DE69720080D1 - Herstellungsverfahren für eine flash-speicherzelle - Google Patents

Herstellungsverfahren für eine flash-speicherzelle

Info

Publication number
DE69720080D1
DE69720080D1 DE69720080T DE69720080T DE69720080D1 DE 69720080 D1 DE69720080 D1 DE 69720080D1 DE 69720080 T DE69720080 T DE 69720080T DE 69720080 T DE69720080 T DE 69720080T DE 69720080 D1 DE69720080 D1 DE 69720080D1
Authority
DE
Germany
Prior art keywords
manufacturing
storage cell
flash storage
flash
cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69720080T
Other languages
English (en)
Other versions
DE69720080T2 (de
Inventor
Anders T Dejenfelt
Kameswara K Rao
George H Simmons
Tomoyuki Furuhata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Application granted granted Critical
Publication of DE69720080D1 publication Critical patent/DE69720080D1/de
Publication of DE69720080T2 publication Critical patent/DE69720080T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0433—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and one or more separate select transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H10B41/35—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region with a cell select transistor, e.g. NAND

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
DE69720080T 1996-09-27 1997-06-13 Herstellungsverfahren für eine flash-speicherzelle Expired - Lifetime DE69720080T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/722,645 US5914514A (en) 1996-09-27 1996-09-27 Two transistor flash EPROM cell

Publications (2)

Publication Number Publication Date
DE69720080D1 true DE69720080D1 (de) 2003-04-24
DE69720080T2 DE69720080T2 (de) 2003-10-23

Family

ID=24902748

Family Applications (2)

Application Number Title Priority Date Filing Date
DE69706550T Expired - Lifetime DE69706550T2 (de) 1996-09-27 1997-06-13 Zwei-transistor-flash-speicherzelle
DE69720080T Expired - Lifetime DE69720080T2 (de) 1996-09-27 1997-06-13 Herstellungsverfahren für eine flash-speicherzelle

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE69706550T Expired - Lifetime DE69706550T2 (de) 1996-09-27 1997-06-13 Zwei-transistor-flash-speicherzelle

Country Status (5)

Country Link
US (1) US5914514A (de)
EP (4) EP1022746A3 (de)
JP (1) JP2001509935A (de)
DE (2) DE69706550T2 (de)
WO (1) WO1998013829A1 (de)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW417256B (en) 1997-01-31 2001-01-01 Seiko Epson Corp Semiconductor MOS device and its manufacturing method
US6835979B1 (en) * 1997-04-11 2004-12-28 Altera Corporation Nonvolatle memory
US6114724A (en) * 1998-03-31 2000-09-05 Cypress Semiconductor Corporation Nonvolatile semiconductor memory cell with select gate
JP3743486B2 (ja) 1999-06-23 2006-02-08 セイコーエプソン株式会社 不揮発性メモリトランジスタを含む半導体装置の製造方法
US6522587B1 (en) 1999-06-23 2003-02-18 Seiko Epson Corporation Non-volatile semiconductor memory devices
JP2001007227A (ja) 1999-06-23 2001-01-12 Seiko Epson Corp 不揮発性半導体記憶装置
JP2001060674A (ja) 1999-08-20 2001-03-06 Seiko Epson Corp 不揮発性メモリトランジスタを含む半導体装置
US6281089B1 (en) * 1999-09-14 2001-08-28 Worldwide Semiconductor Manufacturing Corp. Method for fabricating an embedded flash memory cell
JP3587100B2 (ja) 1999-09-17 2004-11-10 セイコーエプソン株式会社 不揮発性メモリトランジスタを含む半導体装置の製造方法
US6757196B1 (en) 2001-03-22 2004-06-29 Aplus Flash Technology, Inc. Two transistor flash memory cell for use in EEPROM arrays with a programmable logic device
AU2002366683A1 (en) * 2001-12-13 2003-06-23 Koninklijke Philips Electronics N.V. A device and method to read a 2-transistor flash memory cell
DE10201303A1 (de) * 2002-01-15 2003-07-31 Infineon Technologies Ag Nichtflüchtige Zweitransistor-Halbleiterspeicherzelle sowie zugehöriges Herstellungsverfahren
US6636442B2 (en) 2002-01-29 2003-10-21 Lattice Semiconductor Corporation Non-volatile memory element having a cascoded transistor scheme to reduce oxide field stress
US20060007772A1 (en) * 2002-03-19 2006-01-12 O2Ic, Inc. Non-volatile memory device
US7232717B1 (en) 2002-05-28 2007-06-19 O2Ic, Inc. Method of manufacturing non-volatile DRAM
US6884539B2 (en) * 2002-07-02 2005-04-26 Microcell Corporation Microcell electrochemical devices and assemblies with corrosion-resistant current collectors, and method of making the same
KR100539276B1 (ko) * 2003-04-02 2005-12-27 삼성전자주식회사 게이트 라인을 포함하는 반도체 장치 및 이의 제조 방법
US6822254B1 (en) 2003-04-04 2004-11-23 Michael L. Lovejoy Non-volatile memory cell
US6894527B1 (en) 2003-05-12 2005-05-17 Xilinx, Inc. Evolved circuits for bitstream protection
TWI276206B (en) * 2003-11-25 2007-03-11 Promos Technologies Inc Method for fabricating flash memory device and structure thereof
US20050145924A1 (en) * 2004-01-07 2005-07-07 I-Sheng Liu Source/drain adjust implant
US7186612B2 (en) * 2004-01-28 2007-03-06 O2Ic, Inc. Non-volatile DRAM and a method of making thereof
US20050219913A1 (en) * 2004-04-06 2005-10-06 O2Ic, Inc. Non-volatile memory array
JP2006048749A (ja) * 2004-07-30 2006-02-16 Seiko Epson Corp 不揮発性記憶装置及び不揮発性記憶装置のデータ書き込み方法
US20060193174A1 (en) * 2005-02-25 2006-08-31 O2Ic Non-volatile and static random access memory cells sharing the same bitlines
US7547944B2 (en) * 2006-03-30 2009-06-16 Catalyst Semiconductor, Inc. Scalable electrically eraseable and programmable memory (EEPROM) cell array
US20090003074A1 (en) * 2006-03-30 2009-01-01 Catalyst Semiconductor, Inc. Scalable Electrically Eraseable And Programmable Memory (EEPROM) Cell Array
US8139408B2 (en) * 2006-09-05 2012-03-20 Semiconductor Components Industries, L.L.C. Scalable electrically eraseable and programmable memory
US8750041B2 (en) 2006-09-05 2014-06-10 Semiconductor Components Industries, Llc Scalable electrically erasable and programmable memory
US8320191B2 (en) 2007-08-30 2012-11-27 Infineon Technologies Ag Memory cell arrangement, method for controlling a memory cell, memory array and electronic device
US9324430B2 (en) * 2014-04-30 2016-04-26 Globalfoundries Inc. Method for defining a default state of a charge trap based memory cell
US10224335B2 (en) 2015-01-29 2019-03-05 Hewlett-Packard Development Company, L.P. Integrated circuits

