DE69927935T2 - Verfahren und einrichtung zum chemisch-mechanischem polieren - Google Patents
Verfahren und einrichtung zum chemisch-mechanischem polieren Download PDFInfo
- Publication number
- DE69927935T2 DE69927935T2 DE69927935T DE69927935T DE69927935T2 DE 69927935 T2 DE69927935 T2 DE 69927935T2 DE 69927935 T DE69927935 T DE 69927935T DE 69927935 T DE69927935 T DE 69927935T DE 69927935 T2 DE69927935 T2 DE 69927935T2
- Authority
- DE
- Germany
- Prior art keywords
- substrate
- polishing
- polishing pad
- pad
- movement
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 127
- 238000000034 method Methods 0.000 title claims abstract description 49
- 239000000758 substrate Substances 0.000 claims abstract description 152
- 230000033001 locomotion Effects 0.000 claims description 56
- 239000000725 suspension Substances 0.000 claims description 23
- 238000003825 pressing Methods 0.000 claims description 2
- 208000013114 circling movement Diseases 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 abstract description 8
- 239000000126 substance Substances 0.000 description 18
- 239000010410 layer Substances 0.000 description 8
- 238000007517 polishing process Methods 0.000 description 6
- 239000013598 vector Substances 0.000 description 5
- 235000012489 doughnuts Nutrition 0.000 description 4
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000001143 conditioned effect Effects 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000001174 ascending effect Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000001151 other effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
- B24B37/105—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping the workpieces or work carriers being actively moved by a drive, e.g. in a combined rotary and translatory movement
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/16—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation taking regard of the load
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Weting (AREA)
- Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR19980030981 | 1998-07-31 | ||
| KR9830981 | 1998-07-31 | ||
| KR10-1999-0030803A KR100443330B1 (ko) | 1998-07-31 | 1999-07-28 | 화학 기계적 연마 방법 및 장치 |
| KR9930803 | 1999-07-28 | ||
| PCT/KR1999/000419 WO2000007230A1 (en) | 1998-07-31 | 1999-07-31 | Method and apparatus for chemical mechanical polishing |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE69927935D1 DE69927935D1 (de) | 2005-12-01 |
| DE69927935T2 true DE69927935T2 (de) | 2006-07-06 |
Family
ID=36590880
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE69927935T Expired - Fee Related DE69927935T2 (de) | 1998-07-31 | 1999-07-31 | Verfahren und einrichtung zum chemisch-mechanischem polieren |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US6315641B1 (enExample) |
| EP (1) | EP1031166B1 (enExample) |
| JP (1) | JP2002521839A (enExample) |
| KR (1) | KR100443330B1 (enExample) |
| AT (1) | ATE308116T1 (enExample) |
| DE (1) | DE69927935T2 (enExample) |
| WO (1) | WO2000007230A1 (enExample) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3663348B2 (ja) * | 2000-09-26 | 2005-06-22 | Towa株式会社 | 研磨装置及び研磨方法 |
| DE10132504C1 (de) * | 2001-07-05 | 2002-10-10 | Wacker Siltronic Halbleitermat | Verfahren zur beidseitigen Material abtragenden Bearbeitung von Halbleiterscheiben und seine Verwendung |
| JP3843933B2 (ja) * | 2002-02-07 | 2006-11-08 | ソニー株式会社 | 研磨パッド、研磨装置および研磨方法 |
| KR100776564B1 (ko) * | 2006-07-18 | 2007-11-15 | 두산메카텍 주식회사 | 화학적 기계적 연마장비의 구동장치 |
| GB2452091B (en) * | 2007-08-24 | 2013-01-02 | Zeeko Ltd | Computer controlled work tool apparatus and method |
| JP5234403B2 (ja) * | 2008-01-18 | 2013-07-10 | 株式会社ニコン | 研磨方法および研磨装置 |
