KR100443330B1 - 화학 기계적 연마 방법 및 장치 - Google Patents

화학 기계적 연마 방법 및 장치 Download PDF

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Publication number
KR100443330B1
KR100443330B1 KR10-1999-0030803A KR19990030803A KR100443330B1 KR 100443330 B1 KR100443330 B1 KR 100443330B1 KR 19990030803 A KR19990030803 A KR 19990030803A KR 100443330 B1 KR100443330 B1 KR 100443330B1
Authority
KR
South Korea
Prior art keywords
polishing
wafer
polishing cloth
cloth
motion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR10-1999-0030803A
Other languages
English (en)
Korean (ko)
Other versions
KR20000012039A (ko
Inventor
이규홍
이용벽
강상원
Original Assignee
쎄미콘테크 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to KR10-1999-0030803A priority Critical patent/KR100443330B1/ko
Application filed by 쎄미콘테크 주식회사 filed Critical 쎄미콘테크 주식회사
Priority to PCT/KR1999/000419 priority patent/WO2000007230A1/en
Priority to AT99935149T priority patent/ATE308116T1/de
Priority to JP2000562942A priority patent/JP2002521839A/ja
Priority to US09/509,334 priority patent/US6315641B1/en
Priority to DE69927935T priority patent/DE69927935T2/de
Priority to EP99935149A priority patent/EP1031166B1/en
Publication of KR20000012039A publication Critical patent/KR20000012039A/ko
Application granted granted Critical
Publication of KR100443330B1 publication Critical patent/KR100443330B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
    • B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
    • B24B37/105—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping the workpieces or work carriers being actively moved by a drive, e.g. in a combined rotary and translatory movement
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/16—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation taking regard of the load
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Weting (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
KR10-1999-0030803A 1998-07-31 1999-07-28 화학 기계적 연마 방법 및 장치 Expired - Fee Related KR100443330B1 (ko)

Priority Applications (7)

Application Number Priority Date Filing Date Title
KR10-1999-0030803A KR100443330B1 (ko) 1998-07-31 1999-07-28 화학 기계적 연마 방법 및 장치
AT99935149T ATE308116T1 (de) 1998-07-31 1999-07-31 Verfahren und einrichtung zum chemisch- mechanischem polieren
JP2000562942A JP2002521839A (ja) 1998-07-31 1999-07-31 化学機械的研磨方法及び装置
US09/509,334 US6315641B1 (en) 1998-07-31 1999-07-31 Method and apparatus for chemical mechanical polishing
PCT/KR1999/000419 WO2000007230A1 (en) 1998-07-31 1999-07-31 Method and apparatus for chemical mechanical polishing
DE69927935T DE69927935T2 (de) 1998-07-31 1999-07-31 Verfahren und einrichtung zum chemisch-mechanischem polieren
EP99935149A EP1031166B1 (en) 1998-07-31 1999-07-31 Method and apparatus for chemical mechanical polishing

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR1019980030981 1998-07-31
KR19980030981 1998-07-31
KR10-1999-0030803A KR100443330B1 (ko) 1998-07-31 1999-07-28 화학 기계적 연마 방법 및 장치

Publications (2)

Publication Number Publication Date
KR20000012039A KR20000012039A (ko) 2000-02-25
KR100443330B1 true KR100443330B1 (ko) 2004-08-09

Family

ID=36590880

Family Applications (1)

Application Number Title Priority Date Filing Date
KR10-1999-0030803A Expired - Fee Related KR100443330B1 (ko) 1998-07-31 1999-07-28 화학 기계적 연마 방법 및 장치

Country Status (7)

Country Link
US (1) US6315641B1 (enExample)
EP (1) EP1031166B1 (enExample)
JP (1) JP2002521839A (enExample)
KR (1) KR100443330B1 (enExample)
AT (1) ATE308116T1 (enExample)
DE (1) DE69927935T2 (enExample)
WO (1) WO2000007230A1 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3663348B2 (ja) * 2000-09-26 2005-06-22 Ｔｏｗａ株式会社 研磨装置及び研磨方法
DE10132504C1 (de) * 2001-07-05 2002-10-10 Wacker Siltronic Halbleitermat Verfahren zur beidseitigen Material abtragenden Bearbeitung von Halbleiterscheiben und seine Verwendung
JP3843933B2 (ja) * 2002-02-07 2006-11-08 ソニー株式会社 研磨パッド、研磨装置および研磨方法
KR100776564B1 (ko) * 2006-07-18 2007-11-15 두산메카텍 주식회사 화학적 기계적 연마장비의 구동장치
GB2452091B (en) * 2007-08-24 2013-01-02 Zeeko Ltd Computer controlled work tool apparatus and method
JP5234403B2 (ja) * 2008-01-18 2013-07-10 株式会社ニコン 研磨方法および研磨装置
TWI692385B (zh) * 2014-07-17 2020-05-01 美商應用材料股份有限公司 化學機械硏磨所用的方法、系統與硏磨墊
US10076817B2 (en) 2014-07-17 2018-09-18 Applied Materials, Inc. Orbital polishing with small pad
US10105812B2 (en) 2014-07-17 2018-10-23 Applied Materials, Inc. Polishing pad configuration and polishing pad support
US10207389B2 (en) 2014-07-17 2019-02-19 Applied Materials, Inc. Polishing pad configuration and chemical mechanical polishing system
US9873179B2 (en) 2016-01-20 2018-01-23 Applied Materials, Inc. Carrier for small pad for chemical mechanical polishing
WO2017165216A1 (en) 2016-03-24 2017-09-28 Applied Materials, Inc. Textured small pad for chemical mechanical polishing
EP4187123A1 (en) * 2021-11-30 2023-05-31 Rolls-Royce Deutschland Ltd & Co KG Method and system for reducing vibrations in rotating machinery

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05183042A (ja) * 1991-12-28 1993-07-23 Disco Abrasive Syst Ltd ウェーハの吸着方法
US5554064A (en) * 1993-08-06 1996-09-10 Intel Corporation Orbital motion chemical-mechanical polishing apparatus and method of fabrication
US5643053A (en) * 1993-12-27 1997-07-01 Applied Materials, Inc. Chemical mechanical polishing apparatus with improved polishing control
KR970052698A (ko) * 1995-12-29 1997-07-29 김광호 반도체 소자의 화학적 물리적 폴리슁(cmp) 방법
JPH10180622A (ja) * 1996-12-26 1998-07-07 Canon Inc 精密研磨装置及び方法
US5876271A (en) * 1993-08-06 1999-03-02 Intel Corporation Slurry injection and recovery method and apparatus for chemical-mechanical polishing process

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5177908A (en) * 1990-01-22 1993-01-12 Micron Technology, Inc. Polishing pad
JP2609741B2 (ja) 1990-04-26 1997-05-14 株式会社東芝 自動製氷装置付冷蔵庫
US5308438A (en) * 1992-01-30 1994-05-03 International Business Machines Corporation Endpoint detection apparatus and method for chemical/mechanical polishing
US5232875A (en) * 1992-10-15 1993-08-03 Micron Technology, Inc. Method and apparatus for improving planarity of chemical-mechanical planarization operations
US5643044A (en) 1994-11-01 1997-07-01 Lund; Douglas E. Automatic chemical and mechanical polishing system for semiconductor wafers
JP3637977B2 (ja) * 1995-01-19 2005-04-13 株式会社荏原製作所 ポリッシングの終点検知方法
JP3664188B2 (ja) * 1995-12-08 2005-06-22 株式会社東京精密 表面加工方法及びその装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05183042A (ja) * 1991-12-28 1993-07-23 Disco Abrasive Syst Ltd ウェーハの吸着方法
US5554064A (en) * 1993-08-06 1996-09-10 Intel Corporation Orbital motion chemical-mechanical polishing apparatus and method of fabrication
US5876271A (en) * 1993-08-06 1999-03-02 Intel Corporation Slurry injection and recovery method and apparatus for chemical-mechanical polishing process
US5643053A (en) * 1993-12-27 1997-07-01 Applied Materials, Inc. Chemical mechanical polishing apparatus with improved polishing control
KR970052698A (ko) * 1995-12-29 1997-07-29 김광호 반도체 소자의 화학적 물리적 폴리슁(cmp) 방법
JPH10180622A (ja) * 1996-12-26 1998-07-07 Canon Inc 精密研磨装置及び方法

Also Published As

Publication number Publication date
DE69927935T2 (de) 2006-07-06
ATE308116T1 (de) 2005-11-15
DE69927935D1 (de) 2005-12-01
JP2002521839A (ja) 2002-07-16
EP1031166A1 (en) 2000-08-30
KR20000012039A (ko) 2000-02-25
EP1031166B1 (en) 2005-10-26
WO2000007230A1 (en) 2000-02-10
US6315641B1 (en) 2001-11-13

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