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3986054A (en) * 1973-10-11 1976-10-12 International Business Machines Corporation High voltage integrated driver circuit
US4479203A (en) * 1981-11-16 1984-10-23 Motorola, Inc. Electrically erasable programmable read only memory cell
US4577295A (en) * 1983-05-31 1986-03-18 Intel Corporation Hybrid E2 cell and related array
DE3481667D1 (de) * 1983-08-29 1990-04-19 Seeq Technology Inc Mos-speicherzelle mit schwimmendem gate und verfahren zu ihrer verfertigung.
US4822750A (en) * 1983-08-29 1989-04-18 Seeq Technology, Inc. MOS floating gate memory cell containing tunneling diffusion region in contact with drain and extending under edges of field oxide
US4698787A (en) * 1984-11-21 1987-10-06 Exel Microelectronics, Inc. Single transistor electrically programmable memory device and method
FR2583920B1 (fr) * 1985-06-21 1987-07-31 Commissariat Energie Atomique Procede de fabrication d'un circuit integre et notamment d'une memoire eprom comportant deux composants distincts isoles electriquement
US4785423A (en) * 1987-01-22 1988-11-15 Intel Corporation Current limited epld array
US4833096A (en) * 1988-01-19 1989-05-23 Atmel Corporation EEPROM fabrication process
US5033023A (en) * 1988-04-08 1991-07-16 Catalyst Semiconductor, Inc. High density EEPROM cell and process for making the cell
US5095344A (en) * 1988-06-08 1992-03-10 Eliyahou Harari Highly compact eprom and flash eeprom devices
US5120672A (en) * 1989-02-22 1992-06-09 Texas Instruments Incorporated Fabricating a single level merged EEPROM cell having an ONO memory stack substantially spaced from the source region
JP2807256B2 (ja) * 1989-03-17 1998-10-08 株式会社東芝 不揮発性半導体メモリ
US5066992A (en) * 1989-06-23 1991-11-19 Atmel Corporation Programmable and erasable MOS memory device
US5010028A (en) * 1989-12-29 1991-04-23 Texas Instruments Incorporated Method of making hot electron programmable, tunnel electron erasable contactless EEPROM
JPH04123471A (ja) * 1990-09-14 1992-04-23 Oki Electric Ind Co Ltd 半導体記憶装置のデータ書込みおよび消去方法
KR970000533B1 (ko) * 1990-12-20 1997-01-13 후지쓰 가부시끼가이샤 Eprom 및 그 제조방법
JPH06120514A (ja) * 1991-01-17 1994-04-28 Texas Instr Inc <Ti> 不揮発性メモリ・セル構造体とその製造法
US5313427A (en) * 1991-09-20 1994-05-17 Texas Instruments Incorporated EEPROM array with narrow margin of voltage thresholds after erase
US5218568A (en) * 1991-12-17 1993-06-08 Texas Instruments Incorporated Electrically-erasable, electrically-programmable read-only memory cell, an array of such cells and methods for making and using the same
US5379253A (en) * 1992-06-01 1995-01-03 National Semiconductor Corporation High density EEPROM cell array with novel programming scheme and method of manufacture
US5329487A (en) * 1993-03-08 1994-07-12 Altera Corporation Two transistor flash EPROM cell
US5471422A (en) * 1994-04-11 1995-11-28 Motorola, Inc. EEPROM cell with isolation transistor and methods for making and operating the same
US5687118A (en) * 1995-11-14 1997-11-11 Programmable Microelectronics Corporation PMOS memory cell with hot electron injection programming and tunnelling erasing

