DE69801316T2 - MECHANISCH -CHEMISCHES POLIEREN VON KRISTALLEN UND EPITAXIE-SCHICHTEN AUS GaN UND Ga1-x-yAlxInyN - Google Patents
MECHANISCH -CHEMISCHES POLIEREN VON KRISTALLEN UND EPITAXIE-SCHICHTEN AUS GaN UND Ga1-x-yAlxInyNInfo
- Publication number
- DE69801316T2 DE69801316T2 DE69801316T DE69801316T DE69801316T2 DE 69801316 T2 DE69801316 T2 DE 69801316T2 DE 69801316 T DE69801316 T DE 69801316T DE 69801316 T DE69801316 T DE 69801316T DE 69801316 T2 DE69801316 T2 DE 69801316T2
- Authority
- DE
- Germany
- Prior art keywords
- polishing
- gan
- crystals
- yalxinyn
- chemical
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 49
- 239000013078 crystal Substances 0.000 title claims abstract description 28
- 239000000126 substance Substances 0.000 title claims abstract description 13
- 238000000034 method Methods 0.000 claims abstract description 19
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 13
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 5
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 18
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 13
- 235000011121 sodium hydroxide Nutrition 0.000 claims description 6
- 239000000243 solution Substances 0.000 claims description 6
- 239000007864 aqueous solution Substances 0.000 claims description 5
- 230000002950 deficient Effects 0.000 claims description 5
- 239000000203 mixture Substances 0.000 claims description 4
- 239000003795 chemical substances by application Substances 0.000 abstract 2
- 238000003486 chemical etching Methods 0.000 abstract 1
- 239000004744 fabric Substances 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N ammonia Natural products N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000000137 annealing Methods 0.000 description 3
- 229910003460 diamond Inorganic materials 0.000 description 3
- 239000010432 diamond Substances 0.000 description 3
- 238000001657 homoepitaxy Methods 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000013043 chemical agent Substances 0.000 description 2
- 239000007795 chemical reaction product Substances 0.000 description 2
- 230000005693 optoelectronics Effects 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 239000003518 caustics Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 231100000252 nontoxic Toxicity 0.000 description 1
- 230000003000 nontoxic effect Effects 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
- C30B29/406—Gallium nitride
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Weting (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PL97319329A PL184902B1 (pl) | 1997-04-04 | 1997-04-04 | Sposób usuwania nierówności i obszarów silnie zdefektowanych z powierzchni kryształów i warstw epitaksjalnych GaN i Ga AL In N |
| PCT/PL1998/000010 WO1998045511A1 (en) | 1997-04-04 | 1998-03-13 | MECHANO-CHEMICAL POLISHING OF CRYSTALS AND EPITAXIAL LAYERS OF GaN AND Ga1-x-yAlxInyN |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE69801316D1 DE69801316D1 (de) | 2001-09-13 |
| DE69801316T2 true DE69801316T2 (de) | 2002-05-02 |
Family
ID=20069596
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE69801316T Expired - Lifetime DE69801316T2 (de) | 1997-04-04 | 1998-03-13 | MECHANISCH -CHEMISCHES POLIEREN VON KRISTALLEN UND EPITAXIE-SCHICHTEN AUS GaN UND Ga1-x-yAlxInyN |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US6399500B1 (https=) |
| EP (1) | EP0972097B1 (https=) |
