DE69623361D1 - Verfahren zur Herstellung einer Vorrichtung mittels Projektionslithographie und Gerät dafür - Google Patents

Verfahren zur Herstellung einer Vorrichtung mittels Projektionslithographie und Gerät dafür

Info

Publication number
DE69623361D1
DE69623361D1 DE69623361T DE69623361T DE69623361D1 DE 69623361 D1 DE69623361 D1 DE 69623361D1 DE 69623361 T DE69623361 T DE 69623361T DE 69623361 T DE69623361 T DE 69623361T DE 69623361 D1 DE69623361 D1 DE 69623361D1
Authority
DE
Germany
Prior art keywords
producing
projection lithography
therefor
device therefor
lithography
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69623361T
Other languages
English (en)
Other versions
DE69623361T2 (de
Inventor
Steven D Berger
George P Watson
James A Liddle
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
AT&T Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AT&T Corp filed Critical AT&T Corp
Application granted granted Critical
Publication of DE69623361D1 publication Critical patent/DE69623361D1/de
Publication of DE69623361T2 publication Critical patent/DE69623361T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70308—Optical correction elements, filters or phase plates for manipulating imaging light, e.g. intensity, wavelength, polarisation, phase or image shift
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
    • G03F7/70441—Optical proximity correction [OPC]
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70941—Stray fields and charges, e.g. stray light, scattered light, flare, transmission loss
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31769—Proximity effect correction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31777—Lithography by projection
    • H01J2237/31791—Scattering mask

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Health & Medical Sciences (AREA)
  • Public Health (AREA)
  • Epidemiology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Atmospheric Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Analytical Chemistry (AREA)
  • Environmental & Geological Engineering (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
DE69623361T 1995-01-27 1996-01-16 Verfahren zur Herstellung einer Vorrichtung mittels Projektionslithographie und Gerät dafür Expired - Lifetime DE69623361T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/379,052 US5561008A (en) 1995-01-27 1995-01-27 Process for device fabrication using projection lithography and an apparatus therefor

Publications (2)

Publication Number Publication Date
DE69623361D1 true DE69623361D1 (de) 2002-10-10
DE69623361T2 DE69623361T2 (de) 2003-04-30

Family

ID=23495621

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69623361T Expired - Lifetime DE69623361T2 (de) 1995-01-27 1996-01-16 Verfahren zur Herstellung einer Vorrichtung mittels Projektionslithographie und Gerät dafür

Country Status (7)

Country Link
US (2) US5561008A (de)
EP (1) EP0725423B1 (de)
JP (1) JP3267499B2 (de)
KR (1) KR100465254B1 (de)
DE (1) DE69623361T2 (de)
SG (1) SG50410A1 (de)
TW (1) TW333621B (de)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08297692A (ja) * 1994-09-16 1996-11-12 Mitsubishi Electric Corp 光近接補正装置及び方法並びにパタン形成方法
US6404499B1 (en) 1998-04-21 2002-06-11 Asml Netherlands B.V. Lithography apparatus with filters for optimizing uniformity of an image
US6051346A (en) * 1998-04-29 2000-04-18 Lucent Technologies Inc. Process for fabricating a lithographic mask
RU2129294C1 (ru) * 1998-05-22 1999-04-20 Гурович Борис Аронович Способ получения рисунка
JP2000331633A (ja) * 1999-05-18 2000-11-30 Nikon Corp 荷電粒子線露光装置及び半導体デバイスの製造方法
JP3348779B2 (ja) 1999-06-23 2002-11-20 日本電気株式会社 パターン露光マスク、パターン露光方法及び装置、回路製造方法及びシステム、マスク製造方法
US6324933B1 (en) 1999-10-06 2001-12-04 Agere Systems Guardian Corp. Planar movable stage mechanism
NL1015155C2 (nl) * 2000-05-11 2001-11-13 Tno Elektronenstraallithografie.
US7012266B2 (en) 2002-08-23 2006-03-14 Samsung Electronics Co., Ltd. MEMS-based two-dimensional e-beam nano lithography device and method for making the same
WO2005004196A2 (en) * 2002-08-23 2005-01-13 Sungho Jin Article comprising gated field emission structures with centralized nanowires and method for making the same
US6858521B2 (en) * 2002-12-31 2005-02-22 Samsung Electronics Co., Ltd. Method for fabricating spaced-apart nanostructures
US6987027B2 (en) 2002-08-23 2006-01-17 The Regents Of The University Of California Microscale vacuum tube device and method for making same
US6995911B2 (en) * 2003-06-26 2006-02-07 Micron Technology, Inc. Micro-lenses and structures for increasing area coverage and controlling shape of micro-lenses
US20060057388A1 (en) * 2004-09-10 2006-03-16 Sungho Jin Aligned and open-ended nanotube structure and method for making the same
US20080020499A1 (en) * 2004-09-10 2008-01-24 Dong-Wook Kim Nanotube assembly including protective layer and method for making the same
US7868850B2 (en) * 2004-10-06 2011-01-11 Samsung Electronics Co., Ltd. Field emitter array with split gates and method for operating the same
JP5299937B2 (ja) * 2006-05-18 2013-09-25 カール・ツァイス・エスエムティー・ゲーエムベーハー 光近接効果を補正する方法
US7897008B2 (en) * 2006-10-27 2011-03-01 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus and method for regional plasma control
US8387674B2 (en) 2007-11-30 2013-03-05 Taiwan Semiconductor Manufacturing Comany, Ltd. Chip on wafer bonder
US8178280B2 (en) * 2010-02-05 2012-05-15 Taiwan Semiconductor Manufacturing Company, Ltd. Self-contained proximity effect correction inspiration for advanced lithography (special)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4463265A (en) * 1982-06-17 1984-07-31 Hewlett-Packard Company Electron beam proximity effect correction by reverse field pattern exposure
US5258246A (en) * 1989-08-07 1993-11-02 At&T Bell Laboratories Device manufacture involving lithographic processing
US5079112A (en) * 1989-08-07 1992-01-07 At&T Bell Laboratories Device manufacture involving lithographic processing
US5130213A (en) * 1989-08-07 1992-07-14 At&T Bell Laboratories Device manufacture involving lithographic processing
US5532496A (en) * 1994-12-14 1996-07-02 International Business Machines Corporation Proximity effect compensation in scattering-mask lithographic projection systems and apparatus therefore

Also Published As

Publication number Publication date
KR960029909A (ko) 1996-08-17
US5561008A (en) 1996-10-01
KR100465254B1 (ko) 2006-01-27
DE69623361T2 (de) 2003-04-30
JPH08250414A (ja) 1996-09-27
TW333621B (en) 1998-06-11
EP0725423A2 (de) 1996-08-07
US5701014A (en) 1997-12-23
EP0725423B1 (de) 2002-09-04
EP0725423A3 (de) 1998-05-06
SG50410A1 (en) 1998-07-20
JP3267499B2 (ja) 2002-03-18

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