RU2224327C2 - Планарный электронный эмиттер (пээ) - Google Patents

Планарный электронный эмиттер (пээ) Download PDF

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Publication number
RU2224327C2
RU2224327C2 RU2001101493/09A RU2001101493A RU2224327C2 RU 2224327 C2 RU2224327 C2 RU 2224327C2 RU 2001101493/09 A RU2001101493/09 A RU 2001101493/09A RU 2001101493 A RU2001101493 A RU 2001101493A RU 2224327 C2 RU2224327 C2 RU 2224327C2
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RU
Russia
Prior art keywords
layer
electrons
materials
electric charge
partially conductive
Prior art date
Application number
RU2001101493/09A
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English (en)
Russian (ru)
Other versions
RU2001101493A (ru
Inventor
Петр ВИСЦОР (DK)
Петр ВИСЦОР
Нильс Оле НИЛЬСЕН (DK)
Нильс Оле НИЛЬСЕН
Армин ДЕЛОНГ (CZ)
Армин ДЕЛОНГ
Владимир КОЛАРИК (CZ)
Владимир КОЛАРИК
Original Assignee
Петр ВИСЦОР
Нильс Оле НИЛЬСЕН
Армин ДЕЛОНГ
Владимир КОЛАРИК
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by Петр ВИСЦОР, Нильс Оле НИЛЬСЕН, Армин ДЕЛОНГ, Владимир КОЛАРИК filed Critical Петр ВИСЦОР
Publication of RU2001101493A publication Critical patent/RU2001101493A/ru
Application granted granted Critical
Publication of RU2224327C2 publication Critical patent/RU2224327C2/ru

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/312—Cold cathodes, e.g. field-emissive cathode having an electric field perpendicular to the surface, e.g. tunnel-effect cathodes of metal-insulator-metal [MIM] type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J35/00—X-ray tubes
    • H01J35/02—Details
    • H01J35/04—Electrodes ; Mutual position thereof; Constructional adaptations therefor
    • H01J35/06—Cathodes
    • H01J35/065—Field emission, photo emission or secondary emission cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2235/00—X-ray tubes
    • H01J2235/06—Cathode assembly
    • H01J2235/062—Cold cathodes

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Cold Cathode And The Manufacture (AREA)
  • Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Bipolar Transistors (AREA)
  • Electrodes For Cathode-Ray Tubes (AREA)
  • Discharge Lamps And Accessories Thereof (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Electrodes Of Semiconductors (AREA)
RU2001101493/09A 1998-06-11 1999-06-11 Планарный электронный эмиттер (пээ) RU2224327C2 (ru)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US8897898P 1998-06-11 1998-06-11
US60/088,978 1998-06-11

Publications (2)

Publication Number Publication Date
RU2001101493A RU2001101493A (ru) 2003-03-27
RU2224327C2 true RU2224327C2 (ru) 2004-02-20

Family

ID=22214628

Family Applications (1)

Application Number Title Priority Date Filing Date
RU2001101493/09A RU2224327C2 (ru) 1998-06-11 1999-06-11 Планарный электронный эмиттер (пээ)

Country Status (18)

Country Link
US (1) US7399987B1 (enExample)
EP (1) EP1086480B1 (enExample)
JP (1) JP2002518788A (enExample)
KR (1) KR20010083046A (enExample)
CN (1) CN1202545C (enExample)
AT (1) ATE249094T1 (enExample)
AU (1) AU755927B2 (enExample)
BR (1) BR9912185A (enExample)
CA (1) CA2332556A1 (enExample)
CZ (1) CZ20004455A3 (enExample)
DE (1) DE69911012T2 (enExample)
HU (1) HUP0103631A3 (enExample)
IL (1) IL139693A0 (enExample)
RU (1) RU2224327C2 (enExample)
SK (1) SK18512000A3 (enExample)
UA (1) UA64802C2 (enExample)
WO (1) WO1999065050A1 (enExample)
ZA (1) ZA200006692B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
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US8089211B2 (en) 2006-05-31 2012-01-03 Panasonic Corporation Plasma display panel and method for manufacturing the same

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TW497278B (en) * 2000-03-24 2002-08-01 Japan Science & Tech Corp Method for generating trajectory electron, trajectory electron solid state semiconductor element
US7129626B2 (en) * 2001-03-20 2006-10-31 Copytele, Inc. Pixel structure for an edge-emitter field-emission display
US6643248B2 (en) * 2001-04-16 2003-11-04 Hewlett-Packard Development Company, L.P. Data storage device
US6891176B2 (en) 2003-06-20 2005-05-10 Nanion Aps Planar electron emitter with extended lifetime and system using same
US6872964B2 (en) 2003-08-20 2005-03-29 Hewlett-Packard Development Company, L.P. Data storage device
EP1801842A1 (en) * 2005-12-23 2007-06-27 Nederlandse Organisatie voor toegepast-natuurwetenschappelijk Onderzoek TNO Device for generating X-rays and use of such a device
JP2007194087A (ja) * 2006-01-19 2007-08-02 Matsushita Electric Ind Co Ltd 電子放出装置およびその製造方法
JP5354598B2 (ja) * 2009-12-17 2013-11-27 独立行政法人産業技術総合研究所 電子源
US8446088B2 (en) * 2009-12-29 2013-05-21 Ocean's King Lighting Science & Technology Co., Ltd. Field emission device for emitting white light
JP6097563B2 (ja) * 2010-01-08 2017-03-15 トライ アルファ エナジー， インコーポレイテッド 高エネルギー光子から電気へのエネルギーの変換
CN102243967B (zh) * 2011-05-25 2013-05-22 西安交通大学 基于多孔介电材料薄膜的弹道场发射显示器件阴极的制备方法
US9443691B2 (en) 2013-12-30 2016-09-13 General Electric Company Electron emission surface for X-ray generation
GB2531326B (en) * 2014-10-16 2020-08-05 Adaptix Ltd An X-Ray emitter panel and a method of designing such an X-Ray emitter panel
US9525077B1 (en) * 2015-11-04 2016-12-20 Texas Instruments Incorporated Integration of a baritt diode
KR102232038B1 (ko) 2016-01-07 2021-03-26 더 리서치 파운데이션 포 더 스테이트 유니버시티 오브 뉴욕 셀레늄 포토멀티플라이어 및 이의 제조방법

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1223729A (en) * 1967-07-25 1971-03-03 North American Rockwell Tunnel cathode
US5280221A (en) * 1991-04-10 1994-01-18 Nippon Hoso Kyokai Thin-film cold cathode structure and device using the same
RU2020642C1 (ru) * 1990-05-29 1994-09-30 Научно-исследовательский институт "Платан" с заводом Плоский электронно-оптический преобразователь
RU2065228C1 (ru) * 1993-06-04 1996-08-10 Институт физики полупроводников СО РАН Многоэлементный ик-приемник на горячих носителях с длинноволновой границей 0,2 эв

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NL184589C (nl) 1979-07-13 1989-09-01 Philips Nv Halfgeleiderinrichting voor het opwekken van een elektronenbundel en werkwijze voor het vervaardigen van een dergelijke halfgeleiderinrichting.
US4683399A (en) 1981-06-29 1987-07-28 Rockwell International Corporation Silicon vacuum electron devices
GB2109160B (en) * 1981-11-06 1985-05-30 Philips Electronic Associated Semiconductor electron source for display tubes and other equipment
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US4823004A (en) 1987-11-24 1989-04-18 California Institute Of Technology Tunnel and field effect carrier ballistics
EP0367195A3 (en) * 1988-10-31 1991-10-02 Matsushita Electric Industrial Co., Ltd. Mim cold-cathode electron emission elements and methods of manufacture thereof
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JPH0425175A (ja) 1990-05-21 1992-01-28 Canon Inc ダイオード
US5212426A (en) 1991-01-24 1993-05-18 Motorola, Inc. Integrally controlled field emission flat display device
ATE155610T1 (de) 1991-02-20 1997-08-15 Canon Kk Halbleiter-elektronenemissionseinrichtung
US5536193A (en) 1991-11-07 1996-07-16 Microelectronics And Computer Technology Corporation Method of making wide band gap field emitter
US5686791A (en) 1992-03-16 1997-11-11 Microelectronics And Computer Technology Corp. Amorphic diamond film flat field emission cathode
US5463275A (en) 1992-07-10 1995-10-31 Trw Inc. Heterojunction step doped barrier cathode emitter
DE69316960T2 (de) 1992-11-12 1998-07-30 Koninkl Philips Electronics Nv Elektronenröhre mit Halbleiterkathode
DK146692D0 (da) 1992-12-07 1992-12-07 Petr Viscor Fremgangsmaade og apparat til bestemmelse af karakteristiske elektriske materialeparametre for halvledende materialer
EP0601637B1 (en) 1992-12-08 1999-10-27 Koninklijke Philips Electronics N.V. Cathode ray tube comprising a semiconductor cathode
US5340997A (en) 1993-09-20 1994-08-23 Hewlett-Packard Company Electrostatically shielded field emission microelectronic device
CH689190A5 (fr) 1993-10-19 1998-11-30 Hans Ulrich Meyer Instrument de mesure de longueurs ou d'angles.
US5528103A (en) 1994-01-31 1996-06-18 Silicon Video Corporation Field emitter with focusing ridges situated to sides of gate
US5631196A (en) 1994-07-18 1997-05-20 Motorola Method for making inversion mode diamond electron source
US5729094A (en) * 1996-04-15 1998-03-17 Massachusetts Institute Of Technology Energetic-electron emitters
US5712490A (en) 1996-11-21 1998-01-27 Itt Industries, Inc. Ramp cathode structures for vacuum emission

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1223729A (en) * 1967-07-25 1971-03-03 North American Rockwell Tunnel cathode
RU2020642C1 (ru) * 1990-05-29 1994-09-30 Научно-исследовательский институт "Платан" с заводом Плоский электронно-оптический преобразователь
US5280221A (en) * 1991-04-10 1994-01-18 Nippon Hoso Kyokai Thin-film cold cathode structure and device using the same
RU2065228C1 (ru) * 1993-06-04 1996-08-10 Институт физики полупроводников СО РАН Многоэлементный ик-приемник на горячих носителях с длинноволновой границей 0,2 эв

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8089211B2 (en) 2006-05-31 2012-01-03 Panasonic Corporation Plasma display panel and method for manufacturing the same
US8183775B2 (en) 2006-05-31 2012-05-22 Panasonic Corporation Plasma display panel and method for manufacturing the same

Also Published As

Publication number Publication date
KR20010083046A (ko) 2001-08-31
CN1202545C (zh) 2005-05-18
UA64802C2 (uk) 2004-03-15
EP1086480A1 (en) 2001-03-28
HK1034358A1 (en) 2001-10-19
EP1086480B1 (en) 2003-09-03
WO1999065050A1 (en) 1999-12-16
SK18512000A3 (sk) 2003-01-09
DE69911012D1 (de) 2003-10-09
AU4358999A (en) 1999-12-30
ZA200006692B (en) 2002-02-18
HUP0103631A3 (en) 2004-07-28
CZ20004455A3 (cs) 2002-06-12
CN1305636A (zh) 2001-07-25
IL139693A0 (en) 2002-02-10
HUP0103631A2 (hu) 2002-01-28
CA2332556A1 (en) 1999-12-16
BR9912185A (pt) 2001-04-10
JP2002518788A (ja) 2002-06-25
US7399987B1 (en) 2008-07-15
ATE249094T1 (de) 2003-09-15
AU755927B2 (en) 2003-01-02
DE69911012T2 (de) 2004-06-17

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MM4A The patent is invalid due to non-payment of fees

Effective date: 20050612