| JP (1) | JP4184441B2 (https=) |
| AT (1) | ATE204037T1 (https=) |
| DE (1) | DE69801316T2 (https=) |
| PL (1) | PL184902B1 (https=) |
| WO (1) | WO1998045511A1 (https=) |
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4145437B2 (ja) * | 1999-09-28 | 2008-09-03 | 住友電気工業株式会社 | 単結晶ＧａＮの結晶成長方法及び単結晶ＧａＮ基板の製造方法と単結晶ＧａＮ基板 |
| JP2001144014A (ja) * | 1999-11-17 | 2001-05-25 | Ngk Insulators Ltd | エピタキシャル成長用基板およびその製造方法 |
| TWI277666B (en) * | 2001-06-06 | 2007-04-01 | Ammono Sp Zoo | Process and apparatus for obtaining bulk mono-crystalline gallium-containing nitride |
| US6488767B1 (en) * | 2001-06-08 | 2002-12-03 | Advanced Technology Materials, Inc. | High surface quality GaN wafer and method of fabricating same |
| PL374180A1 (en) * | 2001-10-26 | 2005-10-03 | Ammono Sp.Z O.O. | Nitride semiconductor laser element, and production method therefor |
| JP4693351B2 (ja) * | 2001-10-26 | 2011-06-01 | アンモノ・スプウカ・ジ・オグラニチョノン・オドポヴィエドニアウノシツィオン | エピタキシャル成長用基板 |
| JP4403067B2 (ja) * | 2002-05-17 | 2010-01-20 | アンモノ・スプウカ・ジ・オグラニチョノン・オドポヴィエドニアウノシツィオン | 超臨界アンモニアを用いるバルク単結晶生産設備 |
| US20060138431A1 (en) * | 2002-05-17 | 2006-06-29 | Robert Dwilinski | Light emitting device structure having nitride bulk single crystal layer |
| JP4416648B2 (ja) * | 2002-05-17 | 2010-02-17 | アンモノ・スプウカ・ジ・オグラニチョノン・オドポヴィエドニアウノシツィオン | 発光素子の製造方法 |
| JP4663319B2 (ja) * | 2002-06-26 | 2011-04-06 | アンモノ・スプウカ・ジ・オグラニチョノン・オドポヴィエドニアウノシツィオン | ガリウム含有窒化物バルク単結晶の製造方法 |
| KR101088991B1 (ko) * | 2002-12-11 | 2011-12-01 | 니치아 카가쿠 고교 가부시키가이샤 | 벌크 단결정 갈륨-함유 질화물의 제조공정 |
| PL224992B1 (pl) * | 2002-12-11 | 2017-02-28 | Ammono Spółka Z Ograniczoną Odpowiedzialnością | Podłoże typu template dla urządzeń opto-elektrycznych lub elektrycznych oraz sposób jego wytwarzania |
| JP4511801B2 (ja) * | 2003-03-14 | 2010-07-28 | 株式会社リコー | Ｉｉｉ族窒化物結晶の研磨方法およびｉｉｉ族窒化物結晶および半導体デバイス |
| KR20060024772A (ko) * | 2003-06-16 | 2006-03-17 | 스미토모덴키고교가부시키가이샤 | 질화물 반도체 결정 표면의 가공 방법 및 그 방법에 의해얻어진 질화물 반도체 결정 |
| EP1769105B1 (en) * | 2004-06-11 | 2014-05-14 | Ammono S.A. | Bulk mono-crystalline gallium nitride and method for its preparation |
| PL371405A1 (pl) * | 2004-11-26 | 2006-05-29 | Ammono Sp.Z O.O. | Sposób wytwarzania objętościowych monokryształów metodą wzrostu na zarodku |
| JP2007299979A (ja) * | 2006-05-01 | 2007-11-15 | Sumitomo Electric Ind Ltd | Ｉｉｉ族窒化物結晶の表面処理方法およびｉｉｉ族窒化物結晶基板 |
| US7585772B2 (en) * | 2006-07-26 | 2009-09-08 | Freiberger Compound Materials Gmbh | Process for smoothening III-N substrates |
| KR101363316B1 (ko) | 2006-07-26 | 2014-02-14 | 프라이베르게르 컴파운드 마터리얼스 게엠베하 | Ⅲ-ｎ 기판의 평활화방법 |
| JP2009272380A (ja) | 2008-05-01 | 2009-11-19 | Sumitomo Electric Ind Ltd | Ｉｉｉ族窒化物結晶およびその表面処理方法、ｉｉｉ族窒化物積層体およびその製造方法、ならびにｉｉｉ族窒化物半導体デバイスおよびその製造方法 |
-
1997
- 1997-04-04 PL PL97319329A patent/PL184902B1/pl unknown
-
1998
- 1998-03-13 JP JP54264598A patent/JP4184441B2/ja not_active Expired - Fee Related
- 1998-03-13 WO PCT/PL1998/000010 patent/WO1998045511A1/en not_active Ceased
- 1998-03-13 EP EP98907295A patent/EP0972097B1/en not_active Expired - Lifetime
- 1998-03-13 US US09/402,692 patent/US6399500B1/en not_active Expired - Fee Related
- 1998-03-13 AT AT98907295T patent/ATE204037T1/de not_active IP Right Cessation
- 1998-03-13 DE DE69801316T patent/DE69801316T2/de not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| PL184902B1 (pl) | 2003-01-31 |
| EP0972097A1 (en) | 2000-01-19 |
| DE69801316D1 (de) | 2001-09-13 |
| JP4184441B2 (ja) | 2008-11-19 |
| PL319329A1 (en) | 1998-10-12 |
| ATE204037T1 (de) | 2001-08-15 |
| EP0972097B1 (en) | 2001-08-08 |
| WO1998045511A1 (en) | 1998-10-15 |
| JP2001518870A (ja) | 2001-10-16 |
| US6399500B1 (en) | 2002-06-04 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE69801316T2 (de) | MECHANISCH -CHEMISCHES POLIEREN VON KRISTALLEN UND EPITAXIE-SCHICHTEN AUS GaN UND Ga1-x-yAlxInyN | |
| DE102008006745B3 (de) | Verfahren zur Herstellung einer Halbleiterstruktur | |
| DE69835469T2 (de) | Verfahren zur Herstellung eines geklebten Substrates | |
| DE602004008941T2 (de) | Verfahren zur herstellung einer epitaktischen schicht | |
| DE69927360T2 (de) | Ablösen von monokristallinen schichten ausgehend von einer ionenimplantation | |
| DE69714627T2 (de) | Saphir Einkristall, seine Anwendung als Substrat in einem Halbleiterlaserdiode und Verfahren zu ihrer Herstellung | |
| DE102008059044B4 (de) | Verfahren zum Polieren einer Halbleiterscheibe mit einer verspannt-relaxierten Si1-xGex-Schicht | |
| DE10329072A1 (de) | Halbleiterwafer-Behandlungselement | |
| DE102005024073A1 (de) | Halbleiter-Schichtstruktur und Verfahren zur Herstellung einer Halbleiter-Schichtstruktur | |
| DE69830788T2 (de) | Ruckgewinnung von siliciumcarbidsubstraten mit nutzbarer oberfläche | |
| DE2523067A1 (de) | Verfahren zum aufwachsen von silizium-epitaxialschichten | |
| DE68916393T2 (de) | Verfahren zur Herstellung von ebenen Wafern. | |
| EP0989600A2 (en) | Surface cleaning method for manufacturing II-VI compound semiconductor epitaxial wafers | |
| DE2638302A1 (de) | Aetzmittel fuer iii/v-halbleiter | |
| DE102014208815B4 (de) | Verfahren zur Herstellung einer Halbleiterscheibe aus Silizium | |
| DE102018213437A1 (de) | Verfahren zur Herstellung von Galliumnitridsubstrat unter Verwendung von Hydriddampfphasenepitaxie | |
| DE19823904A1 (de) | Hochebene Halbleiterscheibe aus Silicium und Verfahren zur Herstellung von Halbleiterscheiben | |
| EP1852901A1 (de) | Verfahren zur Herstellung einer Schichtenstruktur | |
| DE60107035T2 (de) | Quarzglasvorrichtungen für die Halbleiterindustrie und Verfahren zur deren Herstellung | |
| DE3934140A1 (de) | Verfahren zur die ausbildung von getterfaehigen zentren induzierenden oberflaechenbehandlung von halbleiterscheiben und dadurch erhaeltliche beidseitig polierte scheiben | |
| DE69938609T2 (de) | Epitaktisches substrat aus aluminium-galliumnitrid-halbleitern und herstellungsverfahren dafür | |
| WO2023046427A1 (de) | Verfahren zur herstellung eines wachstumssubstrats, wachstumssubstrat, und verfahren zur herstellung einer vielzahl optoelektronischer halbleiterchips | |
| EP0381051A1 (de) | Mit einer strukturierten Oberfläche versehene Substrate für das Aufwachsen von erstarrenden Schichten aus Schmelzen, insbesondere von Halbleitermaterial | |
| DE69227158T2 (de) | Extrinsisches Gettering für ein halbleitendes Substrat | |
| DE102020132900B4 (de) | Silizium-basierte Wafer und Verfahren zur Herstellung von Silizium-basierten Wafern |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition | ||
| R082 | Change of representative |
Ref document number: 972097 Country of ref document: EP Representative=s name: PATENTANWAELTE OSTRIGA, SONNET, WIRTHS & VORWE, DE |
|
| R082 | Change of representative |
Ref document number: 972097 Country of ref document: EP Representative=s name: ROCHE, VON WESTERNHAGEN & EHRESMANN, DE |