DE69808317D1 - Anordnung und verfahren zur erzeugung von lokalen steuersignalen in einem speicher - Google Patents

Anordnung und verfahren zur erzeugung von lokalen steuersignalen in einem speicher

Info

Publication number
DE69808317D1
DE69808317D1 DE69808317T DE69808317T DE69808317D1 DE 69808317 D1 DE69808317 D1 DE 69808317D1 DE 69808317 T DE69808317 T DE 69808317T DE 69808317 T DE69808317 T DE 69808317T DE 69808317 D1 DE69808317 D1 DE 69808317D1
Authority
DE
Germany
Prior art keywords
memory
local
control signal
control signals
local control
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69808317T
Other languages
English (en)
Other versions
DE69808317T2 (de
Inventor
A Manning
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Micron Technology Inc
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Application granted granted Critical
Publication of DE69808317D1 publication Critical patent/DE69808317D1/de
Publication of DE69808317T2 publication Critical patent/DE69808317T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/22—Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management 
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/06—Arrangements for interconnecting storage elements electrically, e.g. by wiring
    • G11C5/063—Voltage and signal distribution in integrated semi-conductor memory access lines, e.g. word-line, bit-line, cross-over resistance, propagation delay
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1072—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers for memories with random access ports synchronised on clock signal pulse trains, e.g. synchronous memories, self timed memories

Landscapes

  • Dram (AREA)
  • Communication Control (AREA)
  • Circuits Of Receivers In General (AREA)
  • Selective Calling Equipment (AREA)
  • Channel Selection Circuits, Automatic Tuning Circuits (AREA)
DE69808317T 1997-06-18 1998-06-18 Anordnung und verfahren zur erzeugung von lokalen steuersignalen in einem speicher Expired - Lifetime DE69808317T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/877,957 US6009501A (en) 1997-06-18 1997-06-18 Method and apparatus for local control signal generation in a memory device
PCT/US1998/012814 WO1998058381A1 (en) 1997-06-18 1998-06-18 Method and apparatus for local control signal generation in a memory device

Publications (2)

Publication Number Publication Date
DE69808317D1 true DE69808317D1 (de) 2002-10-31
DE69808317T2 DE69808317T2 (de) 2003-05-22

Family

ID=25371088

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69808317T Expired - Lifetime DE69808317T2 (de) 1997-06-18 1998-06-18 Anordnung und verfahren zur erzeugung von lokalen steuersignalen in einem speicher

Country Status (8)

Country Link
US (2) US6009501A (de)
EP (1) EP1012845B1 (de)
JP (1) JP4374503B2 (de)
KR (1) KR100443607B1 (de)
AT (1) ATE225074T1 (de)
AU (1) AU7980898A (de)
DE (1) DE69808317T2 (de)
WO (1) WO1998058381A1 (de)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU9604698A (en) 1997-10-10 1999-05-03 Rambus Incorporated Method and apparatus for two step memory write operations
US6401167B1 (en) 1997-10-10 2002-06-04 Rambus Incorporated High performance cost optimized memory
WO1999019875A2 (en) * 1997-10-10 1999-04-22 Rambus Incorporated Apparatus and method for pipelined memory operations
KR100359157B1 (ko) * 1998-12-30 2003-01-24 주식회사 하이닉스반도체 라이트 명령어 레이턴시회로 및 그 제어방법
US6477630B2 (en) * 1999-02-24 2002-11-05 International Business Machines Corporation Hierarchical row activation method for banking control in multi-bank DRAM
US6111796A (en) * 1999-03-01 2000-08-29 Motorola, Inc. Programmable delay control for sense amplifiers in a memory
JP2001006360A (ja) * 1999-06-22 2001-01-12 Mitsubishi Electric Corp 同期型半導体記憶装置
US7356656B1 (en) * 2000-05-15 2008-04-08 Taiwan Semiconductor Manufacturing Company Skew free control of a multi-block SRAM
US6282131B1 (en) * 2000-09-27 2001-08-28 Virage Logic Corp. Self-timed clock circuitry in a multi-bank memory instance using a common timing synchronization node
US6646954B2 (en) * 2001-02-02 2003-11-11 Broadcom Corporation Synchronous controlled, self-timed local SRAM block
US6714467B2 (en) * 2002-03-19 2004-03-30 Broadcom Corporation Block redundancy implementation in heirarchical RAM's
US6760243B2 (en) * 2002-03-19 2004-07-06 Broadcom Corporation Distributed, highly configurable modular predecoding
US6798711B2 (en) * 2002-03-19 2004-09-28 Micron Technology, Inc. Memory with address management
TW591388B (en) * 2003-02-21 2004-06-11 Via Tech Inc Memory address decoding method and related apparatus by bit-pattern matching
US7093062B2 (en) * 2003-04-10 2006-08-15 Micron Technology, Inc. Flash memory data bus for synchronous burst read page
KR100631925B1 (ko) * 2005-01-28 2006-10-04 삼성전자주식회사 반도체 메모리 장치의 테스트 회로
US8699277B2 (en) * 2011-11-16 2014-04-15 Qualcomm Incorporated Memory configured to provide simultaneous read/write access to multiple banks
US10217494B2 (en) * 2017-06-28 2019-02-26 Apple Inc. Global bit line pre-charging and data latching in multi-banked memories using a delayed reset latch
US11127443B2 (en) 2020-01-08 2021-09-21 Micron Technology, Inc. Timing chains for accessing memory cells
KR102532566B1 (ko) 2021-11-23 2023-05-15 주식회사 자연 추진장약포 텐타처리 시스템
US20240281249A1 (en) * 2023-02-17 2024-08-22 Intel Corporation Load store cache microarchitecture

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5072424A (en) * 1985-07-12 1991-12-10 Anamartic Limited Wafer-scale integrated circuit memory
US5202857A (en) * 1990-11-07 1993-04-13 Emc Corporation System for generating memory timing and reducing memory access time
US5159572A (en) * 1990-12-24 1992-10-27 Motorola, Inc. DRAM architecture having distributed address decoding and timing control
US5323360A (en) * 1993-05-03 1994-06-21 Motorola Inc. Localized ATD summation for a memory
US5406517A (en) * 1993-08-23 1995-04-11 Advanced Micro Devices, Inc. Distributed negative gate power supply
US6175901B1 (en) * 1994-04-15 2001-01-16 Micron Technology, Inc. Method for initializing and reprogramming a control operation feature of a memory device
US5598376A (en) * 1994-12-23 1997-01-28 Micron Technology, Inc. Distributed write data drivers for burst access memories
US5636173A (en) * 1995-06-07 1997-06-03 Micron Technology, Inc. Auto-precharge during bank selection
KR0170723B1 (ko) * 1995-12-29 1999-03-30 김광호 단일 ras 신호에 의해 동시 동작이 가능한 이중 뱅크를 갖는 반도체 메모리 장치
JPH09288614A (ja) * 1996-04-22 1997-11-04 Mitsubishi Electric Corp 半導体集積回路装置、半導体記憶装置およびそのための制御回路
DE69724327T2 (de) * 1996-05-17 2004-06-17 Hyundai Electronics America Inc., San Jose Leistungsreduzierung während eines Blockschreibens
JP3725270B2 (ja) * 1996-12-13 2005-12-07 富士通株式会社 半導体装置
US5987576A (en) * 1997-02-27 1999-11-16 Hewlett-Packard Company Method and apparatus for generating and distributing clock signals with minimal skew
US5870350A (en) * 1997-05-21 1999-02-09 International Business Machines Corporation High performance, high bandwidth memory bus architecture utilizing SDRAMs
US5825711A (en) * 1997-06-13 1998-10-20 Micron Technology, Inc. Method and system for storing and processing multiple memory addresses
US6032220A (en) 1997-07-18 2000-02-29 Micron Technology, Inc. Memory device with dual timing and signal latching control

Also Published As

Publication number Publication date
DE69808317T2 (de) 2003-05-22
US6321316B1 (en) 2001-11-20
JP2002506554A (ja) 2002-02-26
EP1012845B1 (de) 2002-09-25
AU7980898A (en) 1999-01-04
US6009501A (en) 1999-12-28
ATE225074T1 (de) 2002-10-15
KR20010013997A (ko) 2001-02-26
WO1998058381A1 (en) 1998-12-23
JP4374503B2 (ja) 2009-12-02
EP1012845A1 (de) 2000-06-28
KR100443607B1 (ko) 2004-08-09

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition