US6563852B1 - Self-mode-locking quantum cascade laser - Google Patents
Self-mode-locking quantum cascade laser Download PDFInfo
- Publication number
- US6563852B1 US6563852B1 US09/566,348 US56634800A US6563852B1 US 6563852 B1 US6563852 B1 US 6563852B1 US 56634800 A US56634800 A US 56634800A US 6563852 B1 US6563852 B1 US 6563852B1
- Authority
- US
- United States
- Prior art keywords
- laser
- quantum cascade
- cascade laser
- mode
- layers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/3401—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having no PN junction, e.g. unipolar lasers, intersubband lasers, quantum cascade lasers
- H01S5/3402—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having no PN junction, e.g. unipolar lasers, intersubband lasers, quantum cascade lasers intersubband lasers, e.g. transitions within the conduction or valence bands
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
- H01S5/0657—Mode locking, i.e. generation of pulses at a frequency corresponding to a roundtrip in the cavity
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
- H01S5/2214—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on oxides or nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
- H01S5/2214—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on oxides or nitrides
- H01S5/2216—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on oxides or nitrides nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
- H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Nanotechnology (AREA)
- Chemical & Material Sciences (AREA)
- Biophysics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Semiconductor Lasers (AREA)
- Lasers (AREA)
Abstract
Description
Claims (17)
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/566,348 US6563852B1 (en) | 2000-05-08 | 2000-05-08 | Self-mode-locking quantum cascade laser |
CA002342080A CA2342080C (en) | 2000-05-08 | 2001-03-27 | Self-mode-locking quantum cascade laser |
CNB011174412A CN1326300C (en) | 2000-05-08 | 2001-04-28 | Automatic mode-locking quantum cascade laser |
EP01303946A EP1154532B1 (en) | 2000-05-08 | 2001-04-30 | Self-mode-locking quantum cascade laser |
DE60114286T DE60114286T2 (en) | 2000-05-08 | 2001-04-30 | Self-mode-coupled quantum cascade laser |
JP2001136193A JP3785057B2 (en) | 2000-05-08 | 2001-05-07 | Quantum cascade laser |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/566,348 US6563852B1 (en) | 2000-05-08 | 2000-05-08 | Self-mode-locking quantum cascade laser |
Publications (1)
Publication Number | Publication Date |
---|---|
US6563852B1 true US6563852B1 (en) | 2003-05-13 |
Family
ID=24262501
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US09/566,348 Expired - Lifetime US6563852B1 (en) | 2000-05-08 | 2000-05-08 | Self-mode-locking quantum cascade laser |
Country Status (6)
Country | Link |
---|---|
US (1) | US6563852B1 (en) |
EP (1) | EP1154532B1 (en) |
JP (1) | JP3785057B2 (en) |
CN (1) | CN1326300C (en) |
CA (1) | CA2342080C (en) |
DE (1) | DE60114286T2 (en) |
Cited By (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020041613A1 (en) * | 2000-10-02 | 2002-04-11 | Junji Yoshida | Semiconductor laser device and opticlal fiber amplifier using the same |
US20020097471A1 (en) * | 2001-01-22 | 2002-07-25 | Bethea Clyde George | Data transmission via direct modulation of a mid-IR laser |
US20030007532A1 (en) * | 2001-07-04 | 2003-01-09 | Fuji Photo Film Co., Ltd. | Semiconductor laser device in which near-edge portion of upper cladding layer is insulated for preventing current injection |
US20030206691A1 (en) * | 1996-05-06 | 2003-11-06 | Puzey Kenneth A. | High speed data link and transmitter in the mid-infrared wavelength range |
US20050276298A1 (en) * | 2004-06-10 | 2005-12-15 | Fischer Marc O | Tuneable unipolar lasers |
US20060113298A1 (en) * | 2002-11-27 | 2006-06-01 | Zaidan Hojin Handotai Kenkyu Shinkokai | Electromagnetic wave applicator |
US20080157437A1 (en) * | 2006-12-28 | 2008-07-03 | Nelson Spencer G | Heating apparatus for a composite laminator and method |
WO2010062752A1 (en) * | 2008-11-03 | 2010-06-03 | Bruker Optics, Inc. | Spectrometers utilizing mid infrared ultra broadband high brightness light sources |
US20100177798A1 (en) * | 2009-01-13 | 2010-07-15 | Curtis Robert Menyuk | Passively mode locked quantum cascade lasers |
CN101916965A (en) * | 2010-07-14 | 2010-12-15 | 中国科学院半导体研究所 | Short-wavelength grating surface emission quantum cascade laser structure and preparation method thereof |
US9088126B2 (en) | 2013-10-17 | 2015-07-21 | The Trustees Of Princeton University | Single-mode quantum cascade lasers with enhanced tuning range |
US20150207298A1 (en) * | 2014-01-17 | 2015-07-23 | Sumitomo Electric Industries, Ltd. | Method for producing semiconductor optical device |
US20170279244A1 (en) * | 2014-09-29 | 2017-09-28 | Mitsubishi Heavy Industries, Ltd. | Laser oscillation cooling device |
US10084282B1 (en) | 2017-08-14 | 2018-09-25 | The United States Of America As Represented By The Secretary Of The Air Force | Fundamental mode operation in broad area quantum cascade lasers |
US20180287347A1 (en) * | 2017-03-30 | 2018-10-04 | Sumitomo Electric Industries, Ltd. | Optical semiconductor device |
US11031753B1 (en) * | 2017-11-13 | 2021-06-08 | The Government Of The United States Of America As Represented By The Secretary Of The Air Force | Extracting the fundamental mode in broad area quantum cascade lasers |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2833419B1 (en) * | 2001-12-07 | 2006-09-01 | Thales Sa | UNIPOLAR CASCADE LASER QUANTUM POWER WITH CURRENT REDUCED THRESHOLD |
US7489865B2 (en) | 2002-02-01 | 2009-02-10 | Cubic Corporation | Integrated optical communication and range finding system and applications thereof |
DE10205310B4 (en) * | 2002-02-08 | 2010-04-15 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | A method for generating the effect of a broadband incoherent LED-like light source and use of such a method in a gas measuring device and in a lighting device |
GB2385462A (en) * | 2002-02-15 | 2003-08-20 | Denselight Semiconductors Pte | A semiconductor laser structure |
JP4536490B2 (en) * | 2004-11-15 | 2010-09-01 | 浜松ホトニクス株式会社 | Laser apparatus and control method thereof |
DE102005022436A1 (en) * | 2005-05-14 | 2006-11-23 | Universität Konstanz | Saturable absorber for lasers |
CN100373723C (en) * | 2005-08-31 | 2008-03-05 | 中国科学院上海微系统与信息技术研究所 | Indium phosphide quantum cascaded laser atomic layer measure denotative material quality control method |
US7362787B2 (en) | 2005-10-28 | 2008-04-22 | Lucent Technologies Inc. | Self-mode-locked semiconductor laser |
JP2008060396A (en) * | 2006-08-31 | 2008-03-13 | Hamamatsu Photonics Kk | Quantum cascade laser |
US8051597B1 (en) | 2007-06-14 | 2011-11-08 | Cubic Corporation | Scout sniper observation scope |
WO2009070821A2 (en) * | 2007-12-05 | 2009-06-11 | Technische Universität Wien | Semiconductor laser having absorption layer |
US9068798B2 (en) | 2010-07-19 | 2015-06-30 | Cubic Corporation | Integrated multifunction scope for optical combat identification and other uses |
JP5729138B2 (en) * | 2011-05-30 | 2015-06-03 | 住友電気工業株式会社 | Manufacturing method of optical semiconductor device |
CN102623872B (en) * | 2012-03-23 | 2014-07-02 | 中国科学院紫金山天文台 | Quantum cascade laser (QCL) phase-locked system using solid-state semiconductor source harmonic as reference source |
JP6379696B2 (en) | 2014-06-05 | 2018-08-29 | 住友電気工業株式会社 | Quantum cascade laser diode |
JP6485340B2 (en) | 2015-12-09 | 2019-03-20 | 住友電気工業株式会社 | Method for fabricating quantum cascade laser, quantum cascade laser |
JP2018026440A (en) | 2016-08-09 | 2018-02-15 | 住友電気工業株式会社 | Integrated quantum cascade laser, and semiconductor optical device |
CN108458995B (en) * | 2018-05-09 | 2020-07-21 | 长江师范学院 | Quantitative determination method for stimulated conversion of abundance-rigidity-degree-order-life of phonon characteristic of chemical bond |
Citations (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5457709A (en) | 1994-04-04 | 1995-10-10 | At&T Ipm Corp. | Unipolar semiconductor laser |
US5509025A (en) * | 1994-04-04 | 1996-04-16 | At&T Corp. | Unipolar semiconductor laser |
US5570386A (en) * | 1994-04-04 | 1996-10-29 | Lucent Technologies Inc. | Semiconductor laser |
US5696784A (en) * | 1996-04-19 | 1997-12-09 | Opto Power Corporation | Reduced mode laser and method of fabrication |
US5727010A (en) | 1996-03-20 | 1998-03-10 | Lucent Technologies Inc. | Article comprising an improved quantum cascade laser |
US5901168A (en) | 1997-05-07 | 1999-05-04 | Lucent Technologies Inc. | Article comprising an improved QC laser |
US5920586A (en) * | 1997-08-25 | 1999-07-06 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor laser |
US5936989A (en) | 1997-04-29 | 1999-08-10 | Lucent Technologies, Inc. | Quantum cascade laser |
US5960020A (en) * | 1997-02-20 | 1999-09-28 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor laser diode including ridge and partially disordered active layer |
US6031859A (en) | 1996-09-11 | 2000-02-29 | Nec Corporation | Mode-locked semiconductor laser |
US6055254A (en) | 1998-09-23 | 2000-04-25 | Lucent Technologies Inc. | Quantum cascade light emitter with pre-biased internal electronic potential |
US6055257A (en) | 1998-04-27 | 2000-04-25 | Lucent Technologies Inc. | Quantum cascade laser |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3234389C2 (en) * | 1982-09-16 | 1995-03-09 | Siemens Ag | Semiconductor laser diode |
JPH0254596A (en) * | 1988-08-18 | 1990-02-23 | Mitsubishi Electric Corp | Semiconductor laser |
US5079772A (en) * | 1990-12-21 | 1992-01-07 | Coherent, Inc. | Mode-locked laser using non-linear self-focusing element |
JP2746065B2 (en) * | 1993-07-29 | 1998-04-28 | 日本電気株式会社 | Method for manufacturing optical semiconductor device |
US6301282B1 (en) * | 1998-07-29 | 2001-10-09 | Lucent Technologies Inc. | Long wavelength semiconductor lasers incorporating waveguides based on surface plasmons |
-
2000
- 2000-05-08 US US09/566,348 patent/US6563852B1/en not_active Expired - Lifetime
-
2001
- 2001-03-27 CA CA002342080A patent/CA2342080C/en not_active Expired - Fee Related
- 2001-04-28 CN CNB011174412A patent/CN1326300C/en not_active Expired - Fee Related
- 2001-04-30 DE DE60114286T patent/DE60114286T2/en not_active Expired - Lifetime
- 2001-04-30 EP EP01303946A patent/EP1154532B1/en not_active Expired - Lifetime
- 2001-05-07 JP JP2001136193A patent/JP3785057B2/en not_active Expired - Fee Related
Patent Citations (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5457709A (en) | 1994-04-04 | 1995-10-10 | At&T Ipm Corp. | Unipolar semiconductor laser |
US5509025A (en) * | 1994-04-04 | 1996-04-16 | At&T Corp. | Unipolar semiconductor laser |
US5570386A (en) * | 1994-04-04 | 1996-10-29 | Lucent Technologies Inc. | Semiconductor laser |
US5727010A (en) | 1996-03-20 | 1998-03-10 | Lucent Technologies Inc. | Article comprising an improved quantum cascade laser |
US5696784A (en) * | 1996-04-19 | 1997-12-09 | Opto Power Corporation | Reduced mode laser and method of fabrication |
US6031859A (en) | 1996-09-11 | 2000-02-29 | Nec Corporation | Mode-locked semiconductor laser |
