DE69637167D1 - LED-Anordnung mit hoher Auflösung und ihr Herstellungsverfahren - Google Patents

LED-Anordnung mit hoher Auflösung und ihr Herstellungsverfahren

Info

Publication number
DE69637167D1
DE69637167D1 DE69637167T DE69637167T DE69637167D1 DE 69637167 D1 DE69637167 D1 DE 69637167D1 DE 69637167 T DE69637167 T DE 69637167T DE 69637167 T DE69637167 T DE 69637167T DE 69637167 D1 DE69637167 D1 DE 69637167D1
Authority
DE
Germany
Prior art keywords
manufacturing process
high resolution
led array
led
array
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69637167T
Other languages
English (en)
Other versions
DE69637167T2 (de
Inventor
Mitsuhiko Ogihara
Yukio Nakamura
Takatoku Shimizu
Masumi Taninaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Data Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP32415995A external-priority patent/JPH09162439A/ja
Priority claimed from JP8693996A external-priority patent/JP3256128B2/ja
Application filed by Oki Data Corp filed Critical Oki Data Corp
Publication of DE69637167D1 publication Critical patent/DE69637167D1/de
Application granted granted Critical
Publication of DE69637167T2 publication Critical patent/DE69637167T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/1446—Devices controlled by radiation in a repetitive configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H01L31/125—Composite devices with photosensitive elements and electroluminescent elements within one single body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H01L33/0008—Devices characterised by their operation having p-n or hi-lo junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Composite Materials (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Led Devices (AREA)
  • Printers Or Recording Devices Using Electromagnetic And Radiation Means (AREA)
DE69637167T 1995-12-13 1996-12-12 LED-Anordnung mit hoher Auflösung und ihr Herstellungsverfahren Expired - Lifetime DE69637167T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP32415995 1995-12-13
JP32415995A JPH09162439A (ja) 1995-12-13 1995-12-13 Ｌｅｄアレイ及びその製造方法
JP8693996A JP3256128B2 (ja) 1996-04-09 1996-04-09 受発光ダイオードアレイチップおよび該チップを用いた受発光ダイオードアレイ、該チップの製造方法
JP8693996 1996-04-09

Publications (2)

Publication Number Publication Date
DE69637167D1 true DE69637167D1 (de) 2007-08-30
DE69637167T2 DE69637167T2 (de) 2008-03-20

Family

ID=26428010

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69637167T Expired - Lifetime DE69637167T2 (de) 1995-12-13 1996-12-12 LED-Anordnung mit hoher Auflösung und ihr Herstellungsverfahren

Country Status (3)

Country Link
US (2) US5821567A (de)
EP (1) EP0779661B1 (de)
DE (1) DE69637167T2 (de)

Families Citing this family (25)

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GB2318448B (en) * 1996-10-18 2002-01-16 Simage Oy Imaging detector and method of production
JPH111027A (ja) * 1997-04-14 1999-01-06 Oki Electric Ind Co Ltd Ｌｅｄアレイおよびプリントヘッドならびに電子写真プリンタ
JPH11186594A (ja) * 1997-12-25 1999-07-09 Hitachi Cable Ltd 発光ダイオードアレイ
JPH11220161A (ja) * 1998-01-30 1999-08-10 Oki Electric Ind Co Ltd 発光ダイオード及び発光ダイオードの製造方法
US6198118B1 (en) * 1998-03-09 2001-03-06 Integration Associates, Inc. Distributed photodiode structure
US6548878B1 (en) 1998-02-05 2003-04-15 Integration Associates, Inc. Method for producing a thin distributed photodiode structure
US6753586B1 (en) 1998-03-09 2004-06-22 Integration Associates Inc. Distributed photodiode structure having majority dopant gradient and method for making same
JP3181262B2 (ja) * 1998-06-04 2001-07-03 スタンレー電気株式会社 平面実装型ｌｅｄ素子およびその製造方法
JP4165785B2 (ja) * 1999-05-11 2008-10-15 横河電機株式会社 フォトダイオードアレイ
JP4221818B2 (ja) * 1999-05-28 2009-02-12 沖電気工業株式会社 光半導体素子の製造方法
US6677707B1 (en) * 1999-11-19 2004-01-13 The Regents Of The University Of California Side-emitting surface mounted light emitting diode
WO2004006293A2 (en) * 2001-08-15 2004-01-15 Microcoating Technologies, Inc. Method of annealing electrically conductive zinc oxide films
US6825866B2 (en) 2002-01-10 2004-11-30 Xerox Corporation LED array architecture for high resolution printbars
JP2003282939A (ja) * 2002-03-26 2003-10-03 Oki Degital Imaging:Kk 半導体発光装置及びその製造方法
JP2004087979A (ja) * 2002-08-28 2004-03-18 Sharp Corp 受光素子およびその製造方法並びに回路内蔵型受光素子
US7053416B2 (en) * 2003-05-30 2006-05-30 Nichia Corporation LED display apparatus
CN100444715C (zh) * 2006-02-09 2008-12-17 友达光电股份有限公司 用于显示元件的全彩工艺的屏蔽
JP5737066B2 (ja) * 2010-08-26 2015-06-17 日亜化学工業株式会社 半導体発光素子
TWI487145B (zh) * 2010-09-17 2015-06-01 Everlight Electronics Co Ltd 用於一微型投影系統之發光二極體裝置
US8435797B2 (en) 2010-12-07 2013-05-07 The United States Of America As Represented By The Secretary Of The Army Electroluminescent diode sensor
TWI488332B (zh) * 2012-10-31 2015-06-11 Nisho Image Tech Inc 發光二極體陣列結構及其列印頭與列印裝置
US10451376B2 (en) 2014-12-16 2019-10-22 Kurt S. SCHULZ Firearm simulators
US10895435B2 (en) 2017-02-27 2021-01-19 Kurt S. SCHULZ Firearm simulator targets and firearm simulation systems
CN109378281A (zh) * 2018-11-21 2019-02-22 中国科学院上海技术物理研究所 一种用于小间距扩散成结表征的测试结构和测试方法
US11600544B2 (en) * 2019-02-27 2023-03-07 Intel Corporation Chip package with staggered pin pattern

