DE69631562D1 - GaN-System-Halbleiterlaservorrichtung - Google Patents
GaN-System-HalbleiterlaservorrichtungInfo
- Publication number
- DE69631562D1 DE69631562D1 DE69631562T DE69631562T DE69631562D1 DE 69631562 D1 DE69631562 D1 DE 69631562D1 DE 69631562 T DE69631562 T DE 69631562T DE 69631562 T DE69631562 T DE 69631562T DE 69631562 D1 DE69631562 D1 DE 69631562D1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor laser
- laser device
- system semiconductor
- gan system
- gan
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
- H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
- H01S5/0213—Sapphire, quartz or diamond based substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
- H01S5/2272—Buried mesa structure ; Striped active layer grown by a mask induced selective growth
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12187895 | 1995-05-19 | ||
JP12187895A JPH08316582A (ja) | 1995-05-19 | 1995-05-19 | 半導体レーザ |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69631562D1 true DE69631562D1 (de) | 2004-03-25 |
DE69631562T2 DE69631562T2 (de) | 2004-12-16 |
Family
ID=14822166
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69631562T Expired - Lifetime DE69631562T2 (de) | 1995-05-19 | 1996-05-20 | GaN-System-Halbleiterlaservorrichtung |
Country Status (4)
Country | Link |
---|---|
US (1) | US5742628A (de) |
EP (1) | EP0743727B1 (de) |
JP (1) | JPH08316582A (de) |
DE (1) | DE69631562T2 (de) |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6258617B1 (en) * | 1995-08-31 | 2001-07-10 | Kabushiki Kaisha Toshiba | Method of manufacturing blue light emitting element |
US6103604A (en) * | 1997-02-10 | 2000-08-15 | Trw Inc. | High electron mobility transparent conductor |
JPH10335750A (ja) * | 1997-06-03 | 1998-12-18 | Sony Corp | 半導体基板および半導体装置 |
TW393785B (en) * | 1997-09-19 | 2000-06-11 | Siemens Ag | Method to produce many semiconductor-bodies |
DE19838810B4 (de) * | 1998-08-26 | 2006-02-09 | Osram Opto Semiconductors Gmbh | Verfahren zum Herstellen einer Mehrzahl von Ga(In,Al)N-Leuchtdiodenchips |
JP3955367B2 (ja) | 1997-09-30 | 2007-08-08 | フィリップス ルミレッズ ライティング カンパニー リミテッド ライアビリティ カンパニー | 光半導体素子およびその製造方法 |
US6849472B2 (en) * | 1997-09-30 | 2005-02-01 | Lumileds Lighting U.S., Llc | Nitride semiconductor device with reduced polarization fields |
JP3180743B2 (ja) * | 1997-11-17 | 2001-06-25 | 日本電気株式会社 | 窒化化合物半導体発光素子およびその製法 |
JPH11340576A (ja) * | 1998-05-28 | 1999-12-10 | Sumitomo Electric Ind Ltd | 窒化ガリウム系半導体デバイス |
TW418549B (en) | 1998-06-26 | 2001-01-11 | Sharp Kk | Crystal growth method for nitride semiconductor, nitride semiconductor light emitting device, and method for producing the same |
JP3262080B2 (ja) * | 1998-09-25 | 2002-03-04 | 株式会社村田製作所 | 半導体発光素子 |
US6744800B1 (en) * | 1998-12-30 | 2004-06-01 | Xerox Corporation | Method and structure for nitride based laser diode arrays on an insulating substrate |
JP2001053339A (ja) * | 1999-08-11 | 2001-02-23 | Toshiba Corp | 半導体発光素子およびその製造方法 |
US6265322B1 (en) * | 1999-09-21 | 2001-07-24 | Agere Systems Guardian Corp. | Selective growth process for group III-nitride-based semiconductors |
JP3723434B2 (ja) * | 1999-09-24 | 2005-12-07 | 三洋電機株式会社 | 半導体発光素子 |
JP3929008B2 (ja) * | 2000-01-14 | 2007-06-13 | シャープ株式会社 | 窒化物系化合物半導体発光素子およびその製造方法 |
DE10025562C1 (de) * | 2000-05-24 | 2002-04-25 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung einer Nitrid-Schicht auf einem Substrat und mit dem Verfahren hergestelltes Quasisubstrat |
JP3761418B2 (ja) * | 2001-05-10 | 2006-03-29 | Hoya株式会社 | 化合物結晶およびその製造法 |
GB2378039B (en) * | 2001-07-27 | 2003-09-17 | Juses Chao | AlInGaN LED Device |
US7339255B2 (en) | 2004-08-24 | 2008-03-04 | Kabushiki Kaisha Toshiba | Semiconductor device having bidirectionally inclined toward <1-100> and <11-20> relative to {0001} crystal planes |
JP4451371B2 (ja) * | 2004-12-20 | 2010-04-14 | シャープ株式会社 | 窒化物半導体レーザ素子 |
US20070069225A1 (en) * | 2005-09-27 | 2007-03-29 | Lumileds Lighting U.S., Llc | III-V light emitting device |
JP2008091962A (ja) * | 2007-12-28 | 2008-04-17 | Rohm Co Ltd | 半導体発光素子 |
JP4638958B1 (ja) * | 2009-08-20 | 2011-02-23 | 株式会社パウデック | 半導体素子の製造方法 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3852402T2 (de) * | 1987-01-31 | 1995-05-04 | Toyoda Gosei Kk | Galliumnitridartige Halbleiterverbindung und daraus bestehende lichtemittierende Vorrichtung sowie Verfahren zu deren Herstellung. |
JP3160914B2 (ja) * | 1990-12-26 | 2001-04-25 | 豊田合成株式会社 | 窒化ガリウム系化合物半導体レーザダイオード |
US5578839A (en) * | 1992-11-20 | 1996-11-26 | Nichia Chemical Industries, Ltd. | Light-emitting gallium nitride-based compound semiconductor device |
US6083812A (en) * | 1993-02-02 | 2000-07-04 | Texas Instruments Incorporated | Heteroepitaxy by large surface steps |
US5432808A (en) * | 1993-03-15 | 1995-07-11 | Kabushiki Kaisha Toshiba | Compound semicondutor light-emitting device |
JP2748354B2 (ja) * | 1993-10-21 | 1998-05-06 | 日亜化学工業株式会社 | 窒化ガリウム系化合物半導体チップの製造方法 |
JPH07249831A (ja) * | 1994-03-10 | 1995-09-26 | Hitachi Ltd | 結晶成長方法 |
US5604763A (en) * | 1994-04-20 | 1997-02-18 | Toyoda Gosei Co., Ltd. | Group III nitride compound semiconductor laser diode and method for producing same |
JPH0818159A (ja) * | 1994-04-25 | 1996-01-19 | Hitachi Ltd | 半導体レーザ素子及びその作製方法 |
JP2953326B2 (ja) * | 1994-11-30 | 1999-09-27 | 日亜化学工業株式会社 | 窒化ガリウム系化合物半導体レーザ素子の製造方法 |
JP3523700B2 (ja) * | 1995-01-12 | 2004-04-26 | 日亜化学工業株式会社 | 窒化物半導体レーザ素子 |
JPH08195530A (ja) * | 1995-01-18 | 1996-07-30 | Hitachi Ltd | 半導体レーザ装置 |
US5585648A (en) * | 1995-02-03 | 1996-12-17 | Tischler; Michael A. | High brightness electroluminescent device, emitting in the green to ultraviolet spectrum, and method of making the same |
-
1995
- 1995-05-19 JP JP12187895A patent/JPH08316582A/ja active Pending
-
1996
- 1996-05-20 US US08/650,439 patent/US5742628A/en not_active Expired - Lifetime
- 1996-05-20 DE DE69631562T patent/DE69631562T2/de not_active Expired - Lifetime
- 1996-05-20 EP EP96108019A patent/EP0743727B1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPH08316582A (ja) | 1996-11-29 |
DE69631562T2 (de) | 2004-12-16 |
EP0743727A1 (de) | 1996-11-20 |
EP0743727B1 (de) | 2004-02-18 |
US5742628A (en) | 1998-04-21 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: NEC ELECTRONICS CORP., KAWASAKI, KANAGAWA, JP |
|
R082 | Change of representative |
Ref document number: 743727 Country of ref document: EP Representative=s name: SPLANEMANN BARONETZKY KNITTER PATENTANWAELTE R, DE |
|
R081 | Change of applicant/patentee |
Ref document number: 743727 Country of ref document: EP Owner name: RENESAS ELECTRONICS CORPORATION, JP Free format text: FORMER OWNER: NEC ELECTRONICS CORP., KAWASAKI, JP Effective date: 20120828 |
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R082 | Change of representative |
Ref document number: 743727 Country of ref document: EP Representative=s name: SPLANEMANN BARONETZKY KNITTER PATENTANWAELTE R, DE Effective date: 20120828 |