US5960020A (en) * | 1997-02-20 | 1999-09-28 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor laser diode including ridge and partially disordered active layer |
US5936989A (en) | 1997-04-29 | 1999-08-10 | Lucent Technologies, Inc. | Quantum cascade laser |
US5901168A (en) | 1997-05-07 | 1999-05-04 | Lucent Technologies Inc. | Article comprising an improved QC laser |
US5920586A (en) * | 1997-08-25 | 1999-07-06 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor laser |
US6055257A (en) | 1998-04-27 | 2000-04-25 | Lucent Technologies Inc. | Quantum cascade laser |
US6055254A (en) | 1998-09-23 | 2000-04-25 | Lucent Technologies Inc. | Quantum cascade light emitter with pre-biased internal electronic potential |
Non-Patent Citations (21)
Title |
---|
A. Neogi, H. Yoshida, T. Mozume, O Wada, "Ultrafast All-Optical Modulation of Interband-Light Pulses by Ultra-Short Intersubband Light Pulses in Semiconductor Quantum Wells" Journal of Applied Physics, vol. 85, No. 6, Mar. 15, 1999. |
C. H. Lin, T. K. Gustafson, "Optical Pulsewidth Measurement Using Self-Phase Modulation" IEEE Journal of Quantum Electronics, Apr. 1972. |
C. H. Lin, T. K. Gustafson, "Optical Pulsewidth Measurement Using Self-Phase Modulation" Physical Review Letters, vol. 65, No. 1, Jul. 2, 1990. |
Claire Gmachl, A. Michael Sergent, Alessandro Tredicucci, Federico Capasso, Albert L. Hutchinson, Deborah L. Sivco, James N. Baillargeon, S.N. George Chu, Alfred Y. Cho, "Improved CW Operation of Quantum Cascade Lasers with Epitaxial-Side Heat-Sinking" IEEE Photonics Technology Letters, vol. 11, No. 11 Nov. 1999. |
D. E. Spence, P. N. Kean, W. Sibbett, "60-Fsec Pulse Generation from a Self-Mode-Locked Ti:Sapphire Laser" Optic Letters, vol. 16, No. 1, Jan. 1991. |
E. Rosencher, A. Fiore, B. Vinter, V. Berger, Ph. Bois, J. Nagle "Quantum Engineering of Optical Engineering" Science, vol. 271, Jan. 22, 1996. |
Faist et al. "High-Power Continuous-Wave Quantum Cascade Lasers" IEEE Journal of Quantum Electronics, vol. 34, No. 2, Feb. 1998, pp. 336-343.* * |
Federico Capasso, Carlo Sirtori, Alfred Y. Cho, "Coupled Quantum Well Semiconductors with Giant Electric Field Tunable Nonlinear Optical Properties in the Infrared", IEEE Journal of Quantum Electronics, vol. 30, No. 5, May 1994. |
Federico Capasso, Claire Gmachl, Alessandro Tredicucci, Albert L. Hutchinson, Deborah L. Sivco, Alfred Y. Cho, High Performance Quantum Cascade Lasers, Optics & Photonics News, Oct. 1999. |
Francois Salin, Jeff Squier, Michelle Piche, "Mode-Locking of Ti:Al2O3 Lasers and Self-Focusing: A Gaussian Approximation" Optic Letters, vol. 16, No. 21, Nov. 1, 1991. |
G. Nykolak, P.F. Szajowski, G. Tourgee, H. Presby, "2.5 Gbit/s Free Space Optical Link Over 4.4 Km" Electronics Letters 1st. Apr., 1999, vol. 35, No. 7. |
G. Steinmeyer, D. H. Sutter, L. Gallman, N. Matuschek, U. Keller "Frontiers in Ultrashort Pulse Generation: Pushing the Limits in Linear and Nonlinear Optics" Science, vol. 286, Nov. 19, 1999. |
H. C. Liu, Jian Meng Li, M. Buchanan, Z. R. Wasilewski, "High Frequency Quantum-Well Infrared Photodetectors, Measured by Microwave-Rectification Technique" IEEE Jorunal of Quantum-Electronics, vol. 32, No. 6, Jun. 1996. |
Herman A. Haus "Theory of Mode Locking with Fast Saturable Absorber", Journal of Applied Physics, vol. 46, No. 7, Jul. 1975. |
Herman A. Haus, Theory of Mode Locking with a Slow Saturable Absorber, IEEE Jorunal of Quantum Electronics, vol. QE-11, No. 9, Sep. 1975. |
Jerome Faist, Federico Capasso, Deborah L. Sivco, Carlo Sirtori, Albert L. Hutchinson, Alfred Y. Cho, "Quantum Cascade Laser", Science, vol. 264, Apr. 22, 1994. |
L. F. Mollenauer, R. H. Solen, "The Soliton Laser" Optic Letters, vol. 9, No. 1, Jan. 1984. |
