DE69935951D1 - Verfahren zur Dotierung von gesinterten Tantal- und Niobiumpellets für Kondensatoren - Google Patents

Verfahren zur Dotierung von gesinterten Tantal- und Niobiumpellets für Kondensatoren

Info

Publication number
DE69935951D1
DE69935951D1 DE69935951T DE69935951T DE69935951D1 DE 69935951 D1 DE69935951 D1 DE 69935951D1 DE 69935951 T DE69935951 T DE 69935951T DE 69935951 T DE69935951 T DE 69935951T DE 69935951 D1 DE69935951 D1 DE 69935951D1
Authority
DE
Germany
Prior art keywords
pellets
doping
nitrogen
niobium
capacitors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69935951T
Other languages
English (en)
Other versions
DE69935951T2 (de
Inventor
Yuri L Pozdeev-Freeman
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Vishay Sprague Inc
Original Assignee
Vishay Sprague Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Vishay Sprague Inc filed Critical Vishay Sprague Inc
Application granted granted Critical
Publication of DE69935951D1 publication Critical patent/DE69935951D1/de
Publication of DE69935951T2 publication Critical patent/DE69935951T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/004—Details
    • H01G9/04—Electrodes or formation of dielectric layers thereon
    • H01G9/048—Electrodes or formation of dielectric layers thereon characterised by their structure
    • H01G9/052—Sintered electrodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Powder Metallurgy (AREA)
  • Manufacture And Refinement Of Metals (AREA)
  • Ceramic Products (AREA)
DE69935951T 1998-09-03 1999-02-03 Verfahren zur Dotierung von gesinterten Tantal- und Niobiumpellets für Kondensatoren Expired - Fee Related DE69935951T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US146685 1998-09-03
US09/146,685 US6185090B1 (en) 1997-01-29 1998-09-03 Method for doping sintered tantalum and niobium pellets with nitrogen

Publications (2)

Publication Number Publication Date
DE69935951D1 true DE69935951D1 (de) 2007-06-14
DE69935951T2 DE69935951T2 (de) 2008-01-10

Family

ID=22518523

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69935951T Expired - Fee Related DE69935951T2 (de) 1998-09-03 1999-02-03 Verfahren zur Dotierung von gesinterten Tantal- und Niobiumpellets für Kondensatoren

Country Status (5)

Country Link
US (2) US6185090B1 (de)
EP (1) EP0984469B1 (de)
JP (1) JP2000091165A (de)
AT (1) ATE361538T1 (de)
DE (1) DE69935951T2 (de)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6051044A (en) 1998-05-04 2000-04-18 Cabot Corporation Nitrided niobium powders and niobium electrolytic capacitors
US6515846B1 (en) * 1999-02-08 2003-02-04 H.C. Starck, Inc. Capacitor substrates made of refractory metal nitrides
US6375704B1 (en) 1999-05-12 2002-04-23 Cabot Corporation High capacitance niobium powders and electrolytic capacitor anodes
RU2246376C2 (ru) * 2000-03-01 2005-02-20 Кабот Корпорейшн Азотированные вентильные металлы и способы их получения
CN100477040C (zh) * 2000-08-10 2009-04-08 昭和电工株式会社 铌粉、铌烧结体以及使用该烧结体的电容器
US6554884B1 (en) 2000-10-24 2003-04-29 H.C. Starck, Inc. Tantalum and tantalum nitride powder mixtures for electrolytic capacitors substrates
US6447570B1 (en) * 2000-11-30 2002-09-10 Vishay Sprague, Inc. Sintered Tantalum and Niobium capacitor pellets doped with Nitrogen, and method of making the same
BRPI0206094B1 (pt) * 2001-10-02 2016-10-25 Showa Denko Kk pó de nióbio, corpo sinterizado do mesmo, produto quimicamente modificado do mesmo e capacitor utilizando os mesmos
JP3971266B2 (ja) * 2002-08-02 2007-09-05 ローム株式会社 Ｎｂコンデンサおよびこれの製造方法
EP1661150A4 (de) * 2003-08-20 2009-05-27 Showa Denko Kk Chip-festelektrolyt-kondensator und herstellungsverfahren dafür
US6914770B1 (en) 2004-03-02 2005-07-05 Vishay Sprague, Inc. Surface mount flipchip capacitor
US7088573B2 (en) * 2004-03-02 2006-08-08 Vishay Sprague, Inc. Surface mount MELF capacitor
US7085127B2 (en) * 2004-03-02 2006-08-01 Vishay Sprague, Inc. Surface mount chip capacitor
US20080144257A1 (en) * 2006-12-18 2008-06-19 Yuri Freeman Anodes for electrolytic capacitors with high volumetric efficiency
US7731893B2 (en) * 2006-12-18 2010-06-08 Kemet Electronics Corporation Method for making anodes for electrolytic capacitor with high volumetric efficiency
US20090279233A1 (en) 2008-05-12 2009-11-12 Yuri Freeman High volumetric efficiency anodes for electrolytic capacitors
US8379371B2 (en) * 2011-05-20 2013-02-19 Kemet Electronics Corporation Utilization of moisture in hermetically sealed solid electrolytic capacitor and capacitors made thereof
US8349030B1 (en) 2011-09-21 2013-01-08 Kemet Electronics Corporation Method for making anodes for high voltage electrolytic capacitors with high volumetric efficiency and stable D.C. leakage
CN116072434B (zh) * 2023-03-02 2024-05-03 福建火炬电子科技股份有限公司 一种无湿敏等级的片式高分子钽固定电容器及其制备方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3789274A (en) 1972-07-24 1974-01-29 Sprague Electric Co Solid electrolytic capacitors having hard solder cathode coating
US4164455A (en) 1976-04-05 1979-08-14 Corning Glass Works Process of forming a solid tantalum capacitor
EP0072603B1 (de) 1978-06-14 1986-10-01 Fujitsu Limited Verfahren zur Herstellung einer Halbleiteranordnung mit einer Isolierschicht aus Siliziumdioxid, die mit einer Schicht aus Siliziumoxynitrid bedeckt ist
US5569619A (en) 1992-06-24 1996-10-29 Lg Semicon Co., Ltd. Method for forming a capacitor of a semiconductor memory cell
US5275974A (en) 1992-07-30 1994-01-04 Northern Telecom Limited Method of forming electrodes for trench capacitors
US5330931A (en) 1993-09-22 1994-07-19 Northern Telecom Limited Method of making a capacitor for an integrated circuit
US5554870A (en) 1994-02-04 1996-09-10 Motorola, Inc. Integrated circuit having both vertical and horizontal devices and process for making the same
US5622746A (en) 1995-03-07 1997-04-22 Kemet Electronics Corporation Tantalum capacitor impregnation process
US5825611A (en) * 1997-01-29 1998-10-20 Vishay Sprague, Inc. Doped sintered tantalum pellets with nitrogen in a capacitor

Also Published As

Publication number Publication date
DE69935951T2 (de) 2008-01-10
EP0984469A2 (de) 2000-03-08
JP2000091165A (ja) 2000-03-31
ATE361538T1 (de) 2007-05-15
US6185090B1 (en) 2001-02-06
US6410083B1 (en) 2002-06-25
EP0984469B1 (de) 2007-05-02
EP0984469A3 (de) 2001-11-28

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee