DE69813689T2 - Verfahren und gerät zur laufzeitkorrektur von nahwirkungseffekten in der mustererzeugung - Google Patents

Verfahren und gerät zur laufzeitkorrektur von nahwirkungseffekten in der mustererzeugung

Info

Publication number
DE69813689T2
DE69813689T2 DE69813689T DE69813689T DE69813689T2 DE 69813689 T2 DE69813689 T2 DE 69813689T2 DE 69813689 T DE69813689 T DE 69813689T DE 69813689 T DE69813689 T DE 69813689T DE 69813689 T2 DE69813689 T2 DE 69813689T2
Authority
DE
Germany
Prior art keywords
correcting
pattern production
running effect
sewing
effects
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69813689T
Other languages
English (en)
Other versions
DE69813689D1 (de
Inventor
H Veneklasen
Robert Innes
Sergey Babin
David Trost
Jeffrey Varner
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of DE69813689D1 publication Critical patent/DE69813689D1/de
Application granted granted Critical
Publication of DE69813689T2 publication Critical patent/DE69813689T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/302—Controlling tubes by external information, e.g. programme control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/302—Controlling tubes by external information, e.g. programme control
    • H01J37/3023—Programme control
    • H01J37/3026—Patterning strategy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31769—Proximity effect correction
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/143—Electron beam

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electron Beam Exposure (AREA)
DE69813689T 1997-01-28 1998-01-23 Verfahren und gerät zur laufzeitkorrektur von nahwirkungseffekten in der mustererzeugung Expired - Fee Related DE69813689T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/789,246 US5847959A (en) 1997-01-28 1997-01-28 Method and apparatus for run-time correction of proximity effects in pattern generation
PCT/US1998/000904 WO1998033197A1 (en) 1997-01-28 1998-01-23 Method and apparatus for run-time correction of proximity effects in pattern generation

Publications (2)

Publication Number Publication Date
DE69813689D1 DE69813689D1 (de) 2003-05-28
DE69813689T2 true DE69813689T2 (de) 2003-12-18

Family

ID=25147038

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69813689T Expired - Fee Related DE69813689T2 (de) 1997-01-28 1998-01-23 Verfahren und gerät zur laufzeitkorrektur von nahwirkungseffekten in der mustererzeugung

Country Status (7)

Country Link
US (1) US5847959A (de)
EP (1) EP0895652B1 (de)
JP (1) JP4364310B2 (de)
KR (1) KR100393129B1 (de)
CA (1) CA2249573A1 (de)
DE (1) DE69813689T2 (de)
WO (1) WO1998033197A1 (de)

