DE69709439D1 - Herstellungsverfahren einer Flüssigkristallanzeigevorrichtung - Google Patents
Herstellungsverfahren einer FlüssigkristallanzeigevorrichtungInfo
- Publication number
- DE69709439D1 DE69709439D1 DE69709439T DE69709439T DE69709439D1 DE 69709439 D1 DE69709439 D1 DE 69709439D1 DE 69709439 T DE69709439 T DE 69709439T DE 69709439 T DE69709439 T DE 69709439T DE 69709439 D1 DE69709439 D1 DE 69709439D1
- Authority
- DE
- Germany
- Prior art keywords
- manufacturing
- liquid crystal
- display device
- crystal display
- liquid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004973 liquid crystal related substance Substances 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1345—Conductors connecting electrodes to cell terminals
- G02F1/13454—Drivers integrated on the active matrix substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49866—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials
- H01L23/49894—Materials of the insulating layers or coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78603—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the insulating substrate or support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78651—Silicon transistors
- H01L29/7866—Non-monocrystalline silicon transistors
- H01L29/78672—Polycrystalline or microcrystalline silicon transistor
- H01L29/78675—Polycrystalline or microcrystalline silicon transistor with normal-type structure, e.g. with top gate
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2202/00—Materials and properties
- G02F2202/10—Materials and properties semiconductor
- G02F2202/104—Materials and properties semiconductor poly-Si
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
- H01L29/78621—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78645—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Optics & Photonics (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16244596 | 1996-06-04 | ||
JP13068397A JPH1054999A (ja) | 1996-06-04 | 1997-05-21 | 表示装置とその製造法 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE69709439D1 true DE69709439D1 (de) | 2002-02-07 |
Family
ID=26465752
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69709439T Expired - Lifetime DE69709439D1 (de) | 1996-06-04 | 1997-06-02 | Herstellungsverfahren einer Flüssigkristallanzeigevorrichtung |
Country Status (6)
Country | Link |
---|---|
US (1) | US6097453A (de) |
EP (1) | EP0811868B1 (de) |
JP (1) | JPH1054999A (de) |
KR (1) | KR100289776B1 (de) |
DE (1) | DE69709439D1 (de) |
TW (1) | TW520459B (de) |
Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7202497B2 (en) * | 1997-11-27 | 2007-04-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
JP4014710B2 (ja) * | 1997-11-28 | 2007-11-28 | 株式会社半導体エネルギー研究所 | 液晶表示装置 |
JP4332244B2 (ja) * | 1998-10-30 | 2009-09-16 | シャープ株式会社 | Mos型容量素子 |
JP2000258798A (ja) * | 1999-03-05 | 2000-09-22 | Sanyo Electric Co Ltd | 表示装置 |
US6680487B1 (en) * | 1999-05-14 | 2004-01-20 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor comprising a TFT provided on a substrate having an insulating surface and method of fabricating the same |
US7245018B1 (en) * | 1999-06-22 | 2007-07-17 | Semiconductor Energy Laboratory Co., Ltd. | Wiring material, semiconductor device provided with a wiring using the wiring material and method of manufacturing thereof |
KR100583979B1 (ko) | 2000-02-11 | 2006-05-26 | 엘지.필립스 엘시디 주식회사 | 액정 표시장치 제조방법 및 그 제조방법에 따른액정표시장치 |
DE10046411A1 (de) * | 2000-09-18 | 2002-03-28 | Philips Corp Intellectual Pty | Projektionseinrichtung mit Flüssigkristall-Lichtmodulator |
US6376323B1 (en) * | 2001-04-04 | 2002-04-23 | Advanced Micro Devices, Inc. | Fabrication of gate of P-channel field effect transistor with added implantation before patterning of the gate |
US20020182893A1 (en) * | 2001-06-05 | 2002-12-05 | International Business Machines Corporation | Oxidation of silicon nitride films in semiconductor devices |
KR100415617B1 (ko) * | 2001-12-06 | 2004-01-24 | 엘지.필립스 엘시디 주식회사 | 에천트와 이를 이용한 금속배선 제조방법 및박막트랜지스터의 제조방법 |
US6953730B2 (en) * | 2001-12-20 | 2005-10-11 | Micron Technology, Inc. | Low-temperature grown high quality ultra-thin CoTiO3 gate dielectrics |
US6885146B2 (en) | 2002-03-14 | 2005-04-26 | Semiconductor Energy Laboratory Co., Ltd. | Display device comprising substrates, contrast medium and barrier layers between contrast medium and each of substrates |
JP4202091B2 (ja) * | 2002-11-05 | 2008-12-24 | 株式会社半導体エネルギー研究所 | アクティブマトリクス型液晶表示装置の作製方法 |
KR100942833B1 (ko) * | 2002-12-20 | 2010-02-18 | 엘지디스플레이 주식회사 | 액정표시장치 및 그의 구동장치 |
US7384862B2 (en) | 2003-06-30 | 2008-06-10 | Semiconductor Energy Laboratory Co., Ltd. | Method for fabricating semiconductor device and display device |
TWI255032B (en) * | 2004-01-29 | 2006-05-11 | Casio Computer Co Ltd | Transistor array and manufacturing method thereof image processing device |
KR101009674B1 (ko) * | 2004-04-07 | 2011-01-19 | 엘지디스플레이 주식회사 | 액정표시장치 및 그의 구동방법 |
JP5010108B2 (ja) * | 2005-03-25 | 2012-08-29 | 株式会社沖データ | 半導体複合装置、プリントヘッド、及びそれを用いた画像形成装置 |
JP2008204966A (ja) * | 2005-05-23 | 2008-09-04 | Sharp Corp | 半導体装置及びその製造方法並びに液晶表示装置 |
JP2007066944A (ja) | 2005-08-29 | 2007-03-15 | Nissan Motor Co Ltd | 炭化珪素半導体装置及びその製造方法 |
US8184225B2 (en) * | 2005-09-05 | 2012-05-22 | Sharp Kabushiki Kaisha | Semiconductor device, production method thereof, and display device |
KR101201316B1 (ko) | 2005-11-29 | 2012-11-14 | 엘지디스플레이 주식회사 | 버퍼절연막과 이를 구비한 반도체소자 및 반도체소자의제조방법 |
JP5740270B2 (ja) * | 2011-09-27 | 2015-06-24 | 株式会社東芝 | 薄膜トランジスタ、その製造方法、および表示装置 |
KR101903445B1 (ko) * | 2012-01-10 | 2018-10-05 | 삼성디스플레이 주식회사 | 반도체 장치 및 이의 제조 방법 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3483581B2 (ja) * | 1991-08-26 | 2004-01-06 | 株式会社半導体エネルギー研究所 | 半導体装置 |
EP0554060A3 (en) * | 1992-01-31 | 1993-12-01 | Canon Kk | Liquid crystal display apparatus |
JPH06132306A (ja) * | 1992-10-21 | 1994-05-13 | Casio Comput Co Ltd | 半導体装置の製造方法 |
DE69431636T2 (de) * | 1993-07-26 | 2003-06-26 | Seiko Epson Corp | Dünnschicht-Halbleiteranordnung, ihre Herstellung und Anzeigsystem |
CN1052116C (zh) * | 1994-06-15 | 2000-05-03 | 精工爱普生株式会社 | 薄膜半导体器件的制造方法 |
DE69529493T2 (de) * | 1994-06-20 | 2003-10-30 | Canon Kk | Anzeigevorrichtung und Verfahren zu ihrer Herstellung |
JPH0832083A (ja) * | 1994-07-15 | 1996-02-02 | Sony Corp | 薄膜トランジスタ |
JP3049689B2 (ja) * | 1995-09-14 | 2000-06-05 | キヤノン株式会社 | 液晶表示装置 |
JPH09218425A (ja) * | 1996-02-09 | 1997-08-19 | Toshiba Electron Eng Corp | 液晶表示装置及びその製造方法 |
-
1997
- 1997-05-21 JP JP13068397A patent/JPH1054999A/ja active Pending
- 1997-05-29 TW TW086107325A patent/TW520459B/zh not_active IP Right Cessation
- 1997-06-02 DE DE69709439T patent/DE69709439D1/de not_active Expired - Lifetime
- 1997-06-02 US US08/867,494 patent/US6097453A/en not_active Expired - Fee Related
- 1997-06-02 EP EP97303720A patent/EP0811868B1/de not_active Expired - Lifetime
- 1997-06-04 KR KR1019970023106A patent/KR100289776B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
EP0811868A1 (de) | 1997-12-10 |
KR980006440A (ko) | 1998-03-30 |
EP0811868B1 (de) | 2002-01-02 |
US6097453A (en) | 2000-08-01 |
KR100289776B1 (ko) | 2001-10-24 |
TW520459B (en) | 2003-02-11 |
JPH1054999A (ja) | 1998-02-24 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8332 | No legal effect for de |