DE69907349D1 - Verfahren zur Verminderung von Stress in GaN Bauelementen - Google Patents

Verfahren zur Verminderung von Stress in GaN Bauelementen

Info

Publication number
DE69907349D1
DE69907349D1 DE69907349T DE69907349T DE69907349D1 DE 69907349 D1 DE69907349 D1 DE 69907349D1 DE 69907349 T DE69907349 T DE 69907349T DE 69907349 T DE69907349 T DE 69907349T DE 69907349 D1 DE69907349 D1 DE 69907349D1
Authority
DE
Germany
Prior art keywords
reducing stress
gan devices
gan
devices
stress
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69907349T
Other languages
English (en)
Other versions
DE69907349T2 (de
Inventor
Shih-Yuan Wang
Yong Chen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lumileds LLC
Original Assignee
Lumileds LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lumileds LLC filed Critical Lumileds LLC
Application granted granted Critical
Publication of DE69907349D1 publication Critical patent/DE69907349D1/de
Publication of DE69907349T2 publication Critical patent/DE69907349T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02694—Controlling the interface between substrate and epitaxial layer, e.g. by ion implantation followed by annealing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02441—Group 14 semiconducting materials
    • H01L21/02447—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Led Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE69907349T 1998-09-14 1999-07-08 Verfahren zur Verminderung von Stress in GaN Bauelementen Expired - Lifetime DE69907349T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US152848 1998-09-14
US09/152,848 US6113685A (en) 1998-09-14 1998-09-14 Method for relieving stress in GaN devices

Publications (2)

Publication Number Publication Date
DE69907349D1 true DE69907349D1 (de) 2003-06-05
DE69907349T2 DE69907349T2 (de) 2004-02-12

Family

ID=22544708

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69907349T Expired - Lifetime DE69907349T2 (de) 1998-09-14 1999-07-08 Verfahren zur Verminderung von Stress in GaN Bauelementen

Country Status (4)

Country Link
US (1) US6113685A (de)
EP (1) EP0987741B1 (de)
JP (1) JP2000091632A (de)
DE (1) DE69907349T2 (de)

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DE19640594B4 (de) 1996-10-01 2016-08-04 Osram Gmbh Bauelement
US6071795A (en) * 1998-01-23 2000-06-06 The Regents Of The University Of California Separation of thin films from transparent substrates by selective optical processing
JP3525061B2 (ja) * 1998-09-25 2004-05-10 株式会社東芝 半導体発光素子の製造方法
JP2000244068A (ja) * 1998-12-22 2000-09-08 Pioneer Electronic Corp 窒化物半導体レーザ及びその製造方法
TW464953B (en) * 1999-04-14 2001-11-21 Matsushita Electronics Corp Method of manufacturing III nitride base compound semiconductor substrate
JP2000323797A (ja) * 1999-05-10 2000-11-24 Pioneer Electronic Corp 窒化物半導体レーザ及びその製造方法
US6380108B1 (en) * 1999-12-21 2002-04-30 North Carolina State University Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on weak posts, and gallium nitride semiconductor structures fabricated thereby
JP4060511B2 (ja) * 2000-03-28 2008-03-12 パイオニア株式会社 窒化物半導体素子の分離方法
JP3906653B2 (ja) * 2000-07-18 2007-04-18 ソニー株式会社 画像表示装置及びその製造方法
US6864158B2 (en) * 2001-01-29 2005-03-08 Matsushita Electric Industrial Co., Ltd. Method of manufacturing nitride semiconductor substrate
JP4649745B2 (ja) * 2001-02-01 2011-03-16 ソニー株式会社 発光素子の転写方法
US6562701B2 (en) * 2001-03-23 2003-05-13 Matsushita Electric Industrial Co., Ltd. Method of manufacturing nitride semiconductor substrate
US6589857B2 (en) 2001-03-23 2003-07-08 Matsushita Electric Industrial Co., Ltd. Manufacturing method of semiconductor film
JP2003007616A (ja) * 2001-03-23 2003-01-10 Matsushita Electric Ind Co Ltd 半導体膜の製造方法
JP2002343717A (ja) * 2001-05-18 2002-11-29 Matsushita Electric Ind Co Ltd 半導体結晶の製造方法
US6498113B1 (en) * 2001-06-04 2002-12-24 Cbl Technologies, Inc. Free standing substrates by laser-induced decoherency and regrowth
JP3856750B2 (ja) 2001-11-13 2006-12-13 松下電器産業株式会社 半導体装置及びその製造方法
EP1363318A1 (de) * 2001-12-20 2003-11-19 Matsushita Electric Industrial Co., Ltd. Vwerfahren zur Herstellung eines Nitrid-Halbleitersubstrates und Verfahren zur Herstellung eines Nitrid-Halbleiterbauelements
JP2004014938A (ja) * 2002-06-10 2004-01-15 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
EP1484794A1 (de) * 2003-06-06 2004-12-08 S.O.I. Tec Silicon on Insulator Technologies S.A. Verfahren zur Herstellung eines Trägersubstrats
US7261777B2 (en) * 2003-06-06 2007-08-28 S.O.I.Tec Silicon On Insulator Technologies Method for fabricating an epitaxial substrate
KR100558436B1 (ko) * 2003-06-10 2006-03-10 삼성전기주식회사 질화갈륨 단결정 기판의 제조방법
EP1664393B1 (de) * 2003-07-14 2013-11-06 Allegis Technologies, Inc. VERFAHREN ZUR Herstellung VON GALLIUMNITRID LED
DE10340409B4 (de) * 2003-09-02 2007-05-24 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Trägerwafer und Verfahren zum Bearbeiten eines Halbleiterwafers unter Verwendung eines Trägerwafers
US7202141B2 (en) * 2004-03-29 2007-04-10 J.P. Sercel Associates, Inc. Method of separating layers of material
US6956246B1 (en) 2004-06-03 2005-10-18 Lumileds Lighting U.S., Llc Resonant cavity III-nitride light emitting devices fabricated by growth substrate removal
US7002820B2 (en) * 2004-06-17 2006-02-21 Hewlett-Packard Development Company, L.P. Semiconductor storage device
DE102005047152A1 (de) * 2005-09-30 2007-04-12 Osram Opto Semiconductors Gmbh Epitaxiesubstrat, Verfahren zu seiner Herstellung und Verfahren zur Herstellung eines Halbleiterchips
JP5707903B2 (ja) * 2010-12-02 2015-04-30 富士通株式会社 化合物半導体装置及びその製造方法
DE112016002435T5 (de) 2015-05-29 2018-02-22 Analog Devices Inc. Galliumnitridapparat mit einer an Fangstellen reichen Region
WO2019065689A1 (ja) * 2017-09-27 2019-04-04 日本碍子株式会社 下地基板、機能素子および下地基板の製造方法
WO2019064783A1 (ja) * 2017-09-27 2019-04-04 日本碍子株式会社 下地基板、機能素子および下地基板の製造方法

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4882122A (en) * 1988-02-10 1989-11-21 General Electric Company Method and apparatus for obtaining a water sample from the core of a boiling water reactor
US5079616A (en) * 1988-02-11 1992-01-07 Gte Laboratories Incorporated Semiconductor structure
FR2650704B1 (fr) * 1989-08-01 1994-05-06 Thomson Csf Procede de fabrication par epitaxie de couches monocristallines de materiaux a parametres de mailles differents
JP2938608B2 (ja) * 1991-04-18 1999-08-23 松下電器産業株式会社 発光素子
JPH04320023A (ja) * 1991-04-18 1992-11-10 Matsushita Electric Ind Co Ltd 結晶基板の製造方法
JP2938607B2 (ja) * 1991-04-18 1999-08-23 松下電器産業株式会社 発光素子
JP2706592B2 (ja) * 1992-01-10 1998-01-28 徳島大学長 結晶基板の製造方法
JPH07273366A (ja) * 1994-03-28 1995-10-20 Pioneer Electron Corp Ｉｉｉ族窒化物発光素子の製造方法
US5689123A (en) * 1994-04-07 1997-11-18 Sdl, Inc. III-V aresenide-nitride semiconductor materials and devices
US5598014A (en) * 1995-02-28 1997-01-28 Honeywell Inc. High gain ultraviolet photoconductor based on wide bandgap nitrides
JPH09275223A (ja) * 1995-04-12 1997-10-21 Seiko Instr Kk 半導体放射線検出装置
JP3688843B2 (ja) * 1996-09-06 2005-08-31 株式会社東芝 窒化物系半導体素子の製造方法
JP3593441B2 (ja) * 1996-09-26 2004-11-24 株式会社東芝 窒化物系化合物半導体発光素子およびその製造方法
DE19640594B4 (de) * 1996-10-01 2016-08-04 Osram Gmbh Bauelement
JPH10126010A (ja) * 1996-10-23 1998-05-15 Ricoh Co Ltd 半導体レーザ装置の製造方法
US5927995A (en) * 1997-04-09 1999-07-27 Hewlett-Packard Company Reduction of threading dislocations by amorphization and recrystallization

Also Published As

Publication number Publication date
DE69907349T2 (de) 2004-02-12
US6113685A (en) 2000-09-05
JP2000091632A (ja) 2000-03-31
EP0987741A1 (de) 2000-03-22
EP0987741B1 (de) 2003-05-02

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