DE69911012T2 - Flacher elektronenemitter - Google Patents

Flacher elektronenemitter Download PDF

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Publication number
DE69911012T2
DE69911012T2 DE69911012T DE69911012T DE69911012T2 DE 69911012 T2 DE69911012 T2 DE 69911012T2 DE 69911012 T DE69911012 T DE 69911012T DE 69911012 T DE69911012 T DE 69911012T DE 69911012 T2 DE69911012 T2 DE 69911012T2
Authority
DE
Germany
Prior art keywords
electron
electrons
material layer
layer
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69911012T
Other languages
German (de)
English (en)
Other versions
DE69911012D1 (de
Inventor
Petr Viscor
Niels Ole Nielsen
Armin Delong
Vladimir Kolarik
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of DE69911012D1 publication Critical patent/DE69911012D1/de
Application granted granted Critical
Publication of DE69911012T2 publication Critical patent/DE69911012T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/312—Cold cathodes, e.g. field-emissive cathode having an electric field perpendicular to the surface, e.g. tunnel-effect cathodes of metal-insulator-metal [MIM] type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J35/00—X-ray tubes
    • H01J35/02—Details
    • H01J35/04—Electrodes ; Mutual position thereof; Constructional adaptations therefor
    • H01J35/06—Cathodes
    • H01J35/065—Field emission, photo emission or secondary emission cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2235/00—X-ray tubes
    • H01J2235/06—Cathode assembly
    • H01J2235/062—Cold cathodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Cold Cathode And The Manufacture (AREA)
  • Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Bipolar Transistors (AREA)
  • Electrodes For Cathode-Ray Tubes (AREA)
  • Discharge Lamps And Accessories Thereof (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Electrodes Of Semiconductors (AREA)
DE69911012T 1998-06-11 1999-06-11 Flacher elektronenemitter Expired - Fee Related DE69911012T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US8897898P 1998-06-11 1998-06-11
US88978P 1998-06-11
PCT/DK1999/000323 WO1999065050A1 (en) 1998-06-11 1999-06-11 Planar electron emitter (pee)

Publications (2)

Publication Number Publication Date
DE69911012D1 DE69911012D1 (de) 2003-10-09
DE69911012T2 true DE69911012T2 (de) 2004-06-17

Family

ID=22214628

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69911012T Expired - Fee Related DE69911012T2 (de) 1998-06-11 1999-06-11 Flacher elektronenemitter

Country Status (18)

Country Link
US (1) US7399987B1 (enExample)
EP (1) EP1086480B1 (enExample)
JP (1) JP2002518788A (enExample)
KR (1) KR20010083046A (enExample)
CN (1) CN1202545C (enExample)
AT (1) ATE249094T1 (enExample)
AU (1) AU755927B2 (enExample)
BR (1) BR9912185A (enExample)
CA (1) CA2332556A1 (enExample)
CZ (1) CZ20004455A3 (enExample)
DE (1) DE69911012T2 (enExample)
HU (1) HUP0103631A3 (enExample)
IL (1) IL139693A0 (enExample)
RU (1) RU2224327C2 (enExample)
SK (1) SK18512000A3 (enExample)
UA (1) UA64802C2 (enExample)
WO (1) WO1999065050A1 (enExample)
ZA (1) ZA200006692B (enExample)

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TW497278B (en) * 2000-03-24 2002-08-01 Japan Science & Tech Corp Method for generating trajectory electron, trajectory electron solid state semiconductor element
US7129626B2 (en) * 2001-03-20 2006-10-31 Copytele, Inc. Pixel structure for an edge-emitter field-emission display
US6643248B2 (en) * 2001-04-16 2003-11-04 Hewlett-Packard Development Company, L.P. Data storage device
US6891176B2 (en) 2003-06-20 2005-05-10 Nanion Aps Planar electron emitter with extended lifetime and system using same
US6872964B2 (en) 2003-08-20 2005-03-29 Hewlett-Packard Development Company, L.P. Data storage device
EP1801842A1 (en) * 2005-12-23 2007-06-27 Nederlandse Organisatie voor toegepast-natuurwetenschappelijk Onderzoek TNO Device for generating X-rays and use of such a device
JP2007194087A (ja) * 2006-01-19 2007-08-02 Matsushita Electric Ind Co Ltd 電子放出装置およびその製造方法
KR20090012246A (ko) * 2006-05-31 2009-02-02 파나소닉 주식회사 플라스마 디스플레이 패널과 그 제조방법
JP5354598B2 (ja) * 2009-12-17 2013-11-27 独立行政法人産業技術総合研究所 電子源
US8446088B2 (en) * 2009-12-29 2013-05-21 Ocean's King Lighting Science & Technology Co., Ltd. Field emission device for emitting white light
JP6097563B2 (ja) * 2010-01-08 2017-03-15 トライ アルファ エナジー， インコーポレイテッド 高エネルギー光子から電気へのエネルギーの変換
CN102243967B (zh) * 2011-05-25 2013-05-22 西安交通大学 基于多孔介电材料薄膜的弹道场发射显示器件阴极的制备方法
US9443691B2 (en) 2013-12-30 2016-09-13 General Electric Company Electron emission surface for X-ray generation
GB2531326B (en) * 2014-10-16 2020-08-05 Adaptix Ltd An X-Ray emitter panel and a method of designing such an X-Ray emitter panel
US9525077B1 (en) * 2015-11-04 2016-12-20 Texas Instruments Incorporated Integration of a baritt diode
KR102232038B1 (ko) 2016-01-07 2021-03-26 더 리서치 파운데이션 포 더 스테이트 유니버시티 오브 뉴욕 셀레늄 포토멀티플라이어 및 이의 제조방법

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BE716262A (enExample) * 1967-07-25 1968-11-04
GB1303659A (enExample) 1969-11-12 1973-01-17
NL184589C (nl) 1979-07-13 1989-09-01 Philips Nv Halfgeleiderinrichting voor het opwekken van een elektronenbundel en werkwijze voor het vervaardigen van een dergelijke halfgeleiderinrichting.
US4683399A (en) 1981-06-29 1987-07-28 Rockwell International Corporation Silicon vacuum electron devices
GB2109160B (en) * 1981-11-06 1985-05-30 Philips Electronic Associated Semiconductor electron source for display tubes and other equipment
NL8400297A (nl) 1984-02-01 1985-09-02 Philips Nv Halfgeleiderinrichting voor het opwekken van een elektronenbundel.
NL8600675A (nl) 1986-03-17 1987-10-16 Philips Nv Halfgeleiderinrichting voor het opwekken van een elektronenstroom.
US4823004A (en) 1987-11-24 1989-04-18 California Institute Of Technology Tunnel and field effect carrier ballistics
EP0367195A3 (en) * 1988-10-31 1991-10-02 Matsushita Electric Industrial Co., Ltd. Mim cold-cathode electron emission elements and methods of manufacture thereof
EP0416558B1 (en) 1989-09-04 1996-07-31 Canon Kabushiki Kaisha Electron emission element and method of manufacturing the same
US5229682A (en) 1989-12-18 1993-07-20 Seiko Epson Corporation Field electron emission device
NL9000297A (nl) 1990-02-08 1991-09-02 Philips Nv Ladingsgekoppelde inrichting.
JPH0425175A (ja) 1990-05-21 1992-01-28 Canon Inc ダイオード
RU2020642C1 (ru) * 1990-05-29 1994-09-30 Научно-исследовательский институт "Платан" с заводом Плоский электронно-оптический преобразователь
US5212426A (en) 1991-01-24 1993-05-18 Motorola, Inc. Integrally controlled field emission flat display device
ATE155610T1 (de) 1991-02-20 1997-08-15 Canon Kk Halbleiter-elektronenemissionseinrichtung
JP3126158B2 (ja) 1991-04-10 2001-01-22 日本放送協会 薄膜冷陰極
US5536193A (en) 1991-11-07 1996-07-16 Microelectronics And Computer Technology Corporation Method of making wide band gap field emitter
US5686791A (en) 1992-03-16 1997-11-11 Microelectronics And Computer Technology Corp. Amorphic diamond film flat field emission cathode
US5463275A (en) 1992-07-10 1995-10-31 Trw Inc. Heterojunction step doped barrier cathode emitter
DE69316960T2 (de) 1992-11-12 1998-07-30 Koninkl Philips Electronics Nv Elektronenröhre mit Halbleiterkathode
DK146692D0 (da) 1992-12-07 1992-12-07 Petr Viscor Fremgangsmaade og apparat til bestemmelse af karakteristiske elektriske materialeparametre for halvledende materialer
EP0601637B1 (en) 1992-12-08 1999-10-27 Koninklijke Philips Electronics N.V. Cathode ray tube comprising a semiconductor cathode
RU2065228C1 (ru) * 1993-06-04 1996-08-10 Институт физики полупроводников СО РАН Многоэлементный ик-приемник на горячих носителях с длинноволновой границей 0,2 эв
US5340997A (en) 1993-09-20 1994-08-23 Hewlett-Packard Company Electrostatically shielded field emission microelectronic device
CH689190A5 (fr) 1993-10-19 1998-11-30 Hans Ulrich Meyer Instrument de mesure de longueurs ou d'angles.
US5528103A (en) 1994-01-31 1996-06-18 Silicon Video Corporation Field emitter with focusing ridges situated to sides of gate
US5631196A (en) 1994-07-18 1997-05-20 Motorola Method for making inversion mode diamond electron source
US5729094A (en) * 1996-04-15 1998-03-17 Massachusetts Institute Of Technology Energetic-electron emitters
US5712490A (en) 1996-11-21 1998-01-27 Itt Industries, Inc. Ramp cathode structures for vacuum emission

Also Published As

Publication number Publication date
KR20010083046A (ko) 2001-08-31
CN1202545C (zh) 2005-05-18
UA64802C2 (uk) 2004-03-15
EP1086480A1 (en) 2001-03-28
HK1034358A1 (en) 2001-10-19
EP1086480B1 (en) 2003-09-03
WO1999065050A1 (en) 1999-12-16
RU2224327C2 (ru) 2004-02-20
SK18512000A3 (sk) 2003-01-09
DE69911012D1 (de) 2003-10-09
AU4358999A (en) 1999-12-30
ZA200006692B (en) 2002-02-18
HUP0103631A3 (en) 2004-07-28
CZ20004455A3 (cs) 2002-06-12
CN1305636A (zh) 2001-07-25
IL139693A0 (en) 2002-02-10
HUP0103631A2 (hu) 2002-01-28
CA2332556A1 (en) 1999-12-16
BR9912185A (pt) 2001-04-10
JP2002518788A (ja) 2002-06-25
US7399987B1 (en) 2008-07-15
ATE249094T1 (de) 2003-09-15
AU755927B2 (en) 2003-01-02

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Legal Events

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8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee