DE69815781D1 - Halbleiter-Dehnungs-Sensor, Vefahren zu dessen Herstellung und Rastersondenmikroskop - Google Patents

Halbleiter-Dehnungs-Sensor, Vefahren zu dessen Herstellung und Rastersondenmikroskop

Info

Publication number
DE69815781D1
DE69815781D1 DE69815781T DE69815781T DE69815781D1 DE 69815781 D1 DE69815781 D1 DE 69815781D1 DE 69815781 T DE69815781 T DE 69815781T DE 69815781 T DE69815781 T DE 69815781T DE 69815781 D1 DE69815781 D1 DE 69815781D1
Authority
DE
Germany
Prior art keywords
production
strain sensor
scanning probe
probe microscope
semiconductor strain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69815781T
Other languages
English (en)
Other versions
DE69815781T2 (de
Inventor
Hiroshi Takahashi
Mobuhiro Shimizu
Yoshiharu Shirakawabe
Michel Despont
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi High Tech Science Corp
International Business Machines Corp
Original Assignee
Seiko Instruments Inc
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Instruments Inc, International Business Machines Corp filed Critical Seiko Instruments Inc
Application granted granted Critical
Publication of DE69815781D1 publication Critical patent/DE69815781D1/de
Publication of DE69815781T2 publication Critical patent/DE69815781T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
    • G01Q20/00—Monitoring the movement or position of the probe
    • G01Q20/04—Self-detecting probes, i.e. wherein the probe itself generates a signal representative of its position, e.g. piezoelectric gauge
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B7/00—Measuring arrangements characterised by the use of electric or magnetic techniques
    • G01B7/16—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring the deformation in a solid, e.g. by resistance strain gauge
    • G01B7/18—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring the deformation in a solid, e.g. by resistance strain gauge using change in resistance

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Radiology & Medical Imaging (AREA)
  • Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
  • Length Measuring Devices With Unspecified Measuring Means (AREA)
  • Pressure Sensors (AREA)
DE69815781T 1997-09-30 1998-09-30 Halbleiter-Dehnungs-Sensor, Vefahren zu dessen Herstellung und Rastersondenmikroskop Expired - Fee Related DE69815781T2 (de)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP26676097 1997-09-30
JP26676097 1997-09-30
JP3735098 1998-02-19
JP3735098 1998-02-19
JP25297298 1998-09-07
JP10252972A JPH11304825A (ja) 1997-09-30 1998-09-07 半導体歪センサおよびその製造方法ならびに走査型プローブ顕微鏡

Publications (2)

Publication Number Publication Date
DE69815781D1 true DE69815781D1 (de) 2003-07-31
DE69815781T2 DE69815781T2 (de) 2004-02-12

Family

ID=27289437

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69815781T Expired - Fee Related DE69815781T2 (de) 1997-09-30 1998-09-30 Halbleiter-Dehnungs-Sensor, Vefahren zu dessen Herstellung und Rastersondenmikroskop

Country Status (3)

Country Link
EP (1) EP0905475B1 (de)
JP (1) JPH11304825A (de)
DE (1) DE69815781T2 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6479892B1 (en) * 2000-10-31 2002-11-12 Motorola, Inc. Enhanced probe for gathering data from semiconductor devices
US20030062193A1 (en) * 2001-09-07 2003-04-03 Jacob Thaysen Flexible structure with integrated sensor/actuator
EP1550850A1 (de) * 2003-12-29 2005-07-06 STMicroelectronics S.r.l. Lese-/-Schreib-Gerät für Massenspeichergerät und Lese-/-Schreibverfahren dafür
JP2018044811A (ja) * 2016-09-13 2018-03-22 株式会社村田製作所 ピエゾ抵抗型センサ
CN115541071B (zh) 2022-12-01 2023-06-16 无锡芯感智半导体有限公司 双极型晶体管式mems压力传感器及其制备方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4422063A (en) * 1982-04-01 1983-12-20 Pitney Bowes Inc. Semiconductor strain gauge
EP0491973B1 (de) * 1990-12-21 1995-11-02 International Business Machines Corporation Integriertes Rastertunnelmikroskop mit pneumatischer und elektrostatischer Steuerung und Verfahren zum Herstellen desselben
JPH05196458A (ja) * 1991-01-04 1993-08-06 Univ Leland Stanford Jr 原子力顕微鏡用ピエゾ抵抗性片持ばり構造体
US5444244A (en) * 1993-06-03 1995-08-22 Park Scientific Instruments Corporation Piezoresistive cantilever with integral tip for scanning probe microscope
US5489774A (en) * 1994-09-20 1996-02-06 The Board Of Trustees Of The Leland Stanford University Combined atomic force and near field scanning optical microscope with photosensitive cantilever
US5632841A (en) * 1995-04-04 1997-05-27 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Thin layer composite unimorph ferroelectric driver and sensor
WO1997009584A1 (en) * 1995-09-01 1997-03-13 International Business Machines Corporation Cantilever with integrated deflection sensor
DE69722702T2 (de) * 1996-04-18 2004-04-29 Seiko Instruments Inc. Halbleiterdehnungssensoren mit pn Übergang, Rastersondenmikroskop

Also Published As

Publication number Publication date
DE69815781T2 (de) 2004-02-12
EP0905475A1 (de) 1999-03-31
EP0905475B1 (de) 2003-06-25
JPH11304825A (ja) 1999-11-05

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: SII NANO TECHNOLOGY INC., CHIBA, JP

Owner name: IBM CORP., ARMONK, N.Y., US

8339 Ceased/non-payment of the annual fee