DE69827314D1 - Abfühlverstärker - Google Patents
AbfühlverstärkerInfo
- Publication number
- DE69827314D1 DE69827314D1 DE69827314T DE69827314T DE69827314D1 DE 69827314 D1 DE69827314 D1 DE 69827314D1 DE 69827314 T DE69827314 T DE 69827314T DE 69827314 T DE69827314 T DE 69827314T DE 69827314 D1 DE69827314 D1 DE 69827314D1
- Authority
- DE
- Germany
- Prior art keywords
- sense amplifier
- amplifier
- sense
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
- G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
- G11C11/419—Read-write [R-W] circuits
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9060445A JPH10255480A (ja) | 1997-03-14 | 1997-03-14 | センスアンプ |
| JP6044597 | 1997-03-14 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE69827314D1 true DE69827314D1 (de) | 2004-12-09 |
| DE69827314T2 DE69827314T2 (de) | 2005-11-24 |
Family
ID=13142493
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE69827314T Expired - Lifetime DE69827314T2 (de) | 1997-03-14 | 1998-03-12 | Abfühlverstärker |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US6081138A (de) |
| EP (1) | EP0865043B1 (de) |
| JP (1) | JPH10255480A (de) |
| KR (1) | KR100344865B1 (de) |
| CN (1) | CN1129909C (de) |
| DE (1) | DE69827314T2 (de) |
| TW (1) | TW365006B (de) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100322539B1 (ko) * | 1999-07-10 | 2002-03-18 | 윤종용 | 반도체 집적회로의 감지 증폭장치 |
| US6288575B1 (en) * | 1999-08-24 | 2001-09-11 | Micron Technology, Inc. | Pseudo-differential current sense amplifier with hysteresis |
| KR100370240B1 (ko) * | 2000-10-31 | 2003-02-05 | 삼성전자 주식회사 | 안정도와 증폭도 개선을 위한 반도체 메모리 장치의 전류감지 증폭 회로 |
| DE10260602B3 (de) * | 2002-12-23 | 2004-08-12 | Infineon Technologies Ag | Erfassungsverstärkervorrichtung für niedrige Spannungen |
| KR100558571B1 (ko) * | 2004-03-03 | 2006-03-13 | 삼성전자주식회사 | 반도체 메모리 장치의 전류 센스앰프 회로 |
| KR100666488B1 (ko) | 2005-06-17 | 2007-01-09 | 삼성전자주식회사 | 로컬 센스 증폭기 및 그것을 구비한 반도체 메모리 장치 |
| US8760953B2 (en) | 2010-10-01 | 2014-06-24 | Qualcomm Incorporated | Sense amplifier with selectively powered inverter |
| CN103077741B (zh) * | 2012-12-31 | 2015-12-09 | 东南大学 | 一种低电压工作的sram的存储单元电路 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0438793A (ja) * | 1990-06-04 | 1992-02-07 | Toshiba Corp | データ転送制御回路およびこれを用いたダイナミック型半導体記憶装置 |
| US5304874A (en) * | 1991-05-31 | 1994-04-19 | Thunderbird Technologies, Inc. | Differential latching inverter and random access memory using same |
| JP3037077B2 (ja) * | 1994-08-30 | 2000-04-24 | 株式会社 沖マイクロデザイン | 半導体集積回路装置 |
| US5485430A (en) * | 1992-12-22 | 1996-01-16 | Sgs-Thomson Microelectronics, Inc. | Multiple clocked dynamic sense amplifier |
| JPH07211081A (ja) * | 1994-01-06 | 1995-08-11 | Mitsubishi Electric Corp | 半導体記憶装置 |
| KR0142952B1 (ko) * | 1995-03-31 | 1998-08-17 | 김광호 | 반도체 메모리장치의 감지증폭기 회로 |
| DE69526336D1 (de) * | 1995-04-28 | 2002-05-16 | St Microelectronics Srl | Leseschaltung für Speicherzellen mit niedriger Versorgungsspannung |
| GB9509817D0 (en) * | 1995-05-11 | 1995-07-05 | Xilinx Inc | Sense amplifier for reading logic device |
| US5568438A (en) * | 1995-07-18 | 1996-10-22 | Analog Devices, Inc. | Sense amplifier with offset autonulling |
| US5646905A (en) * | 1996-04-30 | 1997-07-08 | Sun Microsystems, Inc. | Self-clocking sense amplifier optimized for input signals close to VDD |
| US5668765A (en) * | 1996-06-06 | 1997-09-16 | Philips Electronics North America Corporation | Charge transfer sense amplifier |
-
1997
- 1997-03-14 JP JP9060445A patent/JPH10255480A/ja not_active Withdrawn
-
1998
- 1998-03-10 US US09/037,425 patent/US6081138A/en not_active Expired - Fee Related
- 1998-03-11 KR KR1019980008041A patent/KR100344865B1/ko not_active IP Right Cessation
- 1998-03-12 DE DE69827314T patent/DE69827314T2/de not_active Expired - Lifetime
- 1998-03-12 TW TW087103643A patent/TW365006B/zh not_active IP Right Cessation
- 1998-03-12 EP EP98104519A patent/EP0865043B1/de not_active Expired - Lifetime
- 1998-03-13 CN CN98105573A patent/CN1129909C/zh not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| DE69827314T2 (de) | 2005-11-24 |
| CN1129909C (zh) | 2003-12-03 |
| EP0865043A3 (de) | 1999-12-01 |
| US6081138A (en) | 2000-06-27 |
| EP0865043A2 (de) | 1998-09-16 |
| CN1198572A (zh) | 1998-11-11 |
| JPH10255480A (ja) | 1998-09-25 |
| TW365006B (en) | 1999-07-21 |
| KR19980080117A (ko) | 1998-11-25 |
| KR100344865B1 (ko) | 2002-09-18 |
| EP0865043B1 (de) | 2004-11-03 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition | ||
| 8327 | Change in the person/name/address of the patent owner |
Owner name: OKI SEMICONDUCTOR CO.,LTD., TOKYO, JP |