DE69902221T2 - Speicherschaltungen mit eingebautem Selbsttest - Google Patents

Speicherschaltungen mit eingebautem Selbsttest

Info

Publication number
DE69902221T2
DE69902221T2 DE69902221T DE69902221T DE69902221T2 DE 69902221 T2 DE69902221 T2 DE 69902221T2 DE 69902221 T DE69902221 T DE 69902221T DE 69902221 T DE69902221 T DE 69902221T DE 69902221 T2 DE69902221 T2 DE 69902221T2
Authority
DE
Germany
Prior art keywords
test
built
self
circuit
bist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69902221T
Other languages
English (en)
Other versions
DE69902221D1 (de
Inventor
Shi-Yu Huang
Ding-Ming Kwai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Taiwan Semiconductor Manufacturing Co TSMC Ltd
Original Assignee
Taiwan Semiconductor Manufacturing Co TSMC Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Taiwan Semiconductor Manufacturing Co TSMC Ltd filed Critical Taiwan Semiconductor Manufacturing Co TSMC Ltd
Publication of DE69902221D1 publication Critical patent/DE69902221D1/de
Application granted granted Critical
Publication of DE69902221T2 publication Critical patent/DE69902221T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C29/00Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/14Implementation of control logic, e.g. test mode decoders
    • G11C29/16Implementation of control logic, e.g. test mode decoders using microprogrammed units, e.g. state machines

Landscapes

  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Tests Of Electronic Circuits (AREA)
DE69902221T 1999-02-23 1999-02-23 Speicherschaltungen mit eingebautem Selbsttest Expired - Lifetime DE69902221T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP99103478A EP1031994B1 (de) 1999-02-23 1999-02-23 Speicherschaltungen mit eingebautem Selbsttest

Publications (2)

Publication Number Publication Date
DE69902221D1 DE69902221D1 (de) 2002-08-29
DE69902221T2 true DE69902221T2 (de) 2003-03-06

Family

ID=8237618

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69902221T Expired - Lifetime DE69902221T2 (de) 1999-02-23 1999-02-23 Speicherschaltungen mit eingebautem Selbsttest

Country Status (3)

Country Link
US (1) US6351837B1 (de)
EP (1) EP1031994B1 (de)
DE (1) DE69902221T2 (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7770016B2 (en) * 1999-07-29 2010-08-03 Intertrust Technologies Corporation Systems and methods for watermarking software and other media
US6829728B2 (en) * 2000-11-13 2004-12-07 Wu-Tung Cheng Full-speed BIST controller for testing embedded synchronous memories
US6650592B2 (en) * 2001-11-29 2003-11-18 International Business Machines Corporation Data processing system, method, and product for automatically performing timing checks on a memory cell using a static timing tool
US6879530B2 (en) * 2002-07-18 2005-04-12 Micron Technology, Inc. Apparatus for dynamically repairing a semiconductor memory
US7017094B2 (en) 2002-11-26 2006-03-21 International Business Machines Corporation Performance built-in self test system for a device and a method of use
US7734966B1 (en) 2002-12-26 2010-06-08 Marvell International Ltd. Method and system for memory testing and test data reporting during memory testing
JP2006252267A (ja) * 2005-03-11 2006-09-21 Oki Electric Ind Co Ltd システム検証用回路
US20070050668A1 (en) * 2005-09-01 2007-03-01 Micron Technology, Inc. Test mode to force generation of all possible correction codes in an ECC memory
WO2009019636A2 (en) * 2007-08-07 2009-02-12 Nxp B.V. A device for and a method of modelling a physical structure
US8726114B1 (en) * 2012-11-09 2014-05-13 Oracle International Corporation Testing of SRAMS
WO2016118216A2 (en) 2014-11-06 2016-07-28 Intertrust Technologies Corporation Secure application distribution systems and methods
KR20210101799A (ko) * 2020-02-11 2021-08-19 삼성전자주식회사 메모리 테스트 장치 및 테스트 방법
CN115389911B (zh) * 2022-08-25 2023-04-14 北京物芯科技有限责任公司 芯片调度器故障判断方法、装置、电子设备及存储介质

