DE69831152T2 - Verfahren und einrichtung zur einstellung der plasmavorspannungsquelle bei einer bipolaren elektrostatischen halteplatte - Google Patents

Verfahren und einrichtung zur einstellung der plasmavorspannungsquelle bei einer bipolaren elektrostatischen halteplatte Download PDF

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Publication number
DE69831152T2
DE69831152T2 DE69831152T DE69831152T DE69831152T2 DE 69831152 T2 DE69831152 T2 DE 69831152T2 DE 69831152 T DE69831152 T DE 69831152T DE 69831152 T DE69831152 T DE 69831152T DE 69831152 T2 DE69831152 T2 DE 69831152T2
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DE
Germany
Prior art keywords
output
voltage
resistor
power supply
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69831152T
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German (de)
English (en)
Other versions
DE69831152D1 (de
Inventor
M. Albert LAMBSON
Rick Caple
H. Eric LENZ
M. Laura BRAUN
Ricky Marsh
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Lam Research Corp
Original Assignee
Lam Research Corp
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Publication date
Application filed by Lam Research Corp filed Critical Lam Research Corp
Publication of DE69831152D1 publication Critical patent/DE69831152D1/de
Application granted granted Critical
Publication of DE69831152T2 publication Critical patent/DE69831152T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T279/00—Chucks or sockets
    • Y10T279/23—Chucks or sockets with magnetic or electrostatic means

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Jigs For Machine Tools (AREA)
DE69831152T 1997-06-27 1998-06-24 Verfahren und einrichtung zur einstellung der plasmavorspannungsquelle bei einer bipolaren elektrostatischen halteplatte Expired - Lifetime DE69831152T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US883068 1997-06-27
US08/883,068 US5933314A (en) 1997-06-27 1997-06-27 Method and an apparatus for offsetting plasma bias voltage in bi-polar electro-static chucks
PCT/US1998/013159 WO1999000889A1 (en) 1997-06-27 1998-06-24 A method and an apparatus for offsetting plasma bias voltage in bipolar electrostatic chucks

Publications (2)

Publication Number Publication Date
DE69831152D1 DE69831152D1 (de) 2005-09-15
DE69831152T2 true DE69831152T2 (de) 2006-04-20

Family

ID=25381907

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69831152T Expired - Lifetime DE69831152T2 (de) 1997-06-27 1998-06-24 Verfahren und einrichtung zur einstellung der plasmavorspannungsquelle bei einer bipolaren elektrostatischen halteplatte

Country Status (8)

Country Link
US (1) US5933314A (enExample)
EP (1) EP0992106B1 (enExample)
JP (1) JP4299370B2 (enExample)
KR (1) KR100543319B1 (enExample)
AT (1) ATE301880T1 (enExample)
DE (1) DE69831152T2 (enExample)
TW (1) TW383417B (enExample)
WO (1) WO1999000889A1 (enExample)

