DE69805742T2 - Verfahren zur Herstellung von korrosionsbeständigen Bauteile - Google Patents
Verfahren zur Herstellung von korrosionsbeständigen BauteileInfo
- Publication number
- DE69805742T2 DE69805742T2 DE69805742T DE69805742T DE69805742T2 DE 69805742 T2 DE69805742 T2 DE 69805742T2 DE 69805742 T DE69805742 T DE 69805742T DE 69805742 T DE69805742 T DE 69805742T DE 69805742 T2 DE69805742 T2 DE 69805742T2
- Authority
- DE
- Germany
- Prior art keywords
- silicon carbide
- film
- substrate
- temperature
- corrosion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000005260 corrosion Methods 0.000 title claims description 32
- 230000007797 corrosion Effects 0.000 title claims description 32
- 238000000034 method Methods 0.000 title claims description 25
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 230000008569 process Effects 0.000 title claims description 9
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 71
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 70
- 239000000758 substrate Substances 0.000 claims description 61
- 238000005229 chemical vapour deposition Methods 0.000 claims description 22
- 238000010438 heat treatment Methods 0.000 claims description 21
- 239000000919 ceramic Substances 0.000 claims description 13
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 6
- 229910052799 carbon Inorganic materials 0.000 claims description 6
- 229910010293 ceramic material Inorganic materials 0.000 claims description 4
- 150000001875 compounds Chemical class 0.000 claims description 4
- 229910003910 SiCl4 Inorganic materials 0.000 claims description 3
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 claims description 3
- 229910003915 SiCl2H2 Inorganic materials 0.000 claims description 2
- 229910003822 SiHCl3 Inorganic materials 0.000 claims description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 2
- 239000010408 film Substances 0.000 description 78
- 239000007789 gas Substances 0.000 description 26
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 12
- 230000000052 comparative effect Effects 0.000 description 11
- 239000012159 carrier gas Substances 0.000 description 10
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 9
- 239000001257 hydrogen Substances 0.000 description 9
- 229910052739 hydrogen Inorganic materials 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 7
- 230000002093 peripheral effect Effects 0.000 description 7
- 239000002994 raw material Substances 0.000 description 7
- 229910052786 argon Inorganic materials 0.000 description 6
- 238000001816 cooling Methods 0.000 description 6
- 238000002474 experimental method Methods 0.000 description 6
- 210000002381 plasma Anatomy 0.000 description 5
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- 239000005049 silicon tetrachloride Substances 0.000 description 4
- 238000011109 contamination Methods 0.000 description 3
- 238000005336 cracking Methods 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 239000012495 reaction gas Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 229910020323 ClF3 Inorganic materials 0.000 description 2
- 101100441092 Danio rerio crlf3 gene Proteins 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 description 2
- JOHWNGGYGAVMGU-UHFFFAOYSA-N trifluorochlorine Chemical compound FCl(F)F JOHWNGGYGAVMGU-UHFFFAOYSA-N 0.000 description 2
- 238000001947 vapour-phase growth Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- 230000003078 antioxidant effect Effects 0.000 description 1
- QZPSXPBJTPJTSZ-UHFFFAOYSA-N aqua regia Chemical compound Cl.O[N+]([O-])=O QZPSXPBJTPJTSZ-UHFFFAOYSA-N 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 238000009863 impact test Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/32—Carbides
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/009—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
- C04B41/50—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials
- C04B41/5053—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials non-oxide ceramics
- C04B41/5057—Carbides
- C04B41/5059—Silicon carbide
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
- C04B41/81—Coating or impregnation
- C04B41/85—Coating or impregnation with inorganic materials
- C04B41/87—Ceramics
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/32—Carbides
- C23C16/325—Silicon carbide
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/56—After-treatment
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2111/00—Mortars, concrete or artificial stone or mixtures to prepare them, characterised by specific function, property or use
- C04B2111/20—Resistance against chemical, physical or biological attack
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24942—Structurally defined web or sheet [e.g., overall dimension, etc.] including components having same physical characteristic in differing degree
- Y10T428/2495—Thickness [relative or absolute]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24942—Structurally defined web or sheet [e.g., overall dimension, etc.] including components having same physical characteristic in differing degree
- Y10T428/24992—Density or compression of components
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Structural Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29421197A JP3929140B2 (ja) | 1997-10-27 | 1997-10-27 | 耐蝕性部材およびその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE69805742D1 DE69805742D1 (de) | 2002-07-11 |
| DE69805742T2 true DE69805742T2 (de) | 2003-01-02 |
Family
ID=17804775
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE69805742T Expired - Lifetime DE69805742T2 (de) | 1997-10-27 | 1998-10-27 | Verfahren zur Herstellung von korrosionsbeständigen Bauteile |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US6117573A (enExample) |
| EP (1) | EP0924317B1 (enExample) |
| JP (1) | JP3929140B2 (enExample) |
| KR (1) | KR100319544B1 (enExample) |
| DE (1) | DE69805742T2 (enExample) |
| TW (1) | TW585930B (enExample) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100751945B1 (ko) * | 1999-09-03 | 2007-08-24 | 엘지전자 주식회사 | 방송 예약 청취 방법 및 장치 |
| JP5160181B2 (ja) * | 2006-11-21 | 2013-03-13 | 三菱マテリアル株式会社 | トリクロロシラン製造装置 |
| KR100863935B1 (ko) * | 2008-01-14 | 2008-11-18 | 주식회사 코미코 | 용사 코팅용 분말과 그 제조 방법 및 이를 이용한 코팅막의제조 방법 |
| US9016293B2 (en) * | 2009-08-21 | 2015-04-28 | Gas Turbine Efficiency Sweden Ab | Staged compressor water wash system |
| US9228575B2 (en) * | 2010-11-16 | 2016-01-05 | Zoeller Pump Company, Llc | Sealed and self-contained tankless water heater flushing system |
| KR102051668B1 (ko) * | 2016-12-20 | 2019-12-04 | 주식회사 티씨케이 | SiC 증착층을 포함하는 반도체 제조용 부품 및 그 제조방법 |
| JP6798000B1 (ja) * | 2019-12-23 | 2020-12-09 | 株式会社フェローテックマテリアルテクノロジーズ | ＳｉＣとＳｉによる混合部材の製造方法 |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| PL216964A1 (enExample) * | 1979-07-07 | 1981-02-13 | Biuro P Przemyslu Metal | |
| JPS59189622A (ja) * | 1983-04-13 | 1984-10-27 | Toshiba Ceramics Co Ltd | 半導体用拡散炉プロセスチユ−ブ |
| JPS59203799A (ja) * | 1983-04-28 | 1984-11-17 | Sharp Corp | 炭化珪素単結晶基板の製造方法 |
| DE3530551C1 (de) * | 1985-08-27 | 1986-08-28 | Nukem Gmbh | Vorrichtung zur Beschichtung von Formkörpern mit Siliziumcarbid |
| JPH089504B2 (ja) * | 1986-08-29 | 1996-01-31 | 住友化学工業株式会社 | 高密度炭化ケイ素焼結体の製造方法 |
| JPH03153876A (ja) * | 1989-11-10 | 1991-07-01 | Shin Etsu Chem Co Ltd | 炭化珪素質部材 |
| US5283361A (en) * | 1991-04-23 | 1994-02-01 | Eli Lilly And Company | N-hydroxy-N-[3-[2-(halophenylthio)phenyl]prop-2-enyl]ureas as lipoxygenase inhibitors |
| SE9202195D0 (sv) * | 1992-07-17 | 1992-07-17 | Sandvik Ab | Method of coating a ceramic body |
| US5296258A (en) * | 1992-09-30 | 1994-03-22 | Northern Telecom Limited | Method of forming silicon carbide |
| RU2082824C1 (ru) * | 1994-03-10 | 1997-06-27 | Московский государственный авиационный институт (технический университет) | Способ защиты жаропрочных материалов от воздействия агрессивных сред высокоскоростных газовых потоков (варианты) |
| JP3583812B2 (ja) * | 1994-09-05 | 2004-11-04 | 東京電力株式会社 | セラミックコーティング部材とその製造方法 |
| DE4441132A1 (de) * | 1994-11-21 | 1996-05-23 | Grohe Armaturen Friedrich | Dichtungselement, insbesondere für Absperr- und Regelorgane und Verfahren zu seiner Herstellung |
| US5861346A (en) * | 1995-07-27 | 1999-01-19 | Regents Of The University Of California | Process for forming silicon carbide films and microcomponents |
| US6042900A (en) * | 1996-03-12 | 2000-03-28 | Alexander Rakhimov | CVD method for forming diamond films |
| JPH1012692A (ja) * | 1996-06-25 | 1998-01-16 | Nisshinbo Ind Inc | ダミーウエハ |
| US5904778A (en) * | 1996-07-26 | 1999-05-18 | Applied Materials, Inc. | Silicon carbide composite article particularly useful for plasma reactors |
-
1997
- 1997-10-27 JP JP29421197A patent/JP3929140B2/ja not_active Expired - Fee Related
-
1998
- 1998-08-27 TW TW087114181A patent/TW585930B/zh not_active IP Right Cessation
- 1998-10-15 US US09/172,607 patent/US6117573A/en not_active Expired - Lifetime
- 1998-10-26 KR KR1019980044792A patent/KR100319544B1/ko not_active Expired - Fee Related
- 1998-10-27 EP EP98308770A patent/EP0924317B1/en not_active Expired - Lifetime
- 1998-10-27 DE DE69805742T patent/DE69805742T2/de not_active Expired - Lifetime
-
2000
- 2000-06-30 US US09/609,539 patent/US6447842B1/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| TW585930B (en) | 2004-05-01 |
| KR19990037372A (ko) | 1999-05-25 |
| EP0924317A1 (en) | 1999-06-23 |
| KR100319544B1 (ko) | 2002-02-19 |
| DE69805742D1 (de) | 2002-07-11 |
| US6117573A (en) | 2000-09-12 |
| JP3929140B2 (ja) | 2007-06-13 |
| EP0924317B1 (en) | 2002-06-05 |
| US6447842B1 (en) | 2002-09-10 |
| JPH11131236A (ja) | 1999-05-18 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition |