DE69700481T2 - Herstellungsverfahren für elektronisches TFT-Bauelement - Google Patents

Herstellungsverfahren für elektronisches TFT-Bauelement

Info

Publication number
DE69700481T2
DE69700481T2 DE69700481T DE69700481T DE69700481T2 DE 69700481 T2 DE69700481 T2 DE 69700481T2 DE 69700481 T DE69700481 T DE 69700481T DE 69700481 T DE69700481 T DE 69700481T DE 69700481 T2 DE69700481 T2 DE 69700481T2
Authority
DE
Germany
Prior art keywords
manufacturing process
tft component
electronic
electronic tft
component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69700481T
Other languages
English (en)
Other versions
DE69700481D1 (de
Inventor
Nigel David Young
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tpo Hong Kong Holding Ltd Hongkong Hk
Original Assignee
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Electronics NV filed Critical Koninklijke Philips Electronics NV
Publication of DE69700481D1 publication Critical patent/DE69700481D1/de
Application granted granted Critical
Publication of DE69700481T2 publication Critical patent/DE69700481T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/6675—Amorphous silicon or polysilicon transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/6675—Amorphous silicon or polysilicon transistors
    • H01L29/66757—Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78645—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651—Silicon transistors
    • H01L29/7866—Non-monocrystalline silicon transistors
    • H01L29/78672—Polycrystalline or microcrystalline silicon transistor
    • H01L29/78675—Polycrystalline or microcrystalline silicon transistor with normal-type structure, e.g. with top gate
DE69700481T 1996-03-22 1997-03-04 Herstellungsverfahren für elektronisches TFT-Bauelement Expired - Lifetime DE69700481T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GBGB9606083.5A GB9606083D0 (en) 1996-03-22 1996-03-22 Electronic device manufacture

Publications (2)

Publication Number Publication Date
DE69700481D1 DE69700481D1 (de) 1999-10-14
DE69700481T2 true DE69700481T2 (de) 2000-04-06

Family

ID=10790862

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69700481T Expired - Lifetime DE69700481T2 (de) 1996-03-22 1997-03-04 Herstellungsverfahren für elektronisches TFT-Bauelement

Country Status (6)

Country Link
US (1) US5930609A (de)
EP (1) EP0797246B1 (de)
JP (1) JP4201856B2 (de)
KR (1) KR100472157B1 (de)
DE (1) DE69700481T2 (de)
GB (1) GB9606083D0 (de)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6582996B1 (en) * 1998-07-13 2003-06-24 Fujitsu Limited Semiconductor thin film forming method
GB2358082B (en) 2000-01-07 2003-11-12 Seiko Epson Corp Semiconductor transistor
GB2358083B (en) * 2000-01-07 2004-02-18 Seiko Epson Corp Thin-film transistor and its manufacturing method
SG120880A1 (en) * 2001-08-31 2006-04-26 Semiconductor Energy Lab Laser irradiation method, laser irradiation apparatus, and method of manufacturing a semiconductor device
TW589667B (en) * 2001-09-25 2004-06-01 Sharp Kk Crystalline semiconductor film and production method thereof, and semiconductor device and production method thereof
KR100477103B1 (ko) * 2001-12-19 2005-03-18 삼성에스디아이 주식회사 금속유도화 측면결정화방법을 이용한 멀티플 게이트 박막트랜지스터 및 그의 제조방법
TW516240B (en) * 2002-02-18 2003-01-01 Ind Tech Res Inst Method of fabricating film transistor on a transparent substrate
US20040093263A1 (en) * 2002-05-29 2004-05-13 Doraisamy Malchiel A. Automated Interview Method
KR100454751B1 (ko) * 2002-10-21 2004-11-03 삼성에스디아이 주식회사 듀얼 또는 멀티플 게이트를 사용하는 티에프티의 제조 방법
US7387922B2 (en) * 2003-01-21 2008-06-17 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation method, method for manufacturing semiconductor device, and laser irradiation system
KR100894594B1 (ko) * 2006-11-24 2009-04-24 삼성모바일디스플레이주식회사 표시장치용 소자기판 및 이의 제조방법
JP5600255B2 (ja) * 2010-01-12 2014-10-01 株式会社ジャパンディスプレイ 表示装置、スイッチング回路および電界効果トランジスタ
US8952429B2 (en) * 2010-09-15 2015-02-10 Institute of Microelectronics, Chinese Academy of Sciences Transistor and method for forming the same
TWI435392B (zh) 2011-02-24 2014-04-21 Univ Nat Chiao Tung 具有電晶體的半導體元件及其製法
WO2013078641A1 (zh) * 2011-11-30 2013-06-06 广东中显科技有限公司 搭桥晶粒多晶硅薄膜晶体管及其制造方法
CN103137484A (zh) * 2011-11-30 2013-06-05 广东中显科技有限公司 搭桥晶粒多晶硅薄膜晶体管的制造方法
WO2013094547A1 (en) * 2011-12-23 2013-06-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
CN102629665B (zh) * 2012-03-30 2015-01-07 京东方科技集团股份有限公司 制作晶体管的方法、晶体管、阵列基板以及显示器
CN114284865B (zh) * 2021-12-24 2023-07-21 中国科学院半导体研究所 有源反馈分布式反馈激光器及其制作方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2553579B1 (fr) * 1983-10-12 1985-12-27 Commissariat Energie Atomique Procede de fabrication d'un transistor en film mince a grille auto-alignee
JP2695488B2 (ja) * 1989-10-09 1997-12-24 キヤノン株式会社 結晶の成長方法
GB2245741A (en) * 1990-06-27 1992-01-08 Philips Electronic Associated Active matrix liquid crystal devices
JPH05289103A (ja) * 1992-04-08 1993-11-05 Toshiba Corp 液晶表示装置
EP0589478B1 (de) * 1992-09-25 1999-11-17 Sony Corporation Flüssigkristall-Anzeigevorrichtung
JPH06140323A (ja) * 1992-10-23 1994-05-20 Casio Comput Co Ltd 半導体薄膜の結晶化方法
JPH06140324A (ja) * 1992-10-23 1994-05-20 Casio Comput Co Ltd 半導体薄膜の結晶化方法
JPH06140321A (ja) * 1992-10-23 1994-05-20 Casio Comput Co Ltd 半導体薄膜の結晶化方法
JP3150840B2 (ja) * 1994-03-11 2001-03-26 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3621151B2 (ja) * 1994-06-02 2005-02-16 株式会社半導体エネルギー研究所 半導体装置の作製方法

Also Published As

Publication number Publication date
EP0797246A1 (de) 1997-09-24
DE69700481D1 (de) 1999-10-14
KR100472157B1 (ko) 2005-07-01
JPH1032339A (ja) 1998-02-03
GB9606083D0 (en) 1996-05-22
JP4201856B2 (ja) 2008-12-24
KR970067914A (ko) 1997-10-13
EP0797246B1 (de) 1999-09-08
US5930609A (en) 1999-07-27

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8327 Change in the person/name/address of the patent owner

Owner name: TPO HONG KONG HOLDING LTD., HONGKONG, HK

8328 Change in the person/name/address of the agent

Representative=s name: PATENTANWAELTE MOELL UND BITTERICH, 76829 LANDAU