DE69820950D1 - Vorrichtung zur chemischen Abscheidung aus der Dampfphase und Verfahren zu deren Reinigung - Google Patents

Vorrichtung zur chemischen Abscheidung aus der Dampfphase und Verfahren zu deren Reinigung

Info

Publication number
DE69820950D1
DE69820950D1 DE69820950T DE69820950T DE69820950D1 DE 69820950 D1 DE69820950 D1 DE 69820950D1 DE 69820950 T DE69820950 T DE 69820950T DE 69820950 T DE69820950 T DE 69820950T DE 69820950 D1 DE69820950 D1 DE 69820950D1
Authority
DE
Germany
Prior art keywords
cleaning
vapor deposition
chemical vapor
deposition apparatus
chemical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69820950T
Other languages
English (en)
Other versions
DE69820950T2 (de
Inventor
Hidenao Suzuki
Tsutomu Nakada
Masahito Abe
Masao Saitoh
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ebara Corp
Original Assignee
Ebara Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ebara Corp filed Critical Ebara Corp
Publication of DE69820950D1 publication Critical patent/DE69820950D1/de
Application granted granted Critical
Publication of DE69820950T2 publication Critical patent/DE69820950T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H01L21/205—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10S156/916—Differential etching apparatus including chamber cleaning means or shield for preventing deposits
DE69820950T 1997-10-15 1998-10-13 Vorrichtung zur chemischen Abscheidung aus der Dampfphase und Verfahren zu deren Reinigung Expired - Fee Related DE69820950T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP29776297A JP3398027B2 (ja) 1997-10-15 1997-10-15 気相成長装置及びその洗浄方法

Publications (2)

Publication Number Publication Date
DE69820950D1 true DE69820950D1 (de) 2004-02-12
DE69820950T2 DE69820950T2 (de) 2004-10-21

Family

ID=17850853

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69820950T Expired - Fee Related DE69820950T2 (de) 1997-10-15 1998-10-13 Vorrichtung zur chemischen Abscheidung aus der Dampfphase und Verfahren zu deren Reinigung

Country Status (6)

Country Link
US (1) US6312569B1 (de)
EP (1) EP0909837B1 (de)
JP (1) JP3398027B2 (de)
KR (1) KR100562200B1 (de)
DE (1) DE69820950T2 (de)
TW (1) TW510923B (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6352623B1 (en) * 1999-12-17 2002-03-05 Nutool, Inc. Vertically configured chamber used for multiple processes
JP4730572B2 (ja) * 2000-08-21 2011-07-20 株式会社アルバック プラズマ成膜装置及びそのクリーニング方法
US7247561B2 (en) * 2003-12-11 2007-07-24 Micron Technology, Inc. Method of removing residual contaminants from an environment
KR100711916B1 (ko) * 2005-12-28 2007-04-27 동부일렉트로닉스 주식회사 증착설비 및 이를 이용한 증착방법
JP5123820B2 (ja) * 2008-10-27 2013-01-23 東京エレクトロン株式会社 基板処理装置の真空排気方法及び基板処理装置
DE102011080202A1 (de) * 2011-08-01 2013-02-07 Gebr. Schmid Gmbh Vorrichtung und Verfahren zur Herstellung von dünnen Schichten
US9309603B2 (en) 2011-09-14 2016-04-12 Applied Materials, Inc Component cleaning in a metal plating apparatus
US9352355B1 (en) * 2012-04-15 2016-05-31 David P. Jackson Particle-plasma ablation process
CN107012444B (zh) * 2017-05-05 2023-09-15 宁波工程学院 一种化学气相沉积镀制金刚石膜的设备的吹气装置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63149380A (ja) * 1986-12-10 1988-06-22 Nec Corp Ｃｖｄ装置
KR0145302B1 (ko) * 1988-04-28 1998-08-17 카자마 젠쥬 얇은 막의 형성방법
JPH029115A (ja) * 1988-06-28 1990-01-12 Mitsubishi Electric Corp 半導体製造装置
US5298720A (en) * 1990-04-25 1994-03-29 International Business Machines Corporation Method and apparatus for contamination control in processing apparatus containing voltage driven electrode
EP0574075B1 (de) * 1992-06-09 1996-02-07 Koninklijke Philips Electronics N.V. Verfahren zur Herstellung eines Halbleiterbauelementes durch CVD
US5252178A (en) * 1992-06-24 1993-10-12 Texas Instruments Incorporated Multi-zone plasma processing method and apparatus
JP3148004B2 (ja) * 1992-07-06 2001-03-19 株式会社東芝 光ｃｖｄ装置及びこれを用いた半導体装置の製造方法
US5403459A (en) * 1993-05-17 1995-04-04 Applied Materials, Inc. Cleaning of a PVD chamber containing a collimator
JP2659919B2 (ja) * 1994-01-13 1997-09-30 インターナショナル・ビジネス・マシーンズ・コーポレイション プラズマの不均一性を補正するプラズマ装置
JPH08298244A (ja) * 1995-04-27 1996-11-12 Nec Yamagata Ltd スパッタ装置
US5904800A (en) * 1997-02-03 1999-05-18 Motorola, Inc. Semiconductor wafer processing chamber for reducing particles deposited onto the semiconductor wafer
JP3470557B2 (ja) * 1997-06-27 2003-11-25 株式会社日立製作所 プラズマ処理装置

Also Published As

Publication number Publication date
EP0909837A2 (de) 1999-04-21
KR19990037106A (ko) 1999-05-25
DE69820950T2 (de) 2004-10-21
EP0909837B1 (de) 2004-01-07
TW510923B (en) 2002-11-21
KR100562200B1 (ko) 2006-06-28
EP0909837A3 (de) 1999-05-19
JP3398027B2 (ja) 2003-04-21
JPH11121445A (ja) 1999-04-30
US6312569B1 (en) 2001-11-06

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee