DE69923890D1 - Langwelliger Halbleiterlaser mit Oberflächenplasmon-Wellenleiter - Google Patents
Langwelliger Halbleiterlaser mit Oberflächenplasmon-WellenleiterInfo
- Publication number
- DE69923890D1 DE69923890D1 DE69923890T DE69923890T DE69923890D1 DE 69923890 D1 DE69923890 D1 DE 69923890D1 DE 69923890 T DE69923890 T DE 69923890T DE 69923890 T DE69923890 T DE 69923890T DE 69923890 D1 DE69923890 D1 DE 69923890D1
- Authority
- DE
- Germany
- Prior art keywords
- long
- semiconductor laser
- surface plasmon
- plasmon waveguide
- wave semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/3401—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having no PN junction, e.g. unipolar lasers, intersubband lasers, quantum cascade lasers
- H01S5/3402—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having no PN junction, e.g. unipolar lasers, intersubband lasers, quantum cascade lasers intersubband lasers, e.g. transitions within the conduction or valence bands
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2301/00—Functional characteristics
- H01S2301/14—Semiconductor lasers with special structural design for lasing in a specific polarisation mode
- H01S2301/145—TM polarisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1046—Comprising interactions between photons and plasmons, e.g. by a corrugated surface
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biophysics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/124,295 US6301282B1 (en) | 1998-07-29 | 1998-07-29 | Long wavelength semiconductor lasers incorporating waveguides based on surface plasmons |
US124295 | 1998-07-29 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69923890D1 true DE69923890D1 (de) | 2005-04-07 |
DE69923890T2 DE69923890T2 (de) | 2005-12-29 |
Family
ID=22413999
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69923890T Expired - Lifetime DE69923890T2 (de) | 1998-07-29 | 1999-07-20 | Langwelliger Halbleiterlaser mit Oberflächenplasmon-Wellenleiter |
Country Status (4)
Country | Link |
---|---|
US (1) | US6301282B1 (de) |
EP (1) | EP0977329B1 (de) |
JP (1) | JP3545970B2 (de) |
DE (1) | DE69923890T2 (de) |
Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6534798B1 (en) * | 1999-09-08 | 2003-03-18 | California Institute Of Technology | Surface plasmon enhanced light emitting diode and method of operation for the same |
US6501783B1 (en) * | 2000-02-24 | 2002-12-31 | Lucent Technologies Inc. | Distributed feedback surface plasmon laser |
US6563852B1 (en) * | 2000-05-08 | 2003-05-13 | Lucent Technologies Inc. | Self-mode-locking quantum cascade laser |
JP4599546B2 (ja) | 2001-03-12 | 2010-12-15 | 独立行政法人科学技術振興機構 | 低次元プラズモン発光装置 |
ITTO20020274A1 (it) * | 2002-03-27 | 2003-09-29 | Infm Istituto Nazionela Per La | Laser thz a semiconduttore incorporante guida d'onda a confinamento plasmonico controllato. |
US6829269B2 (en) | 2002-05-21 | 2004-12-07 | University Of Massachusetts | Systems and methods using phonon mediated intersubband laser |
FR2845208A1 (fr) * | 2002-10-01 | 2004-04-02 | Thales Sa | Composants optoelectroniques a guidage de l'onde optique par ruban metallique |
US7092421B2 (en) * | 2003-08-30 | 2006-08-15 | Lucent Technologies Inc. | Unipolar, intraband optoelectronic transducers with micro-cavity resonators |
JP4130163B2 (ja) * | 2003-09-29 | 2008-08-06 | 三洋電機株式会社 | 半導体発光素子 |
US7170142B2 (en) * | 2003-10-03 | 2007-01-30 | Applied Materials, Inc. | Planar integrated circuit including a plasmon waveguide-fed Schottky barrier detector and transistors connected therewith |
US7558307B2 (en) * | 2004-02-16 | 2009-07-07 | Sharp Kabushiki Kaisha | Semiconductor laser device, semiconductor laser device manufacturing method, optical disk apparatus and optical transmission system |
JP4857027B2 (ja) * | 2006-05-31 | 2012-01-18 | キヤノン株式会社 | レーザ素子 |
JP4873746B2 (ja) * | 2006-12-21 | 2012-02-08 | キヤノン株式会社 | 発振素子 |
JP4871816B2 (ja) * | 2007-08-31 | 2012-02-08 | キヤノン株式会社 | レーザ素子 |
US8373153B2 (en) * | 2009-05-26 | 2013-02-12 | University Of Seoul Industry Cooperation Foundation | Photodetectors |
US8809834B2 (en) | 2009-07-06 | 2014-08-19 | University Of Seoul Industry Cooperation Foundation | Photodetector capable of detecting long wavelength radiation |
US8929417B2 (en) | 2009-12-21 | 2015-01-06 | The Board Of Regents Of The University Of Oklahoma | Semiconductor interband lasers and method of forming |
WO2012015990A2 (en) | 2010-07-27 | 2012-02-02 | The Regents Of The University Of California | Plasmon lasers at deep subwavelength scale |
JP5740125B2 (ja) * | 2010-09-29 | 2015-06-24 | 株式会社東芝 | 半導体発光素子 |
US8805147B2 (en) * | 2011-05-17 | 2014-08-12 | Canon Kabushiki Kaisha | Waveguide, apparatus including the waveguide, and method of manufacturing the waveguide |
US9088126B2 (en) | 2013-10-17 | 2015-07-21 | The Trustees Of Princeton University | Single-mode quantum cascade lasers with enhanced tuning range |
US9337617B2 (en) | 2014-02-24 | 2016-05-10 | The Board Of Regents Of The University Of Oklahoma | Tunable semiconductor lasers |
JP2015222811A (ja) * | 2014-05-01 | 2015-12-10 | 住友電気工業株式会社 | 量子カスケード半導体レーザ、量子カスケード半導体レーザを作製する方法 |
US9728671B2 (en) | 2014-11-14 | 2017-08-08 | International Business Machines Corporation | Monolithic nano-cavity light source on lattice mismatched semiconductor substrate |
US11067749B2 (en) * | 2019-11-21 | 2021-07-20 | Globalfoundries U.S. Inc. | Waveguides with cladding layers of gradated refractive index |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52109884A (en) * | 1976-03-11 | 1977-09-14 | Nec Corp | Stripe type hetero junction semoonductor laser |
US4765705A (en) * | 1983-03-11 | 1988-08-23 | Gte Laboratories Incorporated | Grating surface plasmon coupler |
US4482779A (en) * | 1983-04-19 | 1984-11-13 | The United States Of America As Represented By The Administrator Of National Aeronautics And Space Administration | Inelastic tunnel diodes |
US4877301A (en) * | 1987-10-09 | 1989-10-31 | Ricoh Company, Ltd. | Covered optical waveguide having an inlet opening |
JP2563379B2 (ja) * | 1987-10-09 | 1996-12-11 | 株式会社リコー | 光ピックアップ |
DE59303906D1 (de) * | 1992-12-03 | 1996-10-24 | Siemens Ag | Abstimmbare oberflächenemittierende laserdiode |
US5509025A (en) | 1994-04-04 | 1996-04-16 | At&T Corp. | Unipolar semiconductor laser |
US5457709A (en) | 1994-04-04 | 1995-10-10 | At&T Ipm Corp. | Unipolar semiconductor laser |
US5502787A (en) | 1995-05-22 | 1996-03-26 | At&T Corp. | Article comprising a semiconductor waveguide structure |
-
1998
- 1998-07-29 US US09/124,295 patent/US6301282B1/en not_active Expired - Lifetime
-
1999
- 1999-07-20 EP EP99305717A patent/EP0977329B1/de not_active Expired - Lifetime
- 1999-07-20 DE DE69923890T patent/DE69923890T2/de not_active Expired - Lifetime
- 1999-07-27 JP JP21262699A patent/JP3545970B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP3545970B2 (ja) | 2004-07-21 |
EP0977329A2 (de) | 2000-02-02 |
EP0977329A3 (de) | 2001-12-05 |
DE69923890T2 (de) | 2005-12-29 |
US6301282B1 (en) | 2001-10-09 |
JP2000138420A (ja) | 2000-05-16 |
EP0977329B1 (de) | 2005-03-02 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |