSA-N barium(2+);dioxido(dioxo)tungsten Chemical compound [Ba+2].[O-][W]([O-])(=O)=O SJPVUFMOBDBTHQ-UHFFFAOYSA-N 0.000 description 1
- 239000010951 brass Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 150000001879 copper Chemical class 0.000 description 1
- 229910001610 cryolite Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000004570 mortar (masonry) Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- JPJALAQPGMAKDF-UHFFFAOYSA-N selenium dioxide Chemical compound O=[Se]=O JPJALAQPGMAKDF-UHFFFAOYSA-N 0.000 description 1
- 150000003346 selenoethers Chemical class 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- -1 sodium and lithium Chemical class 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/01—Manufacture or treatment
- H10D48/04—Manufacture or treatment of devices having bodies comprising selenium or tellurium in uncombined form
- H10D48/043—Preliminary treatment of the selenium or tellurium, its application to foundation plates or the subsequent treatment of the combination
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S252/00—Compositions
- Y10S252/95—Doping agent source material
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Thermistors And Varistors (AREA)
- Lubricants (AREA)
- Organic Insulating Materials (AREA)
- Electrolytic Production Of Metals (AREA)
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DEN37728D DE727015C (de) | 1935-02-06 | 1935-02-06 | Sperrschichtgleichrichter |
GB33650/35A GB448672A (en) | 1935-02-06 | 1935-12-04 | Improvements in or relating to electric detectors and other electrode systems |
BE413058D BE413058A (en, 2012) | 1935-02-06 | 1935-12-30 | |
FR800197D FR800197A (fr) | 1935-02-06 | 1935-12-31 | Système d'électrodes comportant une électrode en sélénium |
US62639A US2137316A (en) | 1935-02-06 | 1936-02-06 | Electrode system and method of making same |
NL76457A NL47023C (en, 2012) | 1935-02-06 | 1936-02-06 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DEN37728D DE727015C (de) | 1935-02-06 | 1935-02-06 | Sperrschichtgleichrichter |
Publications (1)
Publication Number | Publication Date |
---|---|
DE727015C true DE727015C (de) | 1942-10-24 |
Family
ID=6538169
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DEN37728D Expired DE727015C (de) | 1935-02-06 | 1935-02-06 | Sperrschichtgleichrichter |
Country Status (6)
Country | Link |
---|---|
US (1) | US2137316A (en, 2012) |
BE (1) | BE413058A (en, 2012) |
DE (1) | DE727015C (en, 2012) |
FR (1) | FR800197A (en, 2012) |
GB (1) | GB448672A (en, 2012) |
NL (1) | NL47023C (en, 2012) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE754795C (de) * | 1936-10-19 | 1952-10-13 | Siemens Schuckertwerke A G | Verfahren zur Herstellung von Selengleichrichtern |
BE478832A (en, 2012) * | 1942-07-02 | 1900-01-01 | ||
US2419237A (en) * | 1945-01-18 | 1947-04-22 | Bell Telephone Labor Inc | Translating material and device and method of making them |
US2453763A (en) * | 1945-07-07 | 1948-11-16 | Ruben Samuel | Selenium rectifier and process for making same |
US2554237A (en) * | 1945-10-29 | 1951-05-22 | Westinghouse Electric Corp | Rectifier |
FR954731A (en, 2012) * | 1946-10-30 | 1950-01-05 | ||
US2766210A (en) * | 1949-05-06 | 1956-10-09 | Sylvania Electric Prod | Manufacture of selenium elements |
US2555247A (en) * | 1949-07-28 | 1951-05-29 | Vickers Inc | Semiconductive cell |
US2610386A (en) * | 1949-07-28 | 1952-09-16 | Vickers Inc | Semiconductive cell |
NL159214B (nl) * | 1950-02-14 | Sony Corp | Magnetische opneem- en/of weergeefinrichting met ten minste een draaibare kop voorzien van een fluxafscherming. | |
US2740925A (en) * | 1952-02-18 | 1956-04-03 | Int Rectifier Corp | Tellurium rectifier and method of making it |
US3515629A (en) * | 1966-09-30 | 1970-06-02 | Raytheon Co | Electrical device having intermediate dielectric layer |
-
1935
- 1935-02-06 DE DEN37728D patent/DE727015C/de not_active Expired
- 1935-12-04 GB GB33650/35A patent/GB448672A/en not_active Expired
- 1935-12-30 BE BE413058D patent/BE413058A/xx unknown
- 1935-12-31 FR FR800197D patent/FR800197A/fr not_active Expired
-
1936
- 1936-02-06 US US62639A patent/US2137316A/en not_active Expired - Lifetime
- 1936-02-06 NL NL76457A patent/NL47023C/xx active
Also Published As
Publication number | Publication date |
---|---|
GB448672A (en) | 1936-06-12 |
NL47023C (en, 2012) | 1939-11-15 |
BE413058A (en, 2012) | 1936-01-21 |
US2137316A (en) | 1938-11-22 |
FR800197A (fr) | 1936-06-29 |
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