KR20000012039A - 화학기계적연마방법및장치 - Google Patents
화학기계적연마방법및장치 Download PDFInfo
- Publication number
- KR20000012039A KR20000012039A KR1019990030803A KR19990030803A KR20000012039A KR 20000012039 A KR20000012039 A KR 20000012039A KR 1019990030803 A KR1019990030803 A KR 1019990030803A KR 19990030803 A KR19990030803 A KR 19990030803A KR 20000012039 A KR20000012039 A KR 20000012039A
- Authority
- KR
- South Korea
- Prior art keywords
- wafer
- polishing
- polishing cloth
- cloth
- platen
- Prior art date
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 161
- 238000000034 method Methods 0.000 title claims abstract description 47
- 239000000126 substance Substances 0.000 title claims abstract description 13
- 230000033001 locomotion Effects 0.000 claims description 125
- 239000004744 fabric Substances 0.000 claims description 105
- 239000007788 liquid Substances 0.000 claims description 19
- 235000012431 wafers Nutrition 0.000 description 133
- 239000010410 layer Substances 0.000 description 8
- 230000007246 mechanism Effects 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 7
- 239000005380 borophosphosilicate glass Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 235000012489 doughnuts Nutrition 0.000 description 4
- 239000011229 interlayer Substances 0.000 description 4
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- 238000005299 abrasion Methods 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 230000001143 conditioned effect Effects 0.000 description 1
- 230000003750 conditioning effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000001151 other effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
- B24B37/105—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping the workpieces or work carriers being actively moved by a drive, e.g. in a combined rotary and translatory movement
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/16—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation taking regard of the load
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
- Weting (AREA)
Abstract
Description
Claims (14)
- 연마대상 웨이퍼와 연마포를 각각 준비하는 단계와;상기 웨이퍼의 연마면을 연마포의 표면에 접촉시키는 단계와;상기 연마포와 웨이퍼를 각각 궤도 운동시키되, 상기 궤도 운동들이 연마포와 웨이퍼 사이의 상대 속도를 발생시켜 웨이퍼의 연마가 이루어지도록 하는 단계를 구비하는 화학 기계적 연마방법.
- 제1항에 있어서, 상기 궤도 운동들의 반지름이 일치하지 않는 것을 특징으로 하는 화학 기계적 연마방법.
- 제1항에 있어서, 웨이퍼의 궤도 운동 반지름과 연마포의 궤도 운동 반지름의 합이 웨이퍼의 반지름보다 큰 것을 특징으로 하는 화학 기계적 연마방법.
- 제1항에 있어서, 웨이퍼의 궤도 운동 반지름과 연마포의 궤도 운동 반지름의 합이 웨이퍼의 반지름보다 작은 것을 특징으로 하는 화학 기계적 연마방법.
- 제1항 내지 제4항 중의 어느 한 항에 있어서, 상기 웨이퍼의 연마단계 중에 상기 웨이퍼를 연마하기 위한 연마액의 적어도 일부가 상기 연마포를 통과하여 공급되는 것을 특징으로 하는 화학 기계적 연마방법.
- 제1항에 있어서, 상기 웨이퍼의 연마면을 연마포의 표면에 접촉시키는 단계 이후에 상기 웨이퍼를 상기 연마포에 일시적으로 진공흡착시키는 단계를 더 구비하는 것을 특징으로 하는 화학 기계적 연마방법.
- 제1항에 있어서, 상기 웨이퍼의 연마 단계 과정 중에, 상기 웨이퍼와 연마포의 궤도 운동들 중에 각속도가 작은 쪽을 지지하는 축에 전달되는 마찰력을 감지하여 연마종점을 판단하는 단계를 더 구비하는 것을 특징으로 하는 화학 기계적 연마방법.
- 연마포와;상기 연마포가 안착 고정된 플레이튼과;상기 연마포에 연마대상 웨이퍼를 가압 접촉시키기 위한 웨이퍼 캐리어와;상기 웨이퍼가 궤도 운동을 하도록 상기 캐리어를 궤도 운동시키는 구동수단을 구비하는 화학 기계적 연마장치.
- 제8항에 있어서, 상기 연마포가 궤도 운동을 할 수 있도록 상기 플레이튼을 궤도 운동시키는 다른 구동수단을 더 구비하는 것을 특징으로 하는 화학 기계적 연마장치.
- 제8항에 있어서, 상기 웨이퍼의 궤도운동에 따른 연마포의 궤도 운동속도를 제한하도록 마찰을 부여하는 감속수단을 더 구비하는 것을 특징으로 하는 화학 기계적 연마장치.
- 제8항에 있어서, 상기 웨이퍼를 연마하기 위한 연마액이 상기 연마포를 통과하여 공급되도록 상기 플레이튼에 연결된 연마액 공급배관을 구비하는 것을 특징으로 하는 화학 기계적 연마장치.
- 제11항에 있어서, 상기 웨이퍼를 상기 연마포에 일시 진공흡착시키기 위해 상기 공급배관에 연결된 진공흡착수단을 더 구비하는 것을 특징으로 하는 화학 기계적 연마장치.
- 제8항에 있어서, 상기 웨이퍼의 연마 단계 과정 중에, 상기 웨이퍼와 연마포의 궤도 운동들 중에 각속도가 작은 쪽을 지지하는 축에 전달되는 마찰력을 감지하는 수단을 더 구비하는 것을 특징으로 하는 화학 기계적 연마장치.
- 제13항에 있어서, 상기 마찰력 감지수단이 압전 센서인 것을 특징으로 하는 화학 기계적 연마장치.
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-1999-0030803A KR100443330B1 (ko) | 1998-07-31 | 1999-07-28 | 화학 기계적 연마 방법 및 장치 |
PCT/KR1999/000419 WO2000007230A1 (en) | 1998-07-31 | 1999-07-31 | Method and apparatus for chemical mechanical polishing |
US09/509,334 US6315641B1 (en) | 1998-07-31 | 1999-07-31 | Method and apparatus for chemical mechanical polishing |
EP99935149A EP1031166B1 (en) | 1998-07-31 | 1999-07-31 | Method and apparatus for chemical mechanical polishing |
DE69927935T DE69927935T2 (de) | 1998-07-31 | 1999-07-31 | Verfahren und einrichtung zum chemisch-mechanischem polieren |
AT99935149T ATE308116T1 (de) | 1998-07-31 | 1999-07-31 | Verfahren und einrichtung zum chemisch- mechanischem polieren |
JP2000562942A JP2002521839A (ja) | 1998-07-31 | 1999-07-31 | 化学機械的研磨方法及び装置 |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR19980030981 | 1998-07-31 | ||
KR1019980030981 | 1998-07-31 | ||
KR10-1999-0030803A KR100443330B1 (ko) | 1998-07-31 | 1999-07-28 | 화학 기계적 연마 방법 및 장치 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20000012039A true KR20000012039A (ko) | 2000-02-25 |
KR100443330B1 KR100443330B1 (ko) | 2004-08-09 |
Family
ID=36590880
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR10-1999-0030803A KR100443330B1 (ko) | 1998-07-31 | 1999-07-28 | 화학 기계적 연마 방법 및 장치 |
Country Status (7)
Country | Link |
---|---|
US (1) | US6315641B1 (ko) |
EP (1) | EP1031166B1 (ko) |
JP (1) | JP2002521839A (ko) |
KR (1) | KR100443330B1 (ko) |
AT (1) | ATE308116T1 (ko) |
DE (1) | DE69927935T2 (ko) |
WO (1) | WO2000007230A1 (ko) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3663348B2 (ja) * | 2000-09-26 | 2005-06-22 | Towa株式会社 | 研磨装置及び研磨方法 |
DE10132504C1 (de) | 2001-07-05 | 2002-10-10 | Wacker Siltronic Halbleitermat | Verfahren zur beidseitigen Material abtragenden Bearbeitung von Halbleiterscheiben und seine Verwendung |
JP3843933B2 (ja) * | 2002-02-07 | 2006-11-08 | ソニー株式会社 | 研磨パッド、研磨装置および研磨方法 |
KR100776564B1 (ko) * | 2006-07-18 | 2007-11-15 | 두산메카텍 주식회사 | 화학적 기계적 연마장비의 구동장치 |
GB2452091B (en) * | 2007-08-24 | 2013-01-02 | Zeeko Ltd | Computer controlled work tool apparatus and method |
JP5234403B2 (ja) * | 2008-01-18 | 2013-07-10 | 株式会社ニコン | 研磨方法および研磨装置 |
US10207389B2 (en) | 2014-07-17 | 2019-02-19 | Applied Materials, Inc. | Polishing pad configuration and chemical mechanical polishing system |
TWI692385B (zh) * | 2014-07-17 | 2020-05-01 | 美商應用材料股份有限公司 | 化學機械硏磨所用的方法、系統與硏磨墊 |
US10076817B2 (en) | 2014-07-17 | 2018-09-18 | Applied Materials, Inc. | Orbital polishing with small pad |