| TWI692385B (zh) * | 2014-07-17 | 2020-05-01 | 美商應用材料股份有限公司 | 化學機械硏磨所用的方法、系統與硏磨墊 |
| US10076817B2 (en) | 2014-07-17 | 2018-09-18 | Applied Materials, Inc. | Orbital polishing with small pad |
| US10105812B2 (en) | 2014-07-17 | 2018-10-23 | Applied Materials, Inc. | Polishing pad configuration and polishing pad support |
| US10207389B2 (en) | 2014-07-17 | 2019-02-19 | Applied Materials, Inc. | Polishing pad configuration and chemical mechanical polishing system |
| US9873179B2 (en) | 2016-01-20 | 2018-01-23 | Applied Materials, Inc. | Carrier for small pad for chemical mechanical polishing |
| WO2017165216A1 (en) | 2016-03-24 | 2017-09-28 | Applied Materials, Inc. | Textured small pad for chemical mechanical polishing |
| EP4187123A1 (en) * | 2021-11-30 | 2023-05-31 | Rolls-Royce Deutschland Ltd & Co KG | Method and system for reducing vibrations in rotating machinery |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5177908A (en) * | 1990-01-22 | 1993-01-12 | Micron Technology, Inc. | Polishing pad |
| JP2609741B2 (ja) | 1990-04-26 | 1997-05-14 | 株式会社東芝 | 自動製氷装置付冷蔵庫 |
| JPH05183042A (ja) * | 1991-12-28 | 1993-07-23 | Disco Abrasive Syst Ltd | ウェーハの吸着方法 |
| US5308438A (en) * | 1992-01-30 | 1994-05-03 | International Business Machines Corporation | Endpoint detection apparatus and method for chemical/mechanical polishing |
| US5232875A (en) * | 1992-10-15 | 1993-08-03 | Micron Technology, Inc. | Method and apparatus for improving planarity of chemical-mechanical planarization operations |
| US5554064A (en) * | 1993-08-06 | 1996-09-10 | Intel Corporation | Orbital motion chemical-mechanical polishing apparatus and method of fabrication |
| US5876271A (en) * | 1993-08-06 | 1999-03-02 | Intel Corporation | Slurry injection and recovery method and apparatus for chemical-mechanical polishing process |
| US5643053A (en) * | 1993-12-27 | 1997-07-01 | Applied Materials, Inc. | Chemical mechanical polishing apparatus with improved polishing control |
| US5643044A (en) | 1994-11-01 | 1997-07-01 | Lund; Douglas E. | Automatic chemical and mechanical polishing system for semiconductor wafers |
| JP3637977B2 (ja) * | 1995-01-19 | 2005-04-13 | 株式会社荏原製作所 | ポリッシングの終点検知方法 |
| JP3664188B2 (ja) * | 1995-12-08 | 2005-06-22 | 株式会社東京精密 | 表面加工方法及びその装置 |
| KR970052698A (ko) * | 1995-12-29 | 1997-07-29 | 김광호 | 반도체 소자의 화학적 물리적 폴리슁(cmp) 방법 |
| JPH10180622A (ja) * | 1996-12-26 | 1998-07-07 | Canon Inc | 精密研磨装置及び方法 |
-
1999
- 1999-07-28 KR KR10-1999-0030803A patent/KR100443330B1/ko not_active Expired - Fee Related
- 1999-07-31 EP EP99935149A patent/EP1031166B1/en not_active Expired - Lifetime
- 1999-07-31 JP JP2000562942A patent/JP2002521839A/ja not_active Ceased
- 1999-07-31 AT AT99935149T patent/ATE308116T1/de not_active IP Right Cessation
- 1999-07-31 WO PCT/KR1999/000419 patent/WO2000007230A1/en not_active Ceased
- 1999-07-31 US US09/509,334 patent/US6315641B1/en not_active Expired - Lifetime
- 1999-07-31 DE DE69927935T patent/DE69927935T2/de not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| ATE308116T1 (de) | 2005-11-15 |
| DE69927935D1 (de) | 2005-12-01 |
| JP2002521839A (ja) | 2002-07-16 |
| EP1031166A1 (en) | 2000-08-30 |
| KR20000012039A (ko) | 2000-02-25 |
| KR100443330B1 (ko) | 2004-08-09 |
| EP1031166B1 (en) | 2005-10-26 |
| WO2000007230A1 (en) | 2000-02-10 |
| US6315641B1 (en) | 2001-11-13 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition | ||
| 8327 | Change in the person/name/address of the patent owner |
Owner name: DOOSAN MECATEC CO.LTD., CHANGWON GYEONGSANGNAM, KR |
|
| 8327 | Change in the person/name/address of the patent owner |
Owner name: K. C. TECH CO., LTD., ANSONG, KYONGGI, KR |
|
| 8339 | Ceased/non-payment of the annual fee |