CA2332556A1 - Planar electron emitter (pee) - Google Patents
Planar electron emitter (pee) Download PDFInfo
- Publication number
- CA2332556A1 CA2332556A1 CA002332556A CA2332556A CA2332556A1 CA 2332556 A1 CA2332556 A1 CA 2332556A1 CA 002332556 A CA002332556 A CA 002332556A CA 2332556 A CA2332556 A CA 2332556A CA 2332556 A1 CA2332556 A1 CA 2332556A1
- Authority
- CA
- Canada
- Prior art keywords
- electron
- electrons
- material layer
- layer
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 239000000463 material Substances 0.000 claims abstract description 194
- 239000004065 semiconductor Substances 0.000 claims abstract description 166
- 230000005684 electric field Effects 0.000 claims abstract description 48
- 239000013078 crystal Substances 0.000 claims abstract description 17
- 238000000034 method Methods 0.000 claims description 68
- 230000003287 optical effect Effects 0.000 claims description 52
- 229910052751 metal Inorganic materials 0.000 claims description 40
- 239000002184 metal Substances 0.000 claims description 40
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 22
- 229910052710 silicon Inorganic materials 0.000 claims description 22
- 239000010703 silicon Substances 0.000 claims description 22
- 239000010408 film Substances 0.000 claims description 13
- 239000012535 impurity Substances 0.000 claims description 13
- 239000002019 doping agent Substances 0.000 claims description 12
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 12
- 229910052737 gold Inorganic materials 0.000 claims description 11
- 239000010931 gold Substances 0.000 claims description 11
- 239000011159 matrix material Substances 0.000 claims description 11
- 229910052782 aluminium Inorganic materials 0.000 claims description 10
- 239000004411 aluminium Substances 0.000 claims description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 10
- 238000001803 electron scattering Methods 0.000 claims description 10
- 229910052732 germanium Inorganic materials 0.000 claims description 10
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 10
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 10
- 238000002360 preparation method Methods 0.000 claims description 10
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 8
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 8
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 8
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 8
- 229910052804 chromium Inorganic materials 0.000 claims description 8
- 239000011651 chromium Substances 0.000 claims description 8
- 239000003086 colorant Substances 0.000 claims description 8
- 229910052738 indium Inorganic materials 0.000 claims description 8
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 8
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 8
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 8
- SKJCKYVIQGBWTN-UHFFFAOYSA-N (4-hydroxyphenyl) methanesulfonate Chemical compound CS(=O)(=O)OC1=CC=C(O)C=C1 SKJCKYVIQGBWTN-UHFFFAOYSA-N 0.000 claims description 7
- 229910000673 Indium arsenide Inorganic materials 0.000 claims description 7
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 claims description 7
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 7
- 238000010521 absorption reaction Methods 0.000 claims description 7
- MDPILPRLPQYEEN-UHFFFAOYSA-N aluminium arsenide Chemical compound [As]#[Al] MDPILPRLPQYEEN-UHFFFAOYSA-N 0.000 claims description 7
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 claims description 7
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 claims description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 239000010949 copper Substances 0.000 claims description 6
- 229910052697 platinum Inorganic materials 0.000 claims description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 5
- 229910052698 phosphorus Inorganic materials 0.000 claims description 5
- 239000011574 phosphorus Substances 0.000 claims description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 4
- 229910052693 Europium Inorganic materials 0.000 claims description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 4
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims description 4
- 229910052777 Praseodymium Inorganic materials 0.000 claims description 4
- 229910052772 Samarium Inorganic materials 0.000 claims description 4
- 229910052769 Ytterbium Inorganic materials 0.000 claims description 4
- 229910052787 antimony Inorganic materials 0.000 claims description 4
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 4
- 229910052785 arsenic Inorganic materials 0.000 claims description 4
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 4
- 229910052796 boron Inorganic materials 0.000 claims description 4
