DE69927935T2 - Verfahren und einrichtung zum chemisch-mechanischem polieren - Google Patents

Verfahren und einrichtung zum chemisch-mechanischem polieren Download PDF

Info

Publication number
DE69927935T2
DE69927935T2 DE69927935T DE69927935T DE69927935T2 DE 69927935 T2 DE69927935 T2 DE 69927935T2 DE 69927935 T DE69927935 T DE 69927935T DE 69927935 T DE69927935 T DE 69927935T DE 69927935 T2 DE69927935 T2 DE 69927935T2
Authority
DE
Germany
Prior art keywords
substrate
polishing
polishing pad
pad
movement
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69927935T
Other languages
German (de)
English (en)
Other versions
DE69927935D1 (de
Inventor
Kyu-Hong Yusong-gu LEE
Yong-Byouk Songpa-gu LEE
Sang-Won Yusong-gu KANG
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
K C Tech Co Ltd Ansong Kyonggi Kr
Original Assignee
Doosan DND Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Doosan DND Co Ltd filed Critical Doosan DND Co Ltd
Application granted granted Critical
Publication of DE69927935D1 publication Critical patent/DE69927935D1/de
Publication of DE69927935T2 publication Critical patent/DE69927935T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B7/00Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/04Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/07Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
    • B24B37/10Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
    • B24B37/105Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping the workpieces or work carriers being actively moved by a drive, e.g. in a combined rotary and translatory movement
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/16Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation taking regard of the load
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625With simultaneous mechanical treatment, e.g. mechanico-chemical polishing

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Weting (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
DE69927935T 1998-07-31 1999-07-31 Verfahren und einrichtung zum chemisch-mechanischem polieren Expired - Fee Related DE69927935T2 (de)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
KR19980030981 1998-07-31
KR9830981 1998-07-31
KR10-1999-0030803A KR100443330B1 (ko) 1998-07-31 1999-07-28 화학 기계적 연마 방법 및 장치
KR9930803 1999-07-28
PCT/KR1999/000419 WO2000007230A1 (en) 1998-07-31 1999-07-31 Method and apparatus for chemical mechanical polishing

Publications (2)

Publication Number Publication Date
DE69927935D1 DE69927935D1 (de) 2005-12-01
DE69927935T2 true DE69927935T2 (de) 2006-07-06

Family

ID=36590880

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69927935T Expired - Fee Related DE69927935T2 (de) 1998-07-31 1999-07-31 Verfahren und einrichtung zum chemisch-mechanischem polieren

Country Status (7)

Country Link
US (1) US6315641B1 (enExample)
EP (1) EP1031166B1 (enExample)
JP (1) JP2002521839A (enExample)
KR (1) KR100443330B1 (enExample)
AT (1) ATE308116T1 (enExample)
DE (1) DE69927935T2 (enExample)
WO (1) WO2000007230A1 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3663348B2 (ja) * 2000-09-26 2005-06-22 Towa株式会社 研磨装置及び研磨方法
DE10132504C1 (de) * 2001-07-05 2002-10-10 Wacker Siltronic Halbleitermat Verfahren zur beidseitigen Material abtragenden Bearbeitung von Halbleiterscheiben und seine Verwendung
JP3843933B2 (ja) * 2002-02-07 2006-11-08 ソニー株式会社 研磨パッド、研磨装置および研磨方法
KR100776564B1 (ko) * 2006-07-18 2007-11-15 두산메카텍 주식회사 화학적 기계적 연마장비의 구동장치
GB2452091B (en) * 2007-08-24 2013-01-02 Zeeko Ltd Computer controlled work tool apparatus and method
JP5234403B2 (ja) * 2008-01-18 2013-07-10 株式会社ニコン 研磨方法および研磨装置
TWI692385B (zh) * 2014-07-17 2020-05-01 美商應用材料股份有限公司 化學機械硏磨所用的方法、系統與硏磨墊
US10076817B2 (en) 2014-07-17 2018-09-18 Applied Materials, Inc. Orbital polishing with small pad
US10105812B2 (en) 2014-07-17 2018-10-23 Applied Materials, Inc. Polishing pad configuration and polishing pad support
US10207389B2 (en) 2014-07-17 2019-02-19 Applied Materials, Inc. Polishing pad configuration and chemical mechanical polishing system
US9873179B2 (en) 2016-01-20 2018-01-23 Applied Materials, Inc. Carrier for small pad for chemical mechanical polishing
WO2017165216A1 (en) 2016-03-24 2017-09-28 Applied Materials, Inc. Textured small pad for chemical mechanical polishing
EP4187123A1 (en) * 2021-11-30 2023-05-31 Rolls-Royce Deutschland Ltd & Co KG Method and system for reducing vibrations in rotating machinery

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5177908A (en) * 1990-01-22 1993-01-12 Micron Technology, Inc. Polishing pad
JP2609741B2 (ja) 1990-04-26 1997-05-14 株式会社東芝 自動製氷装置付冷蔵庫
JPH05183042A (ja) * 1991-12-28 1993-07-23 Disco Abrasive Syst Ltd ウェーハの吸着方法
US5308438A (en) * 1992-01-30 1994-05-03 International Business Machines Corporation Endpoint detection apparatus and method for chemical/mechanical polishing
US5232875A (en) * 1992-10-15 1993-08-03 Micron Technology, Inc. Method and apparatus for improving planarity of chemical-mechanical planarization operations
US5554064A (en) * 1993-08-06 1996-09-10 Intel Corporation Orbital motion chemical-mechanical polishing apparatus and method of fabrication
US5876271A (en) * 1993-08-06 1999-03-02 Intel Corporation Slurry injection and recovery method and apparatus for chemical-mechanical polishing process
US5643053A (en) * 1993-12-27 1997-07-01 Applied Materials, Inc. Chemical mechanical polishing apparatus with improved polishing control
US5643044A (en) 1994-11-01 1997-07-01 Lund; Douglas E. Automatic chemical and mechanical polishing system for semiconductor wafers
JP3637977B2 (ja) * 1995-01-19 2005-04-13 株式会社荏原製作所 ポリッシングの終点検知方法
JP3664188B2 (ja) * 1995-12-08 2005-06-22 株式会社東京精密 表面加工方法及びその装置
KR970052698A (ko) * 1995-12-29 1997-07-29 김광호 반도체 소자의 화학적 물리적 폴리슁(cmp) 방법
JPH10180622A (ja) * 1996-12-26 1998-07-07 Canon Inc 精密研磨装置及び方法

Also Published As

Publication number Publication date
ATE308116T1 (de) 2005-11-15
DE69927935D1 (de) 2005-12-01
JP2002521839A (ja) 2002-07-16
EP1031166A1 (en) 2000-08-30
KR20000012039A (ko) 2000-02-25
KR100443330B1 (ko) 2004-08-09
EP1031166B1 (en) 2005-10-26
WO2000007230A1 (en) 2000-02-10
US6315641B1 (en) 2001-11-13

Similar Documents

Publication Publication Date Title
DE4125732C2 (de) Verfahren und Gerät zum Polieren eines flachen Wafers
DE69927935T2 (de) Verfahren und einrichtung zum chemisch-mechanischem polieren
DE68911456T2 (de) Vorrichtung zum mechanischen Planpolieren.
DE4105145C2 (de) Verfahren und Vorrichtung zum Planarisieren der Oberfläche eines Dielektrikums
DE69825143T2 (de) Vorrichtung zum polieren
DE69406041T2 (de) Polierscheibe und ein Verfahren zur Polierung eines Halbleitersubstrats
DE102016114798B4 (de) Polierpad, verfahren zum herstellen eines polierpads und polierverfahren
DE69619330T2 (de) Herstellung von Halbleiterwafern
DE69503408T2 (de) Vorrichtung zum chemisch-mechanischen Polieren mit verbesserter Verteilung der Polierzusammensetzung
DE69316849T2 (de) Verfahren und Gerät zum Polieren eines Werkstückes
DE69830944T3 (de) Polierkissen mit Rillenmuster zur Verwendung in einer chemisch-mechanischen Poliervorrichtung
DE69908110T2 (de) Verfahren und vorrichtung zur schichtdickenbestimmung beim wafertransportsystem
DE69909995T2 (de) Endpunktbestimmung beim chemisch, mechanischen polieren (cmp) durch bestimmung der höhe des substrathalters
DE102005002167B4 (de) Gerilltes Polierkissen
DE69512971T2 (de) Linear Poliergerät und Wafer Planarisierungsverfahren
DE60005816T2 (de) Polierkissen mit rillenmuster zur verwendung in einer chemisch-mechanischen poliervorrichtung
DE69904313T2 (de) Chemisch-mechanisches polierverfahren mit mehreren polierkissen
DE69618437T2 (de) Verfahren und Vorrichtung zum Polieren von Werkstücken
DE10196254B4 (de) Verfahren zum Polieren von Halbleiterwafern unter Verwendung eines beidseitigen Polierers
DE10084938B4 (de) Vorrichtung und Verfahren zum Konditionieren und Überwachen von Medien, die für die chemisch-mechanische Planarisierung verwendet werden
DE69715321T2 (de) Verfahren und Vorrichtung zum Abrichten eines Poliertuches
DE60018019T2 (de) Werkstückhalter und Poliervorrichtung mit demselben
DE4317750A1 (de) Vorrichtung zum Planarisieren von Halbleiterplättchen
DE19648066A1 (de) Chemisch-mechanische Poliervorrichtung für Halbleiterwafer
DE2132174A1 (de) Verfahren und Vorrichtung zum Herstellen eines dielektrisch isolierten Halbleitergebildes

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: DOOSAN MECATEC CO.LTD., CHANGWON GYEONGSANGNAM, KR

8327 Change in the person/name/address of the patent owner

Owner name: K. C. TECH CO., LTD., ANSONG, KYONGGI, KR

8339 Ceased/non-payment of the annual fee