ZA200006692B - Planar electron emitter (PEE). - Google Patents

Planar electron emitter (PEE). Download PDF

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Publication number
ZA200006692B
ZA200006692B ZA200006692A ZA200006692A ZA200006692B ZA 200006692 B ZA200006692 B ZA 200006692B ZA 200006692 A ZA200006692 A ZA 200006692A ZA 200006692 A ZA200006692 A ZA 200006692A ZA 200006692 B ZA200006692 B ZA 200006692B
Authority
ZA
South Africa
Prior art keywords
material system
electrons
electrical charge
providing
electron
Prior art date
Application number
ZA200006692A
Other languages
English (en)
Inventor
Petr Viscor
Niels Ole Nielsen
Armin Delong
Vladimir Kolarik
Original Assignee
Petr Viscor
Niels Ole Nielsen
Armin Delong
Vladimir Kolarik
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Petr Viscor, Niels Ole Nielsen, Armin Delong, Vladimir Kolarik filed Critical Petr Viscor
Publication of ZA200006692B publication Critical patent/ZA200006692B/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02Main electrodes
    • H01J1/30Cold cathodes, e.g. field-emissive cathode
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02Main electrodes
    • H01J1/30Cold cathodes, e.g. field-emissive cathode
    • H01J1/312Cold cathodes, e.g. field-emissive cathode having an electric field perpendicular to the surface, e.g. tunnel-effect cathodes of metal-insulator-metal [MIM] type
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J35/00X-ray tubes
    • H01J35/02Details
    • H01J35/04Electrodes ; Mutual position thereof; Constructional adaptations therefor
    • H01J35/06Cathodes
    • H01J35/065Field emission, photo emission or secondary emission cathodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2235/00X-ray tubes
    • H01J2235/06Cathode assembly
    • H01J2235/062Cold cathodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Cold Cathode And The Manufacture (AREA)
  • Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Electrodes For Cathode-Ray Tubes (AREA)
  • Discharge Lamps And Accessories Thereof (AREA)
  • Bipolar Transistors (AREA)
ZA200006692A 1998-06-11 2000-11-16 Planar electron emitter (PEE). ZA200006692B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US8897898P 1998-06-11 1998-06-11

Publications (1)

Publication Number Publication Date
ZA200006692B true ZA200006692B (en) 2002-02-18

Family

ID=22214628

Family Applications (1)

Application Number Title Priority Date Filing Date
ZA200006692A ZA200006692B (en) 1998-06-11 2000-11-16 Planar electron emitter (PEE).

Country Status (18)

Country Link
US (1) US7399987B1 (enExample)
EP (1) EP1086480B1 (enExample)
JP (1) JP2002518788A (enExample)
KR (1) KR20010083046A (enExample)
CN (1) CN1202545C (enExample)
AT (1) ATE249094T1 (enExample)
AU (1) AU755927B2 (enExample)
BR (1) BR9912185A (enExample)
CA (1) CA2332556A1 (enExample)
CZ (1) CZ20004455A3 (enExample)
DE (1) DE69911012T2 (enExample)
HU (1) HUP0103631A3 (enExample)
IL (1) IL139693A0 (enExample)
RU (1) RU2224327C2 (enExample)
SK (1) SK18512000A3 (enExample)
UA (1) UA64802C2 (enExample)
WO (1) WO1999065050A1 (enExample)
ZA (1) ZA200006692B (enExample)

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TW497278B (en) * 2000-03-24 2002-08-01 Japan Science & Tech Corp Method for generating trajectory electron, trajectory electron solid state semiconductor element
US7129626B2 (en) * 2001-03-20 2006-10-31 Copytele, Inc. Pixel structure for an edge-emitter field-emission display
US6643248B2 (en) * 2001-04-16 2003-11-04 Hewlett-Packard Development Company, L.P. Data storage device
US6891176B2 (en) * 2003-06-20 2005-05-10 Nanion Aps Planar electron emitter with extended lifetime and system using same
US6872964B2 (en) 2003-08-20 2005-03-29 Hewlett-Packard Development Company, L.P. Data storage device
EP1801842A1 (en) * 2005-12-23 2007-06-27 Nederlandse Organisatie voor toegepast-natuurwetenschappelijk Onderzoek TNO Device for generating X-rays and use of such a device
JP2007194087A (ja) * 2006-01-19 2007-08-02 Matsushita Electric Ind Co Ltd 電子放出装置およびその製造方法
EP2031630A4 (en) * 2006-05-31 2010-07-21 Panasonic Corp PLASMA DISPLAY PANEL AND METHOD FOR THE PRODUCTION THEREOF
JP5354598B2 (ja) * 2009-12-17 2013-11-27 独立行政法人産業技術総合研究所 電子源
WO2011079434A1 (zh) * 2009-12-29 2011-07-07 海洋王照明科技股份有限公司 场致发射白光的装置
KR101962974B1 (ko) * 2010-01-08 2019-03-27 티에이이 테크놀로지스, 인크. 고에너지 광자들의 전기로의 변환
CN102243967B (zh) * 2011-05-25 2013-05-22 西安交通大学 基于多孔介电材料薄膜的弹道场发射显示器件阴极的制备方法
US9443691B2 (en) 2013-12-30 2016-09-13 General Electric Company Electron emission surface for X-ray generation
GB2531326B (en) * 2014-10-16 2020-08-05 Adaptix Ltd An X-Ray emitter panel and a method of designing such an X-Ray emitter panel
US9525077B1 (en) * 2015-11-04 2016-12-20 Texas Instruments Incorporated Integration of a baritt diode
ES2858089T3 (es) 2016-01-07 2021-09-29 Univ New York State Res Found Fotomultiplicador de selenio

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GB1303659A (enExample) 1969-11-12 1973-01-17
NL184589C (nl) 1979-07-13 1989-09-01 Philips Nv Halfgeleiderinrichting voor het opwekken van een elektronenbundel en werkwijze voor het vervaardigen van een dergelijke halfgeleiderinrichting.
US4683399A (en) 1981-06-29 1987-07-28 Rockwell International Corporation Silicon vacuum electron devices
GB2109160B (en) * 1981-11-06 1985-05-30 Philips Electronic Associated Semiconductor electron source for display tubes and other equipment
NL8400297A (nl) 1984-02-01 1985-09-02 Philips Nv Halfgeleiderinrichting voor het opwekken van een elektronenbundel.
NL8600675A (nl) 1986-03-17 1987-10-16 Philips Nv Halfgeleiderinrichting voor het opwekken van een elektronenstroom.
US4823004A (en) 1987-11-24 1989-04-18 California Institute Of Technology Tunnel and field effect carrier ballistics
EP0367195A3 (en) 1988-10-31 1991-10-02 Matsushita Electric Industrial Co., Ltd. Mim cold-cathode electron emission elements and methods of manufacture thereof
DE69027960T2 (de) 1989-09-04 1997-01-09 Canon Kk Elektronen emittierendes Element und Verfahren zur Herstellung desselben
US5229682A (en) 1989-12-18 1993-07-20 Seiko Epson Corporation Field electron emission device
NL9000297A (nl) 1990-02-08 1991-09-02 Philips Nv Ladingsgekoppelde inrichting.
JPH0425175A (ja) 1990-05-21 1992-01-28 Canon Inc ダイオード
RU2020642C1 (ru) * 1990-05-29 1994-09-30 Научно-исследовательский институт "Платан" с заводом Плоский электронно-оптический преобразователь
US5212426A (en) 1991-01-24 1993-05-18 Motorola, Inc. Integrally controlled field emission flat display device
DE69220823T2 (de) 1991-02-20 1998-01-22 Canon Kk Halbleiter-Elektronenemissionseinrichtung
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US5536193A (en) 1991-11-07 1996-07-16 Microelectronics And Computer Technology Corporation Method of making wide band gap field emitter
US5659224A (en) 1992-03-16 1997-08-19 Microelectronics And Computer Technology Corporation Cold cathode display device
US5463275A (en) 1992-07-10 1995-10-31 Trw Inc. Heterojunction step doped barrier cathode emitter
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DK146692D0 (da) 1992-12-07 1992-12-07 Petr Viscor Fremgangsmaade og apparat til bestemmelse af karakteristiske elektriske materialeparametre for halvledende materialer
EP0601637B1 (en) 1992-12-08 1999-10-27 Koninklijke Philips Electronics N.V. Cathode ray tube comprising a semiconductor cathode
RU2065228C1 (ru) * 1993-06-04 1996-08-10 Институт физики полупроводников СО РАН Многоэлементный ик-приемник на горячих носителях с длинноволновой границей 0,2 эв
US5340997A (en) 1993-09-20 1994-08-23 Hewlett-Packard Company Electrostatically shielded field emission microelectronic device
CH689190A5 (fr) 1993-10-19 1998-11-30 Hans Ulrich Meyer Instrument de mesure de longueurs ou d'angles.
US5528103A (en) 1994-01-31 1996-06-18 Silicon Video Corporation Field emitter with focusing ridges situated to sides of gate
US5631196A (en) 1994-07-18 1997-05-20 Motorola Method for making inversion mode diamond electron source
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US5712490A (en) 1996-11-21 1998-01-27 Itt Industries, Inc. Ramp cathode structures for vacuum emission

Also Published As

Publication number Publication date
HK1034358A1 (en) 2001-10-19
AU755927B2 (en) 2003-01-02
WO1999065050A1 (en) 1999-12-16
CZ20004455A3 (cs) 2002-06-12
JP2002518788A (ja) 2002-06-25
EP1086480A1 (en) 2001-03-28
KR20010083046A (ko) 2001-08-31
SK18512000A3 (sk) 2003-01-09
CA2332556A1 (en) 1999-12-16
HUP0103631A2 (hu) 2002-01-28
CN1202545C (zh) 2005-05-18
CN1305636A (zh) 2001-07-25
AU4358999A (en) 1999-12-30
EP1086480B1 (en) 2003-09-03
US7399987B1 (en) 2008-07-15
ATE249094T1 (de) 2003-09-15
UA64802C2 (uk) 2004-03-15
BR9912185A (pt) 2001-04-10
RU2224327C2 (ru) 2004-02-20
HUP0103631A3 (en) 2004-07-28
IL139693A0 (en) 2002-02-10
DE69911012D1 (de) 2003-10-09
DE69911012T2 (de) 2004-06-17

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