Families Citing this family (108)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3999301B2 (ja) * 1997-03-07 2007-10-31 富士通株式会社 露光データ作成方法
US6453452B1 (en) 1997-12-12 2002-09-17 Numerical Technologies, Inc. Method and apparatus for data hierarchy maintenance in a system for mask description
US6370679B1 (en) 1997-09-17 2002-04-09 Numerical Technologies, Inc. Data hierarchy layout correction and verification method and apparatus
US6578188B1 (en) * 1997-09-17 2003-06-10 Numerical Technologies, Inc. Method and apparatus for a network-based mask defect printability analysis system
US6757645B2 (en) 1997-09-17 2004-06-29 Numerical Technologies, Inc. Visual inspection and verification system
US7617474B2 (en) * 1997-09-17 2009-11-10 Synopsys, Inc. System and method for providing defect printability analysis of photolithographic masks with job-based automation
US6470489B1 (en) 1997-09-17 2002-10-22 Numerical Technologies, Inc. Design rule checking system and method
US7093229B2 (en) * 1997-09-17 2006-08-15 Synopsys, Inc. System and method for providing defect printability analysis of photolithographic masks with job-based automation
US6081658A (en) * 1997-12-31 2000-06-27 Avant! Corporation Proximity correction system for wafer lithography
US6035113A (en) * 1998-01-05 2000-03-07 International Business Machines Corporation Electron beam proximity correction method for hierarchical design data
SE9800665D0 (sv) * 1998-03-02 1998-03-02 Micronic Laser Systems Ab Improved method for projection printing using a micromirror SLM
US6360134B1 (en) 1998-07-20 2002-03-19 Photronics, Inc. Method for creating and improved image on a photomask by negatively and positively overscanning the boundaries of an image pattern at inside corner locations
US6259106B1 (en) * 1999-01-06 2001-07-10 Etec Systems, Inc. Apparatus and method for controlling a beam shape
US6262429B1 (en) 1999-01-06 2001-07-17 Etec Systems, Inc. Raster shaped beam, electron beam exposure strategy using a two dimensional multipixel flash field
US6214496B1 (en) * 1999-03-29 2001-04-10 Infineon Technologies North America Corp. Method for reducing corner rounding in mask fabrication utilizing elliptical energy beam
AU3815200A (en) * 1999-04-01 2000-10-23 Sigma-C Gmbh Method for correcting image faults
US6424879B1 (en) * 1999-04-13 2002-07-23 Applied Materials, Inc. System and method to correct for distortion caused by bulk heating in a substrate
US6467076B1 (en) * 1999-04-30 2002-10-15 Nicolas Bailey Cobb Method and apparatus for submicron IC design
US6720565B2 (en) * 1999-06-30 2004-04-13 Applied Materials, Inc. Real-time prediction of and correction of proximity resist heating in raster scan particle beam lithography
US6373071B1 (en) * 1999-06-30 2002-04-16 Applied Materials, Inc. Real-time prediction of proximity resist heating and correction of raster scan electron beam lithography
US6521901B1 (en) * 1999-09-20 2003-02-18 Applied Materials, Inc. System to reduce heat-induced distortion of photomasks during lithography
JP2001168017A (ja) * 1999-12-13 2001-06-22 Canon Inc 荷電粒子線露光装置、荷電粒子線露光方法及び制御データの決定方法、該方法を適用したデバイスの製造方法。
JP2001168018A (ja) 1999-12-13 2001-06-22 Canon Inc 荷電粒子線露光装置、荷電粒子線露光方法及び露光補正データの決定方法、該方法を適用したデバイスの製造方法。
US6584609B1 (en) 2000-02-28 2003-06-24 Numerical Technologies, Inc. Method and apparatus for mixed-mode optical proximity correction
US6420717B1 (en) * 2000-04-11 2002-07-16 Applied Materials, Inc. Method and apparatus for real-time correction of resist heating in lithography
US6647137B1 (en) * 2000-07-10 2003-11-11 International Business Machines Corporation Characterizing kernel function in photolithography based on photoresist pattern
US6379851B1 (en) * 2000-07-31 2002-04-30 Applied Materials, Inc. Methods to predict and correct resist heating during lithography
US6523162B1 (en) 2000-08-02 2003-02-18 Numerical Technologies, Inc. General purpose shape-based layout processing scheme for IC layout modifications
GB2367228A (en) * 2000-09-21 2002-03-27 Leica Microsys Lithography Ltd Method for ascertaining the radiation dose for a layout
US6625801B1 (en) 2000-09-29 2003-09-23 Numerical Technologies, Inc. Dissection of printed edges from a fabrication layout for correcting proximity effects
US6453457B1 (en) 2000-09-29 2002-09-17 Numerical Technologies, Inc. Selection of evaluation point locations based on proximity effects model amplitudes for correcting proximity effects in a fabrication layout
US6539521B1 (en) 2000-09-29 2003-03-25 Numerical Technologies, Inc. Dissection of corners in a fabrication layout for correcting proximity effects
US6557162B1 (en) * 2000-09-29 2003-04-29 Numerical Technologies, Inc. Method for high yield reticle formation
US6792590B1 (en) 2000-09-29 2004-09-14 Numerical Technologies, Inc. Dissection of edges with projection points in a fabrication layout for correcting proximity effects