- 229910052792 caesium Inorganic materials 0.000 claims description 4
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 claims description 4
- 229910052799 carbon Inorganic materials 0.000 claims description 4
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 claims description 4
- 229910052730 francium Inorganic materials 0.000 claims description 4
- KLMCZVJOEAUDNE-UHFFFAOYSA-N francium atom Chemical compound [Fr] KLMCZVJOEAUDNE-UHFFFAOYSA-N 0.000 claims description 4
- 229910052733 gallium Inorganic materials 0.000 claims description 4
- 229910052744 lithium Inorganic materials 0.000 claims description 4
- 238000005498 polishing Methods 0.000 claims description 4
- PUDIUYLPXJFUGB-UHFFFAOYSA-N praseodymium atom Chemical compound [Pr] PUDIUYLPXJFUGB-UHFFFAOYSA-N 0.000 claims description 4
- 229910052701 rubidium Inorganic materials 0.000 claims description 4
- IGLNJRXAVVLDKE-UHFFFAOYSA-N rubidium atom Chemical compound [Rb] IGLNJRXAVVLDKE-UHFFFAOYSA-N 0.000 claims description 4
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 claims description 4
- 229910052712 strontium Inorganic materials 0.000 claims description 4
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 claims description 4
- 238000004381 surface treatment Methods 0.000 claims description 4
- 229910052715 tantalum Inorganic materials 0.000 claims description 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 4
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 claims description 4
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 3
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims description 3
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 3
- 239000005864 Sulphur Substances 0.000 claims description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 3
- 229910052790 beryllium Inorganic materials 0.000 claims description 3
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052793 cadmium Inorganic materials 0.000 claims description 3
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052749 magnesium Inorganic materials 0.000 claims description 3
- 239000011777 magnesium Substances 0.000 claims description 3
- 229910052711 selenium Inorganic materials 0.000 claims description 3
- 239000011669 selenium Substances 0.000 claims description 3
- 229910052714 tellurium Inorganic materials 0.000 claims description 3
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims description 3
- 239000010409 thin film Substances 0.000 claims description 3
- 229910052718 tin Inorganic materials 0.000 claims description 3
- 229910052725 zinc Inorganic materials 0.000 claims description 3
- 239000011701 zinc Substances 0.000 claims description 3
- 229910052797 bismuth Inorganic materials 0.000 claims description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 2
- 239000004020 conductor Substances 0.000 claims description 2
- 230000003746 surface roughness Effects 0.000 claims description 2
- OTZGYUUQQRXJMY-UHFFFAOYSA-N $l^{2}-bismuthanylidenesilicon Chemical compound [Bi]=[Si] OTZGYUUQQRXJMY-UHFFFAOYSA-N 0.000 claims 1
- 239000012212 insulator Substances 0.000 abstract description 19
- 239000000758 substrate Substances 0.000 description 40
- 235000012431 wafers Nutrition 0.000 description 23
- 230000008569 process Effects 0.000 description 22
- 230000001133 acceleration Effects 0.000 description 19
- 238000010276 construction Methods 0.000 description 18
- 238000013461 design Methods 0.000 description 16
- 238000010586 diagram Methods 0.000 description 16
- 230000004888 barrier function Effects 0.000 description 14
- 238000006243 chemical reaction Methods 0.000 description 13
- 238000000609 electron-beam lithography Methods 0.000 description 12
- 239000000126 substance Substances 0.000 description 12
- 230000003321 amplification Effects 0.000 description 11
- 230000005669 field effect Effects 0.000 description 11
- 239000011810 insulating material Substances 0.000 description 11
- 238000004519 manufacturing process Methods 0.000 description 11
- 238000003199 nucleic acid amplification method Methods 0.000 description 11
- 238000012545 processing Methods 0.000 description 10
- 238000001514 detection method Methods 0.000 description 9
- 230000000694 effects Effects 0.000 description 9
- 238000005286 illumination Methods 0.000 description 9
- 238000002347 injection Methods 0.000 description 9
- 239000007924 injection Substances 0.000 description 9
- 238000010894 electron beam technology Methods 0.000 description 7
- 230000015556 catabolic process Effects 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- 230000000670 limiting effect Effects 0.000 description 6
- 238000000386 microscopy Methods 0.000 description 6