Mordechai, Segev, Ilan Gravé, Amnon Yariv, "Demonstration of the Optical Kerr Effect at 10.6 mum via Intersubband Nonlinearities in a Multi-Quantum Well Structure" Applied Physics Letters 61 (20), Nov. 16, 1992. |
Mordechai, Segev, Ilan Gravé, Amnon Yariv, "Demonstration of the Optical Kerr Effect at 10.6 μm via Intersubband Nonlinearities in a Multi-Quantum Well Structure" Applied Physics Letters 61 (20), Nov. 16, 1992. |
Roberto Paiella, Federico Capasso, Claire Gmachl, Clyde Bethea, Deborah L. Sivco, James N. Baillargeon, Albert L. Hutchinson, Alfred Cho "High-Speed Operation of Gain-Switched Midinfrared Quantum Cascade Lasers" Applied Physics Letters, vol. 75, Oct. 25, 1999, No. 17. |
Susumu Noda, Tetsuya Uemura, Takao Yamashita, Akio Sasaki, Analysis on Interband-Resonant Light Modulation by Intersubband-Resonant Light in n-Doped Quantum Wells, IEEE Journal of Quantum Electronics, vol. 28, No. 2, Feb. 1992. |
Cited By (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20030206691A1 (en) * | 1996-05-06 | 2003-11-06 | Puzey Kenneth A. | High speed data link and transmitter in the mid-infrared wavelength range |
US20020041613A1 (en) * | 2000-10-02 | 2002-04-11 | Junji Yoshida | Semiconductor laser device and opticlal fiber amplifier using the same |
US7006545B2 (en) * | 2000-10-02 | 2006-02-28 | The Furukawa Electric Co., Ltd. | Semiconductor laser device and optical fiber amplifier using the same |
US20020097471A1 (en) * | 2001-01-22 | 2002-07-25 | Bethea Clyde George | Data transmission via direct modulation of a mid-IR laser |
US20030007532A1 (en) * | 2001-07-04 | 2003-01-09 | Fuji Photo Film Co., Ltd. | Semiconductor laser device in which near-edge portion of upper cladding layer is insulated for preventing current injection |
US6901100B2 (en) * | 2001-07-04 | 2005-05-31 | Fuji Photo Film Co., Ltd. | Semiconductor laser device in which near-edge portion of upper cladding layer is insulated for preventing current injection |
US20060113298A1 (en) * | 2002-11-27 | 2006-06-01 | Zaidan Hojin Handotai Kenkyu Shinkokai | Electromagnetic wave applicator |
US7912553B2 (en) * | 2002-11-27 | 2011-03-22 | Jun-ichi Nishizawa | Electromagnetic wave applicator |
US20050276298A1 (en) * | 2004-06-10 | 2005-12-15 | Fischer Marc O | Tuneable unipolar lasers |
US7301977B2 (en) * | 2004-06-10 | 2007-11-27 | Nanoplus Gmbh | Tuneable unipolar lasers |
US20080137704A1 (en) * | 2004-06-10 | 2008-06-12 | Nanoplus Gmbh | Tuneable unipolar lasers |
US7696098B2 (en) | 2004-06-10 | 2010-04-13 | Nanoplus Gmbh | Tuneable unipolar lasers |
US20080157437A1 (en) * | 2006-12-28 | 2008-07-03 | Nelson Spencer G | Heating apparatus for a composite laminator and method |
US8388884B2 (en) * | 2006-12-28 | 2013-03-05 | The Boeing Company | Heating method for a composite laminator |
US7993124B2 (en) * | 2006-12-28 | 2011-08-09 | The Boeing Company | Heating apparatus for a composite laminator and method |
US20110240218A1 (en) * | 2006-12-28 | 2011-10-06 | The Boeing Company | Heating method for a composite laminator |
WO2010062752A1 (en) * | 2008-11-03 | 2010-06-03 | Bruker Optics, Inc. | Spectrometers utilizing mid infrared ultra broadband high brightness light sources |
US20110058176A1 (en) * | 2008-11-03 | 2011-03-10 | Bruker Optics, Inc. | Spectrometers utilizing mid infrared ultra broadband high brightness light sources |
US20100177798A1 (en) * | 2009-01-13 | 2010-07-15 | Curtis Robert Menyuk | Passively mode locked quantum cascade lasers |
US7940818B2 (en) * | 2009-01-13 | 2011-05-10 | The University Of Maryland, Baltimore County | Passively mode locked quantum cascade lasers |
CN101916965A (en) * | 2010-07-14 | 2010-12-15 | 中国科学院半导体研究所 | Short-wavelength grating surface emission quantum cascade laser structure and preparation method thereof |