US6622288B1 (en) 2000-10-25 2003-09-16 Numerical Technologies, Inc. Conflict sensitive compaction for resolving phase-shift conflicts in layouts for phase-shifted features
US6584610B1 (en) 2000-10-25 2003-06-24 Numerical Technologies, Inc. Incrementally resolved phase-shift conflicts in layouts for phase-shifted features
US6665856B1 (en) 2000-12-01 2003-12-16 Numerical Technologies, Inc. Displacing edge segments on a fabrication layout based on proximity effects model amplitudes for correcting proximity effects
US6653026B2 (en) 2000-12-20 2003-11-25 Numerical Technologies, Inc. Structure and method of correcting proximity effects in a tri-tone attenuated phase-shifting mask
US6505327B2 (en) 2001-04-13 2003-01-07 Numerical Technologies, Inc. Generating an instance-based representation of a design hierarchy
US6789237B1 (en) * 2001-05-11 2004-09-07 Northwestern University Efficient model order reduction via multi-point moment matching
US6560766B2 (en) 2001-07-26 2003-05-06 Numerical Technologies, Inc. Method and apparatus for analyzing a layout using an instance-based representation
US6684382B2 (en) 2001-08-31 2004-01-27 Numerical Technologies, Inc. Microloading effect correction
US6735752B2 (en) 2001-09-10 2004-05-11 Numerical Technologies, Inc. Modifying a hierarchical representation of a circuit to process features created by interactions between cells
US6738958B2 (en) 2001-09-10 2004-05-18 Numerical Technologies, Inc. Modifying a hierarchical representation of a circuit to process composite gates
US6670082B2 (en) * 2001-10-09 2003-12-30 Numerical Technologies, Inc. System and method for correcting 3D effects in an alternating phase-shifting mask
US6767674B2 (en) 2001-10-26 2004-07-27 Infineon Technologies Ag Method for obtaining elliptical and rounded shapes using beam shaping
KR100435260B1 (ko) 2001-12-03 2004-06-11 삼성전자주식회사 포토리소그래피 공정의 얼라인 계측방법
US6792592B2 (en) 2002-08-30 2004-09-14 Numerical Technologies, Inc. Considering mask writer properties during the optical proximity correction process
US7172838B2 (en) * 2002-09-27 2007-02-06 Wilhelm Maurer Chromeless phase mask layout generation
JP2004128196A (ja) * 2002-10-02 2004-04-22 Hitachi High-Technologies Corp 電子線描画装置と電子線描画方法
US6872507B2 (en) 2002-11-01 2005-03-29 Taiwan Semiconductor Manufacturing Company Radiation correction method for electron beam lithography
US20090008579A1 (en) * 2003-10-07 2009-01-08 Tokyo Electron Limited Electron beam lithography apparatus and design method of patterned beam-defining aperture
US7928404B2 (en) * 2003-10-07 2011-04-19 Multibeam Corporation Variable-ratio double-deflection beam blanker
US7462848B2 (en) * 2003-10-07 2008-12-09 Multibeam Systems, Inc. Optics for generation of high current density patterned charged particle beams
JP2005183577A (ja) * 2003-12-18 2005-07-07 Sony Corp 露光装置、露光方法、および半導体装置の製造方法
US7025280B2 (en) * 2004-01-30 2006-04-11 Tokyo Electron Limited Adaptive real time control of a reticle/mask system
US7148496B2 (en) * 2004-04-13 2006-12-12 Massachusetts Institute Of Technology System and method for proximity effect correction in imaging systems
US7529421B2 (en) * 2004-07-01 2009-05-05 Applied Materials, Inc. Optical proximity correction in raster scan printing based on corner matching templates
US7207029B2 (en) * 2004-09-29 2007-04-17 Synopsys, Inc. Calculating etch proximity-correction using image-precision techniques
US20060183025A1 (en) * 2005-02-14 2006-08-17 Micron Technology, Inc. Methods of forming mask patterns, methods of correcting feature dimension variation, microlithography methods, recording medium and electron beam exposure system
JP2007110087A (ja) 2005-09-13 2007-04-26 Hitachi High-Technologies Corp 電子線装置及び電子線照射パターン生成方法
US7650588B2 (en) * 2005-09-26 2010-01-19 Micronic Laser Systems Ab Methods and systems for pattern generation based on multiple forms of design data
US7265361B2 (en) * 2005-09-28 2007-09-04 Applied Materials, Inc. Beam blanker driver system and method
US7417233B2 (en) * 2005-09-28 2008-08-26 Applied Materials, Inc. Beam exposure correction system and method
US7498591B2 (en) * 2005-09-30 2009-03-03 Applied Materials, Inc. Critical dimension effects correction in raster pattern generator
US7476879B2 (en) * 2005-09-30 2009-01-13 Applied Materials, Inc. Placement effects correction in raster pattern generator
JP4857963B2 (ja) * 2006-07-05 2012-01-18 ソニー株式会社 パターン抽出方法，パターン抽出装置および半導体装置の製造方法
US7897008B2 (en) * 2006-10-27 2011-03-01 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus and method for regional plasma control
US7902528B2 (en) * 2006-11-21 2011-03-08 Cadence Design Systems, Inc. Method and system for proximity effect and dose correction for a particle beam writing device