- 230000005670 electromagnetic radiation Effects 0.000 description 5
- 238000001704 evaporation Methods 0.000 description 5
- 230000008020 evaporation Effects 0.000 description 5
- 230000006870 function Effects 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000002800 charge carrier Substances 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 230000001419 dependent effect Effects 0.000 description 4
- 229910003460 diamond Inorganic materials 0.000 description 4
- 239000010432 diamond Substances 0.000 description 4
- 238000005755 formation reaction Methods 0.000 description 4
- 238000001459 lithography Methods 0.000 description 4
- 239000007769 metal material Substances 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- 230000004044 response Effects 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- 101100063432 Caenorhabditis elegans dim-1 gene Proteins 0.000 description 3
- 238000003491 array Methods 0.000 description 3
- 238000006731 degradation reaction Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000005538 encapsulation Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000001393 microlithography Methods 0.000 description 3
- 230000005693 optoelectronics Effects 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
- 238000005215 recombination Methods 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 101000773151 Homo sapiens Thioredoxin-like protein 4B Proteins 0.000 description 2
- 102100030273 Thioredoxin-like protein 4B Human genes 0.000 description 2
- 239000011358 absorbing material Substances 0.000 description 2
- 230000006399 behavior Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000001493 electron microscopy Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 238000011835 investigation Methods 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 230000002829 reductive effect Effects 0.000 description 2
- 238000007493 shaping process Methods 0.000 description 2
- 230000008054 signal transmission Effects 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000007669 thermal treatment Methods 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 241000370685 Arge Species 0.000 description 1
- 101100042265 Caenorhabditis elegans sem-2 gene Proteins 0.000 description 1
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 1
- 108010076504 Protein Sorting Signals Proteins 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000003466 anti-cipated effect Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000010406 cathode material Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000002860 competitive effect Effects 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000002109 crystal growth method Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000002438 flame photometric detection Methods 0.000 description 1
- 239000007792 gaseous phase Substances 0.000 description 1
- 150000002343 gold Chemical class 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000002784 hot electron Substances 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000002427 irreversible effect Effects 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000003908 quality control method Methods 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 230000036962 time dependent Effects 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/30—Cold cathodes, e.g. field-emissive cathode
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/30—Cold cathodes, e.g. field-emissive cathode
- H01J1/312—Cold cathodes, e.g. field-emissive cathode having an electric field perpendicular to the surface, e.g. tunnel-effect cathodes of metal-insulator-metal [MIM] type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J35/00—X-ray tubes
- H01J35/02—Details
- H01J35/04—Electrodes ; Mutual position thereof; Constructional adaptations therefor
- H01J35/06—Cathodes
- H01J35/065—Field emission, photo emission or secondary emission cathodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2235/00—X-ray tubes
- H01J2235/06—Cathode assembly
- H01J2235/062—Cold cathodes
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Theoretical Computer Science (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mathematical Physics (AREA)
- Cold Cathode And The Manufacture (AREA)
- Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Bipolar Transistors (AREA)
- Electrodes For Cathode-Ray Tubes (AREA)
- Discharge Lamps And Accessories Thereof (AREA)
- Electron Sources, Ion Sources (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US8897898P | 1998-06-11 | 1998-06-11 | |
| US60/088,978 | 1998-06-11 | ||
| PCT/DK1999/000323 WO1999065050A1 (en) | 1998-06-11 | 1999-06-11 | Planar electron emitter (pee) |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA2332556A1 true CA2332556A1 (en) | 1999-12-16 |
