JP2002518788A - プレーナ型電子エミッタ（ｐｅｅ） - Google Patents

プレーナ型電子エミッタ（ｐｅｅ）

Info

Publication number
JP2002518788A
JP2002518788A JP2000553971A JP2000553971A JP2002518788A JP 2002518788 A JP2002518788 A JP 2002518788A JP 2000553971 A JP2000553971 A JP 2000553971A JP 2000553971 A JP2000553971 A JP 2000553971A JP 2002518788 A JP2002518788 A JP 2002518788A
Authority
JP
Japan
Prior art keywords
charge
electrons
material system
semiconductor
electron
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000553971A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002518788A5 (enExample
Inventor
ペトル・ヴィスコル
ニールス・オレ・ニールセン
アルミン・デロング
ウラディミル・コラリク
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of JP2002518788A publication Critical patent/JP2002518788A/ja
Publication of JP2002518788A5 publication Critical patent/JP2002518788A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/312—Cold cathodes, e.g. field-emissive cathode having an electric field perpendicular to the surface, e.g. tunnel-effect cathodes of metal-insulator-metal [MIM] type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J35/00—X-ray tubes
    • H01J35/02—Details
    • H01J35/04—Electrodes ; Mutual position thereof; Constructional adaptations therefor
    • H01J35/06—Cathodes
    • H01J35/065—Field emission, photo emission or secondary emission cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2235/00—X-ray tubes
    • H01J2235/06—Cathode assembly
    • H01J2235/062—Cold cathodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Cold Cathode And The Manufacture (AREA)
  • Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Electrodes For Cathode-Ray Tubes (AREA)
  • Discharge Lamps And Accessories Thereof (AREA)
  • Bipolar Transistors (AREA)
JP2000553971A 1998-06-11 1999-06-11 プレーナ型電子エミッタ（ｐｅｅ） Pending JP2002518788A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US8897898P 1998-06-11 1998-06-11
US60/088,978 1998-06-11
PCT/DK1999/000323 WO1999065050A1 (en) 1998-06-11 1999-06-11 Planar electron emitter (pee)

Publications (2)

Publication Number Publication Date
JP2002518788A true JP2002518788A (ja) 2002-06-25
JP2002518788A5 JP2002518788A5 (enExample) 2006-08-03

Family

ID=22214628

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000553971A Pending JP2002518788A (ja) 1998-06-11 1999-06-11 プレーナ型電子エミッタ（ｐｅｅ）

Country Status (18)

Country Link
US (1) US7399987B1 (enExample)
EP (1) EP1086480B1 (enExample)
JP (1) JP2002518788A (enExample)
KR (1) KR20010083046A (enExample)
CN (1) CN1202545C (enExample)
AT (1) ATE249094T1 (enExample)
AU (1) AU755927B2 (enExample)
BR (1) BR9912185A (enExample)
CA (1) CA2332556A1 (enExample)
CZ (1) CZ20004455A3 (enExample)
DE (1) DE69911012T2 (enExample)
HU (1) HUP0103631A3 (enExample)
IL (1) IL139693A0 (enExample)
RU (1) RU2224327C2 (enExample)
SK (1) SK18512000A3 (enExample)
UA (1) UA64802C2 (enExample)
WO (1) WO1999065050A1 (enExample)
ZA (1) ZA200006692B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011129342A (ja) * 2009-12-17 2011-06-30 National Institute Of Advanced Industrial Science & Technology 電子源

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW497278B (en) * 2000-03-24 2002-08-01 Japan Science & Tech Corp Method for generating trajectory electron, trajectory electron solid state semiconductor element
US7129626B2 (en) * 2001-03-20 2006-10-31 Copytele, Inc. Pixel structure for an edge-emitter field-emission display
US6643248B2 (en) * 2001-04-16 2003-11-04 Hewlett-Packard Development Company, L.P. Data storage device
US6891176B2 (en) * 2003-06-20 2005-05-10 Nanion Aps Planar electron emitter with extended lifetime and system using same
US6872964B2 (en) 2003-08-20 2005-03-29 Hewlett-Packard Development Company, L.P. Data storage device
EP1801842A1 (en) * 2005-12-23 2007-06-27 Nederlandse Organisatie voor toegepast-natuurwetenschappelijk Onderzoek TNO Device for generating X-rays and use of such a device
JP2007194087A (ja) * 2006-01-19 2007-08-02 Matsushita Electric Ind Co Ltd 電子放出装置およびその製造方法
EP2031630A4 (en) * 2006-05-31 2010-07-21 Panasonic Corp PLASMA DISPLAY PANEL AND METHOD FOR THE PRODUCTION THEREOF
WO2011079434A1 (zh) * 2009-12-29 2011-07-07 海洋王照明科技股份有限公司 场致发射白光的装置
KR101962974B1 (ko) * 2010-01-08 2019-03-27 티에이이 테크놀로지스, 인크. 고에너지 광자들의 전기로의 변환
CN102243967B (zh) * 2011-05-25 2013-05-22 西安交通大学 基于多孔介电材料薄膜的弹道场发射显示器件阴极的制备方法
US9443691B2 (en) 2013-12-30 2016-09-13 General Electric Company Electron emission surface for X-ray generation
GB2531326B (en) * 2014-10-16 2020-08-05 Adaptix Ltd An X-Ray emitter panel and a method of designing such an X-Ray emitter panel
US9525077B1 (en) * 2015-11-04 2016-12-20 Texas Instruments Incorporated Integration of a baritt diode
ES2858089T3 (es) 2016-01-07 2021-09-29 Univ New York State Res Found Fotomultiplicador de selenio

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE716262A (enExample) * 1967-07-25 1968-11-04
GB1303659A (enExample) 1969-11-12 1973-01-17
NL184589C (nl) 1979-07-13 1989-09-01 Philips Nv Halfgeleiderinrichting voor het opwekken van een elektronenbundel en werkwijze voor het vervaardigen van een dergelijke halfgeleiderinrichting.
US4683399A (en) 1981-06-29 1987-07-28 Rockwell International Corporation Silicon vacuum electron devices
GB2109160B (en) * 1981-11-06 1985-05-30 Philips Electronic Associated Semiconductor electron source for display tubes and other equipment
NL8400297A (nl) 1984-02-01 1985-09-02 Philips Nv Halfgeleiderinrichting voor het opwekken van een elektronenbundel.
NL8600675A (nl) 1986-03-17 1987-10-16 Philips Nv Halfgeleiderinrichting voor het opwekken van een elektronenstroom.
US4823004A (en) 1987-11-24 1989-04-18 California Institute Of Technology Tunnel and field effect carrier ballistics
EP0367195A3 (en) 1988-10-31 1991-10-02 Matsushita Electric Industrial Co., Ltd. Mim cold-cathode electron emission elements and methods of manufacture thereof
DE69027960T2 (de) 1989-09-04 1997-01-09 Canon Kk Elektronen emittierendes Element und Verfahren zur Herstellung desselben
US5229682A (en) 1989-12-18 1993-07-20 Seiko Epson Corporation Field electron emission device
NL9000297A (nl) 1990-02-08 1991-09-02 Philips Nv Ladingsgekoppelde inrichting.
JPH0425175A (ja) 1990-05-21 1992-01-28 Canon Inc ダイオード
RU2020642C1 (ru) * 1990-05-29 1994-09-30 Научно-исследовательский институт "Платан" с заводом Плоский электронно-оптический преобразователь
US5212426A (en) 1991-01-24 1993-05-18 Motorola, Inc. Integrally controlled field emission flat display device
DE69220823T2 (de) 1991-02-20 1998-01-22 Canon Kk Halbleiter-Elektronenemissionseinrichtung
JP3126158B2 (ja) * 1991-04-10 2001-01-22 日本放送協会 薄膜冷陰極
US5536193A (en) 1991-11-07 1996-07-16 Microelectronics And Computer Technology Corporation Method of making wide band gap field emitter
US5659224A (en) 1992-03-16 1997-08-19 Microelectronics And Computer Technology Corporation Cold cathode display device
US5463275A (en) 1992-07-10 1995-10-31 Trw Inc. Heterojunction step doped barrier cathode emitter
EP0597537B1 (en) 1992-11-12 1998-02-11 Koninklijke Philips Electronics N.V. Electron tube comprising a semiconductor cathode
DK146692D0 (da) 1992-12-07 1992-12-07 Petr Viscor Fremgangsmaade og apparat til bestemmelse af karakteristiske elektriske materialeparametre for halvledende materialer
EP0601637B1 (en) 1992-12-08 1999-10-27 Koninklijke Philips Electronics N.V. Cathode ray tube comprising a semiconductor cathode
RU2065228C1 (ru) * 1993-06-04 1996-08-10 Институт физики полупроводников СО РАН Многоэлементный ик-приемник на горячих носителях с длинноволновой границей 0,2 эв
US5340997A (en) 1993-09-20 1994-08-23 Hewlett-Packard Company Electrostatically shielded field emission microelectronic device
CH689190A5 (fr) 1993-10-19 1998-11-30 Hans Ulrich Meyer Instrument de mesure de longueurs ou d'angles.
US5528103A (en) 1994-01-31 1996-06-18 Silicon Video Corporation Field emitter with focusing ridges situated to sides of gate
US5631196A (en) 1994-07-18 1997-05-20 Motorola Method for making inversion mode diamond electron source
US5729094A (en) * 1996-04-15 1998-03-17 Massachusetts Institute Of Technology Energetic-electron emitters
US5712490A (en) 1996-11-21 1998-01-27 Itt Industries, Inc. Ramp cathode structures for vacuum emission