US7824828B2 (en) * 2007-02-22 2010-11-02 Cadence Design Systems, Inc. Method and system for improvement of dose correction for particle beam writers
US8387674B2 (en) 2007-11-30 2013-03-05 Taiwan Semiconductor Manufacturing Comany, Ltd. Chip on wafer bonder
CN102460633B (zh) * 2009-05-20 2014-12-17 迈普尔平版印刷Ip有限公司 用于光刻系统的图案数据转换器
KR101854828B1 (ko) * 2009-05-20 2018-05-04 마퍼 리쏘그라피 아이피 비.브이. 듀얼 패스 스캐닝
US8178280B2 (en) * 2010-02-05 2012-05-15 Taiwan Semiconductor Manufacturing Company, Ltd. Self-contained proximity effect correction inspiration for advanced lithography (special)
FR2959026B1 (fr) 2010-04-15 2012-06-01 Commissariat Energie Atomique Procede de lithographie a optimisation combinee de l'energie rayonnee et de la geometrie de dessin
JP5636238B2 (ja) * 2010-09-22 2014-12-03 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
JP5792513B2 (ja) * 2011-05-20 2015-10-14 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
JP5894856B2 (ja) 2012-05-22 2016-03-30 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
US9484186B2 (en) * 2012-10-23 2016-11-01 Synopsys, Inc. Modeling and correcting short-range and long-range effects in E-beam lithography
FR3000234B1 (fr) * 2012-12-21 2015-02-27 Commissariat Energie Atomique Procede d'estimation de motifs a imprimer sur plaque ou sur masque par lithographie a faisceau d'electrons et dispositif d'impression correspondant
TWI534528B (zh) 2013-03-27 2016-05-21 Nuflare Technology Inc Drawing an amount of the charged particle beam to obtain the modulation factor of a charged particle beam irradiation apparatus and method
US10274503B2 (en) 2013-05-08 2019-04-30 Vegenics Pty Limited Methods of using VEGF-C biomarkers for age-related macular degeneration (AMD) diagnosis
KR102403574B1 (ko) * 2014-02-21 2022-05-30 에이에스엠엘 네델란즈 비.브이. 하전 입자 리소그래피 시스템에서의 근접 효과 보정
EP2937889B1 (de) 2014-04-25 2017-02-15 IMS Nanofabrication AG Mehrstrahliges werkzeug zum schneiden von mustern
EP2950325B1 (de) 2014-05-30 2018-11-28 IMS Nanofabrication GmbH Kompensation von dosisinhomogenität mittels überlappender belichtungsorte
JP6890373B2 (ja) 2014-07-10 2021-06-18 アイエムエス ナノファブリケーション ゲーエムベーハー 畳み込みカーネルを使用する粒子ビーム描画機における結像偏向の補償
US9568907B2 (en) 2014-09-05 2017-02-14 Ims Nanofabrication Ag Correction of short-range dislocations in a multi-beam writer
US9653263B2 (en) 2015-03-17 2017-05-16 Ims Nanofabrication Ag Multi-beam writing of pattern areas of relaxed critical dimension
EP3096342B1 (de) 2015-03-18 2017-09-20 IMS Nanofabrication AG Bidirektionales mehrstrahliges schreiben mit doppeldurchgang
JP2016184605A (ja) * 2015-03-25 2016-10-20 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置及び描画データ作成方法
US10410831B2 (en) 2015-05-12 2019-09-10 Ims Nanofabrication Gmbh Multi-beam writing using inclined exposure stripes
KR102395198B1 (ko) 2015-09-22 2022-05-06 삼성전자주식회사 마스크 패턴의 보정 방법 및 이를 이용하는 레티클의 제조 방법
US10460071B2 (en) * 2015-11-04 2019-10-29 D2S, Inc. Shaped beam lithography including temperature effects
US10325756B2 (en) 2016-06-13 2019-06-18 Ims Nanofabrication Gmbh Method for compensating pattern placement errors caused by variation of pattern exposure density in a multi-beam writer
US10444629B2 (en) * 2016-06-28 2019-10-15 D2S, Inc. Bias correction for lithography
US10325757B2 (en) * 2017-01-27 2019-06-18 Ims Nanofabrication Gmbh Advanced dose-level quantization of multibeam-writers
US10522329B2 (en) 2017-08-25 2019-12-31 Ims Nanofabrication Gmbh Dose-related feature reshaping in an exposure pattern to be exposed in a multi beam writing apparatus
US11569064B2 (en) 2017-09-18 2023-01-31 Ims Nanofabrication Gmbh Method for irradiating a target using restricted placement grids
US10651010B2 (en) 2018-01-09 2020-05-12 Ims Nanofabrication Gmbh Non-linear dose- and blur-dependent edge placement correction
US10840054B2 (en) 2018-01-30 2020-11-17 Ims Nanofabrication Gmbh Charged-particle source and method for cleaning a charged-particle source using back-sputtering
JP7034825B2 (ja) * 2018-05-16 2022-03-14 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
US10884395B2 (en) 2018-12-22 2021-01-05 D2S, Inc. Method and system of reducing charged particle beam write time
US11604451B2 (en) 2018-12-22 2023-03-14 D2S, Inc. Method and system of reducing charged particle beam write time
US11099482B2 (en) 2019-05-03 2021-08-24 Ims Nanofabrication Gmbh Adapting the duration of exposure slots in multi-beam writers
US10748744B1 (en) 2019-05-24 2020-08-18 D2S, Inc. Method and system for determining a charged particle beam exposure for a local pattern density
US11756765B2 (en) 2019-05-24 2023-09-12 D2S, Inc. Method and system for determining a charged particle beam exposure for a local pattern density
KR20210132599A (ko) 2020-04-24 2021-11-04 아이엠에스 나노패브릭케이션 게엠베하 대전 입자 소스
JP2023138912A (ja) 2022-03-21 2023-10-03 アイエムエス ナノファブリケーション ゲーエムベーハー リソグラフィ描画法における熱膨張の補正

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3900737A (en) * 1974-04-18 1975-08-19 Bell Telephone Labor Inc Electron beam exposure system
CA1100237A (en) * 1977-03-23 1981-04-28 Roger F.W. Pease Multiple electron beam exposure system
US4243866A (en) * 1979-01-11 1981-01-06 International Business Machines Corporation Method and apparatus for forming a variable size electron beam
US4463265A (en) * 1982-06-17 1984-07-31 Hewlett-Packard Company Electron beam proximity effect correction by reverse field pattern exposure
US4988284A (en) * 1986-10-08 1991-01-29 Hewlett-Packard Company Method for compensating for the E-beam proximity effect
US4812962A (en) * 1987-04-09 1989-03-14 Harris Corp. Area feature sorting mechanism for neighborhood-based proximity correction in lithography processing of integrated circuit patterns
US5182718A (en) * 1989-04-04 1993-01-26 Matsushita Electric Industrial Co., Ltd. Method and apparatus for writing a pattern on a semiconductor sample based on a resist pattern corrected for proximity effects resulting from direct exposure of the sample by a charged-particle beam or light
US5051598A (en) * 1990-09-12 1991-09-24 International Business Machines Corporation Method for correcting proximity effects in electron beam lithography
JP3192157B2 (ja) * 1990-09-17 2001-07-23 株式会社東芝 電子ビーム描画方法及び描画装置
JPH065502A (ja) * 1992-06-18 1994-01-14 Fujitsu Ltd 露光データ変換方法および露光データ変換装置
US5294800A (en) * 1992-07-31 1994-03-15 International Business Machines Corporation E-beam control data compaction system and method
US5304441A (en) * 1992-12-31 1994-04-19 International Business Machines Corporation Method of optimizing exposure of photoresist by patterning as a function of thermal modeling
US5393987A (en) * 1993-05-28 1995-02-28 Etec Systems, Inc. Dose modulation and pixel deflection for raster scan lithography
JP2647000B2 (ja) * 1994-05-25 1997-08-27 日本電気株式会社 電子ビームの露光方法
JPH08297692A (ja) * 1994-09-16 1996-11-12 Mitsubishi Electric Corp 光近接補正装置及び方法並びにパタン形成方法
US5657235A (en) * 1995-05-03 1997-08-12 International Business Machines Corporation Continuous scale optical proximity correction by mask maker dose modulation
JPH0915833A (ja) * 1995-06-30 1997-01-17 Sony Corp 露光用マスク作製装置における走査用データ作成装置及び走査用データの作成方法
JP3454983B2 (ja) * 1995-08-25 2003-10-06 株式会社東芝 荷電ビーム描画方法
US5736281A (en) * 1996-06-07 1998-04-07 Lucent Technologies Inc. Dose modification proximity effect compensation (PEC) technique for electron beam lithography

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WO1998033197A1 (en) 1998-07-30
JP4364310B2 (ja) 2009-11-18
CA2249573A1 (en) 1998-07-30
US5847959A (en) 1998-12-08
EP0895652B1 (de) 2003-04-23
EP0895652A1 (de) 1999-02-10
DE69813689D1 (de) 2003-05-28
JP2000508839A (ja) 2000-07-11

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