US9088126B2 (en) | 2013-10-17 | 2015-07-21 | The Trustees Of Princeton University | Single-mode quantum cascade lasers with enhanced tuning range |
US20150207298A1 (en) * | 2014-01-17 | 2015-07-23 | Sumitomo Electric Industries, Ltd. | Method for producing semiconductor optical device |
US9531162B2 (en) * | 2014-01-17 | 2016-12-27 | Sumitomo Electric Industries, Ltd. | Method for producing semiconductor optical device |
US20170279244A1 (en) * | 2014-09-29 | 2017-09-28 | Mitsubishi Heavy Industries, Ltd. | Laser oscillation cooling device |
US9859674B2 (en) * | 2014-09-29 | 2018-01-02 | Mitsubishi Heavy Industries, Ltd. | Laser oscillation cooling device |
US20180287347A1 (en) * | 2017-03-30 | 2018-10-04 | Sumitomo Electric Industries, Ltd. | Optical semiconductor device |
US10084282B1 (en) | 2017-08-14 | 2018-09-25 | The United States Of America As Represented By The Secretary Of The Air Force | Fundamental mode operation in broad area quantum cascade lasers |
US11031753B1 (en) * | 2017-11-13 | 2021-06-08 | The Government Of The United States Of America As Represented By The Secretary Of The Air Force | Extracting the fundamental mode in broad area quantum cascade lasers |
Also Published As
Publication number | Publication date |
---|---|
CA2342080C (en) | 2005-01-04 |
CA2342080A1 (en) | 2001-11-08 |
DE60114286D1 (en) | 2005-12-01 |
JP2001320136A (en) | 2001-11-16 |
CN1326300C (en) | 2007-07-11 |
JP3785057B2 (en) | 2006-06-14 |
EP1154532A2 (en) | 2001-11-14 |
DE60114286T2 (en) | 2006-07-13 |
EP1154532B1 (en) | 2005-10-26 |
CN1323083A (en) | 2001-11-21 |
EP1154532A3 (en) | 2004-01-02 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US6563852B1 (en) | Self-mode-locking quantum cascade laser | |
Capasso et al. | New frontiers in quantum cascade lasers and applications | |
Capasso et al. | Quantum cascade lasers: ultrahigh-speed operation, optical wireless communication, narrow linewidth, and far-infrared emission | |
Paiella et al. | High-frequency modulation without the relaxation oscillation resonance in quantum cascade lasers | |
Burghoff et al. | A terahertz pulse emitter monolithically integrated with a quantum cascade laser | |
Paiella et al. | Monolithic active mode locking of quantum cascade lasers | |
US7158545B2 (en) | Terahertz lasers and amplifiers based on resonant optical phonon scattering to achieve population inversion | |
US7382806B2 (en) | THz semiconductor laser incorporating a controlled plasmon confinement waveguide | |
Li et al. | Modal gain characteristics of a 2 μm InGaSb/AlGaAsSb passively mode-locked quantum well laser | |
Thompson et al. | Colliding-pulse modelocked quantum dot lasers | |
Krakowski et al. | Stabilized high pulse energy passively mode-locked monolithic and external cavity tapered lasers for space applications | |
Tourrenc et al. | Cross-correlation timing jitter measurement of high power passively mode-locked two-section quantum-dot lasers | |
Soibel et al. | Stability of pulse emission and enhancement of intracavity second-harmonic generation in self-mode-locked quantum cascade lasers | |
Kitada et al. | Room-temperature two-color lasing by current injection into a GaAs/AlGaAs coupled multilayer cavity fabricated by wafer bonding | |
Hou et al. | Photonic integrated circuits for terahertz source generation | |
Prziwarka et al. | Generation of optical picosecond pulses with monolithic colliding‐pulse mode‐locked lasers containing a chirped double‐quantum‐well active region | |
Wu et al. | RF Injection Locking of THz Metasurface Quantum‐Cascade VECSEL | |
Curwen | Development of Terahertz Quantum-cascade VECSELs | |
Latkowski | Radio frequency and terahertz signals generated by passively mode-locked semiconductor lasers | |
Micheletti et al. | THz optical solitons from dispersion-compensated antenna-coupled planarized ring quantum cascade lasers | |
Tandoi | Monolithic high power mode locked GaAs/AlGaAs quantum well lasers | |
JAIDL et al. | Towards Broadband Terahertz Quantum Cascade Ring Laser Frequency Combs | |
Merghem et al. | Coherence collapse in monolithic quantum-dash-based passive mode-locked lasers | |
Silverman et al. | Exotic behavior in quantum dot mode-locked lasers: dark pulses and bistability | |
Sadeev et al. | Non-linear and dynamic properties of MOVPE-grown InAs/InP quantum-dot and quantum-dash Fabry-Perot lasers |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AS | Assignment |
Owner name: LUCENT TECHNOLOGIES, INC., NEW JERSEY Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:BAILLARGEON, JAMES NELSON;CAPASSO, FEDERICO;PAIELLA, ROBERTO;AND OTHERS;REEL/FRAME:011331/0592;SIGNING DATES FROM 20000906 TO 20001108 |
|
STCF | Information on status: patent grant |
Free format text: PATENTED CASE |
|
FPAY | Fee payment |
Year of fee payment: 4 |
|
FEPP | Fee payment procedure |
Free format text: PAYOR NUMBER ASSIGNED (ORIGINAL EVENT CODE: ASPN); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY |
|
FPAY | Fee payment |
Year of fee payment: 8 |
|
AS | Assignment |
Owner name: CREDIT SUISSE AG, NEW YORK Free format text: SECURITY INTEREST;ASSIGNOR:ALCATEL-LUCENT USA INC.;REEL/FRAME:030510/0627 Effective date: 20130130 |
|
AS | Assignment |
Owner name: ALCATEL-LUCENT USA INC., NEW JERSEY Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:CREDIT SUISSE AG;REEL/FRAME:033949/0531 Effective date: 20140819 |
|
FPAY | Fee payment |
Year of fee payment: 12 |
|
AS | Assignment |
Owner name: PROVENANCE ASSET GROUP LLC, CONNECTICUT Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:NOKIA TECHNOLOGIES OY;NOKIA SOLUTIONS AND NETWORKS BV;ALCATEL LUCENT SAS;REEL/FRAME:043877/0001 Effective date: 20170912 Owner name: NOKIA USA INC., CALIFORNIA Free format text: SECURITY INTEREST;ASSIGNORS:PROVENANCE ASSET GROUP HOLDINGS, LLC;PROVENANCE ASSET GROUP LLC;REEL/FRAME:043879/0001 Effective date: 20170913 Owner name: CORTLAND CAPITAL MARKET SERVICES, LLC, ILLINOIS Free format text: SECURITY INTEREST;ASSIGNORS:PROVENANCE ASSET GROUP HOLDINGS, LLC;PROVENANCE ASSET GROUP, LLC;REEL/FRAME:043967/0001 Effective date: 20170913 |
|
AS | Assignment |
Owner name: ALCATEL-LUCENT USA INC., NEW JERSEY Free format text: CHANGE OF NAME;ASSIGNOR:LUCENT TECHNOLOGIES INC.;REEL/FRAME:049887/0613 Effective date: 20081101 |
|
AS | Assignment |
Owner name: NOKIA US HOLDINGS INC., NEW JERSEY Free format text: ASSIGNMENT AND ASSUMPTION AGREEMENT;ASSIGNOR:NOKIA USA INC.;REEL/FRAME:048370/0682 Effective date: 20181220 |
|
AS | Assignment |
Owner name: PROVENANCE ASSET GROUP LLC, CONNECTICUT Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:CORTLAND CAPITAL MARKETS SERVICES LLC;REEL/FRAME:058983/0104 Effective date: 20211101 Owner name: PROVENANCE ASSET GROUP HOLDINGS LLC, CONNECTICUT Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:CORTLAND CAPITAL MARKETS SERVICES LLC;REEL/FRAME:058983/0104 Effective date: 20211101 Owner name: PROVENANCE ASSET GROUP LLC, CONNECTICUT Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:NOKIA US HOLDINGS INC.;REEL/FRAME:058363/0723 Effective date: 20211129 Owner name: PROVENANCE ASSET GROUP HOLDINGS LLC, CONNECTICUT Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:NOKIA US HOLDINGS INC.;REEL/FRAME:058363/0723 Effective date: 20211129 |
|
AS | Assignment |
Owner name: RPX CORPORATION, CALIFORNIA Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:PROVENANCE ASSET GROUP LLC;REEL/FRAME:059352/0001 Effective date: 20211129 |