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011129342A (ja) * 2009-12-17 2011-06-30 National Institute Of Advanced Industrial Science & Technology 電子源

Also Published As

Publication number Publication date
HK1034358A1 (en) 2001-10-19
AU755927B2 (en) 2003-01-02
WO1999065050A1 (en) 1999-12-16
ZA200006692B (en) 2002-02-18
CZ20004455A3 (cs) 2002-06-12
EP1086480A1 (en) 2001-03-28
KR20010083046A (ko) 2001-08-31
SK18512000A3 (sk) 2003-01-09
CA2332556A1 (en) 1999-12-16
HUP0103631A2 (hu) 2002-01-28
CN1202545C (zh) 2005-05-18
CN1305636A (zh) 2001-07-25
AU4358999A (en) 1999-12-30
EP1086480B1 (en) 2003-09-03
US7399987B1 (en) 2008-07-15
ATE249094T1 (de) 2003-09-15
UA64802C2 (uk) 2004-03-15
BR9912185A (pt) 2001-04-10
RU2224327C2 (ru) 2004-02-20
HUP0103631A3 (en) 2004-07-28
IL139693A0 (en) 2002-02-10
DE69911012D1 (de) 2003-10-09
DE69911012T2 (de) 2004-06-17

Similar Documents

Publication Publication Date Title
EP0706196B1 (en) An electron emission cathode; an electron emission device, a flat display, a thermoelectric cooling device incorporating the same; and a method for producing the electron emission cathode
JP2002518788A (ja) プレーナ型電子エミッタ（ｐｅｅ）
JP3226745B2 (ja) 半導体冷電子放出素子及びこれを用いた装置
US7455565B2 (en) Fabrication of group III-nitride photocathode having Cs activation layer
Nakajima et al. Generation of ballistic electrons in nanocrystalline porous silicon layers and its application to a solid-state planar luminescent device
JPH10509559A (ja) 光活性化を使用する電場促進拡散
US4801994A (en) Semiconductor electron-current generating device having improved cathode efficiency
JPS5887733A (ja) 電子流放出半導体装置
US20150276950A1 (en) Compact solid-state neutron detector
Thomas et al. Photosensitive field emission from silicon point arrays
JP2003529183A (ja) ダイヤモンドで支持された電子ソース用光電陰極
JP3187302B2 (ja) 電子放出陰極、それを用いた電子放出素子、フラットディスプレイ、及び熱電冷却装置、ならびに電子放出陰極の製造方法
CA1253260A (en) Semiconductor device for generating an electron beam
US6570165B1 (en) Radiation assisted electron emission device
WO2006005803A1 (en) Semiconductor radiation detector
HK1034358B (en) Planar electron emitter (pee)
Sun et al. Products of Optoelectronic Devices
Maslyanchuk et al. Charge Transport Properties of CdTe X/γ-Rays Detectors with TiO x Schottky Contacts
Aebi et al. Near IR photocathode development
RU2658580C1 (ru) Алмазный фотокатод
Yuan et al. Quantum confinement: mechanism for visible electroluminescence from spark-processed silicon
JP3156359B2 (ja) 原子細線ｐｎ接合素子
Grant GaN radiation detectors for particle physics and synchrotron applications
Rindermann et al. In-situ electrical characterisation of a photodiode during nano-structuring with a focussed ion beam
Khan ELECTRICAL AND OPTICAL PROPERTIES OF CHLORINE ION-IMPLANTED ZINC-TELLURIDE.

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20060608

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20060608

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20090908

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20100223