Family
ID=22214628
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA002332556A Abandoned CA2332556A1 (en) | 1998-06-11 | 1999-06-11 | Planar electron emitter (pee) |
Country Status (18)
| Country | Link |
|---|---|
| US (1) | US7399987B1 (enExample) |
| EP (1) | EP1086480B1 (enExample) |
| JP (1) | JP2002518788A (enExample) |
| KR (1) | KR20010083046A (enExample) |
| CN (1) | CN1202545C (enExample) |
| AT (1) | ATE249094T1 (enExample) |
| AU (1) | AU755927B2 (enExample) |
| BR (1) | BR9912185A (enExample) |
| CA (1) | CA2332556A1 (enExample) |
| CZ (1) | CZ20004455A3 (enExample) |
| DE (1) | DE69911012T2 (enExample) |
| HU (1) | HUP0103631A3 (enExample) |
| IL (1) | IL139693A0 (enExample) |
| RU (1) | RU2224327C2 (enExample) |
| SK (1) | SK18512000A3 (enExample) |
| UA (1) | UA64802C2 (enExample) |
| WO (1) | WO1999065050A1 (enExample) |
| ZA (1) | ZA200006692B (enExample) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW497278B (en) * | 2000-03-24 | 2002-08-01 | Japan Science & Tech Corp | Method for generating trajectory electron, trajectory electron solid state semiconductor element |
| US7129626B2 (en) * | 2001-03-20 | 2006-10-31 | Copytele, Inc. | Pixel structure for an edge-emitter field-emission display |
| US6643248B2 (en) * | 2001-04-16 | 2003-11-04 | Hewlett-Packard Development Company, L.P. | Data storage device |
| US6891176B2 (en) | 2003-06-20 | 2005-05-10 | Nanion Aps | Planar electron emitter with extended lifetime and system using same |
| US6872964B2 (en) | 2003-08-20 | 2005-03-29 | Hewlett-Packard Development Company, L.P. | Data storage device |
| EP1801842A1 (en) * | 2005-12-23 | 2007-06-27 | Nederlandse Organisatie voor toegepast-natuurwetenschappelijk Onderzoek TNO | Device for generating X-rays and use of such a device |
| JP2007194087A (ja) * | 2006-01-19 | 2007-08-02 | Matsushita Electric Ind Co Ltd | 電子放出装置およびその製造方法 |
| KR20090012246A (ko) * | 2006-05-31 | 2009-02-02 | 파나소닉 주식회사 | 플라스마 디스플레이 패널과 그 제조방법 |
| JP5354598B2 (ja) * | 2009-12-17 | 2013-11-27 | 独立行政法人産業技術総合研究所 | 電子源 |
| US8446088B2 (en) * | 2009-12-29 | 2013-05-21 | Ocean's King Lighting Science & Technology Co., Ltd. | Field emission device for emitting white light |
| JP6097563B2 (ja) * | 2010-01-08 | 2017-03-15 | トライ アルファ エナジー， インコーポレイテッド | 高エネルギー光子から電気へのエネルギーの変換 |
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- 1999-06-11 RU RU2001101493/09A patent/RU2224327C2/ru not_active IP Right Cessation
- 1999-06-11 WO PCT/DK1999/000323 patent/WO1999065050A1/en not_active Ceased
- 1999-06-11 JP JP2000553971A patent/JP2002518788A/ja active Pending
- 1999-06-11 EP EP99926278A patent/EP1086480B1/en not_active Expired - Lifetime
- 1999-06-11 CN CNB998072478A patent/CN1202545C/zh not_active Expired - Fee Related
- 1999-06-11 CA CA002332556A patent/CA2332556A1/en not_active Abandoned
- 1999-06-11 AT AT99926278T patent/ATE249094T1/de not_active IP Right Cessation
- 1999-06-11 US US09/700,463 patent/US7399987B1/en not_active Expired - Fee Related
- 1999-06-11 HU HU0103631A patent/HUP0103631A3/hu unknown
- 1999-06-11 IL IL13969399A patent/IL139693A0/xx not_active IP Right Cessation
- 1999-06-11 SK SK1851-2000A patent/SK18512000A3/sk unknown
- 1999-06-11 DE DE69911012T patent/DE69911012T2/de not_active Expired - Fee Related
- 1999-06-11 CZ CZ20004455A patent/CZ20004455A3/cs unknown
- 1999-06-11 AU AU43589/99A patent/AU755927B2/en not_active Ceased
- 1999-06-11 BR BR9912185-9A patent/BR9912185A/pt not_active IP Right Cessation
- 1999-06-11 KR KR1020007014014A patent/KR20010083046A/ko not_active Ceased
- 1999-11-06 UA UA2001010209A patent/UA64802C2/uk unknown
-
2000
- 2000-11-16 ZA ZA200006692A patent/ZA200006692B/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| KR20010083046A (ko) | 2001-08-31 |
| CN1202545C (zh) | 2005-05-18 |
| UA64802C2 (uk) | 2004-03-15 |
| EP1086480A1 (en) | 2001-03-28 |
| HK1034358A1 (en) | 2001-10-19 |
| EP1086480B1 (en) | 2003-09-03 |
| WO1999065050A1 (en) | 1999-12-16 |
| RU2224327C2 (ru) | 2004-02-20 |
| SK18512000A3 (sk) | 2003-01-09 |
| DE69911012D1 (de) | 2003-10-09 |
| AU4358999A (en) | 1999-12-30 |
| ZA200006692B (en) | 2002-02-18 |
| HUP0103631A3 (en) | 2004-07-28 |
| CZ20004455A3 (cs) | 2002-06-12 |
| CN1305636A (zh) | 2001-07-25 |
| IL139693A0 (en) | 2002-02-10 |
| HUP0103631A2 (hu) | 2002-01-28 |
| BR9912185A (pt) | 2001-04-10 |
| JP2002518788A (ja) | 2002-06-25 |
| US7399987B1 (en) | 2008-07-15 |
| ATE249094T1 (de) | 2003-09-15 |
| AU755927B2 (en) | 2003-01-02 |
| DE69911012T2 (de) | 2004-06-17 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EEER | Examination request | ||
| FZDE | Discontinued |