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US3942243A (en) * 1974-01-25 1976-03-09 Litronix, Inc. Ohmic contact for semiconductor devices
US4149307A (en) * 1977-12-28 1979-04-17 Hughes Aircraft Company Process for fabricating insulated-gate field-effect transistors with self-aligned contacts
JPS5630776A (en) * 1979-08-21 1981-03-27 Oki Electric Ind Co Ltd Manufacture of light emitting element array
JPS5866370A (ja) * 1981-10-16 1983-04-20 Oki Electric Ind Co Ltd 発光ダイオ−ドアレイ
JPS5999717A (ja) * 1982-11-29 1984-06-08 Fujitsu Ltd 半導体装置の製造方法
JPS59146875A (ja) * 1983-02-10 1984-08-22 Matsushita Graphic Commun Syst Inc Ｌｅｄアレイヘツド
US4644342A (en) * 1984-03-29 1987-02-17 Eastman Kodak Company Array of light emitting diodes for producing gray scale light images
JPS60235479A (ja) * 1984-05-09 1985-11-22 Nec Corp 発光素子アレイ
US4634474A (en) * 1984-10-09 1987-01-06 At&T Bell Laboratories Coating of III-V and II-VI compound semiconductors
JP2533078B2 (ja) * 1984-11-27 1996-09-11 ソニー株式会社 不純物拡散方法
JPH0727873B2 (ja) * 1987-11-04 1995-03-29 三菱電機株式会社 化合物半導体へのＳｉ拡散方法
JPH0327577A (ja) * 1989-06-23 1991-02-05 イーストマン・コダックジャパン株式会社 発光ダイオ―ドアレイ
JPH0582463A (ja) * 1991-03-25 1993-04-02 Mitsubishi Electric Corp Ｐ形不純物の拡散方法及び半導体レーザ
JPH0613649A (ja) * 1992-06-26 1994-01-21 Eastman Kodak Japan Kk 発光素子
JPH0685320A (ja) * 1992-09-02 1994-03-25 Nisshin Steel Co Ltd 発光ダイオードアレイチップの製造方法
JPH0685319A (ja) * 1992-09-02 1994-03-25 Nisshin Steel Co Ltd 発光ダイオードアレイチップの製造方法
JP3187213B2 (ja) * 1993-08-25 2001-07-11 沖電気工業株式会社 受発光ダイオード
US5600157A (en) * 1993-04-28 1997-02-04 Oki Electric Industry Co., Ltd. Light-emitting and light-sensing diode array device, and light-emitting and light-sensing diode with improved sensitivity
JP2857305B2 (ja) * 1993-10-20 1999-02-17 沖電気工業株式会社 Ｌｅｄアレイおよびその製造方法
US5523590A (en) * 1993-10-20 1996-06-04 Oki Electric Industry Co., Ltd. LED array with insulating films
JP3157690B2 (ja) * 1995-01-19 2001-04-16 沖電気工業株式会社 ｐｎ接合素子の製造方法
JP3563141B2 (ja) * 1995-01-31 2004-09-08 沖電気工業株式会社 Ｚｎの固相拡散方法およびＬＥＤの製造方法
JP3053750B2 (ja) * 1995-07-21 2000-06-19 沖電気工業株式会社 端面発光型ｌｅｄの製造方法
JP3258221B2 (ja) * 1995-12-26 2002-02-18 沖電気工業株式会社 位置合わせ用の認識マークおよびその形成方法、認識マークおよび発光部の形成の兼用マスク、位置合わせ用の認識マークを用いた位置合わせ方法

Also Published As

Publication number Publication date
EP0779661B1 (de) 2007-07-18
EP0779661A2 (de) 1997-06-18
US5821567A (en) 1998-10-13
US6136627A (en) 2000-10-24
EP0779661A3 (de) 1999-06-02
DE69637167T2 (de) 2008-03-20

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