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3831148A (en) * 1973-01-02 1974-08-20 Honeywell Inf Systems Nonexecute test apparatus
IT1047437B (it) 1975-10-08 1980-09-10 Cselt Centro Studi Lab Telecom Procedimento e dispositivo per il controllo in linea di memorie logiche sequenziali operanti a divisione di tempo
US5329471A (en) * 1987-06-02 1994-07-12 Texas Instruments Incorporated Emulation devices, systems and methods utilizing state machines
US5557619A (en) * 1994-04-04 1996-09-17 International Business Machines Corporation Integrated circuits with a processor-based array built-in self test circuit
KR100191143B1 (ko) 1994-08-19 1999-06-15 오우라 히로시 고속패턴 발생기
US5742840A (en) * 1995-08-16 1998-04-21 Microunity Systems Engineering, Inc. General purpose, multiple precision parallel operation, programmable media processor
JPH1069799A (ja) * 1996-04-30 1998-03-10 Texas Instr Inc <Ti> 集積回路メモリ・デバイス用組込み自己テスト装置
US6061817A (en) * 1996-06-10 2000-05-09 Cypress Semiconductor Corp. Method and apparatus for generating test pattern for sequence detection
US5748640A (en) * 1996-09-12 1998-05-05 Advanced Micro Devices Technique for incorporating a built-in self-test (BIST) of a DRAM block with existing functional test vectors for a microprocessor
US5883905A (en) 1997-02-18 1999-03-16 Schlumberger Technologies, Inc. Pattern generator with extended register programming
US5961653A (en) * 1997-02-19 1999-10-05 International Business Machines Corporation Processor based BIST for an embedded memory
US6122760A (en) * 1998-08-25 2000-09-19 International Business Machines Corporation Burn in technique for chips containing different types of IC circuitry
US6128749A (en) * 1998-11-03 2000-10-03 Intel Corporation Cross-clock domain data transfer method and apparatus

Also Published As

Publication number Publication date
DE69902221D1 (de) 2002-08-29
US6351837B1 (en) 2002-02-26
EP1031994B1 (de) 2002-07-24
EP1031994A1 (de) 2000-08-30

Similar Documents

Publication Publication Date Title
DE69902221T2 (de) Speicherschaltungen mit eingebautem Selbsttest
WO2002001719A3 (en) Method and apparatus for testing high performance circuits
JPS647400A (en) Ic tester
EP1370880A4 (de) Mehrfacherfassungs-dft-system für integrierte schaltungen auf scan-basis
JPS5794987A (en) Semiconductor storage device
KR870002582A (ko) 테스트 패턴 발생회로를 갖는 반도체 기억장치
KR930022383A (ko) 메모리칩의 리프레시 어드레스 테스트 회로
US6181616B1 (en) Circuits and systems for realigning data output by semiconductor testers to packet-based devices under test
KR920020524A (ko) Lsi의 시험방법 및 lsi
JP3663082B2 (ja) ダブルデータレート同期式dram集積回路装置
KR910018812A (ko) 다중 주파수 회로용 스캔 검사 회로
EP1168369A3 (de) Synchrone Halbleiterspeichervorrichtung
DE69901534D1 (de) Speicherschaltung mit eingebautem Selbsttest
US20020071334A1 (en) Testing of high speed DDR interface using single clock edge triggered tester data
DE69936277D1 (de) Synchron-Halbleiterspeichervorrichtung
KR970051415A (ko) 반도체 메모리 장치의 병합 데이타 출력 모드 선택 방법
KR100587264B1 (ko) 주문형 반도체 장치의 내부 메모리 및 내부 메모리 테스트 방법
Kay et al. Controllable LFSR for BIST
JPH07140207A (ja) 半導体装置及びその試験方法
DE69229160T2 (de) Prüfmustererzeugungsverfahren für Abtastschaltung
US6518793B2 (en) Embedding of dynamic circuits in a static environment
JPS58166275A (ja) 集積回路装置
JP2000090693A (ja) メモリ試験装置
TW428100B (en) Built-in self-test circuit and test method of memory
JP2003004809A (ja) 半導体集積回路及び高速テストシステム

Legal Events

Date Code Title Description
8364 No opposition during term of opposition