Also Published As

Publication number Publication date
EP0928485B1 (de) 2001-09-05
EP1022780B1 (de) 2003-03-19
US5914514A (en) 1999-06-22
DE69706550T2 (de) 2002-07-11
WO1998013829A1 (en) 1998-04-02
DE69720080T2 (de) 2003-10-23
EP1022745A3 (de) 2000-10-11
EP1022780A3 (de) 2000-11-22
EP0928485A1 (de) 1999-07-14
EP1022746A3 (de) 2000-10-11
EP1022780A2 (de) 2000-07-26
DE69706550D1 (de) 2001-10-11
JP2001509935A (ja) 2001-07-24
EP1022745A2 (de) 2000-07-26
EP1022746A2 (de) 2000-07-26

Similar Documents

Publication Publication Date Title
DE69720080T2 (de) Herstellungsverfahren für eine flash-speicherzelle
DE69521705D1 (de) Abtastverfahren für einen flash-speicher mit mehrstufigen zellen
DE69929943D1 (de) Ein Leseverstärker für Speicherzellen
DE59704729D1 (de) Verfahren zum betrieb einer speicherzellenanordnung
DE60041569D1 (de) Herstellungsverfahren für eine solarzelle
DE59814170D1 (de) Speicherzellenanordnung und Verfahren zu deren Herstellung
DE59611290D1 (de) Elektrisch programmierbare Speicherzellenanordnung und Verfahren zu deren Herstellung
GB9515216D0 (en) Method for manufacturing a flash eeprom cell
DE69525554T2 (de) Spannungsversorgungen für flash-speicher
DE59803328D1 (de) Dreidimensionale Halbleiter-Speicherzellenanordnung und Verfahren zu ihrer Herstellung
DE59501936D1 (de) Festwert-speicherzellenanordnung und verfahren zu deren herstellung
NO964110D0 (no) Forbedret energilagringsanordning, samt fremgangsmåter for fremstilling
DE69738595D1 (de) Herstellungsmethode für ein Halbleiter-Bauteil
DE69935362D1 (de) Automatische Nachbarzellidentifizierung in einem Zellularsystem
DE69829011D1 (de) Referenz zelle für ferroelektrischen 1T/1C-Speicher
DE69517060T2 (de) Spannungsreduzierung für nichtflüchtige Speicherzelle
DE69738705D1 (de) Herstellungsverfahren für eine Kontaktstruktur
DE50000341D1 (de) Speicherzellenanordnung und verfahren zu deren herstellung
DE59608152D1 (de) Elektrisch schreib- und löschbare festwertspeicherzellenanordnung und verfahren zu deren herstellung
TR199700569A3 (tr) Büzülmesi az olan bir ipligi imale mahsus yöntem.
DE69712080D1 (de) Herstellungsverfahren für eine halbleitervorrichtung
DE59814135D1 (de) Herstellverfahren für eine erhabene Kondensatorelektrode
DE69707169D1 (de) Programmierung für nicht-flüchtige Speicherzelle
DE69808513T2 (de) Herstellungsverfahren für meta-xylol
DE69826471D1 (de) Verfahren zum Herstellen von nicht selbstausgerichteten, FLOTOX-EEPROM-speicherzellen

Legal Events

Date Code Title Description
8364 No opposition during term of opposition