US10105812B2 (en) | 2014-07-17 | 2018-10-23 | Applied Materials, Inc. | Polishing pad configuration and polishing pad support |
US9873179B2 (en) | 2016-01-20 | 2018-01-23 | Applied Materials, Inc. | Carrier for small pad for chemical mechanical polishing |
KR102535628B1 (ko) | 2016-03-24 | 2023-05-30 | 어플라이드 머티어리얼스, 인코포레이티드 | 화학적 기계적 연마를 위한 조직화된 소형 패드 |
EP4187123A1 (en) * | 2021-11-30 | 2023-05-31 | Rolls-Royce Deutschland Ltd & Co KG | Method and system for reducing vibrations in rotating machinery |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5177908A (en) * | 1990-01-22 | 1993-01-12 | Micron Technology, Inc. | Polishing pad |
JP2609741B2 (ja) | 1990-04-26 | 1997-05-14 | 株式会社東芝 | 自動製氷装置付冷蔵庫 |
JPH05183042A (ja) * | 1991-12-28 | 1993-07-23 | Disco Abrasive Syst Ltd | ウェーハの吸着方法 |
US5308438A (en) * | 1992-01-30 | 1994-05-03 | International Business Machines Corporation | Endpoint detection apparatus and method for chemical/mechanical polishing |
US5232875A (en) * | 1992-10-15 | 1993-08-03 | Micron Technology, Inc. | Method and apparatus for improving planarity of chemical-mechanical planarization operations |
US5554064A (en) * | 1993-08-06 | 1996-09-10 | Intel Corporation | Orbital motion chemical-mechanical polishing apparatus and method of fabrication |
US5876271A (en) * | 1993-08-06 | 1999-03-02 | Intel Corporation | Slurry injection and recovery method and apparatus for chemical-mechanical polishing process |
US5643053A (en) * | 1993-12-27 | 1997-07-01 | Applied Materials, Inc. | Chemical mechanical polishing apparatus with improved polishing control |
US5643044A (en) | 1994-11-01 | 1997-07-01 | Lund; Douglas E. | Automatic chemical and mechanical polishing system for semiconductor wafers |
JP3637977B2 (ja) * | 1995-01-19 | 2005-04-13 | 株式会社荏原製作所 | ポリッシングの終点検知方法 |
JP3664188B2 (ja) * | 1995-12-08 | 2005-06-22 | 株式会社東京精密 | 表面加工方法及びその装置 |
KR970052698A (ko) * | 1995-12-29 | 1997-07-29 | 김광호 | 반도체 소자의 화학적 물리적 폴리슁(cmp) 방법 |
JPH10180622A (ja) * | 1996-12-26 | 1998-07-07 | Canon Inc | 精密研磨装置及び方法 |
-
1999
- 1999-07-28 KR KR10-1999-0030803A patent/KR100443330B1/ko active IP Right Grant
- 1999-07-31 US US09/509,334 patent/US6315641B1/en not_active Expired - Lifetime
- 1999-07-31 WO PCT/KR1999/000419 patent/WO2000007230A1/en active IP Right Grant
- 1999-07-31 JP JP2000562942A patent/JP2002521839A/ja not_active Ceased
- 1999-07-31 AT AT99935149T patent/ATE308116T1/de not_active IP Right Cessation
- 1999-07-31 EP EP99935149A patent/EP1031166B1/en not_active Expired - Lifetime
- 1999-07-31 DE DE69927935T patent/DE69927935T2/de not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP1031166B1 (en) | 2005-10-26 |
DE69927935D1 (de) | 2005-12-01 |
US6315641B1 (en) | 2001-11-13 |
DE69927935T2 (de) | 2006-07-06 |
ATE308116T1 (de) | 2005-11-15 |
WO2000007230A1 (en) | 2000-02-10 |
EP1031166A1 (en) | 2000-08-30 |
KR100443330B1 (ko) | 2004-08-09 |
JP2002521839A (ja) | 2002-07-16 |
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