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US6361645B1 (en) * 1998-10-08 2002-03-26 Lam Research Corporation Method and device for compensating wafer bias in a plasma processing chamber
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US6898065B2 (en) * 2002-07-26 2005-05-24 Brad Mays Method and apparatus for operating an electrostatic chuck in a semiconductor substrate processing system
KR100545169B1 (ko) * 2003-09-03 2006-01-24 동부아남반도체 주식회사 반도체 제조 설비의 정전척 및 이를 이용한 웨이퍼 척킹방법
US7264676B2 (en) * 2003-09-11 2007-09-04 United Microelectronics Corp. Plasma apparatus and method capable of adaptive impedance matching
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JP2007048986A (ja) * 2005-08-10 2007-02-22 Hitachi High-Technologies Corp プラズマ処理装置およびプラズマ処理方法
US20090302863A1 (en) * 2006-03-08 2009-12-10 Marcus Schinkel Device for Simulating the Symmetrical and Asymmetrical Impedance of an Asynchronous Motor
JP4802018B2 (ja) * 2006-03-09 2011-10-26 筑波精工株式会社 静電保持装置及びそれを用いた真空環境装置並びにアライメント装置又は貼り合わせ装置
KR101213103B1 (ko) * 2006-06-30 2013-01-09 엘지디스플레이 주식회사 합착 장치 및 이를 이용한 전계발광소자의 제조방법
US7768766B2 (en) * 2007-06-01 2010-08-03 Lam Research Corporation Plasma processing system ESC high voltage control
US8043470B2 (en) * 2007-11-21 2011-10-25 Lam Research Corporation Electrode/probe assemblies and plasma processing chambers incorporating the same
US7558045B1 (en) * 2008-03-20 2009-07-07 Novellus Systems, Inc. Electrostatic chuck assembly with capacitive sense feature, and related operating method
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US8901935B2 (en) * 2009-11-19 2014-12-02 Lam Research Corporation Methods and apparatus for detecting the confinement state of plasma in a plasma processing system
JP2011187881A (ja) * 2010-03-11 2011-09-22 Hitachi High-Technologies Corp プラズマ処理装置および方法
US9076831B2 (en) * 2011-11-04 2015-07-07 Lam Research Corporation Substrate clamping system and method for operating the same
US9017513B2 (en) 2012-11-07 2015-04-28 Lam Research Corporation Plasma monitoring probe assembly and processing chamber incorporating the same
US9101038B2 (en) 2013-12-20 2015-08-04 Lam Research Corporation Electrostatic chuck including declamping electrode and method of declamping
CN106796909A (zh) 2014-06-17 2017-05-31 瑞士艾发科技 具有射频分路的静电卡盘
US10002782B2 (en) 2014-10-17 2018-06-19 Lam Research Corporation ESC assembly including an electrically conductive gasket for uniform RF power delivery therethrough
JP6407694B2 (ja) * 2014-12-16 2018-10-17 株式会社日立ハイテクノロジーズ プラズマ処理装置
CN106298615B (zh) * 2015-05-27 2019-03-12 北京北方华创微电子装备有限公司 静电卡盘、反应腔室及半导体加工设备
JP6708358B2 (ja) * 2016-08-03 2020-06-10 株式会社日立ハイテク プラズマ処理装置及び試料の離脱方法
US10636630B2 (en) * 2017-07-27 2020-04-28 Applied Materials, Inc. Processing chamber and method with thermal control
US10510575B2 (en) 2017-09-20 2019-12-17 Applied Materials, Inc. Substrate support with multiple embedded electrodes
US10555412B2 (en) 2018-05-10 2020-02-04 Applied Materials, Inc. Method of controlling ion energy distribution using a pulse generator with a current-return output stage
US20200048770A1 (en) * 2018-08-07 2020-02-13 Lam Research Corporation Chemical vapor deposition tool for preventing or suppressing arcing
US11476145B2 (en) * 2018-11-20 2022-10-18 Applied Materials, Inc. Automatic ESC bias compensation when using pulsed DC bias
JP7451540B2 (ja) 2019-01-22 2024-03-18 アプライド マテリアルズ インコーポレイテッド パルス状電圧波形を制御するためのフィードバックループ
US11508554B2 (en) 2019-01-24 2022-11-22 Applied Materials, Inc. High voltage filter assembly
TWI811650B (zh) * 2020-03-20 2023-08-11 荷蘭商Ａｓｍｌ荷蘭公司 靜電吸盤控制系統及其相關非暫時性電腦可讀媒體
US11462389B2 (en) 2020-07-31 2022-10-04 Applied Materials, Inc. Pulsed-voltage hardware assembly for use in a plasma processing system
US11776835B2 (en) * 2020-09-29 2023-10-03 Applied Materials, Inc. Power supply signal conditioning for an electrostatic chuck
US11594440B2 (en) * 2020-10-21 2023-02-28 Applied Materials, Inc. Real time bias detection and correction for electrostatic chuck
US11901157B2 (en) 2020-11-16 2024-02-13 Applied Materials, Inc. Apparatus and methods for controlling ion energy distribution
US11798790B2 (en) 2020-11-16 2023-10-24 Applied Materials, Inc. Apparatus and methods for controlling ion energy distribution
CN115250648B (zh) 2021-02-25 2025-11-11 株式会社日立高新技术 等离子处理装置
US11495470B1 (en) 2021-04-16 2022-11-08 Applied Materials, Inc. Method of enhancing etching selectivity using a pulsed plasma
US11791138B2 (en) 2021-05-12 2023-10-17 Applied Materials, Inc. Automatic electrostatic chuck bias compensation during plasma processing
US11948780B2 (en) 2021-05-12 2024-04-02 Applied Materials, Inc. Automatic electrostatic chuck bias compensation during plasma processing
US11967483B2 (en) 2021-06-02 2024-04-23 Applied Materials, Inc. Plasma excitation with ion energy control
US20220399185A1 (en) 2021-06-09 2022-12-15 Applied Materials, Inc. Plasma chamber and chamber component cleaning methods
US12148595B2 (en) 2021-06-09 2024-11-19 Applied Materials, Inc. Plasma uniformity control in pulsed DC plasma chamber
US11810760B2 (en) 2021-06-16 2023-11-07 Applied Materials, Inc. Apparatus and method of ion current compensation
US11569066B2 (en) 2021-06-23 2023-01-31 Applied Materials, Inc. Pulsed voltage source for plasma processing applications
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US12106938B2 (en) 2021-09-14 2024-10-01 Applied Materials, Inc. Distortion current mitigation in a radio frequency plasma processing chamber
US11694876B2 (en) 2021-12-08 2023-07-04 Applied Materials, Inc. Apparatus and method for delivering a plurality of waveform signals during plasma processing
US11972924B2 (en) 2022-06-08 2024-04-30 Applied Materials, Inc. Pulsed voltage source for plasma processing applications
US12315732B2 (en) 2022-06-10 2025-05-27 Applied Materials, Inc. Method and apparatus for etching a semiconductor substrate in a plasma etch chamber
US12272524B2 (en) 2022-09-19 2025-04-08 Applied Materials, Inc. Wideband variable impedance load for high volume manufacturing qualification and on-site diagnostics
US12111341B2 (en) 2022-10-05 2024-10-08 Applied Materials, Inc. In-situ electric field detection method and apparatus

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Also Published As

Publication number Publication date
EP0992106B1 (en) 2005-08-10
DE69831152D1 (de) 2005-09-15
JP2002507326A (ja) 2002-03-05
KR20010014170A (ko) 2001-02-26
ATE301880T1 (de) 2005-08-15
KR100543319B1 (ko) 2006-01-20
TW383417B (en) 2000-03-01
EP0992106A1 (en) 2000-04-12
WO1999000889A1 (en) 1999-01-07
US5933314A (en) 1999-08-03
JP4299370B2 (ja) 2009-07-22

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